JPS53132482A - High gain sputtering evaporation apparatus consuming material to be evaporated uniformly - Google Patents

High gain sputtering evaporation apparatus consuming material to be evaporated uniformly

Info

Publication number
JPS53132482A
JPS53132482A JP4732377A JP4732377A JPS53132482A JP S53132482 A JPS53132482 A JP S53132482A JP 4732377 A JP4732377 A JP 4732377A JP 4732377 A JP4732377 A JP 4732377A JP S53132482 A JPS53132482 A JP S53132482A
Authority
JP
Japan
Prior art keywords
evaporation apparatus
high gain
sputtering evaporation
consuming material
apparatus consuming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4732377A
Other languages
Japanese (ja)
Other versions
JPS564148B2 (en
Inventor
Chikara Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to JP4732377A priority Critical patent/JPS53132482A/en
Publication of JPS53132482A publication Critical patent/JPS53132482A/en
Publication of JPS564148B2 publication Critical patent/JPS564148B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/35Sputtering by application of a magnetic field, e.g. magnetron sputtering

Abstract

PURPOSE:To provide an evaporation apparatus described in the title which makes possible uniform consumption of expensive target, by arranging polyphase magnetic poles closely to the back of the evaporation surface of a target, and by installing a net-like anode at the evaporation surface with a prescribed distance.
JP4732377A 1977-04-26 1977-04-26 High gain sputtering evaporation apparatus consuming material to be evaporated uniformly Granted JPS53132482A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4732377A JPS53132482A (en) 1977-04-26 1977-04-26 High gain sputtering evaporation apparatus consuming material to be evaporated uniformly

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4732377A JPS53132482A (en) 1977-04-26 1977-04-26 High gain sputtering evaporation apparatus consuming material to be evaporated uniformly

Publications (2)

Publication Number Publication Date
JPS53132482A true JPS53132482A (en) 1978-11-18
JPS564148B2 JPS564148B2 (en) 1981-01-28

Family

ID=12772048

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4732377A Granted JPS53132482A (en) 1977-04-26 1977-04-26 High gain sputtering evaporation apparatus consuming material to be evaporated uniformly

Country Status (1)

Country Link
JP (1) JPS53132482A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4600492A (en) * 1984-07-25 1986-07-15 Kabushiki Kaisha Tokuda Seisakusho Magnet driving method and device for same
US5262030A (en) * 1992-01-15 1993-11-16 Alum Rock Technology Magnetron sputtering cathode with electrically variable source size and location for coating multiple substrates

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5186083A (en) * 1974-12-16 1976-07-28 Airco Inc
JPS51137681A (en) * 1975-05-23 1976-11-27 Tokuda Seisakusho Ltd Sputtering apparatus
JPS537586A (en) * 1976-02-19 1978-01-24 Sloan Technology Corp Cathodic spattering apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5186083A (en) * 1974-12-16 1976-07-28 Airco Inc
JPS51137681A (en) * 1975-05-23 1976-11-27 Tokuda Seisakusho Ltd Sputtering apparatus
JPS537586A (en) * 1976-02-19 1978-01-24 Sloan Technology Corp Cathodic spattering apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4600492A (en) * 1984-07-25 1986-07-15 Kabushiki Kaisha Tokuda Seisakusho Magnet driving method and device for same
US5262030A (en) * 1992-01-15 1993-11-16 Alum Rock Technology Magnetron sputtering cathode with electrically variable source size and location for coating multiple substrates

Also Published As

Publication number Publication date
JPS564148B2 (en) 1981-01-28

Similar Documents

Publication Publication Date Title
JPS5295581A (en) Sputiering apparatus
JPS51136108A (en) Magnetic pole construction
JPS53132482A (en) High gain sputtering evaporation apparatus consuming material to be evaporated uniformly
EP0381437A3 (en) Magnetron sputtering apparatus
JPS53102677A (en) Ion beam radiating unit
JPS53119671A (en) Ion implanting method
JPS57158381A (en) Magnetron sputtering device
JPS5531142A (en) Pressed magnetic field type magnetron sputter by focusing magnetic field
JPS5558371A (en) Sputtering apparatus
JPS52137969A (en) Magnetron
JPS5357758A (en) High frequency sputtering device
JPS5315746A (en) Cathode structure of electronic gun
JPS5337588A (en) Sputtering electrode
JPS5292473A (en) Main lens electric field forming method of inline type 3 beam electron gun
JPS5558370A (en) Electrode for sputtering target
JPS549176A (en) Sputtering method for forming unform film and evaporation film
JPS52115161A (en) Electron gun for electron beam exposing device
JPS53105699A (en) Cold cathod discharging type ion source device
JPS5418679A (en) Electron impact type ion source device
JPS5379776A (en) Sputtering apparatus
JPS5411659A (en) Manufacture for magnetron
JPS544567A (en) Growing apparatus of ion beam crystal
JPS5316572A (en) Magnetron
JPS5335363A (en) Field radiation type cathode
JPS5316573A (en) Magnetron