JPS5337588A - Sputtering electrode - Google Patents

Sputtering electrode

Info

Publication number
JPS5337588A
JPS5337588A JP11350676A JP11350676A JPS5337588A JP S5337588 A JPS5337588 A JP S5337588A JP 11350676 A JP11350676 A JP 11350676A JP 11350676 A JP11350676 A JP 11350676A JP S5337588 A JPS5337588 A JP S5337588A
Authority
JP
Japan
Prior art keywords
sputtering electrode
sputtering
pole
efficiency
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11350676A
Other languages
Japanese (ja)
Inventor
Shigeo Kotani
Takashi Sato
Masaharu Aoyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11350676A priority Critical patent/JPS5337588A/en
Publication of JPS5337588A publication Critical patent/JPS5337588A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering

Abstract

PURPOSE:To improve the sputtering efficiency, cooling efficiency, etc., by projecting the parts between the N pole and the S pole of the opposing magnet thicker than the other part, at the cathode (target) of the sputtering electrode to be used for the formation of thin metal film.
JP11350676A 1976-09-21 1976-09-21 Sputtering electrode Pending JPS5337588A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11350676A JPS5337588A (en) 1976-09-21 1976-09-21 Sputtering electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11350676A JPS5337588A (en) 1976-09-21 1976-09-21 Sputtering electrode

Publications (1)

Publication Number Publication Date
JPS5337588A true JPS5337588A (en) 1978-04-06

Family

ID=14614043

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11350676A Pending JPS5337588A (en) 1976-09-21 1976-09-21 Sputtering electrode

Country Status (1)

Country Link
JP (1) JPS5337588A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53138648U (en) * 1977-04-07 1978-11-02
JPS5567166U (en) * 1978-10-30 1980-05-09
JPS59200763A (en) * 1983-04-30 1984-11-14 Fujitsu Ltd Sputtering device
CN101851746A (en) * 2009-04-03 2010-10-06 鸿富锦精密工业（深圳）有限公司 Magnetic control sputtering target and magnetic control sputtering system

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53138648U (en) * 1977-04-07 1978-11-02
JPS5567166U (en) * 1978-10-30 1980-05-09
JPS59200763A (en) * 1983-04-30 1984-11-14 Fujitsu Ltd Sputtering device
JPS6357502B2 (en) * 1983-04-30 1988-11-11 Fujitsu Ltd
CN101851746A (en) * 2009-04-03 2010-10-06 鸿富锦精密工业（深圳）有限公司 Magnetic control sputtering target and magnetic control sputtering system

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