JPS59200763A - Sputtering device - Google Patents

Abstract

PURPOSE:To provide a titled device having high sputtering efficiency and the utilizing efficiency of a target by disposing plate- or bar-shaped magnets of which the end parts formed with N and S poles are curved respectively diagonally upward toward the outside with respect to the S-N axis beneath the target. CONSTITUTION:A target electrode 16 constituting a sputtering gun 13 in a sputtering devce of a planar magnetron type is constituted, for example, in the following way: Plate- or bar-shaped magnets 3 of which the respective ends formed with an N or S pole are curved upward by, for example, about 45 deg., with respect to the S-N axis are disposed in the cavity formed of a backing plate 2 and a bottom plate 1 consisting of copper, etc. A target 5 consisting of a metal such as Al, Mo or the like or the silicide, etc. thereof is disposed above the plate 2. The magnetic flux phi obtd. by such constitution is formed mainly in the upper part of the target 5 and therefore almost all the magnetic force possessed by the magnets 3 is concentrated onto the target 5, by which the plasma generating efficiency is improved and the growing rate by sputtering is consequently improved.

Description

DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The invention relates to a planar order gnetron type sputtering apparatus, and particularly to the structure of a magnet disposed in a sputtering gun used in the sputtering apparatus.

(b) Prior Art and Problems Conventional planar magnetron sputtering equipment has a sputtering gun in which the magnets are arranged either at right angles or parallel to the target surface, that is, the upper surface of the backing plate. Ta. Figure 1 (a) schematically shows a structure in which the magnets are arranged perpendicular to the top surface of the backing grating, and Figure 1 (b) schematically shows a structure in which the magnets are arranged in parallel. In the diagram, 1 is the bottom plate, 2 is the backing grate, 3 is the magnet, 417:
yoke, 5 is the target after use, 6 is a dotted line showing the shape before use, 7 and 7' are consumption areas of the target, and Φ is the magnetic flux.

In the former conventional structure, that is, the structure in which the magnet 3 is disposed perpendicular to the upper surface of the backing plate 2,
As shown in the figure (a), since the magnetic flux Φ exits perpendicularly from the north pole face and enters perpendicularly to the south pole face, the area where the plasma is confined becomes narrower, and the target consumption area 7 of the target 5 becomes smaller. Therefore, in this structure, there was a problem that the usage efficiency of the cuget was poor.In addition, in the latter structure, that is, in the structure where the magnet 3 is arranged parallel to the upper surface of the backing plate 2, , the same figure (as shown in Ron), as the magnetic flux Φ spreads outward, the area where the plasma is confined expands, and the target quenching fiber region 7' becomes wider, improving the efficiency of target use. Since the magnetic flux Φ is directed in two directions, one above and one below the magnet, there is a problem in that the sputtering efficiency decreases.

(e) Object of the Invention An object of the present invention is to solve the above-mentioned problems and provide a planar magnetron type sputtering gun that improves sputtering efficiency and target usage efficiency.

(The structure of the invention, that is, the present invention is a planar magnetron type sputtering apparatus, which has an N pole on one end face and an S pole on the other end face, and each end where the N pole or the S pole is formed. The present invention is characterized in that a plate-shaped or bar-shaped magnet is disposed below the target, and is bent diagonally upward to the outside of each pole along the SN axis of the magnet.

(e) Embodiments of the Invention The present invention will be described below with reference to the drawings.

The second section is a schematic sectional view of an example of a planar magnetron type sputtering apparatus, and FIG. 3 is a schematic fffr cross-sectional view of the main part of an embodiment of a sputtering gun having an uninvented structure. FIG. 1 is a schematic plan view of the main part of an embodiment of the pond in the granite sputtering process (A) and a schematic plan view of the main part of the pond is shown in FIG.

Planar magnetron type sputtering equipment 11
A planar magnetron type sputtering gun 13 is disposed in the lower part of the processing chamber 12 formed by the sputtering gun 13. For example, a disc-shaped magnet 3 disposed in parallel to the grating 2, a target electrode 16 mainly consisting of a target 5 mounted on the backing plate 2, and a target jig 16.
It is mainly composed of a shield cable (g 17) that surrounds the fil1 side of the fil1 side (f).
8c and 18d are airtight insulators, and 19 is a cooling water port.

During the sputtering process, argon (Ar) flows in through the gas inlet 10 at 1°C.
The area is evacuated from the air exhaust port 8, and the inside of the processing chamber 12 is
For example, a voltage of about -4oocv]<p-ge, y-ate) is applied between the shield IL pole 17 and the target electrode 16 with the pressure f maintained at about 10-3 to 1 O-2 (Torr). by applying Ar, generating plasma in Ar, and driving out all the particles of the target material by the plasma,
A sputtered film is then deposited on the substrate 14 to be processed.

In the present invention, the sputtering gun 1 in such a planar magnetron type sputtering apparatus is
The target electrode 16 constituting the target electrode 3 is formed in a structure as shown in FIG. 3, for example.

That is, the ends of each of the N, self, or S poles formed in the cavity formed by the backing plate 2 made of copper (Cu), etc., and the bottom plate 1 are located outside the respective poles along the S-N axis. A magnet 3 (rod-shaped or plate-shaped) bent by about 45 degrees, for example, is arranged diagonally upward, and the backing
Aluminum (At), molybdenum (Mo), and molybdenum silicide (Mo Si
) and other metal-plated targets 5 made of silicide, etc.
is included.

In such a structure, the N and S poles are raised upwards and the magnetic pole faces are aligned diagonally upward, so
Since the magnetic flux Φ is mainly formed on the upper part of the target 5, almost all the magnetic force of the magnet 3 can be concentrated on the target 5, increasing the plasma generation efficiency and reducing the growth rate of vines. In addition, since the end face with the magnetic pole of the magnet is turned outside the edge of the target 5, the magnetic flux Φ is formed broadly over the entire surface of the target 5 as shown in the figure, which improves the confinement of the plasma. Since the area covered by the target 5 is expanded, the target 5 can consume rP on the wide surface 'Jj (7 is the consumption area), and the usage efficiency of the target 5 is improved.0 In the above structure, the backing plate 2 and the bottom
Cooling water normally flows through the cavity formed by the magnet 3 and in which the magnet 3 is housed. Also, the bending angle of the magnet 3 end is 30~
A desired angle is selected within a range of about 60 degrees. Furthermore, the dimensional ratio of the bent portion is also selected in various ways, taking into consideration the overall shape of the sputtering gun.

Fig. 4 shows an example using a disc-shaped magnet, and Fig. 4 (A) is a schematic plan view of the target electrode seen from above, and Fig. 4 (B) is a schematic plan view of the target electrode. It is a schematic sectional view taken along the line A-'A'. In these figures, 1 is the bottom plate, 2 is the backing plate, 3' is the donut disc magnet, 5 is the target, 19 is the bent part, 20 is the N-pole surface, and 21 is the S-pole surface. ing. In this embodiment, a perfectly circular donut shape is used, but in reality, a perfectly circular donut shape is also often used.

(f) As described in the detailed description of the invention, according to the invention, in a planar magnetron type sputtering gun, the magnetic field formed by the magnet built in the sputtering φ gun is applied only to the surface of the sputtering gun. Since the plasma is formed as a king, the efficiency of plasma generation is increased and the speed and speed of sputter growth is improved.

Further, according to the invention, the magnetic field is formed widely covering the entire surface of the target, so the area where plasma is confined is expanded9.
Since sputtering is performed over a wide area, the target usage efficiency is improved.

[Brief explanation of the drawing]

Figures 1 (a) and (b) are schematic sectional views of main parts of a conventional sputtering gun, Figure 21 is a schematic sectional view of a planar magnetron sputtering device, and Figure 3 is a sputtering gun having the structure of the present invention. FIG. 4 is a schematic cross-sectional view of the main part in one embodiment of the gun, and FIG. 4 is a schematic cross-sectional view of the main part (A) and a schematic cross-sectional view (B) of the main part in another embodiment. In the figure, 1 is the bottom, 2 is the backing grade, 3 and 3' are the magnets, 5 is the target, 7 is the consumption area, 19 is the bending part, 20 is the N-pole surface, 21 is the S-pole surface, and Φ is the Indicates magnetic flux. Part I, 2nd day, lV, arithmetic, 3rd sentence, 4th factor

Claims (1)

[Claims] It has an N pole on one end face and an S pole on the other end face, and each end where the N pole or S pole is formed is located diagonally above the outside of each pole along the S-N axis of the magnet. 1. A sputtering apparatus characterized in that a bent plate-shaped or rod-shaped magnet is disposed below a target.