CN103668096A - Bar magnet, magnetic target and magnetron sputtering equipment - Google Patents
Bar magnet, magnetic target and magnetron sputtering equipment Download PDFInfo
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- CN103668096A CN103668096A CN201310739712.0A CN201310739712A CN103668096A CN 103668096 A CN103668096 A CN 103668096A CN 201310739712 A CN201310739712 A CN 201310739712A CN 103668096 A CN103668096 A CN 103668096A
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- bar magnet
- utmost point
- magnetron sputtering
- magnetic target
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Abstract
The invention relates to the technical field of magnetron sputtering, in particular to a bar magnet, a magnetic target and magnetron sputtering equipment. A bump structure is arranged in the middle area of the bar magnet. According to the bar magnet, the magnetic target and the magnetron sputtering equipment, the bar magnet is provided with the bump structure, so that a magnetic field with uniform magnetic induction intensity distribution is provided for a magnetron sputtering area in a process of depositing a thin film in a magnetron sputtering way, and the thickness uniformity of the deposited thin film is ensured.
Description
Technical field
The present invention relates to magnetron sputtering technique field, relate in particular to a kind of bar magnet, magnetic target and magnetron sputtering equipment.
Background technology
In magnetron sputtering process, in order to obtain higher target atom sedimentation rate, need higher build-up of luminance ionization of gas degree, and obtain higher build-up of luminance ionization of gas degree, need to guarantee that electronics and build-up of luminance gas molecule have enough large probability of collision, therefore in magnetron sputtering equipment, adopt and adhere to magnetic target and control trajectory of electron motion, make its movement locus in the shape of a spiral, as shown in Figure 1.
When electronics moves in magnetic field, because movement velocity and the field direction of electronics exists certain angle, electronics is subject to, under the effect of long-range navigation magnetic force, being circumferential motion; Due to the effect of electric field, make electronics in the other direction, have acceleration at electric field line again, therefore, electronics is under the acting in conjunction of magnetic field and electric field, and spiral advances, and has extended movement path, has improved the probability of collision of electronics and build-up of luminance gas molecule simultaneously.
At present, magnetic target mostly adopts fixing bar permanent magnet to provide magnetic field for sputter.A plurality of bar permanent magnets in magnetic target are fixed on retaining plate side by side.Magnetron sputtering equipment, comprise microscope carrier, be arranged on this microscope carrier top target, be positioned at the backboard of target upside and backboard upside bar permanent magnet be set.When depositing being placed on substrate on microscope carrier by this magnetron sputtering equipment, magnetic induction density skewness on substrate in the magnetic field providing due to bar permanent magnet, the magnetic induction density of bar magnet fringe region is better than the magnetic induction density of this magnet region intermediate, causes the uneven film thickness of deposition even.According to Square resistance measurement and deposition film thickness measuring, find, the film of deposition has intermediate thin, and the thicker defect of film of the end position of close bar permanent magnet.
In order to overcome the above problems, the present invention has done useful improvement.
Summary of the invention
(1) technical problem that will solve
The object of this invention is to provide a kind of magnetic induction density distribution more uniform a kind of bar magnet, magnetic target and magnetron sputtering equipment that can make magnetic field, magnetron sputtering region.
(2) technical scheme
The present invention is achieved by the following technical solutions: a kind of bar magnet, described bar magnet is provided with bulge-structure at region intermediate.
Wherein, described bulge-structure is for to be arranged on the bending structure on described bar magnet along this bar magnet length direction.
Preferably, the bending angle scope of described bending structure is 165 °～178 °.
Particularly, described bar magnet comprises:
The peripheral S utmost point and the inner N utmost point;
Or, the peripheral N utmost point and the inner S utmost point.
The present invention also provides a kind of magnetic target, comprises retaining plate and is arranged on the bar magnet as above on described retaining plate; The bulge-structure of described bar magnet arranges towards described retaining plate projection.
Particularly, described magnetic target comprises a plurality of bar magnets, and described a plurality of bar magnets comprise the bar magnet that interleaves the bar magnet of the inside N utmost point of arranging, the peripheral S utmost point and the inner S utmost point, the peripheral N utmost point.
Preferably, described bar magnet is permanent magnet or electro-magnet.
Further, described retaining plate is provided with slide rail, and described bar magnet is connected on this slide rail in the mode that can move on described slide rail.
The present invention also provides a kind of magnetron sputtering equipment, comprises target, backboard and magnetic target as above, and described target is arranged on a side of described backboard, and described magnetic target is arranged on the opposite side of this backboard.
Further, also comprise drive unit, this drive unit is used for driving described bar magnet to move along the default track that drives.
(3) beneficial effect
Compare with product with prior art, the present invention has the following advantages:
Bar magnet provided by the invention, target and magnetron sputtering equipment, the bulge-structure being provided with by bar magnet, in adopting magnetron sputtering mode deposit film process, for magnetron sputtering region provides magnetic induction density strength distribution uniform magnetic field, guarantee that the film thickness of deposition is even.
Accompanying drawing explanation
Fig. 1 is trajectory of electron motion schematic diagram in magnetron sputtering equipment in prior art;
Fig. 2 is the vertical view of a kind of bar magnet of the present invention;
Fig. 3 is the vertical view of another kind of bar magnet of the present invention;
Fig. 4 is the side-view of bar magnet of the present invention;
Fig. 5 is the plan structure figure of magnetic target of the present invention;
Fig. 6 is the side-looking structure iron of magnetic target of the present invention;
Fig. 7 is the structure iron of magnetron sputtering equipment of the present invention.
In accompanying drawing, the component list of each assembly representative is as follows:
1-bar magnet; The bar magnet of the inner N utmost point of 11-, the peripheral S utmost point; The bar magnet of the inner S utmost point of 12-, the peripheral N utmost point; 3-retaining plate; 4-magnetic target; 5-backboard; 6-target; 7-substrate; 8-microscope carrier.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is made a detailed explanation.
The present embodiment provides a kind of bar magnet being arranged on magnetron sputtering equipment, and as shown in Figure 2, Figure 3 and Figure 4, the region intermediate of this bar magnet 1 is provided with bulge-structure.When substrate is adopted to the mode deposit film of magnetron sputtering, bulge-structure on this bar magnet 1 is towards described substrate bumps setting, the two ends that make bar magnet than bar magnet region intermediate away from described substrate, thereby, the magneticstrength that bar magnet end positions provides dies down, the defect that magneticstrength is strong, region intermediate magneticstrength is weak of marginal position that overcomes the close two ends of existing linear pattern bar magnet, forms magnetic induction density magnetic field comparatively uniformly in magnetron sputtering region.
Described bulge-structure can adopt various structures, such as warp architectures such as arcs, can solve technical problem of the present invention.The present embodiment preferably adopts a kind of bulge-structure, and this bulge-structure is for to be arranged on the bending structure on described bar magnet along this bar magnet length direction.This bending structure is simple, is easy to manufacture.And, the angle of the bending structure on this bar magnet can be adjusted the bending angle of bar magnet according to the square resistance of film and the measuring parameters such as thickness of film of deposition, guarantee for magnetron sputtering region provides magnetic induction density uniform magnetic field, and can be on substrate sputtering sedimentation form the film of even thickness.
Preferably, the bending angle scope of described bending structure is 165 °～178 °.When the bending angle of bending structure is less than 165 °, can cause the angle of bar magnet bending excessive, can make the fringe magnetic field at our bar magnet two ends reduce too much, cause new film forming heterogeneity phenomenon; When the bending angle of bending structure is greater than 178 °, similar with the effect of linear bar magnet, do not have the effect of adjusting bar magnet edges at two ends part magneticstrength.To sum up, preferably the angular range of 165 °-178 ° as the bending angle scope of bending structure of the present invention.
Particularly, described bar magnet 1 is divided into two kinds, and a kind of is the bar magnet 11 of the inner N utmost point, the peripheral S utmost point;
The bar magnet 12 of the inner S utmost point, the peripheral N utmost point;
Preferably, described bar magnet 1 is permanent magnet or electro-magnet.
The present embodiment provides a kind of magnetic target, as shown in Figure 5 and Figure 6, comprises retaining plate 3 and is arranged on the bar magnet as above 1 on described retaining plate 3; The bulge-structure of described bar magnet 1 arranges towards described retaining plate 3 projections.Described bar magnet 1 is one or more.When magnetic target comprises a plurality of bar magnets 1, described a plurality of bar magnets 1 comprise the bar magnet 12 that interleaves the bar magnet 11 of the inside N utmost point of arranging, the peripheral S utmost point and the inner S utmost point, the peripheral N utmost point.
Further, described retaining plate 3 is provided with slide rail (not shown), and described bar magnet is connected on this slide rail in the mode that can slide on described slide rail.
The present embodiment also provides a kind of magnetron sputtering equipment, as shown in Figure 7, comprises target 6, backboard 5 and magnetic target 4 as above, and described target 6 is arranged on the downside of described backboard 5, and described magnetic target 4 is arranged on the upside of this backboard 5.Microscope carrier 8 is arranged on the below of target 6, and microscope carrier 8 upsides are placed the substrate 7 for deposit film.Described bar magnet 1 can be on slide rail move reciprocatingly along the in-plane that is parallel to target 6, thereby provides magnetic field for magnetron sputtering region.
Further, described magnetron sputtering equipment also comprises drive unit, and this drive unit is used for driving described bar magnet to move along the default track that drives.
Above embodiment is only for illustrating the present invention; and be not limitation of the present invention; the those of ordinary skill in relevant technologies field; without departing from the spirit and scope of the present invention; can also make a variety of changes and modification; therefore all technical schemes that are equal to also belong to category of the present invention, and scope of patent protection of the present invention should be defined by the claims.
Claims (10)
1. a bar magnet, is characterized in that, described bar magnet is provided with bulge-structure at region intermediate.
2. bar magnet according to claim 1, is characterized in that, described bulge-structure is for to be arranged on the bending structure on described bar magnet along this bar magnet length direction.
3. bar magnet according to claim 1, is characterized in that, the bending angle scope of described bending structure is 165 °～178 °.
4. bar magnet according to claim 1, is characterized in that, described bar magnet comprises:
The peripheral S utmost point and the inner N utmost point;
Or, the peripheral N utmost point and the inner S utmost point.
5. a magnetic target, is characterized in that, comprises retaining plate and is arranged on the bar magnet as described in claim 1～4 any one on described retaining plate; The bulge-structure of described bar magnet arranges towards described retaining plate projection.
6. magnetic target according to claim 5, is characterized in that, described magnetic target comprises a plurality of bar magnets, and described a plurality of bar magnets comprise the bar magnet that interleaves the bar magnet of the inside N utmost point of arranging, the peripheral S utmost point and the inner S utmost point, the peripheral N utmost point.
7. magnetic target according to claim 5, is characterized in that, described bar magnet is permanent magnet or electro-magnet.
8. magnetic target according to claim 5, is characterized in that, described retaining plate is provided with slide rail, and described bar magnet is connected on this slide rail in the mode that can move on described slide rail.
9. a magnetron sputtering equipment, is characterized in that, comprises target, backboard and the magnetic target as described in claim 5～8 any one, and described target is arranged on a side of described backboard, and described magnetic target is arranged on the opposite side of this backboard.
10. magnetron sputtering equipment according to claim 9, is characterized in that, also comprises drive unit, and this drive unit is used for driving described bar magnet to move along the default track that drives.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201310739712.0A CN103668096B (en) | 2013-12-26 | 2013-12-26 | Bar magnet, magnetic target and magnetron sputtering equipment |
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| CN201310739712.0A CN103668096B (en) | 2013-12-26 | 2013-12-26 | Bar magnet, magnetic target and magnetron sputtering equipment |
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| CN103668096A true CN103668096A (en) | 2014-03-26 |
| CN103668096B CN103668096B (en) | 2015-08-12 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105088162A (en) * | 2015-09-02 | 2015-11-25 | 京东方科技集团股份有限公司 | Magnetic control board, magnetic control device and magnetic control sputtering device |
| CN105506565A (en) * | 2014-10-20 | 2016-04-20 | 昆山国显光电有限公司 | Magnetron sputtering equipment and magnetic body device thereof |
| CN108611616A (en) * | 2018-07-20 | 2018-10-02 | 江西沃格光电股份有限公司 | Coil mechanism and magnetic control sputtering device |
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| JPS60200962A (en) * | 1984-03-23 | 1985-10-11 | Hitachi Ltd | Planar magnetron sputtering method |
| JPH02254158A (en) * | 1989-03-28 | 1990-10-12 | Anelva Corp | Thin film forming device |
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| CN101080510A (en) * | 2005-09-29 | 2007-11-28 | 新明和工业株式会社 | Magnet structure for magnetron sputtering and cathode electrode unit and magnetron sputtering equipment |
| CN101300657A (en) * | 2004-03-05 | 2008-11-05 | 东京毅力科创株式会社 | Magnetically enhanced capacitive plasma source for ionized physical vapor deposition |
| CN201162043Y (en) * | 2008-03-21 | 2008-12-10 | 北京京东方光电科技有限公司 | Magnetron sputtering target structure and equipment |
| CN101545094A (en) * | 2008-03-28 | 2009-09-30 | 应用材料公司 | Rectangular magnetron with assistant edge magnets |
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2013
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| JPS59200763A (en) * | 1983-04-30 | 1984-11-14 | Fujitsu Ltd | Sputtering device |
| JPS6357502B2 (en) * | 1983-04-30 | 1988-11-11 | Fujitsu Ltd | |
| JPS60200962A (en) * | 1984-03-23 | 1985-10-11 | Hitachi Ltd | Planar magnetron sputtering method |
| JPH02254158A (en) * | 1989-03-28 | 1990-10-12 | Anelva Corp | Thin film forming device |
| CN1531771A (en) * | 2001-03-20 | 2004-09-22 | ��Ĭ���� | Improved permanent magnet rotor design |
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| CN101080510A (en) * | 2005-09-29 | 2007-11-28 | 新明和工业株式会社 | Magnet structure for magnetron sputtering and cathode electrode unit and magnetron sputtering equipment |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105506565A (en) * | 2014-10-20 | 2016-04-20 | 昆山国显光电有限公司 | Magnetron sputtering equipment and magnetic body device thereof |
| CN105506565B (en) * | 2014-10-20 | 2018-04-13 | 昆山国显光电有限公司 | Magnetron sputtering apparatus and its magnet apparatus |
| CN105088162A (en) * | 2015-09-02 | 2015-11-25 | 京东方科技集团股份有限公司 | Magnetic control board, magnetic control device and magnetic control sputtering device |
| WO2017036106A1 (en) * | 2015-09-02 | 2017-03-09 | 京东方科技集团股份有限公司 | Magnetic control board, magnetic control device and magnetic control sputtering device |
| CN105088162B (en) * | 2015-09-02 | 2019-03-05 | 京东方科技集团股份有限公司 | A kind of magnetic control plate, magnetic control means and magnetic control sputtering device |
| CN108611616A (en) * | 2018-07-20 | 2018-10-02 | 江西沃格光电股份有限公司 | Coil mechanism and magnetic control sputtering device |
| CN108611616B (en) * | 2018-07-20 | 2020-10-16 | 江西沃格光电股份有限公司 | Coil mechanism and magnetron sputtering device |
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| CN103668096B (en) | 2015-08-12 |
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