CN104164655B - A kind of magnetic control sputtering device - Google Patents
A kind of magnetic control sputtering device Download PDFInfo
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- CN104164655B CN104164655B CN201410467294.9A CN201410467294A CN104164655B CN 104164655 B CN104164655 B CN 104164655B CN 201410467294 A CN201410467294 A CN 201410467294A CN 104164655 B CN104164655 B CN 104164655B
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Abstract
The invention discloses a kind of magnetic control sputtering device, including: the double-rail configuration that the U-shaped plate being oppositely arranged is formed, the U-shaped mouth of double-rail configuration is relative, it is arranged under double-rail configuration between edge and relative to the electrode block of edge movement under double-rail configuration, and it is arranged in the middle of double-rail configuration, and it is positioned at above electrode block the multiple target block becoming form in upright arrangement, multiple target block moves above electrode block along double-rail configuration, wherein, electrode block electrically connects with multiple target block, it is arranged in double-rail configuration the rare gas transmitting tube having bleeder port on edge on the first track, bleeder port is towards multiple target block.When solving the thin film of magnetic control sputtering device stoichiometric proportion needed for realizing in prior art, it is impossible to by component ratio continuously adjustable technical problem such that it is able to realize the technique effect that continuous film component is adjusted continuously.
Description
Technical field
The present invention relates to sputtering coating equipment field, particularly relate to a kind of magnetic control sputtering device.
Background technology
Sputtering is current wide variety of coating technique, sputtering method is to import in Dewar vessel by rare gas such as argon, and make it produce glow discharge to the negative electrode comprising target to direct current (DC) electric power or high frequency (RF, AC) electric power, the lotus energy particle bombardment surface of solids (target), makes the phenomenon that solid atom (or molecule) penetrates from surface.Magnetron sputtering has " at a high speed ", " low temperature " feature, can be at any thin film crossing material of any deposited on substrates.Become the main flow of sputtering technology, be widely used in microelectronics, optical thin film and field of material surface treatment.
Multi-layer film structure is the focus in microelectronics, field of optical films, and reasonable in design can sputtering continuously during multilayer film device is necessary.In microelectronic, microwave device is proposed and has rapid response speed by people, small size, broadband, the requirement such as high sensitivity and low-work voltage, and thin-film device such as thin film capacitor is just increasingly paid close attention to.Photonic crystal is a kind of new optical material occurred in recent years, is the artificial crystal material being made up of the bi-material periodic arrangement that node parameter is different.The bandgap structure of photonic crystal is most important characteristic, is also the basis of photonic crystal applications exploitation, and the forbidden band self-energy loss of the photonic crystal of assembly of thin films structure is relatively low, but energy gap is limited, and occurs that wider total-angle high-reflection is penetrated the most accurate.
Along with research and development and the application of the advanced materials such as high temperature superconducting materia, doped luminescent material, magnetic material, shape-memory material, semiconductor alloy material, multicomponent thin-film material is of increasing concern.The performance of material is very sensitive to the composition of its constituent element, and the property of multicomponent thin-film material depends primarily on the ratio of each constituent element.Particularly trace element is relatively big, therefore it is required that when thin film is prepared in sputtering, the sputtering of each constituent element can accuracy controlling to the performance impact of trace doped thin film.
In order to obtain the thin film of required stoichiometric proportion, currently mainly use the technology such as More target sputtering together, alloys target or paster target.When using alloys target or the sputtering of paster target technology, due to the difference of various target materials sputtering threshold value energy, there is bigger component deviation with target material in the thin-film material that result is deposited, but alloys target or each component ratio of paster target are again can not continuously adjustable.And More target sputtering together can produce field coupling between each target, the problem interfered, it is greatly improved the complexity of equipment simultaneously and improves cost.
Summary of the invention
The embodiment of the present invention is by providing a kind of magnetic control sputtering device, solve magnetic control sputtering device of the prior art when realizing the thin film of required stoichiometric proportion, use alloys target or each component ratio of paster target cannot continuously adjustable technical problem, and then achieve and each component ratio can be carried out continuously adjustable technique effect.
Embodiments provide a kind of magnetic control sputtering device, including: the double-rail configuration that the U-shaped plate being oppositely arranged is formed, the U-shaped mouth of double-rail configuration is relative, the electrode block being arranged under double-rail configuration between edge and move relative to double-rail configuration, and it is arranged in the middle of double-rail configuration, and it is positioned at above electrode block the multiple target block becoming form in upright arrangement, multiple target block moves above electrode block along double-rail configuration, wherein, electrode block electrically connects with multiple target block, it is arranged in double-rail configuration the rare gas transmitting tube having bleeder port on edge on the first track, bleeder port is towards multiple target block.
Further, along being carved with scale on the second track in double-rail configuration.
Further, the double-rail configuration that the U-shaped plate being oppositely arranged is formed is rectilinear configuration structure or circulus.
Further, the translational speed of electrode block matches with the translational speed of substrate to be sputtered.
Further, multiple target block formation close to each other multiple combination target.
Further, also include: double-rail configuration is provided with cooling water pipeline.
Further, multiple target block can be loaded and unloaded by between double-rail configuration.
The one or more technical schemes provided in the embodiment of the present invention, at least have the following technical effect that or advantage:
1, owing to have employed magnetic control sputtering device provided by the present invention, the electrode block that can move relative to two-orbit is set between the double-rail configuration that the U-shaped plate being oppositely arranged is formed, and it is arranged in the middle of double-rail configuration, and it is positioned at above electrode block the multiple target block becoming form in upright arrangement, wherein, multiple target block moves above electrode block along double-rail configuration, electrode block electrically connects with multiple target, when substrate to be sputtered moves past multiple target block successively, the thin film of these several target block mixed types can be sputtered, when solving the thin film of magnetic control sputtering device stoichiometric proportion needed for realizing in prior art, cannot be by multiple film composition ratio continuously adjustable technical problem, it is thus possible to realize the technique effect that continuous multiple film composition is adjusted continuously.
2, due on the second track in double-rail configuration along being carved with scale, can move according to precise displacement when multiple target block can be made to move in two-orbit, so that more accurate when film composition is adjusted continuously.
Accompanying drawing explanation
Fig. 1 is the structural representation of magnetic control sputtering device in the embodiment of the present invention；
Fig. 2 is that in the embodiment of the present invention, double-rail configuration is the structural representation of loop configuration；
Fig. 3 is the cross section structure schematic diagram of magnetic control sputtering device in the embodiment of the present invention.
Detailed description of the invention
The embodiment of the present invention is by providing a kind of magnetic control sputtering device, solve magnetic control sputtering device of the prior art when realizing the thin film of required stoichiometric proportion, use alloys target or each component ratio of paster target cannot continuously adjustable technical problem, and then achieve and each component ratio can be carried out continuously adjustable technique effect.
In order to solve above-mentioned employing alloys target or paster target component ratio cannot continuously adjustable technical problem,
Below in conjunction with Figure of description and specific embodiment, technique scheme is described in detail.
A kind of magnetic control sputtering device that the embodiment of the present invention provides, as shown in Figure 1, including: the double-rail configuration 101 that the U-shaped plate being oppositely arranged is formed, the U-shaped mouth of double-rail configuration is relative, the electrode block 102 being arranged between 101 times edges of double-rail configuration and move relative to double-rail configuration 101, and it is arranged in the middle of double-rail configuration 101, and it is positioned at above electrode block 102 the multiple target block 103 becoming form in upright arrangement, multiple target block 103 moves above electrode block 102 along double-rail configuration 101, wherein, electrode block 102 electrically connects with multiple target block 103, it is arranged in double-rail configuration 101 the rare gas transmitting tube 104 having bleeder port on edge on first track, bleeder port is towards multiple target block 103.
The thickness of electrode block 102 and double-rail configuration 101 times are along consistency of thickness.The electric insulation of electrode block 102 and double-rail configuration 101, its built-in Magnet, and be permanent magnet, and symmetrically place.
Multiple target block 103 is arrangement in upright arrangement in double-rail configuration 101.
Being arranged in double-rail configuration 101 the rare gas transmitting tube 104 having bleeder port on edge on first track in this magnetic control sputtering device, concrete can be argon.Gas positive ion bombardment multiple target block 103 surface can be launched, so that the atom on multiple target block 103 surface or molecule therefrom overflow by bleeder port.
Along being carved with scale 105 on the second track in double-rail configuration 101, precision can be as accurate as 1mm.By the mark of scale 105, can accurately multiple target block be moved forward and backward.
It is to electrically connect between electrode block 102 with multiple target block 103, and electrode block 102 moves forward and backward along double-rail configuration 101, and the translational speed of electrode block 102 is consistent with the translational speed being accepted the substrate of magnetron sputtering.Driven the substrate support supporting substrate to move linearly by motor, substrate on the substrate holder simultaneously can rotation, thus drive electrode block 102 to move (note: substrate support rectilinear movement has driven substrate rotation, it is all to be provided power by same motor that the movement of electrode block and support move), the different translational speeds of whole parts can be limited in any region.The power supply connect due to electrode block 102 can be direct current can also be high frequency, certainly, this is also determined by sputtered side material.
Double-rail configuration can be rectilinear configuration structure, as shown in Figure 1；Can also is that circulus, as shown in Figure 2.In the double-rail configuration 101 of circulus, the rare gas transmitting tube being provided with bleeder port is edge on outer race track, and carving graduated track is edge on inner race track.
In a particular embodiment, in the double-rail configuration of rectilinear configuration structure, multiple target block is followed successively by kind A, kind B, kind C, then, when substrate moves between the double-rail configuration of this rectilinear configuration structure, first move forward, return again to mobile, then form the thin film of ABCBA type；When in the double-rail configuration of loop configuration, the e.g. loop configuration of tetragon, multiple target block in each edge is followed successively by kind A, kind B, kind C, when backing tape moving electrode block moves to the rail end point of double-rail configuration in another direction double-rail configuration motion, thus obtain the thin film of ABCABC type, therefore, it is sequentially placed different target blocks 103 at different tracks, it is achieved the sputtering of any kind of plural layers.
The kind of target block 103 and quantity are to be determined by the thin film of required sputtering, by opening the upper edge of double-rail configuration 101, multiple target block 103 can load and unload, it is similar to type printing form, thus different types of target block 103 can be combined, ratio kind A described above, kind B, the combination of kind C, by dismounting target block, it is also possible to be kind B, kind D, kind E etc., the most just repeat no more, by the dismounting to target block, it is achieved the formation of polytype thin film, when sputtering starts, multiple target block 103 is fixed.
By close to each other for multiple target block 103, constitute combination type combination target, such that it is able to sputtering multicomponent thin film.Being moved forward and backward according to scale precision by combination target, by combination target being moved into or moved out the setpoint distance of electrode block 102 upper area, thus it is the most adjustable to realize film composition continuous print.The width of multiple combination target is to be determined by the constituent element quantity of sputtering multicomponent thin film, such as, and the sputtering of m constituent element thin film, it is necessary to the width of the width summation of m kind target block is as the width of electrode block 102.
Around double-rail configuration 101, cooling water pipeline is set, so that this magnetic control sputtering device can dispel the heat in time.
So that the structure of this magnetic control sputtering device is definitely, as it is shown on figure 3, be the cross section structure schematic diagram of this magnetic control sputtering device.
Owing to using magnetic control sputtering device provided by the present invention, the electrode block that can move relative to double-rail configuration is set between the double-rail configuration that the U-shaped plate being oppositely arranged is formed, and it is arranged in the middle part of two-orbit, and it is positioned at above electrode block the multiple target block becoming form in upright arrangement, multiple target block moves above electrode block along double-rail configuration, wherein, electrode block electrically connects with multiple target block, it is arranged in double-rail configuration the rare gas transmitting tube having bleeder port on edge on the first track, bleeder port is towards multiple target block, it is thus possible to realize continuous film component continuously, the most adjustable.
Although preferred embodiments of the present invention have been described, but those skilled in the art once know basic creative concept, then these embodiments can be made other change and amendment.So, claims are intended to be construed to include preferred embodiment and fall into all changes and the amendment of the scope of the invention.
Obviously, those skilled in the art can carry out various change and modification without deviating from this to the present invention
Bright spirit and scope.So, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.
Claims (7)
1. a magnetic control sputtering device, it is characterized in that, including: the double-rail configuration that the U-shaped plate being oppositely arranged is formed, the U-shaped mouth of double-rail configuration is relative, the electrode block being arranged under double-rail configuration between edge and move relative to double-rail configuration, and it is arranged in the middle of double-rail configuration, and it is positioned at above electrode block the multiple target block becoming form in upright arrangement, multiple target block moves above electrode block along double-rail configuration, wherein, electrode block electrically connects with target block, it is arranged in double-rail configuration the rare gas transmitting tube having bleeder port on edge on the first track, bleeder port is towards multiple target block.
Magnetic control sputtering device the most according to claim 1, it is characterised in that along being carved with scale on the second track in double-rail configuration.
Magnetic control sputtering device the most according to claim 1 and 2, it is characterised in that the double-rail configuration that the U-shaped plate being oppositely arranged is formed is rectilinear configuration structure or circulus.
Magnetic control sputtering device the most according to claim 1, it is characterised in that the translational speed of electrode block is consistent with the translational speed being accepted the substrate of magnetron sputtering.
Magnetic control sputtering device the most according to claim 4, it is characterised in that multiple target block formation close to each other multiple combination target.
Magnetic control sputtering device the most according to claim 1, it is characterised in that also include: double-rail configuration is provided with cooling water pipeline.
Magnetic control sputtering device the most according to claim 1, it is characterised in that multiple target block can be loaded and unloaded by between double-rail configuration.
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| CN201410467294.9A CN104164655B (en) | 2014-09-15 | 2014-09-15 | A kind of magnetic control sputtering device |
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| CN201410467294.9A CN104164655B (en) | 2014-09-15 | 2014-09-15 | A kind of magnetic control sputtering device |
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| CN104164655B true CN104164655B (en) | 2016-08-24 |
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| CN104513965A (en) * | 2014-12-22 | 2015-04-15 | 深圳市拓日新能源科技股份有限公司 | Magnetron sputtering and coating equipment for silicon nitride deposition and coating method |
| CN106350777B (en) * | 2016-11-22 | 2019-01-15 | 新奥光伏能源有限公司 | A kind of magnetic control sputtering cathode device and magnetic control sputtering device |
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