JP5509041B2 - Film forming method and film forming apparatus - Google Patents

Description

  The present invention relates to a film forming method and a film forming apparatus. For example, the present invention relates to a film forming method and a film forming apparatus for discharging a target particle from a target surface and attaching the target particle to the surface of an object to be processed to form a thin film.

As a method for forming a thin film, for example, a film forming method (hereinafter referred to as a sputtering method) such as a sputtering (sputtering) method, an arc ion plating method, or an arc plasma deposition method is used in a wide range of fields. When forming a thin film by these film forming methods, a target made of a single material or a target obtained by solidifying a mixed material is used. Then, by colliding electrons with the target or by dissolving and evaporating the target, the constituent material of the target is deposited on the object to be processed to form a thin film.
In addition, those that have been surface-treated with mixed thin films (multi-element thin films) containing multiple elements have improved heat resistance, wear resistance, electrical conductivity, etc., so sliding machine parts, semiconductor LSIs, and magneto-optical disks It is used in a wide range of fields.
In such a sputtering method or the like, a single alloy target corresponding to the composition ratio of a thin film to be formed or a plurality of targets made of different materials depending on the composition is used as the target. These targets are provided so that the target particle emission range is larger than the surface area of the object to be processed, and the film forming range is generally substantially circular. For this reason, when the object to be processed is small, a plurality of objects to be processed are often packed in a jig such as a yatoi to form a film by a batch method.
For example, Patent Document 1 includes a CuMn target that is formed in an annular shape in which a cross section is inclined inward in a processing container, and to which a variable DC power source is connected. By performing sputtering of a CuMn target on a semiconductor wafer as a processing body, and changing the bias voltage applied to the CuMn target, the pressure in the processing container, the applied power, etc., the first and second film forming steps are performed, A sputter film forming method and a sputter film forming apparatus for forming alloy films having different composition ratios are described.
In the apparatus described in Patent Document 1, target particles sputtered from a CuMn target expand in an annular shape, and a film formation range is formed in a circular shape having a larger area than the semiconductor wafer.

Japanese Patent No. 4324617

However, the conventional film forming method and film forming apparatus as described above have the following problems.
In the conventional technique including the technique described in Patent Document 1, the film formation range is set wider than the surface area of the object to be processed in order to reliably form a film on the object to be processed arranged at a fixed position in the apparatus. Has been. For this reason, there is a problem that a large amount of target particles that are not formed on the object to be processed are generated, and the use efficiency of the target is poor.
In order to improve the efficiency of target use, it is conceivable to deposit multiple objects to be processed in a jig such as Yatoi, and perform film formation in a batch mode. However, it takes time to pack and take out the jig. In addition, when replacing the processed object batch that has been molded with the next processed object batch, it takes time to evacuate the film forming apparatus again, resulting in poor productivity.

  The present invention has been made in view of the above problems, can improve the use efficiency of the target, can easily adjust the composition and film thickness, and can form a thin film having a different film configuration. An object is to provide a film forming method and a film forming apparatus capable of improving efficiency.

  In order to solve the above-described problems, the film forming method of the present invention is a method in which a target particle is released from a target surface inside a vacuum vessel, and the target particle is attached to the surface of an object to be processed to form a thin film. It is a film | membrane method, Comprising: The said target is comprised from the several target piece which consists of two or more types of materials according to the several predetermined film | membrane structure, The several target piece which can output-set this several target piece independently A plurality of electrodes disposed on the common electrode electrically connected to the cathode of the power source and disposed in the vicinity of any of the plurality of target pieces so as to be electrically connected to the anode of the power source, respectively. Information on the film configuration formed on each of the objects to be processed by moving two or more of the objects to be processed along a movement path crossing the plurality of target pieces with a time difference. And selectively supplying power to at least one of the plurality of electrodes based on the information on the movement position of each of the objects to be processed, and selectively target particles from any of the plurality of target pieces. The method of forming the film structure corresponding to each of the objects to be processed on each surface of the object to be processed is released.

  In the film forming method of the present invention, the two or more objects to be processed that are moved with a time difference along the movement path are simultaneously moved on the movement path, so that two or more places on the movement path are obtained. It is preferable to perform film formation in parallel.

  Moreover, in the film-forming method of this invention, it differs from the other to-be-processed object of the said 2 or more to-be-processed object with respect to at least any to-be-processed object of the said 2 or more to-be-processed object. It is preferable to form a film structure.

  In the film forming method of the present invention, when the object to be processed crosses different types of target pieces, at least one of the moving speed of the object to be processed and the magnitude of the output power of the power source is changed. It is preferable to form an inclined layer in which the composition of the thin film continuously changes.

  The film forming apparatus of the present invention has a vacuum vessel, and releases the target particles from the target surface inside the vacuum vessel and attaches the target particles to the surface of the object to be processed to form a thin film. A plurality of power sources capable of independently setting the magnitude of the output power, and a plurality of target pieces made of two or more materials according to a plurality of predetermined film configurations, and constituting the target, A common electrode that is electrically connected to the cathodes of the plurality of electrodes and holds the plurality of target pieces, and is installed in the vicinity of the plurality of target pieces, and via individual wirings to the anodes of the plurality of power supplies A plurality of electrically connected electrodes, a target object moving unit that moves two or more of the target objects with a time difference on a movement path crossing the target pieces, and the target object movement Notified from the department Power is selectively supplied to at least one of the plurality of electrodes based on information on each movement position of the object to be processed and information on the film configuration formed on each of the objects to be processed, A film formation control unit that selectively releases target particles corresponding to each of the target objects from at least one of the plurality of target pieces.

  In the film forming apparatus of the present invention, the plurality of power supplies can independently adjust the output power in the range of 0% to 100%, and the film forming control unit can control the magnitude of the output power. It is preferable to do so.

  Further, in the film forming apparatus of the present invention, the plurality of target pieces are each formed in a rectangular shape in plan view, and are installed on the common electrode so that the long sides thereof are adjacent to each other, and the plurality of electrodes Are preferably arranged at positions facing each other across the target piece from the short side.

  Further, in the film forming apparatus of the present invention, an input chamber for introducing the object to be processed into the vacuum container in a state where the same atmosphere as the vacuum container is formed adjacent to the vacuum container, and the same as the vacuum container It is preferable that a discharge chamber for discharging the object to be processed after film formation from the vacuum container in a state where an atmosphere is formed is provided.

  According to the film forming method and the film forming apparatus of the present invention, two or more target objects are moved on a moving path traversing a plurality of target pieces with a time difference, and a film structure formed on each of the target objects is formed. Based on the information and each moving position of the object to be processed, target particles are selectively emitted from at least one of the plurality of target pieces, and each surface of the object to be processed is in accordance with each of the objects to be processed. Since the film formation is performed, the use efficiency of the target can be improved, the composition and the film thickness can be easily adjusted, and the film formation efficiency of a thin film having a different film structure can be improved. Play.

It is a typical front view which shows schematic structure of the film-forming apparatus which concerns on embodiment of this invention. 1 is a schematic plan view showing a schematic configuration of a film forming apparatus according to an embodiment of the present invention. It is AA sectional drawing in FIG. It is a functional block diagram which shows the function structure of the film-forming control part of the film-forming apparatus which concerns on embodiment of this invention. It is typical sectional drawing which shows an example of the film structure of the thin film formed into a film by the film-forming apparatus which concerns on embodiment of this invention. It is operation | movement explanatory drawing explaining operation | movement of the film-forming apparatus which concerns on embodiment of this invention, and its BB sectional drawing. It is typical sectional drawing which shows the structure of the principal part of the film-forming apparatus which concerns on the 1st modification of embodiment of this invention. It is typical sectional drawing which shows an example of the film | membrane structure of the thin film formed with the film-forming apparatus which concerns on the 1st modification of embodiment of this invention. It is typical sectional drawing which shows the structure of the principal part of the film-forming apparatus which concerns on the 2nd modification of embodiment of this invention. It is the typical front view and top view which show schematic structure of the film-forming apparatus which concerns on the 3rd modification of embodiment of this invention.

Embodiments of the present invention will be described below with reference to the accompanying drawings.
First, a film forming apparatus according to an embodiment of the present invention will be described.
FIG. 1 is a schematic front view showing a schematic configuration of a film forming apparatus according to an embodiment of the present invention. FIG. 2 is a schematic plan view showing a schematic configuration of the film forming apparatus according to the embodiment of the present invention. 3 is a cross-sectional view taken along line AA in FIG. FIG. 4 is a functional block diagram showing a functional configuration of the film formation control unit of the film formation apparatus according to the embodiment of the present invention. FIG. 5 is a schematic cross-sectional view showing an example of a film configuration of a thin film formed by the film forming apparatus according to the embodiment of the present invention.
In addition, since each figure is a schematic diagram, the dimension relationship and shape are exaggerated (the following drawings are also the same).

  As shown in FIGS. 1 to 3, the sputtering apparatus 1 of the present embodiment releases target particles from the surface of the target inside the vacuum vessel 2, and attaches the target particles to the surface of the workpiece W to form a thin film. A film forming apparatus to be formed. In the present embodiment, an example of an apparatus that performs DC magnetron sputtering will be described as an example.

The schematic configuration of the sputtering apparatus 1 includes a vacuum container 2 that forms a low-pressure inert atmosphere for performing sputtering, and an input chamber that is provided adjacent to the vacuum container 2 and in which the workpiece W is input to the vacuum container 2. 3 and a discharge chamber 4 which is provided adjacent to the vacuum vessel 2 and discharges the workpiece W on which a thin film is formed from the vacuum vessel 2.
In addition, the sputtering apparatus 1 includes a target unit 8 (target), a backing plate 7 (shared electrode), a magnet unit 6, electrodes E _{1 ,.} However, n is provided with the to-be-processed object moving part 9 and the movement guide 10). The electrode _E 1, ..., the number n of _{E n,} in the present embodiment, as an example, employs a n = 36.
In addition, the sputtering apparatus 1 includes a first power source 11, a second power source 12, a switch unit 13, and a film formation control unit 50 (film formation control unit) that operate the apparatus inside the vacuum container 2 outside the vacuum container 2. 4).

In the following, for the sake of simplicity, a subscripted code may be expressed using integer variables i, j, k, etc., whose ranges are defined. For example, the electrodes E _1, ..., when referring to one of the electrodes of the E _n, is an integer of i from 1 to n, which may be referred to as "electrode E _i". The electrode _E 1, ..., are collectively _{E n,} sometimes referred to as "the electrode _{E i".}

In this embodiment, the outer shape of the vacuum vessel 2 is a rectangular parallelepiped elongated in the horizontal direction, as shown in FIG. The outer wall of the vacuum vessel 2 is connected to a suction conduit 2b connected to a decompression means such as a vacuum pump (not shown) for decompressing the internal atmosphere, and to an inert gas supply source (not shown). 2 is connected to an inert gas supply pipe 2a for supplying an inert gas.
Examples of the inert gas supplied through the inert gas supply line 2a include an inert gas such as argon (Ar) gas.

In the present embodiment, the input chamber 3 is formed in a box shape adjacent to one end in the longitudinal direction of the vacuum vessel 2 as shown in FIGS.
In addition, the input chamber 3 is supplied through a gate valve 3a that opens and closes an opening (not shown) provided on the side and keeps airtight when closed, and an opening that is opened by the gate valve 3a in order to input the workpiece W. A mounting table 3c for mounting the object to be processed W therein, a transfer robot 3d for gripping the object to be processed W mounted on the mounting table 3c and moving it toward the vacuum vessel 2, and a transfer robot 3d In order to move the object to be processed W gripped in the inside of the vacuum vessel 2, an opening (not shown) provided at the boundary with the vacuum vessel 2 is opened and closed, and a gate valve 3b that keeps airtight when closed is provided.
The charging chamber 3 is connected to a pressure reducing means such as a vacuum pump (not shown) for reducing the pressure in the charging chamber 3. For this reason, the charging chamber 3 can be depressurized to the same degree of vacuum as the vacuum chamber 2 by driving the pressure reducing means while the gate valves 3a and 3b are closed. It has become.
The gate valves 3a and 3b and the transfer robot 3d are provided so that an operator can remotely operate them by a control unit (not shown).

In the present embodiment, the discharge chamber 4 is formed in a box shape adjacent to the other end portion in the longitudinal direction of the vacuum vessel 2 as shown in FIGS.
In addition, the discharge chamber 4 opens and closes an opening (not shown) provided at the boundary with the vacuum container 2 in order to move the workpiece W after film formation in the vacuum container 2 from the vacuum container 2, and is airtight when closed. A gate valve 4b that keeps moving, a transfer robot 4d that grips and moves the workpiece W moved in the vacuum vessel 2 when the gate valve 4b is opened, and a process that is moved by the transfer robot 4d A mounting table 4c for mounting the body W therein, and an opening (not shown) provided on the side for discharging the object W to be processed mounted on the mounting table 4c to the outside are opened and closed, and airtightness is achieved when the body W is closed. A gate valve 4a for maintaining.
The discharge chamber 4 is connected to a decompression means such as a vacuum pump (not shown) for decompressing the inside of the discharge chamber 4, similarly to the input chamber 3. Therefore, the discharge chamber 4 can be depressurized to the same degree of vacuum as the vacuum chamber 2 by driving the pressure reducing means while the gate valves 4a and 4b are closed. It has become.
Further, the gate valves 4a and 4b and the transfer robot 4d are provided so that an operator can remotely operate the control unit (not shown).

The target portion 8 is a solid material for releasing target particles made of atoms or molecules of the material forming the thin film from the surface. In this embodiment, as shown in FIG. ₁ ,..., T _n are arranged at a position near the bottom surface of the vacuum vessel 2 from the input chamber 3 toward the discharge chamber 4 so that their long sides are adjacent to each other in this order.
The shape and material of each target piece T _i is determined as appropriate according to the film structure of the thin film forming the shape and the workpiece W of the workpiece W. In the present embodiment, the size of each target element T _i is the short side length × long side length is a × b (However, a <b).
In the present embodiment, the target piece T _i of two or more materials according to a predetermined film composition for each target object W are arranged.

In the following, when a specific example of this embodiment is described, the shape of the object to be processed W is a disk having a diameter D of 15 mm and a thickness t of 3 mm as shown in FIG. Is described as being stainless steel.
In addition, as shown in FIG. 5, two types of film configurations of thin films 15A and 15B are set as the film configuration of the thin film formed on the workpiece W, as shown in FIG.
The thin film 15A includes a silicon (Si) film layer L _A1 having a thickness t _A1 of 300 nm and a diamond-like carbon having a thickness t _A2 of 600 nm on one surface in the thickness direction, which is a surface to be processed of the workpiece W. (diamond-like carbon, hereinafter referred to as DLC) and the film layer L _A2 is a multilayer film structure which are stacked in this order.
Here, the DLC film layer _{L A2} is provided as a surface layer to improve the surface smoothness and wear resistance of the surface of the workpiece W, Si film layer _{L A1} is improve the bonding strength of the DLC film layer _{L A2} Provided as an intermediate layer.
The thin film 15B has a chromium (Cr) film layer L _B1 having a thickness t _B1 of 300 nm and platinum (Pt) having a thickness t _B2 of 600 nm on one surface in the thickness direction, which is a surface to be processed of the object W. ) A multilayer film structure in which the film layer L _B2 is laminated in this order.
Here, the Pt film layer L _B2 is provided as a surface layer for improving the oxidation resistance of the surface of the workpiece W, and the Cr film layer L _B1 is an intermediate for improving the bonding strength of the Pt film layer L _B2. Provided as a layer.

The specific dimension of each target piece T _i is preferably such that when the thin film 15A is formed on the target object W, the short side length a is equal to or smaller than the diameter D of the target object W. In this embodiment, a = 15 (mm) is adopted. The long side length b is b = 30 (mm).
The material of each target piece _{T i,} in order to deposit the Si layer _L A1, Cr layer _L B1, DLC film layer _L A2, Pt film layer _{L B2,} as an example, a target piece _T 1 through T ₅ pieces up to 5 are Si, 5 pieces from the target pieces T _{6 to} T ₁₀ are Cr, 13 pieces from the target pieces T _{11 to} T ₂₃ are carbon (C), up to the target pieces T _{24 to} T ₃₆ 13 sheets are made of Pt.
The thickness of each target piece T _i is the consumption of the target material at the time of film formation, depending on the process number and the like of the object to be processed W, may be appropriately set.
With such a configuration, the target portion 8 of the present embodiment is formed in a rectangular band shape having a width of 30 mm and a length of 540 mm in plan view.

The backing plate 7, as shown in FIGS. 1-3, a target piece T _1, ..., a conductive member for horizontally holding the configured target portion 8 in its lower surface at T _n.
In the present embodiment, a copper rectangular plate that is slightly larger than the outer shape of the target portion 8 in plan view is employed. For this reason, the entire lower surface of the target portion 8 is received.
In this embodiment, each target piece _Ti is directly bonded to the surface of the backing plate 7. The target piece _Ti and backing plate 7 can be deposited by screwing or simply placing them in addition to bonding, but the heat generated in the target during deposition is efficiently transferred to reduce the target temperature rise. it is desirable to is fixed by the bonding of the target piece T _i on the backing plate 7.
The backing plate 7 having such a configuration is electrically connected to the cathodes of the first power supply 11 and the second power supply 12 via the cathode wirings 11b and 12b led from the inside of the vacuum vessel 2 to the outside. ing. For this reason, each target piece _Ti is held on a plane that is equipotential.

Magnet unit 6, as shown in FIG. 3, a plate-shaped member for generating a magnetic field 14 toward the longitudinal center from both ends of the respective longitudinally each target piece T _i on the backing plate 7, a backing plate In FIG. 7, it is arranged on the plate surface opposite to the side where the target portion 8 is fixed.
For this reason, the magnet unit 6 is provided with S poles 6 a at positions corresponding to the center in the short direction of the target portion 8, and N poles 6 b are provided at both ends in the short direction of the target portion 8. . In this embodiment, both the S pole 6a and the N pole 6b employ permanent magnets.
Such magnet unit 6, on the target portion 8 in a cross section along the longitudinal direction of each target piece T _i, from the surface of the target portion 8 with toward the center from the longitudinal ends of each target piece T _i A magnetic field 14 having a convex bow shape is formed.

Each electrode E _i is an electrode member for sputtering the target piece T _i by each discharging to each target strip T _i.
In the present embodiment, each electrode E _i is composed of a pair of metal plates whose width in the short direction is slightly shorter than the width of the corresponding target piece T _i . Each electrode E _i is placed in the vicinity of the short side of each target piece T _i , with the longitudinal direction along the vertical axis and with the target piece T _i interposed therebetween. .
Specifically, as shown in the example of the electrode E ₁ and the target piece T _{1 in} FIG. 3, each electrode E _i is d = 1 (mm) in the horizontal direction with respect to the short side of each target piece T _i. It is arranged at a position near the space. Further, the upper end of each electrode E _i protrudes by h ₁ = 5 (mm) with respect to the upper surface of each target piece T _i .
The electrode E _1, ..., the E _n, as shown in FIG. 1, lines w ₁ individual was directed towards the inside to the outside of the vacuum vessel _2, ..., w _n are connected, it will be described later, respectively The switch unit 13 is electrically connected to terminals of the first switch 13A and the second switch 13B.

The workpiece moving unit 9 horizontally holds the workpiece surface of the workpiece W facing downward, and holds the workpiece W in the horizontal direction along the longitudinal direction of the target unit 8 above the target unit 8. It is to be moved.
The object moving unit 9 is attached to the movement guide 10 so as to be movable inside the vacuum vessel 2.

A moving mechanism for moving the object moving unit 9 can be provided in at least one of the object moving unit 9 and the movement guide 10. As such a moving mechanism, for example, a moving mechanism in which a transmission mechanism such as a screw feeding mechanism, a gear, a belt, and a wire and a motor are combined, a moving mechanism using a linear motor, or the object moving unit 9 is provided. A self-propelled mechanism using the movable guide 10 as a guide can be employed.
Further, as the holding mechanism of the object to be processed W in the object to be processed moving unit 9, a chucking mechanism that grips the side surface of the object to be processed W toward the center can be adopted.
The object moving unit 9 is connected to a film formation control unit 50 (described later) via a wiring (not shown) so as to be able to start, stop, and stop based on a control signal from the film formation control unit 50. The moving speed is controlled.
Further, the object moving unit 9 includes position detecting means such as an encoder and a position sensor, for example, and can notify the film forming control unit 50 of information on the moving position in the moving path.

The movement guide 10 is a member that determines the movement path of the workpiece moving unit 9. The movement guide 10 extends above the target unit 8 in the horizontal direction parallel to the target unit 8 along the longitudinal direction of the target unit 8. Yes.
Arranged on each target piece T _i of the moving guide 10, as shown the positional relationship between the target piece T ₁ in FIG. 3, the center is the target piece of the object to be processed W held by the workpiece moving section 9 facing the center of the longitudinal direction of the T _i (short direction of the target portion 8), which is the arrangement in which the lower surface of the workpiece W is separated from the upper surface of each target piece T _i by a distance h _2.
Therefore, the moving path of the workpiece W by the workpiece moving unit 9 is on the target portion 8, has a respective target strip T _i in the path that traverses above its longitudinal center.
Distance h ₂ for each target piece T _i of the target object W on the movement route is set appropriately in terms of use efficiency of the size and the target material of the workpiece W.
In the present embodiment, in the direction in which the plan view of the size of the deposition region target particles released is an area attached to the surface of the well object W from the target piece T _i is orthogonal to the moving path, While slightly exceeding the size of the processing surface of the workpiece W in the same direction, the size of the film formation region in the direction orthogonal to the movement path is smaller than the size of the processing surface of the workpiece W in the same direction. so that, it has set a distance h _2.
In this embodiment, as an example, such a film formation region is realized by setting h ₂ = 50 (mm).

The movement guide 10 may be a linear guide in which the object moving unit 9 can reciprocate on the target unit 8, or the object moving unit 9 may circulate and move in a certain direction. A closed curved guide may be used.
In the case where the movement guide 10 is provided in a closed curve shape, even if there are a plurality of target object moving parts 9, a plurality of the target object moving parts 9 are circulated and moved in one direction so that the input chamber is located above the target part 8. A plurality of workpiece moving parts 9 can be moved simultaneously in one direction from 3 to the discharge chamber 4.

The first power supply 11 and the second power supply 12 are DC power supplies that can independently set the magnitude of output power. In the present embodiment, it is possible to supply power with an output power of 2 kW.
As shown in FIG. 1, the cathodes of the first power supply 11 and the second power supply 12 are electrically connected to the backing plate 7 via the cathode wirings 11b and 12b, respectively.
The anodes of the first power supply 11 and the second power supply 12 are electrically connected to the switch unit 13 via the anode wiring 11a and the anode wiring 12a, respectively.

Switch unit 13, the output power of the first power source 11 and the second power source 12, respectively electrodes E _1, ..., a selection means for selectively applying to one of E _n, the first power source 11 or on -The n first switches 13A for turning on / off the off current and the n second switches 13B for turning on / off the direct current from the second power source 12 are provided.
One contact of each first switch 13A is electrically connected to the anode of the first power supply 11 via the anode wiring 11a. One contact of each second switch 13B is electrically connected to the anode of the second power supply 12 via the anode wiring 12a.
The other contact of each of the first switch 13A and the second switch 13B are respectively separately connected to the respective wires w _i connected each electrode E _i and electrically.
Thus, electrodes _E 1, ..., the _{E n,} wires _w 1, ..., via the _{w n,} the first power source 11 is provided to be electrically connected to the anode of the second power supply 12.
As shown in FIG. 4, the switch unit 13 is electrically connected to the film formation control unit 50. Based on the control signal from the film formation control unit 50, the first switch 13A and the second switch 13B are turned on / off. The off state is controlled.

The film formation control unit 50 controls the film formation operation in the sputtering apparatus 1, and includes a storage unit 53, a condition setting unit 54, an object movement control unit 51, and an output control unit 52 as shown in FIG. Prepare.
In addition, in order to perform an operation input to the film formation control unit 50 by which an operator inputs a film formation condition or selects a control condition stored in the storage unit 53, for example, an input pad, a keyboard, a mouse, etc. The operation input part 20 which consists of is provided.

The storage unit 53 stores information on various control conditions in the film forming operation.
Information on the control conditions stored in advance in the storage unit 53 includes information on the film configuration to be formed on the workpiece W, control information on the movement position of the workpiece W according to the film configuration, and each target piece T _i. the shape and material of the information, the information of the correlation between the power and the deposition rate to be supplied to each target strip T _i, such as information of the corresponding relation between the installation position of the moving position and the target piece T _i of the workpiece W Can be mentioned.

The condition setting unit 54 is electrically connected to the operation input unit 20. For example, the condition setting unit 54 stores information such as a film forming condition input from the operation input unit 20 in the storage unit 53 or input from the operation input unit 20. Based on an operation input instruction, information stored in the storage unit 53 is referred to, and calculation processing is performed as necessary, so that information necessary for the operation of the object movement control unit 51 and the output control unit 52 is processed. This is sent to the body movement control unit 51 and the output control unit 52.
For example, if an instruction to form the thin film 15A or the thin film 15B is input by the operation input unit 20, such a film configuration is searched in the storage unit 53, and the workpiece W corresponding to the input film configuration is searched. The control information of the movement position is read from the storage unit 53, and control data such as the start position, the stop position, and the movement speed is sent to the object movement control unit 51. Also, information on the power to be supplied to the target pieces T ₁ ,..., T _n is sent to the output control unit 52 corresponding to this film configuration.
In addition, the condition setting unit 54 starts the control operations of the object movement control unit 51 and the output control unit 52 in response to an instruction to start film formation from the operation input unit 20.

The object movement control unit 51 sends a control signal to the object movement unit 9 based on the control information of the movement position of the object W sent from the condition setting unit 54, thereby moving the object movement. The unit 9 is activated, stopped, and controlled in moving speed, and is connected to the workpiece moving unit 9 so as to be communicable.
The object movement control unit 51 is electrically connected to the output control unit 52, and sends information on the movement position of the object movement unit 9 notified from the object movement unit 9 to the output control unit 52. It can be done.

The output control unit 52, a target piece T ₁ sent out from the condition setting unit _54, ..., and the power of the information to be supplied to T _n, the notification from the workpiece moving unit 9 through the workpiece movement control unit 51 based on the has been moved position of the workpiece W, the first power source 11, the output power of the second source 12, by performing the switching by the switch section 13, the electrode E _1, ..., at least one of E _n The control to selectively supply to is performed. Further, when the output power of the first power supply 11 and the second power supply 12 can be varied, the output power is also controlled.
Therefore, the output control unit 52 is electrically connected to the condition setting unit 54, the switch unit 13, the first power supply 11, and the second power supply 12, and the control signal from the condition setting unit 54 and the object moving unit 9 are processed. The operation of the switch unit 13, the first power supply 11, and the second power supply 12 can be controlled based on the upper position of the movement from

  In this embodiment, the apparatus configuration of the film formation control unit 50 includes a computer including a CPU, a memory, an input / output interface, an external storage device, and the like, thereby executing a control program corresponding to the control function as described above. It is like that.

With such a configuration, the film formation control unit 50 uses the electrode E ₁ based on information on the movement position of the workpiece W and information on a film configuration selected from a plurality of film configurations stored in advance. ,..., E _n is configured to selectively supply power to at least one of the target pieces T ₁ ,..., T _n to selectively release target particles. ing.

Next, the operation of the sputtering apparatus 1 will be described focusing on the film forming method of the present embodiment.
FIG. 6A is an operation explanatory view for explaining the operation of the film forming apparatus according to the embodiment of the present invention. FIG.6 (b) is BB sectional drawing in Fig.6 (a).

In order to form the thin film 15 </ b> A on the workpiece W using the sputtering apparatus 1, the target unit 8 is installed on the backing plate 7 in advance.
For this reason, in the inside of the vacuum vessel 2, while installing on the common part electrode electrically connected to the cathode of the several power supply which can set output of several target pieces independently, either of several target pieces A configuration has been realized in which a plurality of electrodes are provided which are arranged in the vicinity of the power source and are provided so as to be electrically connectable to the anode of the power source.

Next, the sputtering apparatus 1 is initialized.
First, in a state where the gate valves 3b and 4b are closed, the internal atmosphere of the vacuum vessel 2 is sucked from the suction pipe line 2b by a decompression unit (not shown) to decompress the inside of the vacuum vessel 2. And Ar gas is supplied from the inert gas supply pipe line 2a, and the degree of vacuum in the vacuum vessel 2 is adjusted to 1 × 10 ⁻² Pa.
Further, by instructing initialization from the operation input unit 20, a control signal is sent from the film formation control unit 50, and the workpiece moving unit 9, the switch unit 13, the first power supply 11, and the second power supply 12 are in the initial state. Reset to. That is, the object moving unit 9 is moved to the vicinity of the gate valve 3b in the vacuum vessel 2, the first switch 13A and the second switch 13B of the switch unit 13 are all set to OFF, the first power supply 11, the second switch The power supply 12 waits for output.

Next, with the gate valve 3b closed, the charging chamber 3 is brought to atmospheric pressure and the gate valve 3a is opened. Then, the object to be processed W is loaded into the loading chamber 3 from an opening (not shown) opened by the gate valve 3a using appropriate loading means, and is placed on the mounting table 3c (the processing target in FIG. 1). reference body _{W C).} Thereafter, the gate valve 3a is closed, and the charging chamber 3 is decompressed by decompression means (not shown).

When the decompression of the charging chamber 3 is completed, the gate valve 3b is opened. Then, the workpiece W on the mounting table 3c is gripped by the transfer robot 3d, and the workpiece W is moved into the vacuum container 2 through an opening (not shown) opened by the gate valve 3b. The body moving unit 9 is positioned at a position where it can be gripped.
The operator inputs an operation to the operation input unit 20 and causes the workpiece moving unit 9 to hold the workpiece W. Thus, as shown as an object to be processed W _B in FIG. 1, the workpiece W is delivered to the workpiece moving unit 9. Therefore, the transfer robot 3d is retracted into the loading chamber 3, and the gate valve 3b is closed.

Next, when the operator inputs an instruction to start film formation of the thin film 15 </ b> A from the operation input unit 20, film formation is automatically started based on the control of the film formation control unit 50.
The thickness of the thin film 15A has a moving speed of the workpiece W, the electrode _E 1, ..., varies with the power supplied to _{E n.} In the present embodiment, keeping the moving speed and the output power constant, it is described in example in obtaining desired film thickness with the number of the target piece T _i contribute to the film formation.

First, the condition setting unit 54 searches the storage unit 53 for such a film configuration, reads out the control information of the movement position of the workpiece W corresponding to the film configuration of the thin film 15A from the storage unit 53, and starts the activation position. Then, specific control data of the object moving unit 9 such as the stop position and the moving speed is calculated, and these control data are sent to the object movement control unit 51.
In the present embodiment, when forming a thin film 15A is the contribution of the target piece _T 1 through T ₅ and the target piece _T 11 _{through T 23,} when forming a thin film 15B, the target piece _T 6 ~ the contribution of the T ₁₀ and the target strip _T 24 _{through T 36,} is deposited, respectively. In either case, information such as moving sequentially without stopping on the target pieces T _{1 to} T ₃₆ is stored as the control information of the movement position.
However, when a film is formed to stop the workpiece W on a particular target piece T _i it is also stored information for the stop position.

Here, the calculation method of the control data of the to-be-processed object moving part 9 sent to the to-be-processed object movement control part 51 is demonstrated.
First, the case of forming a thin film 15A, the condition setting unit 54, and the film structure of the information storage section 53 in the stored film 15A, information of the shape and material of the target piece T _i contribute to the formation of the thin film 15A And the film formation process of the Si film layer L _A1 and the DLC film layer L _A2 are interpreted as follows from the movement position control information.
First, while the workpiece W moves at a constant moving speed v _A1 on a moving path of 75 mm (= 15 (mm) × 5) from the target pieces T _{1 to} T ₅ , the target pieces T _{1 to} T ₅ respectively by performing the film formation of each film thickness 60nm by the target particles Si emitted from forming the Si layer _{L A1} having a thickness of 300 nm.
Next, while the workpiece W moves at a constant moving speed v _A2 on a movement path of 195 mm (= 15 (mm) × 13) from the target pieces T _{11 to} T ₂₃ , the target pieces T ₁₁ to respectively performing film formation of each film thickness 46.15nm by C of target particles emitted from the T _23, the formation of the DLC film layer _{L A2} having a thickness of 600 nm.
On the other hand, the storage unit 53, a Si target piece of such target piece _{T 1,} when the output power supplied to the electrodes _{E 1} and the like is 2 kW, the film formation rate becomes 40 nm / min, C such target piece _{T 11} the target strip, the output power supplied to the electrode E ₁₁ etc. when 2 kW, the information of the relationship between such an output voltage and the deposition rate of the film forming speed is 30.77nm / min are stored.
Therefore, the condition setting unit 54 sets the moving speed v _A1 of the workpiece W from the target pieces T _{1 to} T ₅ to 10 mm / min (= 75 × 40/300) and the target piece T based on these pieces of information. the moving speed _{v A2} of the object W to _{11 ~T 23, 10 (mm /} min) (= 195 × 30.77 / 600), calculated as.

The condition setting unit 54 uses the movement speeds v _A1 and v _A2 calculated in this way and the movement speed switching timing as control data for movement of the object movement unit 9 to be processed. To send. However, in this embodiment, since v _A1 = v _A2, it is not necessary to switch the moving speed.
The difference of the deposition rate depending on the type of the target piece T _i, but the moving speed v _A1, v _A2 calculated in this way may be different, in the present embodiment, as described above, the Si target piece, Considering the difference in film formation rate with the C target piece and the setting of the film thickness to be formed according to each, the number of Si target pieces and C target pieces constituting the target portion 8 is set to 5 and 13 respectively. Since the number of sheets is set, the moving speed of the workpiece W is v _A1 = v _A2 .

Also, when forming a thin film 15B, the condition setting unit 54, and the film structure of the information storage section 53 in the stored film 15B, information of the shape and material of the target piece T _i contribute to the formation of the thin film 15B If, from the control information of the mobile position, the step of forming the Cr film layer _L B1, Pt film layer _{L B2} interpreted in the same manner as described above, the formation of the Cr film layer _L B1, Pt film layer _{L B2} each contributes, electrode _{E 6,} etc., based on the deposition rate when the output power supplied to the electrodes _{E 24} etc. 2kW each, each 40 nm / min, the information to become 30.77nm / min, the target piece _T 6 ~ a moving velocity _{v B1} of the workpiece W up to T _10, calculates the moving velocity _{v B2} of the workpiece W to the target piece _T 24 _{through T 36,} as _{v B1 = v B2 = 10 (} mm / min) To do.

Further, the condition setting unit 54, the thin film 15A, in correspondence with the film structure 15B, and sends power information to be supplied to each target strip T _i to the output control section 52.
Here, the procedure for setting the power of the information to be supplied to each target strip T _i in this embodiment.
In this embodiment, film formation region by the target piece T _i, since the direction along the travel path is narrower than the outline of the object to be processed W in the same direction, the workpiece W moving on the moving route, mobile at most Only the target particles of two target pieces T _i and T _{i + 1} which are adjacent along the path adhere.
For this reason, the output power is applied to the electrode E _i installed outside the short side of the target piece T _i so that the target particles are emitted only from the target piece T _i in which the workpiece W enters the film formation region. be supplied, it is possible to maximize the use efficiency of each target strip T _i.
Therefore, when the distribution of the deposition region on the movement path of each target piece T _i are known, all of which correspond to the film formation region overlapping with the workpiece W in accordance with the movement position of the workpiece W It is only necessary to specify the target piece T _i , turn on the power of the electrode E _i corresponding thereto, and send control data of the switch unit 13 to turn off the power of the other electrode E _i to the output control unit 52.

However, the film formation area by sputtering, because there is some variation, when the workpiece W with a margin approaches the deposition region envisaged by the target piece T _i, and turn on the power of the corresponding electrode E _i Also good.
In the present embodiment, the size of deposition region along a travel path is close to the lateral direction of the width of the target strip T _i, with the workpiece W is moved in a region overlapping with the target piece T _i, the target piece T It is to be sent to the output control unit 52 controls data switch section 13 to turn on the power of the corresponding electrode E _i to _i.
Specifically, according to the movement position of the workpiece W, the first target piece T _{i on which} the workpiece W overlaps or the target pieces T _i and T _{i + 1 on} which the workpiece W overlap overlap _each other. Control data for supplying power from the power supply 11 or the second power supply 12 is output.
Note that the subscript i of the target piece T _i overlapping the workpiece W is when the odd turns on the first switch 13A, when an even number is set to ON the second switch 13B.

When control data from the condition setting unit 54 is sent to the object movement control unit 51 and the output control unit 52, film formation is started by the control of the object movement control unit 51 and the output control unit 52. Is done. Hereinafter, as an example, an example in which the thin film 15A is formed will be described.
The object movement control unit 51 moves the object movement unit 9 toward the discharge chamber 4 at the speed v _A1 . Information on the movement position of the workpiece W is sequentially notified from the workpiece moving section 9 to the output control section 52.
The output control unit 52, based on the information of the movement position of the workpiece W to be notified from the workpiece movement unit 9, electrodes E ₁ corresponding to the target piece T _i contribute to the formation of the thin film _15A, ..., On / off control of the switch unit 13 is performed so as to selectively supply power to at least one of E ₅ , E ₁₁ ,..., E ₂₃ .
Specifically, the workpiece W is, when moving to the region overlapping the target piece T _1, the first switch 13A connected to the electrode E ₁ is turned on. Thus, the power of 2kW is supplied only to the electrode _{E 1.}
Article W to be _treated, v to move A1 = 10 (mm / min) , 1 minute 30 seconds after starting overlaps the target piece _{T 1} the tip of the moving direction of the workpiece W, the entire workpiece W There overlaps the target piece T _1, the moving direction of the distal end of the workpiece W reaches the boundary between the target piece T ₂ simultaneously. Therefore, if such a movement position is notified from the workpiece movement unit 9, a second switch 13B connected to the electrode E ₂ is turned on. As a result, 2 kW of power is supplied to both the electrodes E ₁ and E ₂ .
Further, after 3 minutes from the start overlap in the direction of movement of the tip is the target piece T ₁ of the article W to be treated, the workpiece W is finish across the target piece T _1, the moving direction of the distal end of the workpiece W to reach the target piece T ₃ and the boundary. Therefore, if such a movement position of the workpiece moving unit 9 is notified, the first switch 13A connected to the electrode E ₁ is turned off, the first switch 13A is turned on, which is connected to the electrode E ₃ The As a result, 2 kW of power is supplied to both electrodes E ₂ and E ₃ .
In this way, according to the movement position of the workpiece W, the electrode _{E 1, ..., E 5,} E 11, ..., electrodes _{E i} to which power is supplied is gradually being sequentially switched at _{E 23.}

Here, the film forming operation by the electrode E _i supplied with electric power will be described.
For example, when 2 kW of power is supplied to the electrode E ₁ , the target piece T ₁ is held at the same potential as the backing plate 7 connected to the cathodes of the first power source 11 and the second power source 12. (a), the current 16 flows through the space discharge between the electrodes E ₁ and the target piece T _1, electrons Ar is ionized by flowing. And by these Ar ions collide with the target piece T _1, the target piece T ₁ is is sputtered.
On the target piece T ₁ , an arcuate magnetic field 14 is formed from both ends of the target piece T ₁ toward the center by the action of the magnet unit 6. Therefore, the electron density due to the current 16 is higher in the middle portion of the two positions of the longitudinal ends and the center of the target piece T _1. Because Ar ions to concentrate on these electronic dense region, a target piece T ₁ is sputtered around the intermediate portion of the two positions of the longitudinal ends and the center.

At this time, film formation region S ₁ of the target piece T ₁ is FIG. 6 (a), the a as indicated by broken line arrows (b), the area extending to these two locations each cone upward from an intermediate portion of Become. Therefore, the predetermined distance of the position above the target piece T _1, the film formation region S ₁ is partially overlapped by adjacent deposition region extending in the longitudinal direction of the target piece T ₁ is formed.
Accordingly, as shown in FIG. 6 (a), by setting the distance h ₂ between the workpiece W and the target piece T ₁ of the surface properly, the magnitude of the longitudinal film formation region of the target piece T ₁ When slightly larger than the outer shape of the object to be processed W, a film formation region narrower than the outer shape of the object to be processed W is formed in a direction orthogonal to the outer shape as shown in FIG.

When the tip of the workpiece W reaches above the boundary between the target pieces T ₁ and T ₂ , ₂ kW of power is simultaneously supplied to the electrodes E ₁ and E ₂ . Then, the discharged current from the electrode _E 1 _{(E 2)} flows to the target piece _T 1 _{(T 2),} further flows to the target piece _T 1 _{(T 2)} backing plate 7 for holding. The current that flows to the backing plate 7 returns to the first power supply 11 (second power supply 12) via the cathode wiring 11b (12b).
At this time, the backing plate 7 is a shared part of the electric circuit on the cathode side of the first power supply 11 and the second power supply 12, and currents supplied from the first power supply 11 and the second power supply 12 flow simultaneously. The magnitude of these currents is the sum of the currents flowing from the anodes of the first power supply 11 and the second power supply 12, and the amount of current collected by the first power supply 11 and the second power supply 12 via the cathode wirings 11b and 12b. Are also the same as the current output from the anode. Therefore, by adjusting the amount of current supplied from the anodes of the first power supply 11 and the second power supply 12 by the first power supply 11 and the second power supply 12 that can set the output power independently, the electrode E ₁ and the target piece T ₁ The amount of discharge current between them and the amount of discharge current between electrodes E ₂ and target pieces T ₂ can be controlled independently.

In this way, the workpiece W is in the movement path across the target piece T ₁ through T _5, film formation region S ₁ and the like are sequentially Si atom by the target piece T ₁ through T ₅ from the lower surface side is released Are sequentially traversed. However, when the tip of the workpiece W reaches the boundary between the target pieces T ₅ and T ₆ , the output control unit 52 controls the switch unit 13 to turn off the second switch 13B connected to the electrode E _6. while the workpiece W passes through the target piece _T 6 _{through T 10} is the first switch 13A which is connected to the electrode _E 6 _{to E 10,} the second switch 13B are all turned off. For this reason, Cr atoms are not released from the target pieces T _{6 to} T _{10 with} respect to the workpiece W.
Therefore, deposition of Si atoms according to their deposition rate in deposition region S ₁ and the like, deposited by a thin film of amorphous of Si is formed, the film thickness at the time of passing through the target piece T ₅ A Si film layer _LA1 having a thickness of 300 nm is formed.

Similarly, the workpiece W is in the movement path across the target piece _T 11 _{through T 23,} the deposition region sequentially sequentially C atoms by the target piece _T 11 _{through T 23} from the lower surface side is released for traversing, each formed adheres C atoms in accordance with the deposition rate in the film region, deposited by a thin film of amorphous of C is formed, at the time of passing through the target piece T _23, Si layer L _A1 DLC film layer _{L A2} have a film thickness 600nm is deposited on.

Workpiece W is, passes through the target piece _{T 23,} the output control unit 52 controls the switch section 13, the first switch 13A which is connected to the electrode _E 25 _{to E 36,} all the second switch 13B OFF And the supply of power from the first power supply 11 and the second power supply 12 is stopped. For this reason, Pt atoms are not emitted from the target pieces T _{24 to} T _{36 with} respect to the workpiece W.
In addition, the workpiece movement control unit 51 stops the workpiece moving unit 9 after moving the workpiece moving unit 9 to a position near the gate valve 4b of the discharge chamber 4.

Next, the gate valve 4b of the discharge chamber 4 that has been depressurized in advance is opened, the object W to be processed is gripped by the transfer robot 4d, and the transfer robot 4d is driven to process the object. The body W is moved into the discharge chamber 4. In this state, the gate valve 4b is closed and the transfer robot 4d is driven to place the workpiece W on the mounting table 4c, and then the gripping of the transfer robot 4d is released (the workpiece to be processed in FIG. 1). see W _A).
On the other hand, the workpiece movement control unit 51 releases the holding of the workpiece moving unit 9 and moves the workpiece moving unit 9 to a position near the loading chamber 3. This makes it possible to hold the object to be processed W on which film formation is performed next.

Next, the operator opens the gate valve 4a to bring the discharge chamber 4 to atmospheric pressure, inserts a discharge means (not shown) into an opening (not shown) opened by the gate valve 4a, and the film formation is completed. discharging the workpiece W _a to the outside of the sputtering apparatus 1.
Thus, the to-be-processed object W in which the thin film 15A was formed is manufactured.
Also, when an instruction for forming a thin film 15B from the operation input unit 20 is performed, when the workpiece W is moved on the target piece _{T 6 ~T 10, T 24 ~T} 36, the workpiece W The thin film 15B is formed only in that power is supplied to the electrode E _i corresponding to one or two target pieces T _i below.
By repeating the above, a plurality of objects to be processed W are sequentially introduced into the input chamber 3, the thin film 15 </ b> A or the thin film 15 </ b> B is formed in the vacuum container 2, and then discharged from the discharge chamber 4. It is possible to form predetermined thin films 15A and 15B for each object to be processed W without opening 2 to the atmosphere.

As described above, according to the film forming method of the present embodiment using the sputtering apparatus 1, the object to be processed W is moved along the movement path that traverses the target pieces T _{1 to} T ₃₆ . Based on the movement position, the target particles are selectively discharged from _{one of} the target pieces T _{1 to} T _{36 at} the position where the workpiece W overlaps or two adjacent target pieces T _i to form a film. It can be carried out. For this reason, since the discharge | release of the target particle from the target piece which does not have the possibility of adhering to the to-be-processed object W can be suppressed, the use efficiency of the target part 8 can be improved.
Further, in the present embodiment, and the kind of target pieces T _i in the target portion 8, the number, it is possible to perform film formation simply by setting in advance according to the film configuration of forming. For this reason, film formation can be performed without complicatedly changing the moving speed of the workpiece W and the output power of the first power source 11 and the second power source 12 according to the film configuration. It is easy to adjust the thickness.
Therefore, the film formation efficiency can be improved in the thin film formation process.

  In the present embodiment, since the target piece Ti is made of a plurality of materials corresponding to a plurality of film configurations, the switch unit 13 is provided even when the film configuration of the film formation is changed. By simply changing the control data to be controlled, film formation can be continued continuously without changing the target such as changing the target. For this reason, compared with the case where a target is replaced whenever it changes a film | membrane structure, the film-forming efficiency can be improved.

Further, in the present embodiment, by providing the input chamber 3 and the discharge chamber 4 adjacent to the vacuum vessel 2, a plurality of objects to be processed W are continuously provided one by one without changing the atmosphere of the vacuum vessel 2. A film can be formed.
For this reason, compared with the case where batch-type film formation is performed by packing a plurality of objects to be processed W in a jig such as Yatoi, the trouble of filling the objects W to be processed or the vacuum container 2 when changing the batch Since work time such as decompression and standby time can be reduced, production efficiency can be improved.
Moreover, since the vacuum vessel 2 should just be able to move to-be-processed object one by one linearly, the cross-sectional area along the movement path | route of the vacuum vessel 2 can be reduced.

[First Modification]
Next, a first modification of the present embodiment will be described.
FIG. 7 is a schematic cross-sectional view showing a configuration of a main part of a film forming apparatus according to a first modification of the embodiment of the present invention. FIG. 8 is a schematic cross-sectional view showing an example of a film configuration of a thin film formed by the film forming apparatus according to the first modification of the embodiment of the present invention.

As shown in FIG. 7, the sputtering apparatus 1 </ b> A (film forming apparatus) of this modification includes a target unit 8 </ b> A (target) instead of the target unit 8 of the sputtering apparatus 1 of the above embodiment, between the electrodes E ₅ and the electrode E ₆ of the above embodiments, the target portion 8A in between the N pairs of electrodes facing in the lateral direction of the target portion 8A E _{Aj (although,} j the following 1 or more N Integer, N is an odd number of 3 or more).
Sputtering apparatus 1A, the thin film 15A in the above embodiment, in addition to 15B, as shown in FIG. 8, between the Si layer _{L A1} and the DLC film layer _{L A2,} having a composition Si and C are mixed film 15C having a mixed layer _{L A3} is a device for forming a.
Hereinafter, a description will be given focusing on differences from the above embodiment.

Target section 8A includes a target piece T ₅ of the above embodiment, between the target piece T _6, a short side × long side, c × b (However, c <a, c <D ) a rectangular shape N target pieces _TAj are arranged such that their long sides are adjacent to each other. Therefore, the width in the direction along the short side of the target piece T _Aj is narrower than the target piece T _i.
The material of the target piece _TAj is composed of Si when j is an even number and C when j is an odd number. Therefore, the material of the target piece _{T A1} adjacent to the target piece _{T 10} is made of Si, the material of the target piece _{T AN} adjacent target pieces _{T 11} is made of C.
Number N of the target piece T _Aj is set to the number of appropriate according to the thickness of the mixed layer L _A3 to be deposited.

As shown in FIG. 7, the length c of the short side of the target piece T _Aj is such that the cone-shaped film-forming region S _Aj extending on the target piece T _Aj extends from the surface of the target piece T _Aj to the workpiece W. At a distance h ₂ , the dimension is set so as to overlap to a substantially central position of the film formation region S _{A (j + 1)} of the target piece TA _{A (j + 1)} adjacent to the target piece _TAj .

The electrode E _Aj is obtained by reducing the width of the electrode E _i facing the target piece T _i of the above embodiment in accordance with the short side dimension of the target piece T _Aj facing the electrode E _Aj .
Although not particularly illustrated, the number of the first switch 13A and the second switch 13B of the switch unit 13 is increased by N, and each electrode E _Aj is connected to the wiring w _{i in the same} manner as the electrode E _{i in the} above embodiment. Are connected to the first switch 13A and the second switch 13B which are electrically connected to the anode wirings 11a and 12a.

In the sputtering apparatus 1A having such a configuration, in the same manner as in the above embodiment, the target piece T _{1 to} T ₅ , the target piece T _{A1 to} T _AN , the target Film formation is performed while traversing above the pieces T _{11 to} T ₂₃ along a movement path separated by a distance h ₂ .
Therefore, similarly to the above embodiment, on the target piece _T 1 through T _5, Si film layer _{L A1} is, DLC film layer _{L A2} is deposited in on the target piece _T 11 _{through T 23.}

On the other hand, when the workpiece W moves above the target pieces T _{A1 to} T _AN , the width c in the short direction of the target piece T _Aj is smaller than the outer shape D of the workpiece W. In the movement, power is supplied to two or more adjacent target pieces.
For this reason, Si atoms and C atoms are sputtered on the lower surface of the workpiece W from the target pieces T _Aj and T _{A (j + 1)} according to the oddity of _j . In addition, since the film formation regions S _Aj and S _{A (j + 1) of} these target particles overlap at the passing position of the workpiece W, the mixture of Si atoms and C atoms is mixed in the workpiece W. A film layer _LA3 is formed.

The mixed film layer L _A3 can improve the adhesion strength at the interface between the Si film layer L _A1 and the DLC film layer L _A2, and thus can improve the adhesion and durability of the thin film 15C.
Such mixed film layer L _A3 may be a film-forming method of the above embodiment, by inserting the target piece is constituted by SiC alloy between the target strip T _5, T _6, can be formed However, according to this modification, since the mixed film layer _LA3 can be formed without manufacturing such a target piece of SiC alloy, the preparation process of film formation is simplified.
Further, it is possible to easily form a mixed film of two kinds of materials that are difficult to produce an alloy.

When forming the thin films 15A and 15B in the sputtering apparatus 1A, the first switch 13A and the second switch 13B connected to the electrode E _Aj are moved while the workpiece W moves on the target piece T _Aj. Just turn it off.

[Second Modification]
Next, a second modification of the present embodiment will be described.
FIG. 9 is a schematic cross-sectional view showing a configuration of a main part of a film forming apparatus according to a second modification of the embodiment of the present invention.

The sputtering apparatus 1B (film forming apparatus) of this modification is a modification for forming the thin film 15C shown in FIG. As shown in FIG. 9, the configuration of the main part of the sputtering apparatus 1 </ b> B includes a target unit 8 </ b> B (target) instead of the target unit 8 of the sputtering apparatus 1 of the above embodiment, and the electrode E ₅ and the electrode of the above embodiment. A pair of electrodes E _Bk having the same configuration as that of the electrode E _j between the E ₆ and facing the short direction of the target portion 8B with the target portion 8B interposed therebetween (where k is 1 or more M The following integer) is added.
Hereinafter, a description will be given focusing on differences from the above embodiment.

The target portion 8B includes a target piece T _ak and a target piece T having a rectangular shape of short side × long side (a / 2) × b between the target piece T ₅ and the target piece T ₆ of the above embodiment. _bk are alternately arranged such that their long sides are adjacent to each other. The number of target pieces T _ak and T _bk is M corresponding to each pair of electrodes _EBk .
The target piece T _ak is made of Si, and the target piece T _bk is made of C.
Each number M of the target pieces T _ak and T _bk is set to an appropriate number according to the film thickness of the mixed film layer L ₃ to be formed.

In the sputtering apparatus 1B, although not particularly illustrated, the number of the first switch 13A and the second switch 13B of the switch unit 13 is increased by M, and each electrode E _Bk is the same as the electrode E _i of the above embodiment. Similarly, via individual wiring corresponding to the wiring _{w i,} the anode wire 11a, the first switch 13A which is electrically connected to 12a, is connected to the second switch 13B.

In the sputtering apparatus 1B of the present modification, the target pieces T _ak and T _bk are arranged in one set, and the electrodes E _Bk are arranged in a positional relationship sandwiching them from the respective short sides.
For this reason, when power is supplied to the electrode _EBk , as shown in FIG. 9, the target pieces _Tak and _Tbk are simultaneously sputtered in the sputtering regions near the adjacent long sides, and the film formation region _SBk. In this case, Si atoms and C atoms are released simultaneously.

The ratio of the emission amounts of Si atoms and C atoms depends on the distribution of the sputtering region with respect to the long side serving as the boundary between the target pieces T _ak and T _bk . In this modification, since the short side dimensions of the target pieces T _ak and T _bk are set to a / 2, the sputtering region is formed substantially symmetrically with the boundary as the center, so that the emission amount of Si atoms and C atoms The ratio is approximately 1: 1.
Thus, the target particles emitted from the target pieces T _ak and T _bk cannot be controlled independently by the power supplied to the electrode _EBk . For this reason, in this modification, the condition setting unit 54 considers that the target pieces T _ak and T _bk constitute one target piece corresponding to the electrode E _Bk , and turns on / off the switch unit 13. Set off control.
That is, when the workpiece W moves to a position overlapping the target piece _Tak or the target piece _Tbk , control data for turning on the first switch 13A or the second switch 13B connected to the electrode _EBk is output to the output control unit. 52.

In the sputtering apparatus 1B having such a configuration, in the same manner as in the above-described embodiment, the target piece T _{1 to} T ₅ , the target pieces T _a1 , T _b1,. , T _aM , T _bM , and film formation while traversing above the target pieces T _{6 to} T ₃₆ along a movement path separated by a distance h ₂ .
Therefore, similarly to the above embodiment, on the target piece _T 1 through T _5, Si film layer _{L A1} is, DLC film layer _{L A2} is deposited in on the target piece _T 11 _{through T 23.}

On the other hand, when the workpiece W moves above the target pieces T _a1 , T _b1 ,..., T _aM , T _bM , the workpiece W moves to a position overlapping the target piece T _ak or the target piece T _bk. the first switch 13A and the second switch 13B connected to the electrode _{E Bk} is turned on. Therefore, the target piece T _ak and the target piece T _bk are sputtered simultaneously according to the movement position of the workpiece W, and Si atoms and C atoms are released simultaneously in the film formation region S _Bk . Therefore, a mixed film layer _{LA3 in} which Si atoms and C atoms are mixed is formed on the workpiece W.

According to the present modification, the mixed film layer _LA3 can be formed without manufacturing a SiC alloy target piece, as in the first modification, so that the film forming preparation process is simplified.
Further, it is possible to easily form a mixed film of two kinds of materials that are difficult to produce an alloy.

When forming the thin films 15A and 15B in the sputtering apparatus 1B, the first switch 13A and the second switch connected to the electrode E _Bj while the workpiece W moves on the target pieces _Tak and _Tbk . All the switches 13B may be turned off.

[Third Modification]
Next, a third modification of the present embodiment will be described.
FIGS. 10A and 10B are a schematic front view and a plan view showing a schematic configuration of a film forming apparatus according to a third modification of the embodiment of the present invention.

As shown in FIGS. 10A and 10B, the sputtering apparatus 1 </ b> C (film forming apparatus) of the present modification is replaced with a moving guide 10 </ b> A instead of the moving guide 10 and the switch unit 13 of the sputtering apparatus 1 of the above embodiment. The first power supply 21 and the second power supply 22 having the same configuration as the first power supply 11 and the second power supply 12 are added, and the number of the object moving parts 9 is made plural. .
Hereinafter, a description will be given focusing on differences from the above embodiment.

The movement guide 10A has a shape in a plan view that draws a closed path of a substantially rectangular frame shape including a straight path 10a that traverses the target section 8 in the longitudinal direction of the target section 8 and a straight path 10b parallel to the straight path 10a. Is formed. Linear path 10b, as workpiece moving unit 9 which moves along a linear path 10b is separated reliably from the deposition region according to each target strip T _i, in plan view, the target portion 8 and the electrodes E _i It is detoured to a position that does not overlap.
Two object moving parts 9 can move simultaneously on the straight path 10a.

Switch 23, the first power source 11, the second power source 12, the first power source 21, and the output power of the second source 22, respectively electrodes _E 1, ..., for selectively applying to one of _{E n} It is a selection means.
In addition to the first switch 13A and the second switch 13B of the above embodiment, the switch unit 23 has a first switch 23A for turning on / off a direct current from the first power supply 21 and a direct current from the second power supply 22. Are provided with n switch units 23a having second switches 23B for turning on and off.
One contact of each first switch 23A is electrically connected to the anode of the first power supply 21 via the anode wiring 21a. One contact of each second switch 23B is electrically connected to the anode of the second power source 22 via the anode wiring 22a.
The other contact of each of the first switch 23A and the second switch 23B, the electrodes _E 1, ..., _{E n} and electrically connected to the wiring _w 1, ..., respectively _{w n} are individually connected .
As shown in FIG. 4, the switch unit 23 is electrically connected to the film formation control unit 50. Based on the control signal from the film formation control unit 50, each of the first switches 13A, 23A, each of the second switches 13B, The ON / OFF state of 23B can be controlled.

According to the sputtering apparatus 1C, it is possible to simultaneously move the plurality of workpiece moving parts 9 along the movement guide 10A with a certain interval. For this reason, as shown in FIGS. 10A and 10B, the two object moving parts 9 can be moved simultaneously on the straight path 10a of the movement guide 10A.
Therefore, the film formation control unit 50 receives the notification of the movement position of each object moving unit 9 and receives the object W (the object to be processed shown in the figure) held in each object moving unit 9. W _b, with respect to _{W a),} similarly to the above embodiment, forming a thin film 15A or thin film 15B by sputtering a target piece _{T i} thereunder.
At that time, the first power source 11, second power supply 12, for example, used for the film formation target object _{W a,} the first power source 21, second power supply 22 is used for film formation target object _{W b.}
In this modification, since the first power supplies 11 and 21 and the second power supplies 12 and 22 can set the output power independently, the power can be supplied regardless of the on / off state of the switch unit 23. With the supplied electrode E _i , a constant film formation rate can be obtained. Therefore, in this modification, in accordance with the movement position of the workpiece W _a, W _b, respectively on one or two target pieces T _i, power is applied, in parallel in two places in the vacuum chamber 2 Then, sputtering can be performed.
However, actually whether concurrently to the sputtering at two positions takes place, the layout of the material of each target piece T _i of the target portion 8B, the workpiece W _a to move the vacuum vessel _2, W _b Depends on the distance between the two and the type of film formation.
The layout of the target piece _{T i} of this modification, for example, if the workpiece _W a, the spacing pitch of _{W b} was about 270 mm, irrespective of the film structure of the object to be processed _W a, _{W b,} moving At any position, film formation is performed simultaneously in two places.

  After the workpiece W is transferred to the discharge chamber 4, the workpiece moving unit 9 further moves on the movement guide 10A, moves to the vicinity of the charging chamber 3 through the straight path 10b, and a new workpiece. In order to form the processing body W, the processing object W is used to hold the processing object W introduced into the vacuum container 2 from the charging chamber 3.

  In this way, according to the sputtering apparatus 1 </ b> C, a plurality of objects to be processed W can be continuously formed by forming a plurality of objects to be processed W in parallel inside the vacuum vessel 2. For this reason, the utilization efficiency of the sputtering apparatus 1 </ b> C can be improved, and the film formation productivity can be improved.

  In the description of the above embodiment and each modification, the target piece material has been described as an example in which the thin film 15A has two types of Si and C, and the thin film 15B has two types of Cr and Pt. The thin film may be three or more types having different material configurations. The film configuration of one thin film is not limited to a two-layer configuration, and may be a single layer or three or more layers. Therefore, the type of material of the target piece Ti that contributes to the formation of one thin film is not limited to two types, and may be one type or three or more types.

  Further, in the description of the embodiment and each modification example, the film forming apparatus includes an input chamber and a discharge chamber. However, for example, the vacuum container is small and does not take much time for decompression. In this case, a batch-type film forming apparatus may be used in which the input chamber and the discharge chamber are deleted and the object to be processed is replaced after the vacuum container is opened to atmospheric pressure.

In the description of the third modification, the example in which two objects to be processed are moved on the target has been described. However, if the objects can be moved apart so as not to affect the film formation, The number of objects to be processed that simultaneously move on the target can be an appropriate number of two or more.
In this case, the number of power sources for supplying power to the electrodes for performing sputtering is increased according to the number of films to be formed.

Further, in the description of the above-described embodiment and each modified example, in order to reduce the number of installed power supplies, the power supplies are connected to all the electrodes via the switch unit, and power is supplied by switching the connection by the switch unit. Although the example in the case of selecting an electrode has been described, when the power supply can be increased, the electrodes may be divided into blocks, and a power supply may be assigned to each block so that the connection of the power supply is switched within the block.
Further, if the cathode is connected to the common electrode, different power sources may be connected to all electrode pairs serving as anodes, and control to turn on / off the output of the power source may be performed.

In the description of the first and second modifications described above, the target pieces and electrodes for forming the mixed layer L _A3, described in example when disposed between the target strip T _5, T ₆ but it may be disposed between the target piece _{T 10, T 11.}

In the description of the first and second modifications of the above described example of the case of forming a thin film 15C formed a mixed layer L _A3 between the Si layer L _A1 and the DLC film layer L _A2 However, an apparatus configuration that can form a mixed film layer in which Cr and Pt are mixed between the Cr film layer L _B1 and the Pt film layer L _B2 may be employed.

In the description of the embodiment and each modification, the output power of the plurality of power supplies is described as an example in which the output power is set to a constant value. However, the plurality of power supplies output in the range of 0% to 100%. The power may be adjusted independently, and the magnitude of the output power may be controlled by the film formation control unit. In this case, the discharge amount of the target particles can be changed by changing the power supplied to the electrodes connected to the plurality of power sources in accordance with the movement position of the object to be processed.
In this case, even if the moving speed of the object to be processed is constant, the film forming speed can be changed for each target piece, so that the film thickness can be changed more easily.

Further, in the description of the above embodiment and each modification, an example has been described in which power is supplied from one power source in which a switch is turned on to electrodes facing each other across the target. , Different power sources whose outputs can be set independently may be connected.
In this case, if the configuration is such that the output power of the power supply can be adjusted, the amount of target particles released from two locations of one target piece can be changed.

Further, in the description of the above-described embodiment and each modification, the target piece has been described as an example of a configuration that can be arranged differently along the moving direction of the object to be processed. However, as in the above-described embodiment, the sputtering region is the target. When formed in two places in the longitudinal direction of the piece, the material of the target piece may be changed for each sputtering region.
In this way, a mixed film can also be formed by performing sputtering simultaneously in a sputtering region where different kinds of materials are arranged.
Further, the composition ratio of the mixed film can be changed by allowing the output of the power source connected to the electrode contributing to the sputtering region to be adjusted independently.
Accordingly, if a plurality of such configurations are provided along the movement path and the composition ratio of the mixed film is changed along the movement direction, the graded layer can be formed stepwise.

  In the description of the above embodiment, the width of the film formation region is described as an example in which the moving direction of the object to be processed (the direction perpendicular to the longitudinal direction of the target piece) is narrower than the outer shape of the object to be processed. The width may be the same as the outer shape of the processing body, or may be a substantially equivalent width that is slightly larger than the outer shape.

Further, in the description of the above-described embodiment and each modification, the example in which the object to be processed moves at a constant speed without stopping on the plurality of target pieces has been described. However, the moving speed is changed on a specific target piece. Alternatively, the film may be formed by stopping or stopping. At that time, when film formation is stopped, the width of the film formation region in the moving direction is slightly larger than the outer shape of the object to be processed so that the entire surface of the object to be processed is formed.
For example, in the configuration of the first modification, if j = 2 and the output power supplied to the electrodes E _A1 and E _A2 can be adjusted independently in the range of 0% to 100%, the object W to be processed is the target. By simultaneously changing the output power of the electrode E _A1 from 100% to 0% and the output power of the electrode E _A2 from 0% to 100% while stopped on the boundary of the pieces T _A1 and T _A2 It is possible to form a graded layer in which the composition of Si gradually changes from 100% to 0% and the composition of C gradually changes from 0% to 100%.

  In the description of the first modification, when the mixed film is formed by changing the size of the electrode and the target piece to form an overlap of the film forming regions adjacent to the moving direction of the object to be processed. However, even if the size of the electrode and the target piece is the same as in the above embodiment, the distance between the surface of the target piece and the surface to be processed of the target object can be increased by increasing the distance of the film formation region. Overlap can be formed. Therefore, it is good also as a structure which can move a to-be-processed object up and down so that the distance from the surface of a target piece to the to-be-processed surface of a to-be-processed object may be increased in the path | route which forms a mixed film.

Moreover, although the said embodiment demonstrated the example in the case of film-forming using all the target pieces which contribute to film-forming for every film | membrane structure, you may thin out the target piece used for film-forming suitably.
Thus, without changing the configuration of the sputtering apparatus 1, the film thickness of the Si layer _{L A1} thin film and than 300nm is the film thickness of the DLC film layer _{L A2} can be formed thinner film than 600 nm.
Further, in the sputtering apparatus 1, the film thickness may be changed by changing the moving speed of the workpiece W, providing a stop time, or changing the output of the power source. In this case, a film configuration similar to that of the thin films 15A and 15B can be formed even if the target piece used for film formation is thinned out.

Further, in the above-described embodiment and each modification, the example in which a desired film thickness is obtained depending on the conditions of the apparatus setting has been described. However, in order to reduce the film thickness error, the target piece and the workpiece W The film forming amount detecting means for detecting the film thickness and the film forming speed, such as a crystal oscillator type film thickness monitor, is provided between the detection output and the movement speed of the workpiece W or the output. The film formation may be performed by feeding back to electric power or the like.
In this case, the film formation amount detection means may be moved together with the object to be processed W, or may be arranged in a film formation region on each target piece.

  In the description of the above embodiment and each modified example, an example in which a DC magnetron sputtering method classified as a DC sputtering method is employed has been described. However, target particles are placed on a target object from a target surface in a vacuum container. It can be applied to an appropriate film formation method for releasing. For example, the RF sputtering method, the vacuum vapor deposition method using an electron beam, and the like can be changed without departing from the spirit of the present invention.

Further, in the description of the above-described embodiment and each modified example, by using a target in which long sides of a plurality of rectangular target pieces are adjacent to each other and extended in one direction, the object to be processed is linearly formed on the target. As described in the example of moving, the shape of the target piece is not limited to a rectangular shape, and the movement path of the object to be processed is not limited to a linear shape.
For example, a target piece is formed in a long and narrow fan shape, and arranged in a curved shape such as an arc shape or an annular shape to constitute a target, and a movement path such as an arc, a circle, etc. crossing each target piece on the target is formed. It may be provided in a curved shape.

  Moreover, all the components described above can be implemented by being appropriately combined or deleted within the scope of the technical idea of the present invention.

1, 1A, 1B, 1C Sputtering equipment (film forming equipment)
2 Vacuum container 3 Input chamber 4 Discharge chamber 6 Magnet unit 7 Backing plate (common part electrode)
8, 8A, 8B Target part (target)
9 Processing object moving part 10, 10A Movement guide 11, 21 First power supply (power supply)
11a, 12a, 21a, 22a Anode wiring 11b, 12b, 21b, 22b Cathode wiring 12, 22 Second power supply (power supply)
13, 23 Switch unit 15A, 15B, 15C Thin film 50 Deposition control unit (deposition control unit)
51 target object movement control unit 52 output control unit 53 storage unit 54 condition setting unit E ₁ ,..., E ₃₅ , E _i , E _Aj , E _Bk electrode L _A1 Si film layer L _A2 DLC film layer L _A3 mixed film layer L _B1 Cr film layer L _B2 Pt film layer S ₁ , S _Aj , S _Bk film formation region T ₁ ,..., T ₃₅ , T _n , T _i , T _A1 , T _Aj , T _AN , T _a1 , T _ak , T _b1 , T _bk target piece W, W _A , W _B , W _C , W _a , W _b , W _c

Claims (8)

A film forming method for forming a thin film by releasing target particles from a target surface inside a vacuum vessel and attaching the target particles to the surface of an object to be processed,
The target is composed of a plurality of target pieces made of two or more kinds of materials according to a plurality of predetermined film configurations, and the plurality of target pieces are electrically connected to the cathodes of a plurality of power supplies that can be set to output independently. And a plurality of electrodes disposed in the vicinity of any one of the plurality of target pieces and provided so as to be electrically connectable to the anode of the power source, respectively.
Two or more of the objects to be processed are moved with a time difference along a movement path crossing the plurality of target pieces,
Power is selectively supplied to at least one of the plurality of electrodes based on the information on the film configuration formed on each of the objects to be processed and the information on the movement positions of the objects to be processed.
Selectively releasing target particles from any of the plurality of target pieces;
A film forming method, wherein the film structure corresponding to each of the objects to be processed is formed on each surface of the object to be processed. The two or more objects to be moved that are moved with a time difference along the movement path are simultaneously moved on the movement path, and film formation is performed in parallel at two or more locations on the movement path. The film forming method according to claim 1, wherein: A film having a film configuration different from that of the other objects to be processed among the two or more objects to be processed is formed on at least one of the objects to be processed of the two or more objects. The film forming method according to claim 2. When the object to be processed crosses different types of target pieces, the composition of the thin film is made continuous by changing at least one of the moving speed of the object to be processed and the magnitude of the output power of the power source. 3. The film forming method according to claim 1, wherein an inclined layer that changes to a thickness is formed. A film forming apparatus that has a vacuum vessel, releases target particles from the target surface inside the vacuum vessel, and adheres the target particles to the surface of the object to be processed to form a thin film,
Multiple power supplies with independently configurable output power,
According to a plurality of predetermined film configurations, consisting of two or more materials, a plurality of target pieces constituting the target,
A common electrode electrically connected to the cathodes of the plurality of electrodes and holding the plurality of target pieces;
A plurality of electrodes installed in the vicinity of the plurality of target pieces, and electrically connected to anodes of the plurality of power sources via individual wirings;
A workpiece moving unit that moves the workpiece by two or more with a time difference on a moving path that crosses the plurality of target pieces;
At least one of the plurality of electrodes based on the information on the movement position of each of the objects to be processed notified from the object moving unit and the information on the film configuration formed on each of the objects to be processed. A film formation control unit that selectively supplies power to at least one of the plurality of target pieces to selectively release target particles corresponding to each of the objects to be processed;
A film forming apparatus comprising: The plurality of power supplies can independently adjust output power in a range of 0% to 100%,
The film formation apparatus according to claim 5, wherein the film formation control unit can control the magnitude of the output power. The plurality of target pieces are each formed in a rectangular shape in plan view, and are installed on the common electrode so that their long sides are adjacent to each other,
The film forming apparatus according to claim 5, wherein the plurality of electrodes are arranged at positions facing each other with the target piece sandwiched from a short side. Adjacent to the vacuum vessel,
In a state where the same atmosphere as the vacuum container is formed, a charging chamber for charging the object to be processed into the vacuum container;
A discharge chamber for discharging the object to be processed, which has been formed, from the vacuum container in a state where the same atmosphere as the vacuum container is formed;
The film forming apparatus according to claim 5, wherein the film forming apparatus is provided.

Images