CN103668096B - Bar magnet, magnetic target and magnetron sputtering equipment - Google Patents

Bar magnet, magnetic target and magnetron sputtering equipment Download PDF

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CN103668096B
CN103668096B CN201310739712.0A CN201310739712A CN103668096B CN 103668096 B CN103668096 B CN 103668096B CN 201310739712 A CN201310739712 A CN 201310739712A CN 103668096 B CN103668096 B CN 103668096B
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bar magnet
bar
magnetron sputtering
magnetic
target
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CN103668096A (en
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李正亮
刘震
丁录科
孙冰
曹占锋
惠官宝
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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Abstract

本发明涉及磁控溅射技术领域,尤其涉及一种条形磁铁、磁靶及磁控溅射设备,所述条形磁铁在中间区域设有凸起结构。本发明提供的条形磁铁、靶材及磁控溅射设备,通过条形磁铁设有的凸起结构,在采用磁控溅射方式沉积薄膜过程中,为磁控溅射区域提供磁感应强度强弱分布均匀的磁场,确保沉积的薄膜厚度均匀。

The invention relates to the technical field of magnetron sputtering, in particular to a bar magnet, a magnetic target and magnetron sputtering equipment. The bar magnet is provided with a raised structure in the middle area. The strip magnet, the target material and the magnetron sputtering equipment provided by the present invention provide the magnetron sputtering area with a strong magnetic induction intensity during the process of depositing a film by magnetron sputtering through the raised structure provided by the strip magnet. Weak and evenly distributed magnetic field ensures uniform thickness of the deposited film.

Description

条形磁铁、磁靶及磁控溅射设备Bar magnets, magnetic targets and magnetron sputtering equipment

技术领域technical field

本发明涉及磁控溅射技术领域,尤其涉及一种条形磁铁、磁靶及磁控溅射设备。The invention relates to the technical field of magnetron sputtering, in particular to a bar magnet, a magnetic target and magnetron sputtering equipment.

背景技术Background technique

在磁控溅射过程中,为了得到较高的靶材原子沉积速率需要较高的起辉气体电离度,而得到较高的起辉气体电离度需要保证电子与起辉气体分子有足够大的碰撞几率,因此磁控溅射设备中采用附着磁靶来控制电子运动轨迹,使其运动轨迹呈螺旋状,如图1所示。In the process of magnetron sputtering, in order to obtain a higher target atom deposition rate, a higher degree of ionization of the starting gas is required, and to obtain a higher degree of ionization of the starting gas, it is necessary to ensure that the electrons and the molecules of the starting gas are sufficiently large. Therefore, the attached magnetic target is used in the magnetron sputtering equipment to control the trajectory of electrons, so that the trajectory is spiral, as shown in Figure 1.

电子在磁场中运动时,由于电子的运动速度与磁场方向存在一定夹角,电子受到洛伦磁力的作用下,呈圆周运动;又由于电场的作用,使得电子在电场线反方向上具有加速度,因此,电子在磁场和电场的共同作用下,螺旋前进,延长了运动路径,同时提高了电子与起辉气体分子的碰撞几率。When electrons move in a magnetic field, because there is a certain angle between the moving speed of electrons and the direction of the magnetic field, the electrons are under the action of the Loren magnetic force and move in a circle; and because of the action of the electric field, the electrons have acceleration in the opposite direction of the electric field lines, so , Under the combined action of the magnetic field and the electric field, the electrons spiral forward, prolonging the movement path, and at the same time increasing the collision probability between the electrons and the glowing gas molecules.

目前,磁靶大多采用固定的条形永磁铁来为溅射提供磁场。磁靶中的多个条形永磁铁并排固定在固定板上。磁控溅射设备,包括载台、设置在该载台上方的靶材、位于靶材上侧的背板以及设置背板上侧条形永磁铁。当通过该磁控溅射设备对放置在载台上的基板进行沉积时,由于条形永磁铁提供的磁场的磁感应强度在基板上分布不均匀,条形磁铁边缘区域的磁感应强度强于该磁铁中间区域的磁感应强度,造成沉积的薄膜厚度不均匀。根据方块电阻测量和沉积膜厚测量发现,沉积的薄膜具有中间薄,而靠近条形永磁铁的端部位置的薄膜较厚的缺陷。At present, most magnetic targets use fixed bar-shaped permanent magnets to provide magnetic fields for sputtering. A plurality of bar-shaped permanent magnets in the magnetic target are fixed side by side on the fixed plate. The magnetron sputtering equipment includes a stage, a target arranged above the stage, a back plate located on the upper side of the target, and a bar-shaped permanent magnet arranged on the upper side of the back plate. When the substrate placed on the stage is deposited by the magnetron sputtering equipment, since the magnetic induction intensity of the magnetic field provided by the bar-shaped permanent magnet is unevenly distributed on the substrate, the magnetic induction intensity of the edge area of the bar-shaped magnet is stronger than that of the magnet. The magnetic induction intensity in the middle area causes the thickness of the deposited film to be uneven. According to sheet resistance measurement and deposition film thickness measurement, it is found that the deposited film has the defect that the middle part is thin, and the film near the end of the bar-shaped permanent magnet is thicker.

为了解决以上问题,本发明做了有益改进。In order to solve the above problems, the present invention makes beneficial improvements.

发明内容Contents of the invention

(一)要解决的技术问题(1) Technical problems to be solved

本发明的目的是提供一种能够使磁控溅射区域磁场的磁感应强度分布更为均匀的一种条形磁铁、磁靶及磁控溅射设备。The object of the present invention is to provide a bar magnet, a magnetic target and a magnetron sputtering device that can make the magnetic induction intensity distribution of the magnetic field in the magnetron sputtering area more uniform.

(二)技术方案(2) Technical solutions

本发明是通过以下技术方案实现的:一种条形磁铁,所述条形磁铁在中间区域设有凸起结构。The present invention is achieved through the following technical solutions: a bar magnet, the bar magnet is provided with a protruding structure in the middle area.

其中,所述凸起结构为沿该条形磁铁长度方向设置在所述条形磁铁上的弯折结构。Wherein, the protruding structure is a bent structure arranged on the bar magnet along the length direction of the bar magnet.

优选地,所述弯折结构的弯折角度范围为165°~178°。Preferably, the bending angle of the bending structure ranges from 165° to 178°.

具体地,所述条形磁铁包括:Specifically, the bar magnet includes:

外围的S极和内部的N极;The outer S pole and the inner N pole;

或者,外围的N极和内部的S极。Or, the outer N pole and the inner S pole.

本发明还提供一种磁靶,包括固定板和设置在所述固定板上的如上所述的条形磁铁;所述条形磁铁的凸起结构朝向所述固定板凸起设置。The present invention also provides a magnetic target, comprising a fixed plate and the above-mentioned bar magnet disposed on the fixed plate; the protruding structure of the bar magnet is protrudingly arranged toward the fixed plate.

具体地,所述磁靶包括多个条形磁铁,所述多个条形磁铁包括间插排布的内部N极、外围S极的条形磁铁和内部S极、外围N极的条形磁铁。Specifically, the magnetic target includes a plurality of bar magnets, and the plurality of bar magnets include bar magnets with internal N poles and peripheral S poles and bar magnets with internal S poles and peripheral N poles. .

优选地,所述条形磁铁为永磁铁或电磁铁。Preferably, the bar magnet is a permanent magnet or an electromagnet.

进一步,所述固定板上设有滑轨,所述条形磁铁以能够在所述滑轨上移动的方式连接在该滑轨上。Further, a slide rail is provided on the fixed plate, and the bar magnet is connected to the slide rail in a manner capable of moving on the slide rail.

本发明还提供一种磁控溅射设备,包括靶材、背板和如上所述的磁靶,所述靶材设置在所述背板的一侧,所述磁靶设置在该背板的另一侧。The present invention also provides a magnetron sputtering device, including a target material, a back plate and the above-mentioned magnetic target, the target material is arranged on one side of the back plate, and the magnetic target is arranged on the back plate The other side.

进一步,还包括驱动装置,该驱动装置用于驱动所述条形磁铁沿预设驱动轨迹移动。Further, a driving device is also included, and the driving device is used to drive the bar magnet to move along a preset driving track.

(三)有益效果(3) Beneficial effects

与现有技术和产品相比,本发明有如下优点:Compared with prior art and product, the present invention has following advantage:

本发明提供的条形磁铁、靶材及磁控溅射设备,通过条形磁铁设有的凸起结构,在采用磁控溅射方式沉积薄膜过程中,为磁控溅射区域提供磁感应强度强弱分布均匀的磁场,确保沉积的薄膜厚度均匀。The bar magnet, target material and magnetron sputtering equipment provided by the present invention provide the magnetron sputtering area with a strong magnetic induction intensity during the process of depositing a film by magnetron sputtering through the raised structure provided by the bar magnet. Weak and evenly distributed magnetic field ensures uniform thickness of the deposited film.

附图说明Description of drawings

图1是现有技术中磁控溅射设备中电子运动轨迹示意图;Fig. 1 is a schematic diagram of electron motion trajectory in magnetron sputtering equipment in the prior art;

图2是本发明的一种条形磁铁的俯视图;Fig. 2 is the top view of a kind of bar magnet of the present invention;

图3是本发明的另一种条形磁铁的俯视图;Fig. 3 is the top view of another kind of bar magnet of the present invention;

图4是本发明的条形磁铁的侧视图;Fig. 4 is the side view of bar magnet of the present invention;

图5是本发明的磁靶的俯视结构图;Fig. 5 is the top structural view of the magnetic target of the present invention;

图6是本发明的磁靶的侧视结构图;Fig. 6 is a side view structure diagram of the magnetic target of the present invention;

图7是本发明的磁控溅射设备的结构图。Fig. 7 is a structural diagram of the magnetron sputtering device of the present invention.

附图中,各组件所代表的组件列表如下:In the accompanying drawings, the list of components represented by each component is as follows:

1-条形磁铁;11-内部N极、外围S极的条形磁铁;12-内部S极、外围N极的条形磁铁;3-固定板;4-磁靶;5-背板;6-靶材;7-基板;8-载台。1-bar magnet; 11-bar magnet with inner N pole and outer S pole; 12-bar magnet with inner S pole and outer N pole; 3-fixing plate; 4-magnetic target; 5-back plate; 6 - target; 7 - substrate; 8 - stage.

具体实施方式Detailed ways

下面结合附图对本发明的具体实施方式做一个详细的说明。The specific implementation manner of the present invention will be described in detail below in conjunction with the accompanying drawings.

本实施例提供一种安装在磁控溅射设备上的条形磁铁,如图2、图3和图4所示,该条形磁铁1的中间区域设有凸起结构。当对基板采用磁控溅射的方式沉积薄膜时,该条形磁铁1上的凸起结构朝向所述基板凸起设置,使条形磁铁的两端比条形磁铁中间区域远离所述基板,从而,条形磁铁两端位置提供的磁场强度变弱,克服现有直线型条形磁铁的靠近两端的边缘位置的磁场强度较强、中间区域磁场强度较弱的缺陷,在磁控溅射区域形成磁感应强度较为均匀的磁场。This embodiment provides a bar magnet installed on a magnetron sputtering device. As shown in FIG. 2 , FIG. 3 and FIG. 4 , the middle area of the bar magnet 1 is provided with a raised structure. When the film is deposited on the substrate by magnetron sputtering, the convex structure on the bar magnet 1 is protruded toward the substrate, so that the two ends of the bar magnet are farther away from the substrate than the middle area of the bar magnet. Thereby, the magnetic field intensity provided by the two ends of the bar magnet becomes weaker, overcomes the defect that the magnetic field intensity of the edge positions near the two ends of the existing linear bar magnet is stronger, and the magnetic field intensity in the middle area is weaker, and the magnetic field in the magnetron sputtering area A magnetic field with relatively uniform magnetic induction intensity is formed.

所述凸起结构可采用多种结构,例如弧形等弯曲结构,都能解决本发明的技术问题。本实施例优选采用一种凸起结构,该凸起结构为沿该条形磁铁长度方向设置在所述条形磁铁上的弯折结构。该弯折结构简单,易于制造。并且,该条形磁铁上的弯折结构的角度可根据沉积的薄膜的方块电阻以及薄膜的厚度等测量参数对条形磁铁的弯折角度进行调整,确保为磁控溅射区域提供磁感应强度均匀的磁场,并能在基板上溅射沉积形成厚度均匀的薄膜。The protruding structure can adopt various structures, such as curved structures such as arcs, all of which can solve the technical problem of the present invention. This embodiment preferably adopts a protruding structure, which is a bent structure arranged on the bar magnet along the length direction of the bar magnet. The bent structure is simple and easy to manufacture. Moreover, the angle of the bending structure on the bar magnet can be adjusted according to the measured parameters such as the sheet resistance of the deposited film and the thickness of the film to ensure uniform magnetic induction for the magnetron sputtering area. Magnetic field, and can sputter deposition on the substrate to form a uniform thickness of the film.

优选地,所述弯折结构的弯折角度范围为165°~178°。当弯折结构的弯折角度小于165°,会造成条形磁铁弯曲的角度过大,会使我们条形磁铁两端的边缘磁场减少过多,造成新的成膜不均一现象;当弯折结构的弯折角度大于178°,与直线形条形磁铁作用类似,起不到调整条形磁铁两端边缘部分磁场强度的作用。综上,优选165°-178°的角度范围作为本发明的弯折结构的弯折角度范围。Preferably, the bending angle of the bending structure ranges from 165° to 178°. When the bending angle of the bending structure is less than 165°, the bending angle of the bar magnet will be too large, which will reduce the edge magnetic field at both ends of our bar magnet too much, resulting in new film formation inhomogeneity; when the bending structure The bending angle is greater than 178°, which is similar to the effect of a linear bar magnet, and cannot adjust the magnetic field strength of the edge parts at both ends of the bar magnet. In summary, an angle range of 165°-178° is preferred as the bending angle range of the bending structure of the present invention.

具体地,所述条形磁铁1分为两种,一种为内部N极、外围S极的条形磁铁11;Specifically, the bar magnet 1 is divided into two types, one is a bar magnet 11 with an inner N pole and an outer S pole;

内部S极、外围N极的条形磁铁12;Bar magnet 12 with inner S pole and outer N pole;

优选地,所述条形磁铁1为永磁铁或电磁铁。Preferably, the bar magnet 1 is a permanent magnet or an electromagnet.

本实施例提供一种磁靶,如图5和图6所示,包括固定板3和设置在所述固定板3上的如上所述的条形磁铁1;所述条形磁铁1的凸起结构朝向所述固定板3凸起设置。所述条形磁铁1为一个或多个。当磁靶包括多个条形磁铁1,所述多个条形磁铁1包括间插排布的内部N极、外围S极的条形磁铁11和内部S极、外围N极的条形磁铁12。The present embodiment provides a magnetic target, as shown in Figure 5 and Figure 6, comprising a fixed plate 3 and the above-mentioned bar magnet 1 arranged on the fixed plate 3; the protrusion of the bar magnet 1 The structure protrudes towards said fixing plate 3 . There are one or more bar magnets 1 . When the magnetic target includes a plurality of bar magnets 1, the plurality of bar magnets 1 include bar magnets 11 with inner N poles and outer S poles and bar magnets 12 with inner S poles and outer N poles. .

进一步,所述固定板3上设有滑轨(图中未显示),所述条形磁铁以能够在所述滑轨上滑动的方式连接在该滑轨上。Further, a slide rail (not shown in the figure) is provided on the fixing plate 3 , and the bar magnet is connected to the slide rail in a manner capable of sliding on the slide rail.

本实施例还提供一种磁控溅射设备,如图7所示,包括靶材6、背板5和如上所述的磁靶4,所述靶材6设置在所述背板5的下侧,所述磁靶4设置在该背板5的上侧。载台8设置在靶材6的下方,载台8上侧放置用于沉积薄膜的基板7。所述条形磁铁1能够在滑轨上沿平行于靶材6的平面方向做往复运动,从而为磁控溅射区域提供磁场。This embodiment also provides a magnetron sputtering device, as shown in FIG. 7 , including a target 6, a back plate 5 and the above-mentioned magnetic target 4, and the target 6 is arranged under the back plate 5. The magnetic target 4 is arranged on the upper side of the back plate 5 . The stage 8 is arranged under the target 6 , and the substrate 7 for depositing a thin film is placed on the upper side of the stage 8 . The bar magnet 1 can reciprocate on the slide rail along the direction parallel to the plane of the target 6, so as to provide a magnetic field for the magnetron sputtering area.

进一步,所述磁控溅射设备还包括驱动装置,该驱动装置用于驱动所述条形磁铁沿预设驱动轨迹移动。Further, the magnetron sputtering equipment further includes a driving device, which is used to drive the bar magnet to move along a preset driving track.

以上实施方式仅用于说明本发明,而并非对本发明的限制,有关技术领域的普通技术人员,在不脱离本发明的精神和范围的情况下,还可以做出各种变化和变型,因此所有等同的技术方案也属于本发明的范畴,本发明的专利保护范围应由权利要求限定。The above embodiments are only used to illustrate the present invention, but not to limit the present invention. Those of ordinary skill in the relevant technical field can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, all Equivalent technical solutions also belong to the category of the present invention, and the scope of patent protection of the present invention should be defined by the claims.

Claims (10)

1.一种条形磁铁,其特征在于,所述条形磁铁在中间区域设有凸起结构,且通过凸起结构为磁控溅射区域提供磁感应强度强弱分布均匀的磁场。1. A bar magnet, characterized in that, the bar magnet is provided with a raised structure in the middle region, and provides a magnetic field with uniform distribution of magnetic induction intensity for the magnetron sputtering region by the raised structure. 2.根据权利要求1所述的条形磁铁,其特征在于,所述凸起结构为沿该条形磁铁长度方向设置在所述条形磁铁上的弯折结构。2. The bar magnet according to claim 1, wherein the protruding structure is a bent structure arranged on the bar magnet along the length direction of the bar magnet. 3.根据权利要求2所述的条形磁铁,其特征在于,所述弯折结构的弯折角度范围为165°~178°。3 . The bar magnet according to claim 2 , wherein the bending angle of the bending structure ranges from 165° to 178°. 4.根据权利要求1所述的条形磁铁,其特征在于,所述条形磁铁包括:4. The bar magnet according to claim 1, wherein the bar magnet comprises: 外围的S极和内部的N极;The outer S pole and the inner N pole; 或者,外围的N极和内部的S极。Or, the outer N pole and the inner S pole. 5.一种磁靶,其特征在于,包括固定板和设置在所述固定板上的如权利要求1~4任一项所述的条形磁铁;所述条形磁铁的凸起结构朝向所述固定板凸起设置。5. A magnetic target, characterized in that it comprises a fixed plate and the bar magnet according to any one of claims 1 to 4 arranged on the fixed plate; the protruding structure of the bar magnet faces the The protrusions of the fixed plate are set. 6.根据权利要求5所述的磁靶,其特征在于,所述磁靶包括多个条形磁铁,所述多个条形磁铁包括间插排布的内部N极、外围S极的条形磁铁和内部S极、外围N极的条形磁铁。6. The magnetic target according to claim 5, characterized in that, the magnetic target comprises a plurality of bar-shaped magnets, and the plurality of bar-shaped magnets include a bar-shaped arrangement of internal N poles and peripheral S poles. Magnets and bar magnets with inner S poles and outer N poles. 7.根据权利要求5所述的磁靶,其特征在于,所述条形磁铁为永磁铁或电磁铁。7. The magnetic target according to claim 5, wherein the bar magnet is a permanent magnet or an electromagnet. 8.根据权利要求5所述的磁靶,其特征在于,所述固定板上设有滑轨,所述条形磁铁以能够在所述滑轨上移动的方式连接在该滑轨上。8 . The magnetic target according to claim 5 , wherein a slide rail is provided on the fixed plate, and the bar magnet is connected to the slide rail in a manner capable of moving on the slide rail. 9.一种磁控溅射设备,其特征在于,包括靶材、背板和如权利要求5~8任一项所述的磁靶,所述靶材设置在所述背板的一侧,所述磁靶设置在该背板的另一侧。9. A magnetron sputtering device, characterized in that it comprises a target, a back plate and the magnetic target according to any one of claims 5 to 8, the target is arranged on one side of the back plate, The magnetic target is arranged on the other side of the back plate. 10.根据权利要求9所述的磁控溅射设备,其特征在于,还包括驱动装置,该驱动装置用于驱动所述条形磁铁沿预设驱动轨迹移动。10 . The magnetron sputtering device according to claim 9 , further comprising a driving device for driving the bar magnet to move along a preset driving track. 11 .
CN201310739712.0A 2013-12-26 2013-12-26 Bar magnet, magnetic target and magnetron sputtering equipment Expired - Fee Related CN103668096B (en)

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CN105506565B (en) * 2014-10-20 2018-04-13 昆山国显光电有限公司 Magnetron sputtering apparatus and its magnet apparatus
CN105088162B (en) * 2015-09-02 2019-03-05 京东方科技集团股份有限公司 A kind of magnetic control plate, magnetic control means and magnetic control sputtering device
CN108611616B (en) * 2018-07-20 2020-10-16 江西沃格光电股份有限公司 Coil mechanism and magnetron sputtering device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1531771A (en) * 2001-03-20 2004-09-22 ��Ĭ���� Improved Permanent Magnet Rotor Design
CN101080510A (en) * 2005-09-29 2007-11-28 新明和工业株式会社 Magnet structure for magnetron sputtering and cathode electrode unit and magnetron sputtering equipment
CN101300657A (en) * 2004-03-05 2008-11-05 东京毅力科创株式会社 Magnetically enhanced capacitive plasma source for ionized physical vapor deposition
CN201162043Y (en) * 2008-03-21 2008-12-10 北京京东方光电科技有限公司 Magnetron sputtering target structure and equipment
CN101545094A (en) * 2008-03-28 2009-09-30 应用材料公司 Rectangular magnetron with assistant edge magnets

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59200763A (en) * 1983-04-30 1984-11-14 Fujitsu Ltd sputtering equipment
JPS60200962A (en) * 1984-03-23 1985-10-11 Hitachi Ltd Planar magnetron sputtering method
JPH02254158A (en) * 1989-03-28 1990-10-12 Anelva Corp Thin film forming device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1531771A (en) * 2001-03-20 2004-09-22 ��Ĭ���� Improved Permanent Magnet Rotor Design
CN101300657A (en) * 2004-03-05 2008-11-05 东京毅力科创株式会社 Magnetically enhanced capacitive plasma source for ionized physical vapor deposition
CN101080510A (en) * 2005-09-29 2007-11-28 新明和工业株式会社 Magnet structure for magnetron sputtering and cathode electrode unit and magnetron sputtering equipment
CN201162043Y (en) * 2008-03-21 2008-12-10 北京京东方光电科技有限公司 Magnetron sputtering target structure and equipment
CN101545094A (en) * 2008-03-28 2009-09-30 应用材料公司 Rectangular magnetron with assistant edge magnets

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