CN103668096B - Bar magnet, magnetic target and magnetron sputtering equipment - Google Patents
Bar magnet, magnetic target and magnetron sputtering equipment Download PDFInfo
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- CN103668096B CN103668096B CN201310739712.0A CN201310739712A CN103668096B CN 103668096 B CN103668096 B CN 103668096B CN 201310739712 A CN201310739712 A CN 201310739712A CN 103668096 B CN103668096 B CN 103668096B
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- bar magnet
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- magnetron sputtering
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- magnetic target
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Abstract
The present invention relates to magnetron sputtering technique field, particularly relate to a kind of bar magnet, magnetic target and magnetron sputtering equipment, described bar magnet is provided with bulge-structure at region intermediate.Bar magnet provided by the invention, target and magnetron sputtering equipment, by the bulge-structure that bar magnet is provided with, in employing magnetron sputtering mode deposit film process, for magnetron sputtering region provides magnetic induction density strength distribution uniform magnetic field, guarantee that the film thickness deposited is even.
Description
Technical field
The present invention relates to magnetron sputtering technique field, particularly relate to a kind of bar magnet, magnetic target and magnetron sputtering equipment.
Background technology
In magnetron sputtering process, higher build-up of luminance ionization of gas degree is needed in order to obtain higher target atom sedimentation rate, and obtain higher build-up of luminance ionization of gas degree and need to ensure that electronics and build-up of luminance gas molecule have enough large probability of collision, therefore attachment magnetic target is adopted to control trajectory of electron motion in magnetron sputtering equipment, make its movement locus in the shape of a spiral, as shown in Figure 1.
When electronics moves in magnetic field, because the movement velocity of electronics and field direction exist certain angle, electronics circumferentially moves under being subject to the effect of long-range navigation magnetic force; Again due to the effect of electric field, make electronics have acceleration at electric field line in the other direction, therefore, electronics is under the acting in conjunction of magnetic field and electric field, and spiral advances, and extends movement path, improves the probability of collision of electronics and build-up of luminance gas molecule simultaneously.
At present, magnetic target adopts fixing bar permanent magnet to provide magnetic field for sputtering mostly.Multiple bar permanent magnets in magnetic target are fixed on retaining plate side by side.Magnetron sputtering equipment, comprises microscope carrier, is arranged on target above this microscope carrier, is positioned at the backboard on the upside of target and arranges bar permanent magnet on the upside of backboard.When being deposited the substrate be placed on microscope carrier by this magnetron sputtering equipment, due to magnetic induction density skewness on substrate in the magnetic field that bar permanent magnet provides, the magnetic induction density of bar magnet fringe region is better than the magnetic induction density of this magnet region intermediate, causes the uneven film thickness of deposition even.Find according to Square resistance measurement and deposition film thickness measuring, the film of deposition has intermediate thin, and the defect that the film of the end position of close bar permanent magnet is thicker.
In order to overcome the above problems, invention has been useful improvement.
Summary of the invention
(1) technical problem that will solve
The object of this invention is to provide and a kind ofly can make the more uniform a kind of bar magnet of the Magnetic Induction Density Distribution in magnetic field, magnetron sputtering region, magnetic target and magnetron sputtering equipment.
(2) technical scheme
The present invention is achieved by the following technical solutions: a kind of bar magnet, and described bar magnet is provided with bulge-structure at region intermediate.
Wherein, described bulge-structure is the bending structure be arranged on along this bar magnet length direction on described bar magnet.
Preferably, the bending angle scope of described bending structure is 165 ° ~ 178 °.
Particularly, described bar magnet comprises:
Peripheral S pole and inner N pole;
Or, peripheral N pole and inner S pole.
The present invention also provides a kind of magnetic target, comprises retaining plate and is arranged on the bar magnet as above on described retaining plate; The bulge-structure of described bar magnet is arranged towards described retaining plate projection.
Particularly, described magnetic target comprises multiple bar magnet, and described multiple bar magnet comprises the bar magnet interleaving the N pole, inside of arrangement, the bar magnet of peripheral S pole and inner S pole, peripheral N pole.
Preferably, described bar magnet is permanent magnet or electro-magnet.
Further, described retaining plate is provided with slide rail, and described bar magnet is can the mode of movement on described slide rail be connected on this slide rail.
The present invention also provides a kind of magnetron sputtering equipment, and comprise target, backboard and magnetic target as above, described target is arranged on the side of described backboard, and described magnetic target is arranged on the opposite side of this backboard.
Further, also comprise drive unit, this drive unit drives track to move for driving described bar magnet along presetting.
(3) beneficial effect
Compare with product with prior art, the present invention has the following advantages:
Bar magnet provided by the invention, target and magnetron sputtering equipment, by the bulge-structure that bar magnet is provided with, in employing magnetron sputtering mode deposit film process, for magnetron sputtering region provides magnetic induction density strength distribution uniform magnetic field, guarantee that the film thickness deposited is even.
Accompanying drawing explanation
Fig. 1 is trajectory of electron motion schematic diagram in magnetron sputtering equipment in prior art;
Fig. 2 is the vertical view of a kind of bar magnet of the present invention;
Fig. 3 is the vertical view of another kind of bar magnet of the present invention;
Fig. 4 is the side-view of bar magnet of the present invention;
Fig. 5 is the plan structure figure of magnetic target of the present invention;
Fig. 6 is the side-looking structure iron of magnetic target of the present invention;
Fig. 7 is the structure iron of magnetron sputtering equipment of the present invention.
In accompanying drawing, the component list representated by each assembly is as follows:
1-bar magnet; The bar magnet of the inner N pole of 11-, peripheral S pole; The bar magnet of the inner S pole of 12-, peripheral N pole; 3-retaining plate; 4-magnetic target; 5-backboard; 6-target; 7-substrate; 8-microscope carrier.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is made a detailed explanation.
The present embodiment provides a kind of bar magnet be arranged on magnetron sputtering equipment, and as shown in Figure 2, Figure 3 and Figure 4, the region intermediate of this bar magnet 1 is provided with bulge-structure.When adopting the mode deposit film of magnetron sputtering to substrate, bulge-structure on this bar magnet 1 is arranged towards described substrate bumps, make the two ends of bar magnet than bar magnet region intermediate away from described substrate, thus, the magneticstrength that bar magnet end positions provides dies down, overcome the defect that magneticstrength is comparatively strong, region intermediate magneticstrength is more weak of the marginal position at the close two ends of existing linear pattern bar magnet, form the comparatively uniform magnetic field of magnetic induction density in magnetron sputtering region.
The warp architectures such as described bulge-structure can adopt various structures, such as arc, can solve technical problem of the present invention.The present embodiment preferably adopts a kind of bulge-structure, and this bulge-structure is the bending structure be arranged on along this bar magnet length direction on described bar magnet.This bending structure is simple, is easy to manufacture.And, the angle of the bending structure on this bar magnet can adjust according to the square resistance of film of deposition and the bending angle of the measuring parameters such as thickness to bar magnet of film, ensure magnetron sputtering region to provide magnetic induction density uniform magnetic field, and on substrate, the uniform film of thickness can be formed by sputtering sedimentation.
Preferably, the bending angle scope of described bending structure is 165 ° ~ 178 °.When the bending angle of bending structure is less than 165 °, the angle that bar magnet is bending can be caused excessive, the fringe magnetic field at our bar magnet two ends can be made to reduce over many, cause new film forming heterogeneity phenomenon; When the bending angle of bending structure is greater than 178 °, similar with the effect of linear bar magnet, do not have the effect of adjustment bar magnet edges at two ends partial magnetic field intensity.To sum up, preferably the angular range of 165 °-178 ° as the bending angle scope of bending structure of the present invention.
Particularly, described bar magnet 1 is divided into two kinds, and a kind of is the bar magnet 11 of inner N pole, peripheral S pole;
The bar magnet 12 of inner S pole, peripheral N pole;
Preferably, described bar magnet 1 is permanent magnet or electro-magnet.
The present embodiment provides a kind of magnetic target, as shown in Figure 5 and Figure 6, and the bar magnet as above 1 comprising retaining plate 3 and be arranged on described retaining plate 3; The bulge-structure of described bar magnet 1 is arranged towards described retaining plate 3 projection.Described bar magnet 1 is one or more.When magnetic target comprises multiple bar magnet 1, described multiple bar magnet 1 comprises the bar magnet 12 interleaving the N pole, inside of arrangement, the bar magnet 11 of peripheral S pole and inner S pole, peripheral N pole.
Further, described retaining plate 3 is provided with slide rail (not shown), and described bar magnet is connected on this slide rail in the mode can slided on described slide rail.
The present embodiment also provides a kind of magnetron sputtering equipment, and as shown in Figure 7, comprise target 6, backboard 5 and magnetic target 4 as above, described target 6 is arranged on the downside of described backboard 5, and described magnetic target 4 is arranged on the upside of this backboard 5.Microscope carrier 8 is arranged on the below of target 6, places the substrate 7 being used for deposit film on the upside of microscope carrier 8.Described bar magnet 1 can move reciprocatingly along the in-plane being parallel to target 6 on slide rail, thus provides magnetic field for magnetron sputtering region.
Further, described magnetron sputtering equipment also comprises drive unit, and this drive unit drives track to move for driving described bar magnet along presetting.
Above embodiment is only for illustration of the present invention; and be not limitation of the present invention; the those of ordinary skill of relevant technical field; without departing from the spirit and scope of the present invention; can also make a variety of changes and modification; therefore all equivalent technical schemes also belong to category of the present invention, and scope of patent protection of the present invention should be defined by the claims.
Claims (10)
1. a bar magnet, is characterized in that, described bar magnet is provided with bulge-structure at region intermediate, and by bulge-structure for magnetron sputtering region provides magnetic induction density strength distribution uniform magnetic field.
2. bar magnet according to claim 1, is characterized in that, described bulge-structure is the bending structure be arranged on along this bar magnet length direction on described bar magnet.
3. bar magnet according to claim 2, is characterized in that, the bending angle scope of described bending structure is 165 ° ~ 178 °.
4. bar magnet according to claim 1, is characterized in that, described bar magnet comprises:
Peripheral S pole and inner N pole;
Or, peripheral N pole and inner S pole.
5. a magnetic target, is characterized in that, comprises retaining plate and is arranged on the bar magnet as described in any one of Claims 1 to 4 on described retaining plate; The bulge-structure of described bar magnet is arranged towards described retaining plate projection.
6. magnetic target according to claim 5, is characterized in that, described magnetic target comprises multiple bar magnet, and described multiple bar magnet comprises the bar magnet interleaving the N pole, inside of arrangement, the bar magnet of peripheral S pole and inner S pole, peripheral N pole.
7. magnetic target according to claim 5, is characterized in that, described bar magnet is permanent magnet or electro-magnet.
8. magnetic target according to claim 5, is characterized in that, described retaining plate is provided with slide rail, and described bar magnet is can the mode of movement on described slide rail be connected on this slide rail.
9. a magnetron sputtering equipment, is characterized in that, comprise target, backboard and the magnetic target as described in any one of claim 5 ~ 8, described target is arranged on the side of described backboard, and described magnetic target is arranged on the opposite side of this backboard.
10. magnetron sputtering equipment according to claim 9, is characterized in that, also comprises drive unit, and this drive unit drives track to move for driving described bar magnet along presetting.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310739712.0A CN103668096B (en) | 2013-12-26 | 2013-12-26 | Bar magnet, magnetic target and magnetron sputtering equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310739712.0A CN103668096B (en) | 2013-12-26 | 2013-12-26 | Bar magnet, magnetic target and magnetron sputtering equipment |
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| Publication Number | Publication Date |
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| CN103668096A CN103668096A (en) | 2014-03-26 |
| CN103668096B true CN103668096B (en) | 2015-08-12 |
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| CN201310739712.0A Active CN103668096B (en) | 2013-12-26 | 2013-12-26 | Bar magnet, magnetic target and magnetron sputtering equipment |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105506565B (en) * | 2014-10-20 | 2018-04-13 | 昆山国显光电有限公司 | Magnetron sputtering apparatus and its magnet apparatus |
| CN105088162B (en) * | 2015-09-02 | 2019-03-05 | 京东方科技集团股份有限公司 | A kind of magnetic control plate, magnetic control means and magnetic control sputtering device |
| CN108611616B (en) * | 2018-07-20 | 2020-10-16 | 江西沃格光电股份有限公司 | Coil mechanism and magnetron sputtering device |
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| CN1531771A (en) * | 2001-03-20 | 2004-09-22 | ��Ĭ���� | Improved permanent magnet rotor design |
| CN101080510A (en) * | 2005-09-29 | 2007-11-28 | 新明和工业株式会社 | Magnet structure for magnetron sputtering and cathode electrode unit and magnetron sputtering equipment |
| CN101300657A (en) * | 2004-03-05 | 2008-11-05 | 东京毅力科创株式会社 | Magnetically enhanced capacitive plasma source for ionized physical vapor deposition |
| CN201162043Y (en) * | 2008-03-21 | 2008-12-10 | 北京京东方光电科技有限公司 | Magnetron sputtering target structure and equipment |
| CN101545094A (en) * | 2008-03-28 | 2009-09-30 | 应用材料公司 | Rectangular magnetron with assistant edge magnets |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59200763A (en) * | 1983-04-30 | 1984-11-14 | Fujitsu Ltd | Sputtering device |
| JPS60200962A (en) * | 1984-03-23 | 1985-10-11 | Hitachi Ltd | Planar magnetron sputtering method |
| JPH02254158A (en) * | 1989-03-28 | 1990-10-12 | Anelva Corp | Thin film forming device |
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2013
- 2013-12-26 CN CN201310739712.0A patent/CN103668096B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1531771A (en) * | 2001-03-20 | 2004-09-22 | ��Ĭ���� | Improved permanent magnet rotor design |
| CN101300657A (en) * | 2004-03-05 | 2008-11-05 | 东京毅力科创株式会社 | Magnetically enhanced capacitive plasma source for ionized physical vapor deposition |
| CN101080510A (en) * | 2005-09-29 | 2007-11-28 | 新明和工业株式会社 | Magnet structure for magnetron sputtering and cathode electrode unit and magnetron sputtering equipment |
| CN201162043Y (en) * | 2008-03-21 | 2008-12-10 | 北京京东方光电科技有限公司 | Magnetron sputtering target structure and equipment |
| CN101545094A (en) * | 2008-03-28 | 2009-09-30 | 应用材料公司 | Rectangular magnetron with assistant edge magnets |
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| CN103668096A (en) | 2014-03-26 |
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