TWI438297B - Sputtering device and control method of magnet thereof - Google Patents

Description

Sputtering machine and control method thereof

The present invention relates to a deposition apparatus for a metal thin film, and more particularly to a sputtering machine and a method of controlling the same.

In the manufacturing process of a liquid crystal display panel, a plasma display panel, or a semiconductor microcircuit, in order to fabricate metal wires or metal contacts of various shapes, a manufacturer needs to form a metal thin film on the substrate. Generally, a method of forming a metal thin film on a substrate can be classified into a physical vapor deposition (PVD) method and a chemical vapor deposition (CVD) method. Among them, the PVD method can be mainly divided into a sputtering method, a resistance heating evaporation method, and an electron gun heating evaporation method. The so-called sputtering method refers to the introduction of an inert gas (such as Argon, Argon, or Ar) into a chamber of a sputtering machine in a vacuum system. The sputtering machine uses a magnetic or electric field to generate a plasma that is free of ions in the argon gas to cause the ions to bombard a target. When the target is bombarded with ions, the target atoms on the surface (front) of the target are detached and fly toward the substrate (sputtered). Finally, the target atoms flying toward the substrate adhere to the surface of the substrate to deposit on the surface of the substrate to form a thin metal film.

Generally, the sputtering machine is composed of a chamber, a carrier tray, a target carrier, a mask, and a magnet. The carrier tray is used to carry a substrate, and the carrier board is connected to a positive electrode. The chamber corresponds to the carrier tray, and the mask and the target carrier are disposed in the chamber. A negative electrode is coupled to a target carrier carrying a target. Magnet is placed on the target carrier on. The magnet and the target are respectively disposed on opposite surfaces of the target carrier. The magnet is adapted to generate magnetic field lines. The magnet moves along a fixed path, wherein the fixed path is a straight line. In addition, the fixed path has a midpoint and both ends. In the prior art, when the magnet moves back and forth between the ends of the fixed path, the speed of the magnet at the position symmetrical to the relay point is the same. During the sputtering process, the magnetic field lines generated by the magnets act to generate electrons in the plasma in the vicinity of the surface of the target, causing the electrons to move in a spiral manner. Thus, a sputter having a magnet can increase the number of times the electrons collide with argon when moving compared to a sputter without a magnet. When the number of electrons colliding with argon is increased, the number of ions of argon gas also increases. As the number of ions of argon increases, more target atoms will be bombarded by ions, causing more target atoms to adhere to the surface of the substrate. From the above, it can be seen that the sputtering machine having a magnet can increase the rate of sputtering (forming a metal thin film) of the sputtering machine by the magnetic field line of the magnet compared to a sputtering machine having no magnet.

However, in the prior art, when the magnet moves along the fixed path on the target carrier, since the magnet has a longer residence time at the two end points, it tends to cause excessive occurrence of the target relative to the ends of the fixed path. Get rid of. When the target is excessively detached from the point of the two ends, the target cannot be used any more, and the manufacturer must replace another new target to continue the sputtering. From another point of view, when the target is excessively detached relative to the ends of the two ends, it means that there is still enough material for sputtering near the midpoint of the target relative to the fixed path. As a result, although the target still has a material available near the midpoint, the target cannot be used any more and needs to be replaced with another new target. Therefore, the control method of the magnet of the prior art will cause the target The waste, in turn, raises the problem of increasing the production cost of the liquid crystal display panel.

In view of the above problems, the present invention provides a sputtering machine and a magnet control method thereof, wherein the magnet of the sputtering machine has two moving paths in the same straight line, thereby solving the sputtering process of the prior art, the edge of the target will be Excessive detachment, which in turn causes an increase in production costs.

One embodiment of the invention discloses a sputtering machine including a chamber, a target carrier, a mask, a magnet, a drive mechanism, and a stylized controller. The chamber has a chamber opening. The target carrier is located within the chamber. The mask covers the chamber opening, the mask has a mask opening, the mask opening is smaller than the chamber opening, and the mask opening exposes the target carrier. The magnet is located within the chamber and the target carrier is interposed between the mask and the magnet. The drive mechanism is coupled to the magnet for driving the magnet to move on the target carrier. The stylized controller is coupled to the driving mechanism for driving the magnet to move along a first path and a second path via the driving mechanism, the first path has two first end points, and the second path has two second end points, the first The path and the second path both span the mask opening, the second ends of the second path are between the first ends of the first path, and the space occupied by the magnets at the two first ends does not overlap the magnet The space occupied by the two second endpoints.

Another embodiment of the present invention discloses a magnet control method for controlling the consumption of a target during a sputtering process. The step of controlling the magnet includes disposing the target on a magnet and a mask. The mask is connected to the positive pole of the DC power source, and the mask includes a mask opening. Rotating the magnet between the two first end points of a first path to disengage a portion of the target from the surface of the target to form a corresponding first Two first recesses of the endpoint, wherein the first path spans the mask opening. When the depth of any two of the first recesses is greater than a threshold, the magnet is reciprocated between the two second ends of the second path and the second path does not pass through the two first ends, so that part of the target is self-contained The surface of the target is detached to form two second recesses corresponding to the two second ends, wherein the second path spans the mask opening, and the second ends are between the two first ends to make the two first recesses And the two second recesses are spaced apart from each other by a distance greater than zero.

Based on the above embodiment, since the magnet of the sputtering machine moves relative to the target along the first path and the second path, wherein the second ends of the second path are between the first ends of the first path, And the space occupied by the magnets at the two first end points does not overlap the space occupied by the magnets at the two second end points. Therefore, compared with the prior art, when the sputtering machine is sputtered, the sputtering machine can effectively utilize the target to uniformly detach the target, thereby forming the target atoms onto the substrate, and at the same time Avoid the waste of the target, and then solve the problem of increased production costs.

The above description of the present invention and the following description of the embodiments of the present invention are intended to illustrate and explain the spirit and principles of the invention.

The detailed features and advantages of the present invention are set forth in the Detailed Description of the Detailed Description of the <RTIgt; </ RTI> <RTIgt; </ RTI> </ RTI> </ RTI> <RTIgt; The objects and advantages associated with the present invention can be readily understood by those skilled in the art. The following examples are intended to further illustrate the aspects of the present invention, but are not intended to limit the present invention The scope of the invention.

According to an embodiment of the invention, a sputtering machine is disclosed. The sputtering machine is adapted to carry a substrate, and the sputtering machine performs a sputtering process on the substrate to disengage a target to form a target onto the substrate.

Please refer to FIG. 1. FIG. 1 is a cross-sectional view showing a sputtering machine according to an embodiment of the present invention. In the present embodiment, the sputtering machine 100 includes a chamber 110, a mask 120, a target carrier 130, a magnet 140, a drive mechanism 150, and a stylized controller 160.

The chamber 110 has a chamber opening 112. The target carrier 130 is adapted to carry a target (not shown). Additionally, the target carrier 130 corresponds to the chamber opening 112. For example, a cooling water path 132 is provided in the target carrier 130 for cooling the target. The magnet 140 is located in the chamber 110 and is disposed on the target carrier 130. In addition, the target carrier 130 is interposed between the mask 120 and the magnet 140.

In the present embodiment, the material of the target carrier 130 is copper, but is not intended to limit the invention.

The mask 120 covers the chamber opening 112. The mask 120 includes a plate body 125 and a ring-shaped wall 126. The plate body 125 has an inner wall surface 128 that faces the target carrier plate 130. The annular wall 126 is located on the plate body 125. In addition, the mask 120 has a mask opening 122 that extends through the panel 125 of the mask 120 from the inner wall surface 128 such that the mask opening 122 exposes the target carrier 130. The annular wall 126 surrounds the shroud opening 122, the shroud opening 122 is smaller than the chamber opening 112, and the shroud opening 122 includes two side edges 123, 124 that oppose each other.

The drive mechanism 150 is coupled to the magnet 140. The driving mechanism 150 is configured to drive the magnet 140 to move on the target carrier 130. In other embodiments of the present embodiment and portions of the present invention, the drive mechanism 150 is disposed within the chamber 110, and the drive mechanism 150 includes a slide rail 152, a transmission member 154, and an actuator 156. The slide rail 152 is disposed on the target carrier 130, and the magnet 140 is slidably disposed on the slide rail 152, and the transmission member 154 is coupled to the magnet 140. The actuator 156 is coupled to the transmission member 154 and the stylized controller 160 for driving the magnet 140 to move back and forth along the slide rail 152 via the transmission member 154 under the control of the stylized controller 160.

The stylized controller 160 is coupled to the actuator 156 of the drive mechanism 150. In other embodiments of this embodiment and portions of the present invention, the stylized controller 160 is disposed within the chamber 110. The stylized controller 160 is used to drive the magnet 140 to move along the slide rail 152 via the transmission member 154 and the actuator 156.

In this embodiment and other embodiments of the present invention, the sputtering machine 100 further includes a carrier disk 180 for carrying a substrate (not shown), and the substrate corresponds to the mask 120. The mask opening 122. The carrier tray 180 includes a carbon plate 181, a heater 182, and a cooling water path 184. A heater 182 is used to heat the substrate. The carbon plate 181 is an insulator, and the carbon plate 181 is mainly used to absorb the heat energy of the heater 182 during operation and to dissipate heat. The cooling water passage 184 is disposed below the heater 182, and the cooling water passage 184 is used to cool the heater 182.

When the sputtering machine 100 is in operation, the sputtering machine 100 is connected to a DC power source. A negative electrode of the DC power source is connected to the target carrier 130, and a positive electrode of the DC power source is connected to the mask 120. An electric field can be formed in the sputtering machine 100 by the power connection method described above.

In one embodiment, the sputtering machine 100 further includes a ring-shaped retaining wall 170 disposed at an edge of the target carrier 130 while the annular retaining wall 170 surrounds the annular wall 126. The annular retaining wall 170 is used to prevent the plating of the target during sputtering of the sputtering machine 100. In addition, the annular retaining wall 170 is grounded.

The movement path of the magnet 140 will be described below. The slide rail 152 defines a first path 310 and a second path 320, and the magnet 140 is movable along the first path 310 and the second path 320. The first path 310 has two first endpoints 312, 314 and a midpoint 350. The first end point 312 corresponds to the side edge 123 and the first end point 314 corresponds to the side edge 124. The second path 320 extends from the side edge 123 toward the side edge 124, and the second path 320 has two second end points 322, 324. The second end point 322 corresponds to the side edge 123 and the second end point 324 corresponds to the side edge 124. Both the first path 310 and the second path 320 span the mask opening 122. In this embodiment, the second path 320 is overlapped with the first path 310, and both the first path 310 and the second path 320 are straight lines.

Moreover, the two second endpoints 322, 324 of the second path 320 are interposed between the two first endpoints 312, 314 of the first path 310. At the same time, the space occupied by the magnets 140 at the two first end points 312, 314 does not overlap the space occupied by the magnets 140 at the two second end points 322, 324. The width of the magnet 140 in a direction parallel to the first path 310 is less than the distance between two adjacent first end points 312 and the second end point 322. On the other side, the width of the magnet 140 in a direction parallel to the first path 310 is less than the distance between two adjacent first end points 314 and the second end point 324 (as shown in FIG. 5, FIG. 5 Fig. 1 is a schematic view of the line 5-5 of Fig. 1).

A flowchart of a method of controlling the magnet 140 of the sputtering machine 100 will be described below. Please Referring to FIG. 2 and FIG. 3, FIG. 2 is a flow chart showing a method of controlling a magnet according to an embodiment of the present invention, and FIG. 3 is a magnet of the sputtering machine of FIG. 1 during sputtering. A schematic diagram of the movement along the first path.

First, a target 200 is disposed between the magnet 140 and the mask 120 (S110). First, an indium paste 240 is applied to the target carrier, and a target 200 is disposed on the indium paste 240. The target surface 230 of the target 200 corresponds to the chamber opening 112. At the same time, a substrate 400 is disposed on a carrier tray 180. Further, the anode of the DC power source is further connected to the mask 120, and the cathode of the DC power source is connected to the target carrier 130.

In this embodiment, the material of the target 200 may be aluminum (Al, abbreviated as Al), aluminum alloy (Aluminum alloy), copper (Copper, abbreviated as Cu), gold (Gold, referred to as Au), indium tin oxide (Indium). Tin Oxide, referred to as ITO) or Molybdenum (MO). The material of the substrate 400 is glass. However, the above materials are not intended to limit the invention.

Next, the magnet 140 is reciprocated between the two first end points 312, 314 of the first path 310 to disengage part of the target 200 from the target surface 230 (S130), forming corresponding to the two first end points 312. Two first recesses 210, 212 of 314. Wherein the first path 310 spans the mask opening 122. That is, when the sputtering machine 110 begins to sputter the substrate 400, the stylizing controller 160 drives the magnet 140 to move on the slide rail 152. The magnet 140 facilitates detachment of the target 200 from the target surface 230. As the magnet 140 moves back and forth over the first path 310, the magnet 140 stays at the two first end points 312, 314 for a longer period of time, and the target 200 corresponding to the two first end points 312, 314 is easily detached. Therefore, when the atoms on the target surface 230 of the target 200 are taken off Offset, two first recesses 210, 212 are created on the target 200 corresponding to the first endpoints 312, 314, respectively.

Please refer to FIG. 3 and FIG. 4 at the same time. FIG. 4 is a schematic diagram of the movement of the magnet of the sputtering machine of FIG. 1 along the second path during the sputtering process. Then, when the depth of any two of the first recesses 210, 212 is greater than a threshold D1, the magnet 140 is reciprocated between the two second ends 322, 324 of a second path 320 and the second path 320 does not pass through two The first end points 312, 314 are such that a portion of the target 200 is detached from the target surface 230 (S150) to form two second recesses 220, 222 corresponding to the two second end points 322, 324 (as shown in FIG. 4 Shown). The second path 320 spans the mask opening 122. At this time, since the depths of the two first recesses 210, 212 of the target 200 are greater than the threshold D1, that is, when the two first recesses 210, 212 are close to the target carrier 130, the stylized controller 160 adjusts the magnet 140 to A round trip between the two second endpoints 322, 324 of the second path 320. As such, the magnets 140 no longer pass relative to the first recesses 210, 212 of the target 200, so that the depths of the two first recesses 210, 212 are no longer deepened.

In other embodiments of this embodiment and portions of the present invention, when the magnet 140 is at the second end point 322, an orthogonal projection of the magnet 140 on the inner wall surface 128 covers the side edge 123 and the magnet 140 is located at the second end point 324. At the same time, another orthogonal projection of the magnet on the inner wall surface 128 covers the side edge 124. The two second end points 322, 324 are interposed between the two first end points 312, 314 such that the two first recesses 210, 212 and the two second recesses 220, 222 are spaced apart from each other by a distance D2 greater than zero (the magnet 140 The movement mode is as shown in FIG. 5, and FIG. 5 is a schematic diagram of a cut line of 5-5 of FIG. 1. The first projection areas 510 and 512 respectively have the magnet 140 at the first end point 310 and the first end point 312. On the inner wall The orthogonal projections of 128, the second projection regions 520, 522 are orthogonal projections of the inner wall surface 128 when the magnet 140 is at the second end point 320 and the second end point 322, respectively.

In the present invention, an orthogonal projection system is defined as a projection of a projection line perpendicular to a projection surface. That is, in this embodiment and some other embodiments, when the magnet 140 is located at the second end point 322, the projection surface of a vertical inner wall surface 128 of the magnet 140 covers the side edge 123; the magnet 140 is located at the second end. At point 324, the projected surface of a vertical inner wall surface 128 of the magnet 140 covers the side edge 124. That is, when the magnet 140 reciprocates in the second path 320, the magnet 140 covers the mask opening 122.

In the prior art, the magnet of the prior art can only be symmetric with respect to the midpoint for the same speed movement. In this embodiment, compared to the prior art, the moving speed of the magnet 140 can be varied in different speeds in different intervals on the same path according to actual needs. The moving speed interval of the magnet 140 on the slide rail 152 will be described below. Please refer to FIG. 6 and FIG. 7 at the same time. FIG. 6 is a schematic view of the slide rail and the magnet of the sputtering machine of FIG. 1 . Fig. 7 is a graph showing the travel distance and speed of the magnet of Fig. 6. The first path 310 has a pair of relay points 340, 342. The positions of the relay points 340, 342 are symmetric with respect to the midpoint 350 of the first path 310, and the speed of the magnets 140 passing through the relay points 340, 342 described above is different. For example, in this embodiment, the total length of the first path 310 is 570 mm (millimetter, mm), the relay point 340 is located at the midpoint of the midpoint 350 and the first end point 312, and the relay point 342 is located. The midpoint 350 and the middle end of the first endpoint 314. Magnet 140 moves from first end point 312 of first path 310 to first end point 314. As can be seen from Fig. 7, when the magnet 140 is located at the relay point 340, the speed of the magnet 140 is 490 (mm/sec, mm/s); when the magnet When the 140 is located at the relay point 342, the speed of the magnet 140 is 430 (mm/s). In other words, the moving speed of the magnet 140 of the present embodiment is asymmetrical to the midpoint 350. In this way, the sputtering machine 100 of the present embodiment can more effectively adjust the thickness of each part of the target 200 to facilitate the full utilization of the target 200 and the uniform detachment of the atoms of the target 200 during sputtering.

The embodiment of FIG. 1 is not intended to limit the size and width of the magnet 140 and the distance between the first path 310 and the second path 320. In order to utilize the target 200 more effectively, the magnet 140 may further have three or more moving paths that overlap each other. Please refer to FIG. 8 and FIG. 9 at the same time. FIG. 8 is a schematic cross-sectional view of a sputtering machine according to another embodiment of the present invention, and FIG. 9 is a schematic cross-sectional view taken along line 9-9 of FIG. Wherein the same reference numerals denote the same or similar elements as the foregoing embodiments. In this embodiment, in addition to the original first path 310 and the second path 320, the magnet 140 further has a third path 330 on the slide rail 152, and the third path 330 has two third end points 332, 334. The third endpoint 332 is between the first endpoint 312 and the second endpoint 322, and the third endpoint 334 is between the first endpoint 314 and the second endpoint 324. At the same time, the width of the magnet 140 in a direction parallel to the first path 310 is less than half the distance between the adjacent first end point 312 and the second end point 332. On the other side, the width of the magnet 140 in a direction parallel to the first path 310 is less than half the distance between the adjacent first end point 314 and the second end point 324 (as shown in FIG. 9, the first projection area 510) 512 is an orthogonal projection of the magnet 140 at the first end point 310 and the first end point 312 on the inner wall surface 128 of the mask 120, and the second projection areas 520 and 522 are respectively the magnet 140 at the second end point. 320, the orthogonal projection of the inner wall surface 128 at the second end point 322, The three projection areas 530, 532 are orthogonal projections of the inner wall surface 128 when the magnet 140 is at the third end point 330 and the third end point 332, respectively. Therefore, in this embodiment and some other embodiments, the magnet 140 may further have a third path 330 between the first path 310 and the second path 320, and the third end points 332, 334 occupy The space does not overlap the space occupied by the magnets 140 at the two first endpoints 312, 314 or the two second endpoints 322, 324. As such, as the width of the magnet 140 is smaller, the magnet 140 can have more of a plurality of moving paths across the mask opening 122. Therefore, when the magnet 140 has three or more moving paths overlapping each other, the target 200 can be more effectively utilized to sputter the substrate 400.

Based on the above embodiment, since the magnet of the sputtering machine has two or more different lengths of moving paths, the sputtering machine automatically adjusts when the sputtering machine performs sputtering and the ends of the target material are excessively deep depressed. The moving path of the magnet is such that the second moving path does not overlap the two end points of the first moving path that has generated the deep recess, so as to avoid excessive detachment of the ends of the target, thereby damaging the target of the sputtering machine. Carrier board. Therefore, compared with the prior art, the sputtering machine and the control method of the magnet disclosed in the embodiment can effectively control the detachment of the target, and the target that should be replaced can be reused. At the same time, by adjusting the moving speed of the magnet freely, the thickness of each part of the target can be adjusted to achieve the effect of making full use of the target. In this way, the liquid crystal display panel process of the sputtering machine of the above embodiment avoids the waste of the target material, thereby achieving the effect of reducing the production cost.

Although the present invention has been described above in terms of the preferred embodiments thereof, it is not intended to limit the invention, and the skilled in the art, without departing from the spirit and scope of the invention. In the meantime, the scope of patent protection of the present invention is subject to the scope of the patent application attached to the specification.

100‧‧‧ Sputtering machine

110‧‧‧ chamber

112‧‧‧ Chamber opening

120‧‧‧ mask

122‧‧‧Mask opening

123, 124‧‧‧ side edge

125‧‧‧ board

126‧‧‧ ring wall

128‧‧‧ inner wall

130‧‧‧target carrier

132‧‧‧Cooling waterway

140‧‧‧ magnet

150‧‧‧ drive mechanism

152‧‧‧rails

154‧‧‧ Transmission parts

156‧‧‧Actuator

160‧‧‧Standard Controller

170‧‧‧ ring retaining wall

180‧‧‧ Carrying tray

181‧‧‧carbon board

182‧‧‧heater

184‧‧‧Cooling waterway

200‧‧‧ targets

210, 212‧‧‧ first depression

220, 222‧‧‧ second depression

230‧‧‧ target surface

240‧‧‧Indium gel

310‧‧‧First path

312, 314‧‧‧ first endpoint

320‧‧‧Second path

322, 324‧‧‧ second endpoint

330‧‧‧ third path

332, 334‧‧‧ third endpoint

340, 342‧‧‧ Relay points

350‧‧‧ midpoint

400‧‧‧Substrate

510, 512‧‧‧ first projection area

520, 522‧‧‧second projection area

530, 532‧‧‧3rd projection area

D1‧‧‧ threshold

D2‧‧‧ distance

Fig. 1 is a schematic cross-sectional view showing a sputtering machine according to an embodiment of the present invention.

Fig. 2 is a flow chart showing a method of controlling a magnet according to an embodiment of the present invention.

Fig. 3 is a schematic view showing the movement of the magnet of the sputtering machine of Fig. 1 along the first path during sputtering.

Fig. 4 is a schematic view showing the movement of the magnet of the sputtering machine of Fig. 1 along the second path during the sputtering process.

Fig. 5 is a schematic view showing a cut line taken along line 5-5 of Fig. 1.

Figure 6 is a schematic view of the slide rail and magnet of the sputtering machine of Figure 1.

Fig. 7 is a graph showing the travel distance and speed of the magnet of Fig. 6.

Figure 8 is a schematic cross-sectional view of a sputtering machine in accordance with another embodiment of the present invention.

Figure 9 is a schematic view of a cut line 9-9 of Figure 8.

100‧‧‧ Sputtering machine

110‧‧‧ chamber

112‧‧‧ Chamber opening

120‧‧‧ mask

122‧‧‧Mask opening

123, 124‧‧‧ side edge

125‧‧‧ board

126‧‧‧ ring wall

128‧‧‧ inner wall

130‧‧‧target carrier

132‧‧‧Cooling waterway

140‧‧‧ magnet

150‧‧‧ drive mechanism

152‧‧‧rails

154‧‧‧ Transmission parts

156‧‧‧Actuator

160‧‧‧Standard Controller

170‧‧‧ ring retaining wall

180‧‧‧ Carrying tray

181‧‧‧carbon board

182‧‧‧heater

184‧‧‧Cooling waterway

310‧‧‧First path

312, 314‧‧‧ first endpoint

320‧‧‧Second path

322, 324‧‧‧ second endpoint

350‧‧‧ midpoint

Claims (10)

A sputtering machine comprising: a chamber having a chamber opening; a target carrier located within the chamber; a mask covering the chamber opening, the mask having a mask opening, the mask The cover opening is smaller than the opening of the chamber, and the mask opening exposes the target carrier; a magnet is located in the chamber, and the target carrier is interposed between the mask and the magnet; a driving mechanism is connected The magnet is configured to drive the magnet to move on the target carrier; and a stylized controller is coupled to the driving mechanism for driving the magnet along the first path and a second path via the driving mechanism Moving, the first path has two first ends, and the second path has two second ends, the first path and the second path both span the mask opening, and the two second ends of the second path The point is between the two first ends of the first path, and the space occupied by the magnets at the two first ends does not overlap the space occupied by the magnets at the two second ends. The sputtering machine of claim 1, wherein the mask opening comprises two side edges opposite to each other, the second path extending from the side edge toward the other side edge, the mask opening being from the mask An inner wall surface extends through the mask, and when the magnet is located at the second end point, an orthogonal projection of the magnet on the inner wall surface covers the side edge. When the magnet is at the other of the second end points, another orthogonal projection of the magnet on the inner wall surface covers the other side edge. The sputter machine of claim 1, wherein the driving mechanism comprises: a sliding rail, the magnet is slidably disposed on the sliding rail, the sliding rail defines the first path and the second path, Wherein the second path is overlapped with the first path; a transmission member coupled to the magnet; and an actuator coupled to the transmission member and the stylized controller for being controlled by the stylized controller The transmission member drives the magnet to slide along the slide rail. The sputtering machine of claim 1, further comprising a DC power source, the DC power source comprising a positive electrode and a negative electrode, the mask being connected to the positive electrode, the target carrier being connected to the negative electrode. The sputter machine of claim 1, further comprising a grounded annular retaining wall, the mask comprising a plate body and a ring-shaped wall, the mask opening extending through the plate body, wherein the ring-shaped wall body is located The panel body surrounds and surrounds the mask opening, and the annular retaining wall surrounds the annular wall. The sputtering machine of claim 1, wherein a width of the magnet in a direction parallel to the first path is less than a distance between two adjacent first end points and the second end point. The sputtering machine of claim 1, wherein a width of the magnet in a direction parallel to the first path is less than a distance between two adjacent first end points and the second end point Half away. A magnet control method for controlling consumption of a target during a sputtering process, the method comprising: disposing the target between a magnet and a mask, the mask and a positive electrode of the DC power source Connecting, and the mask includes a mask opening; causing the magnet to reciprocate between the first ends of a first path to disengage a portion of the target from the surface of the target to form corresponding to the two Two first recesses of the first end, wherein the first path spans the mask opening; and when the depth of any of the two first recesses is greater than a threshold, the magnets are second and second in a second path Reciprocating between the end points and the second path does not pass through the two first ends, such that a portion of the target is detached from the surface of the target to form two second recesses corresponding to the two second ends, wherein The second path spans the mask opening, and the two second ends are between the two first ends such that the two first recesses and the two second recesses are spaced apart from each other by a distance greater than zero. The method of controlling a magnet according to claim 8, wherein the mask opening comprises two side edges opposite to each other, the second path extending from the side edge toward the other side edge, the mask opening being from the mask An inner wall surface extends through the mask, and when the magnet is located at the second end point, an orthogonal projection of the magnet on the inner wall surface covers the side edge, and when the magnet is located at the other second end point, the magnet Another orthogonal projection of the magnet on the inner wall surface covers the other side edge. The method of controlling a magnet according to claim 8, wherein the first path has at least one pair of relay points, the position of the pair of relay points is symmetric with a midpoint of the first path, and the magnet passes the pair of relays The speed of the points is not the same.