JPH05132774A - Sputtering apparatus - Google Patents

Sputtering apparatus

Info

Publication number
JPH05132774A
JPH05132774A JP29534891A JP29534891A JPH05132774A JP H05132774 A JPH05132774 A JP H05132774A JP 29534891 A JP29534891 A JP 29534891A JP 29534891 A JP29534891 A JP 29534891A JP H05132774 A JPH05132774 A JP H05132774A
Authority
JP
Japan
Prior art keywords
backing plate
magnet
target
sputtering
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP29534891A
Other languages
Japanese (ja)
Inventor
Masafumi Suzuki
雅史 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP29534891A priority Critical patent/JPH05132774A/en
Publication of JPH05132774A publication Critical patent/JPH05132774A/en
Withdrawn legal-status Critical Current

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  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE:To thin a backing plate and to strengthen the control of film quality, in a sputtering apparatus by sealing a jacket for cooling water at the rear of a backing plate for holding a target with a cover or evacuating the inside of a magnet chamber at the rear of the backing plate. CONSTITUTION:At the time of evacuating the inside of a sputtering chamber 1 provided with the substrate 10 to be treated and a target 9 by an exhaust port 3, introducing a gas for electric discharge from a gas introducing port 2 under a low pressure and forming the thin film of the target 9 material on the surface of the substrate 10 by glow discharge, a jacket 4A for water cooling provided at the rear of the backing plate 4 of the target 9 is provided with a cover 4B fixed by silver solder, and the pressure of the water cooling applied to the backing plate 4 is released, or furthermore, the inside of a magnet chamber 6 charged with a magnet 5 for magnetron sputtering is evacuated to a low pressure similar to that in the sputtering chamber 1. The thickness can be reduced without the deformation of the backing plate 4 caused by pressurizing in a direction of the sputtering chamber 1, and the control of the film quality of the thin film on the substrate 10 by the magnetic field of the magnet 5 can be made easy.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明はスパッタ装置に係り,特
にスパッタガンのバッキングプレートおよび磁石室の構
造に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputtering apparatus, and more particularly to the structure of a backing plate and magnet chamber of a sputtering gun.

【0002】スパッタ装置は半導体装置やLCD 装置の製
造プロセスにおいて,種々の膜の成膜に広く用いられて
いる。スパッタガンのバッキングプレートはスパッタ材
料(ターゲット)をセットするプレートである。
Sputtering devices are widely used for forming various films in the manufacturing process of semiconductor devices and LCD devices. The backing plate of the sputter gun is a plate on which a sputter material (target) is set.

【0003】近年,スパッタによる成膜工程では,被成
膜サブストレートの大型化に伴いターゲットが大口径化
し,バッキングプレートの重量も重くなり取り扱いが困
難になっていた。また,膜質を制御するためにマグネト
ロンスパッタの磁場強度を上げるようになってきた。さ
らに,微粒子による汚染の影響を低減する必要が生じて
きた。
In recent years, in the film forming process by sputtering, the target has a large diameter and the backing plate has become heavy due to the increase in the size of the film-forming substrate, making it difficult to handle. Also, the magnetic field strength of magnetron sputtering has been increased to control the film quality. Furthermore, it has become necessary to reduce the effect of contamination by fine particles.

【0004】[0004]

【従来の技術】従来のスパッタガンはプレーナ型とすり
鉢型があったが,プレーナ型に微粒子低減に効果のある
全面エロージョン型(マグネトロンスパッタ方式)が導
入されて,プレーナ型が主流となってきた。
2. Description of the Related Art Conventional sputter guns are classified into a planar type and a mortar type, but the planar type has become the mainstream due to the introduction of a full-scale erosion type (magnetron sputtering type) which is effective in reducing fine particles. ..

【0005】図3は従来例によるプレーナ型マグネトロ
ンスパッタの断面図である。図において,1はスパッタ
室,2はガス導入口,3は排気口,4はバッキングプレ
ート,5は永久磁石,7はモータ,8は冷却水出入口,
9はターゲット,10は被処理サブストレートである。
FIG. 3 is a sectional view of a conventional planar type magnetron sputter. In the figure, 1 is a sputtering chamber, 2 is a gas inlet, 3 is an exhaust port, 4 is a backing plate, 5 is a permanent magnet, 7 is a motor, 8 is a cooling water inlet / outlet,
Reference numeral 9 is a target, and 10 is a substrate to be processed.

【0006】プレーナ型で,全面エロージョン化する方
法として,殆どが永久磁石5を回転させる構造がとられ
ている。この場合のスパッタガンはバッキングプレート
4をハット型にして,その中に回転磁石をセットし,ま
た冷却水を通水する構造をとっている。
[0006] As a method of making the entire surface erosion of the planar type, most of the structure is to rotate the permanent magnet 5. In this case, the spatter gun has a structure in which the backing plate 4 has a hat shape, a rotary magnet is set therein, and cooling water is passed.

【0007】[0007]

【発明が解決しようとする課題】従来例のハット型バッ
キングプレートを用いている場合, バッキングプレート
内に冷却水を流しているため,バッキングプレートには
大気圧と水圧の和がかかるため,大型化したときにこれ
らの圧力に耐えられるようにバッキングプレートの厚さ
を増加させなければならない。これは, 膜質を制御する
ために磁場強度を上げようとすることを妨げる結果とな
る。
When the conventional hat-type backing plate is used, the backing plate is subjected to the sum of the atmospheric pressure and the water pressure because the cooling water is flowing in the backing plate. The thickness of the backing plate must be increased to withstand these pressures when applied. This results in hindering attempts to increase the magnetic field strength to control film quality.

【0008】本発明はバッキングプレートを薄型化して
磁場強度を上げて膜質制御を可能にし, バッキングプレ
ートの軽量化と, 磁石の防錆とをはかることを目的とす
る。
An object of the present invention is to reduce the thickness of the backing plate to increase the magnetic field strength and control the film quality, to reduce the weight of the backing plate and to prevent the magnets from rusting.

【0009】[0009]

【課題を解決するための手段】上記課題の解決は, 1)表面にスパッタ材料であるターゲットを保持し且つ
裏面に水冷用のジャケットを彫り込んだバッキングプレ
ート本体に,裏面より蓋をして該ジャケット内に冷却水
を通水できる構造のバッキングプレートを有するスパッ
タ装置,あるいは 2)表面にターゲットを保持し且つ裏面にマグネトロン
スパッタ用の磁石を保持する磁石室を有し,該磁石室が
気密で排気できる構造であることを特徴とするスパッタ
装置により達成される。
Means for Solving the Problems To solve the above problems, 1) a backing plate body having a target, which is a sputtering material, held on the front surface and a water cooling jacket engraved on the back surface is covered with a lid from the back surface of the jacket A sputtering device having a backing plate with a structure capable of passing cooling water inside, or 2) a magnet chamber for holding a target on the front surface and a magnet for magnetron sputtering on the back surface, and the magnet chamber is airtight and exhausted. This is achieved by a sputtering device characterized by having a possible structure.

【0010】[0010]

【作用】本発明では,バッキングプレート内に水冷用の
ジャケットを彫り込み, 銀ろう付けにより蓋をして冷却
水を通水しているので, バッキングプレートを変形させ
る力のうち水圧分が除去されて大気圧分のみとしてい
る。さらに, バッキングプレートを薄くするために, 回
転する磁石を磁石室に入れ, 磁石室をスパッタ室と同様
に減圧してバッキングプレートに大気圧がかからないよ
うにしている。
In the present invention, the water cooling jacket is engraved in the backing plate, the lid is closed by silver brazing, and the cooling water is passed through. Therefore, the water pressure component of the force deforming the backing plate is removed. Only atmospheric pressure is used. Furthermore, in order to make the backing plate thinner, a rotating magnet is placed in the magnet chamber and the magnet chamber is decompressed in the same way as the sputter chamber so that the backing plate is not exposed to atmospheric pressure.

【0011】バッキングプレートが薄くなることによ
り,マグネトロンスパッタの作用をするターゲット表面
での磁場強度が強くなり,永久磁石回転型でも水平成分
(ターゲット表面に平行な成分)で 700ガウス以上の強
度を容易に達成でき,磁力による膜質の制御が可能にな
る。
By making the backing plate thin, the magnetic field strength on the target surface acting as magnetron sputter becomes strong, and even in the permanent magnet rotating type, the strength of 700 Gauss or more can be easily achieved in the horizontal component (component parallel to the target surface). It is possible to control the film quality by magnetic force.

【0012】[0012]

【実施例】図1は本発明の実施例によるプレーナ型マグ
ネトロンスパッタ装置の断面図である。
1 is a sectional view of a planar type magnetron sputtering apparatus according to an embodiment of the present invention.

【0013】図において,1はスパッタ室,2はガス導
入口,3は排気口,4はバッキングプレート本体,4Aは
バッキングプレート本体に彫り込まれた水冷用のジャケ
ット, 4Bは銀ろう付けされた蓋, 4Cは冷却水の出入口,
5は永久磁石,6は磁石室,7はモータ,9はターゲッ
ト,10はサブストレートである。
In the figure, 1 is a sputtering chamber, 2 is a gas inlet, 3 is an exhaust port, 4 is a backing plate body, 4A is a water cooling jacket carved in the backing plate body, and 4B is a lid brazed with silver. , 4C is the inlet / outlet of cooling water,
5 is a permanent magnet, 6 is a magnet chamber, 7 is a motor, 9 is a target, and 10 is a substrate.

【0014】実施例では,磁石室6をスパッタ室1と同
様に排気することにより,バッキングプレートに大気圧
がかからないため,バッキングプレートは薄型化されて
いる。
In the embodiment, the magnet chamber 6 is evacuated in the same manner as the sputtering chamber 1, so that no atmospheric pressure is applied to the backing plate, so the backing plate is made thin.

【0015】さらにバッキングプレートは図3に示され
る構造を有するため,冷却水がバッキングプレート内を
流れ,冷却効率がよい。図2は実施例のバッキングプレ
ートの平面図である。
Further, since the backing plate has the structure shown in FIG. 3, the cooling water flows in the backing plate and the cooling efficiency is good. FIG. 2 is a plan view of the backing plate of the embodiment.

【0016】図において,点線で示されるウオータジャ
ケット4Aは, 蓋4Bでバッキングプレート本体4に銀ろう
付けされて形成され,冷却水の出入口4Cにより外部に導
出されている。
In the figure, a water jacket 4A shown by a dotted line is formed by brazing silver on the backing plate body 4 with a lid 4B, and led out to the outside by a cooling water inlet / outlet port 4C.

【0017】[0017]

【発明の効果】本発明によれば,バッキングプレートが
薄型化されるため磁場強度を上げて膜質制御を可能に
し, 且つバッキングプレートが軽量化さて取り扱いが容
易になる。また,磁石が直接冷却水に触れないため磁石
の防錆をかることができ,長寿命が期待できる。また,
ターゲットの冷却効率が非常に高くなる。さらに磁石と
バッキングプレート間の距離を任意に変えても冷却効果
には影響を及ぼさない。
According to the present invention, since the backing plate is made thin, the magnetic field strength can be increased to control the film quality, and the backing plate can be made lighter and easier to handle. Moreover, since the magnet does not come into direct contact with the cooling water, the magnet can be rust-proofed and a long life can be expected. Also,
The target cooling efficiency is very high. Further, even if the distance between the magnet and the backing plate is arbitrarily changed, it does not affect the cooling effect.

【図面の簡単な説明】[Brief description of drawings]

【図1】 本発明の実施例によるプレーナ型マグネトロ
ンスパッタ装置の断面図
FIG. 1 is a sectional view of a planar type magnetron sputtering apparatus according to an embodiment of the present invention.

【図2】 実施例のバッキングプレートの平面図FIG. 2 is a plan view of the backing plate of the embodiment.

【図3】 従来例によるプレーナ型マグネトロンスパッ
タ装置の断面図
FIG. 3 is a sectional view of a planar type magnetron sputtering apparatus according to a conventional example.

【符号の説明】[Explanation of symbols]

1はスパッタ室 2 ガス導入口 3 スパッタ室の排気口 4 バッキングプレート本体 4A バッキングプレート本体に彫り込まれた水冷用のジ
ャケット 4B 銀ろう付けされた蓋 4C 冷却水の出入口 5 永久磁石 6 磁石室 6A 磁石室の排気口 7 モータ 8 冷却水出入口 9 ターゲット 10 サブストレート
1 is a sputter chamber 2 Gas inlet 3 Sputter chamber exhaust port 4 Backing plate body 4A Water cooling jacket carved in the backing plate body 4B Silver brazed lid 4C Cooling water inlet / outlet 5 Permanent magnet 6 Magnet chamber 6A Magnet Room exhaust port 7 Motor 8 Cooling water inlet / outlet 9 Target 10 Substrate

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 表面にスパッタ材料であるターゲット
を保持し且つ裏面に水冷用のジャケットを彫り込んだバ
ッキングプレート本体に,裏面より蓋をして該ジャケッ
ト内に冷却水を通水できるようにしたバッキングプレー
トを有することを特徴とするスパッタ装置。
1. A backing having a target, which is a sputtering material, held on the front surface and a water cooling jacket engraved on the back surface of the backing plate body, which is covered from the back surface so that cooling water can pass through the backing plate body. A sputtering apparatus having a plate.
【請求項2】 表面にターゲットを保持し且つ裏面にマ
グネトロンスパッタ用の磁石を保持する磁石室を有し,
該磁石室が気密で排気できる構造であることを特徴とす
るスパッタ装置。
2. A magnet chamber for holding a target on the front surface and a magnet for magnetron sputtering on the back surface,
A sputtering apparatus, wherein the magnet chamber is airtight and has a structure capable of being exhausted.
JP29534891A 1991-11-12 1991-11-12 Sputtering apparatus Withdrawn JPH05132774A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29534891A JPH05132774A (en) 1991-11-12 1991-11-12 Sputtering apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29534891A JPH05132774A (en) 1991-11-12 1991-11-12 Sputtering apparatus

Publications (1)

Publication Number Publication Date
JPH05132774A true JPH05132774A (en) 1993-05-28

Family

ID=17819449

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29534891A Withdrawn JPH05132774A (en) 1991-11-12 1991-11-12 Sputtering apparatus

Country Status (1)

Country Link
JP (1) JPH05132774A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5876573A (en) * 1995-07-10 1999-03-02 Cvc, Inc. High magnetic flux cathode apparatus and method for high productivity physical-vapor deposition
US6221217B1 (en) 1995-07-10 2001-04-24 Cvc, Inc. Physical vapor deposition system having reduced thickness backing plate
JP2001279434A (en) * 2000-03-29 2001-10-10 Showa Shinku:Kk External cathode electrode mounted type sputtering system
DE10216671A1 (en) * 2002-04-15 2003-12-18 Applied Films Gmbh & Co Kg coating plant
US7959776B2 (en) 2004-11-19 2011-06-14 Applied Films Gmbh & Co. Cooled backing plate for a sputtering target, and sputtering target comprising a plurality of backing plates
JP2014051746A (en) * 2002-10-24 2014-03-20 Honeywell Internatl Inc Design of target capable of increasing cooling capability and decreasing deflection and deformation and related methods for the same

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5876573A (en) * 1995-07-10 1999-03-02 Cvc, Inc. High magnetic flux cathode apparatus and method for high productivity physical-vapor deposition
US6221217B1 (en) 1995-07-10 2001-04-24 Cvc, Inc. Physical vapor deposition system having reduced thickness backing plate
JP2001279434A (en) * 2000-03-29 2001-10-10 Showa Shinku:Kk External cathode electrode mounted type sputtering system
JP4521607B2 (en) * 2000-03-29 2010-08-11 株式会社昭和真空 External cathode electrode type sputtering system
DE10216671A1 (en) * 2002-04-15 2003-12-18 Applied Films Gmbh & Co Kg coating plant
JP2014051746A (en) * 2002-10-24 2014-03-20 Honeywell Internatl Inc Design of target capable of increasing cooling capability and decreasing deflection and deformation and related methods for the same
US7959776B2 (en) 2004-11-19 2011-06-14 Applied Films Gmbh & Co. Cooled backing plate for a sputtering target, and sputtering target comprising a plurality of backing plates

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Legal Events

Date Code Title Description
A300 Withdrawal of application because of no request for examination

Free format text: JAPANESE INTERMEDIATE CODE: A300

Effective date: 19990204