JPS63143257A - Sputtering method - Google Patents
Sputtering methodInfo
- Publication number
- JPS63143257A JPS63143257A JP28982786A JP28982786A JPS63143257A JP S63143257 A JPS63143257 A JP S63143257A JP 28982786 A JP28982786 A JP 28982786A JP 28982786 A JP28982786 A JP 28982786A JP S63143257 A JPS63143257 A JP S63143257A
- Authority
- JP
- Japan
- Prior art keywords
- target
- substrate
- magnet
- film
- container
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 230000005684 electric field Effects 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims abstract description 4
- 238000000151 deposition Methods 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 20
- 239000000696 magnetic material Substances 0.000 abstract description 11
- 239000010409 thin film Substances 0.000 abstract description 10
- 239000007789 gas Substances 0.000 description 16
- 230000015572 biosynthetic process Effects 0.000 description 10
- 239000000463 material Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000009434 installation Methods 0.000 description 4
- 239000013077 target material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
基板の背面に磁石を設置して、この基板とターゲットと
を対向配置し、スパッタ用ガスを用いてターゲットの成
分を基板上に薄膜状に被着させるスパッタ方法であって
、ターゲットの背面側に軟磁性体部材を設置することで
、基板の背面の磁石から発生する磁場が、ターゲットの
背面側の軟磁性体に引きつけられるようにすることで、
ターゲットに磁性体、或いは非磁性体のいずれを用いた
場合でも、基板とターゲットとの間の空間部に均一な磁
場が形成されるようにし、基板上にスパッタにより形成
される被膜の形成速度の向上を図るようにする。[Detailed Description of the Invention] [Summary] A sputtering method in which a magnet is installed on the back side of a substrate, the substrate and a target are placed facing each other, and components of the target are deposited in a thin film on the substrate using a sputtering gas. The method includes installing a soft magnetic material member on the back side of the target so that the magnetic field generated from the magnet on the back side of the substrate is attracted to the soft magnetic material on the back side of the target.
Regardless of whether a magnetic or non-magnetic target is used, a uniform magnetic field should be formed in the space between the substrate and the target, and the formation rate of the film formed by sputtering on the substrate should be reduced. Try to improve.
本発明はスパッタ方法に係り、特にターゲットの材質に
関係なく成膜速度を向上させたスパッタ方法に関する。The present invention relates to a sputtering method, and particularly to a sputtering method that improves the film formation rate regardless of the material of the target.
薄膜磁気ヘッドを形成するための磁性膜や、該磁気ヘッ
ドのギャップ膜の形成方法として、これらの被膜の形成
材料よりなるターゲットを用いてこのターゲットの成分
をスパッタ法で基板に薄膜状に形成するスパッタ方法が
用いられている。As a method for forming a magnetic film for forming a thin-film magnetic head and a gap film for the magnetic head, a target made of a material for forming these films is used, and the components of this target are formed into a thin film on a substrate by sputtering. A sputtering method is used.
このようなスパッタ方法を用いて被膜を形成し、それを
用いて薄膜磁気ヘッドを形成する際、形成される薄膜磁
気ヘッドの製造コストの低下を図るために、成膜速度を
向上させたスパッタ法が要望され、そのスパッタ方法を
、本出願人は特開昭５９−１２６７７６号公報に於いて
既に提案している。When a film is formed using such a sputtering method and a thin-film magnetic head is formed using the film, a sputtering method that improves the film-forming speed is used in order to reduce the manufacturing cost of the thin-film magnetic head that is formed. There is a demand for this, and the applicant has already proposed a sputtering method therefor in Japanese Patent Application Laid-open No. 126776/1983.
第２図にこのような従来のスパッタ方法の説明図を示す
。FIG. 2 shows an explanatory diagram of such a conventional sputtering method.
図示するように容器１の基板設置台２には背面側に磁石
３を設けた状態でスパッタによる被膜が形成されるべき
基板４が設置され、この基板４に対向して電極（ターゲ
ット設置台）５が設置され、この電極５上にはバフキン
グプレート６を介した状態で、基板上に形成すべき薄膜
を構成する材料で形成されたターゲット７が設置されて
いる。As shown in the figure, a substrate 4 on which a film is to be formed by sputtering is installed on a substrate installation stand 2 of a container 1 with a magnet 3 provided on the back side, and an electrode (target installation stand) is placed opposite to this substrate 4. A target 7 made of a material constituting a thin film to be formed on the substrate is placed on the electrode 5 with a buffing plate 6 interposed therebetween.
この電極５の内部には図示しないが、水冷管が設置され
、バッキングプレート６を介してターゲット７を冷却し
ている。Although not shown, a water cooling pipe is installed inside the electrode 5 to cool the target 7 via the backing plate 6.
この状態で、容器１内を排気バルブ８に連なる真空ポン
プを用いて例えば１０− ’ ｔｏｒｒ程度まで排気し
た後、スパッタ用ガスとしてのアルゴン（Ａｒ）ガスを
ガス導入管９より容器１内が、１０− ” ｔｏｒｒ程
度の圧力になる迄導入する。In this state, the inside of the container 1 is evacuated to about 10-' torr using a vacuum pump connected to the exhaust valve 8, and then argon (Ar) gas as a sputtering gas is introduced into the container 1 through the gas introduction pipe 9. Introduce until the pressure reaches about 10-'' torr.
次いで基板設置台２と電極５との間に電界を印加してこ
の容器１内に導入されたＡｒガスをイオン化し、このイ
オン化したガスを用いてターゲット７を叩き、このター
ゲットより放出されるターゲット７の成分の粒子を基板
４上に付着させて薄膜を形成している。Next, an electric field is applied between the substrate mounting table 2 and the electrode 5 to ionize the Ar gas introduced into the container 1, and the ionized gas is used to hit the target 7, and the target is released from the target. Particles of component No. 7 are deposited on the substrate 4 to form a thin film.
このスパッタ時に、図示した磁石３より基板４の周囲に
磁場１０を発生させ、この磁場１０によって容器内に導
入されたＡｒガスのＡｒ分子が、ＡｒイオンとなるＡｒ
のイオン化率の向上を図り、それによって成膜速度の向
上を図るようにしている。During this sputtering, a magnetic field 10 is generated around the substrate 4 by the illustrated magnet 3, and this magnetic field 10 causes Ar molecules of the Ar gas introduced into the container to become Ar ions.
The aim is to improve the ionization rate of the film, thereby increasing the film formation rate.
更に従来、第３図に示すように、ターゲットの材料とし
て軟磁性体のターゲソ）７Ａを用いた場合、磁石３より
発生する磁場１０の分布が、基板４の周囲のみならず、
ターゲット７Ａの近傍まで広がるようになり、基板４と
ターゲット７への間の空間部の全てに分布するようにな
る。そのため容器内に導入されたＡｒガスにこの磁場８
が影響を及ぼす容積は、従来のように基板４の周辺部だ
けでなく、基板４とターゲット７＾の間の全ての空間部
に広がるようになり、そのため容器内に導入されたＡｒ
ガスのＡｒ分子のイオン化率が大となるため、それによ
って成膜速度が更に向上することが分かっている。Furthermore, conventionally, as shown in FIG. 3, when a soft magnetic material 7A is used as the target material, the distribution of the magnetic field 10 generated by the magnet 3 is not limited to the area around the substrate 4.
It spreads to the vicinity of the target 7A and is distributed throughout the space between the substrate 4 and the target 7. Therefore, this magnetic field 8 is applied to the Ar gas introduced into the container.
The volume affected by Ar is not limited to the periphery of the substrate 4 as in the past, but now extends to the entire space between the substrate 4 and the target 7^.
It has been found that since the ionization rate of Ar molecules in the gas increases, the film formation rate is further improved.
然し、第３図に示したように、ターゲットに軟磁性体の
ターゲット７Ａをを用いた場合には、基板４の背面に設
置された磁石３による磁場１０が、ターゲット７Ａと基
板４とのの間の全ての領域を覆うようになるが、ターゲ
ット７Ａに軟磁性体以外の材料のターゲットを用いた場
合には、このような磁場の広がりは見られず、そのため
容器内に導入されたＡｒガスのイオン化率も悪く、従っ
て成膜速度も向上しないといった問題点がある。However, as shown in FIG. 3, when a soft magnetic target 7A is used as the target, the magnetic field 10 generated by the magnet 3 installed on the back side of the substrate 4 causes the interaction between the target 7A and the substrate 4. However, if a target made of a material other than a soft magnetic material is used for the target 7A, such a spread of the magnetic field is not observed, and therefore the Ar gas introduced into the container There is a problem that the ionization rate is also poor, and therefore the film formation rate is not improved.
本発明のスパッタ方法は、上記した問題点を解決し、タ
ーゲットに軟磁性体以外の材料のターゲットを用いた場
合に於いても、基板の背面に設置された磁石による磁場
が、基板とターゲットの空間部の全てにわたって広がる
ようにし、それによってＡｒのイオン化率を高め、もっ
て被膜の成膜速度の向上を図るようにしたものである。The sputtering method of the present invention solves the above-mentioned problems, and even when a target made of a material other than soft magnetic material is used, the magnetic field generated by the magnet installed on the back of the substrate can be applied between the substrate and the target. It is made to spread over the entire space, thereby increasing the ionization rate of Ar and thereby improving the film formation rate.
本発明のスパッタ方法は、容器内に背面に磁石を設置し
た基板と、該基板に対向してターゲットを設け、該容器
内を排気後、該容器内にスパッタ用ガスを導入し、基板
とターゲット間に電界を印加してターゲットの成分を基
板上に被着するスバ・フタ方法に於いて、
前記ターゲットの背面に軟磁性体部材を設置した状態で
ターゲットをスパッタすることを特徴とする。In the sputtering method of the present invention, a substrate with a magnet installed on the back side and a target are provided in a container facing the substrate, and after the inside of the container is evacuated, a sputtering gas is introduced into the container, and the substrate and target are placed in a container. The sputtering method, in which target components are deposited on a substrate by applying an electric field between them, is characterized in that the target is sputtered with a soft magnetic member installed on the back surface of the target.
本発明のスパッタ方法は、ターゲットの背面側に軟磁性
体を設置することで、ターゲットに対向して設置された
基板の背面側に設置された磁石より発生する磁場がこの
軟磁性体に吸引されるようにし、この吸引された磁場が
、基板とターゲット間の空間部の全てを覆うようにして
、この磁場に依ってＡｒのイオン化率を高め、被膜の成
膜速度の向上を図るようにする。In the sputtering method of the present invention, by installing a soft magnetic material on the back side of the target, the magnetic field generated by the magnet installed on the back side of the substrate facing the target is attracted to the soft magnetic material. This magnetic field is made to cover the entire space between the substrate and the target, so that the ionization rate of Ar is increased by this magnetic field, and the film formation rate is improved. .
以下、図面を用いながら本発明の一実施例につき詳細に
説明する。Hereinafter, one embodiment of the present invention will be described in detail with reference to the drawings.
第１図は本発明の一実施例の説明図である。FIG. 1 is an explanatory diagram of an embodiment of the present invention.
図示するように、容器１１の基板設置台１２上には背面
側に永久磁石１３を設けた状態でフォトセラム等よりな
る基板１４が設置され、この基板１４に対向して電極１
５が設置され、この電極１５上にはバッキングプレート
１６を介した状態で、本発明の軟磁性部材１７と基板上
に形成すべき薄膜の構成成分より成るターゲット１８が
積層して設置されている。As shown in the figure, a substrate 14 made of photoceram or the like is installed on the substrate installation stand 12 of the container 11 with a permanent magnet 13 provided on the back side.
5 is installed, and on this electrode 15, with a backing plate 16 in between, a target 18 consisting of a soft magnetic member 17 of the present invention and a constituent of a thin film to be formed on a substrate is installed in a laminated manner. .
この軟磁性部材はニッケルー鉄（ＮｉＦｅ）合金等の材
料で形成された板状部材で、その大きさはターゲットに
等しい面積か、これより小さい面積に形成する。This soft magnetic member is a plate-shaped member made of a material such as a nickel-iron (NiFe) alloy, and its size is formed to have an area equal to or smaller than the target.
更に電極１５の内部には水冷管が設置され、バッキング
プレート１６を介して本発明の軟磁性部材１７とターゲ
ット１８を冷却している。Further, a water cooling tube is installed inside the electrode 15 to cool the soft magnetic member 17 and target 18 of the present invention via a backing plate 16.
このような状態で容器１１内を１０−’ｔｏｒｒ程度の
真空度に成る迄、排気バルブ１９に連なる真空ポンプで
排気した後、この容器１１内にスパッタ用ガスとしての
Ａｒガスを、ガス導入管２０より容器１１内の圧力が１
０−”ｔｏｒｒの真空度に成るまで導入する。In this state, the inside of the container 11 is evacuated with a vacuum pump connected to the exhaust valve 19 until a vacuum level of about 10-'torr is reached, and then Ar gas as a sputtering gas is introduced into the container 11 through a gas introduction tube. 20, the pressure inside the container 11 is 1
The system is introduced until a vacuum level of 0-''torr is reached.
一方、磁石１３より発生する磁場２１の分布は、ターゲ
ット１８の背面側に設置した本発明の軟磁性部材１７に
引きつけられ、基板１４とターゲット１８との間の空間
部の全体に広がっている。On the other hand, the distribution of the magnetic field 21 generated by the magnet 13 is attracted to the soft magnetic member 17 of the present invention installed on the back side of the target 18, and spreads throughout the space between the substrate 14 and the target 18.
そのため、容器１１内に導入されたＡｒガスのＡｒ分子
のイオン化率が向上し、このイオン化されたＡｒイオン
によってターゲットより叩き出される粒子の量が大とな
るため、基板１４上に形成される被膜の成膜速度が向上
するようになる。Therefore, the ionization rate of Ar molecules in the Ar gas introduced into the container 11 increases, and the amount of particles ejected from the target by the ionized Ar ions increases, so that a film is formed on the substrate 14. The film formation speed will be improved.
このようにすれば、用いるターゲットの材料が薄膜磁気
ヘッドのギャップ層に用いる、二酸化シリコン（５ｉ（
ｈ）やアルミナ（Ａｆ、０．）のような非磁性体になっ
た場合でも、その成膜速度は低下することは無い。In this way, the target material used can be silicon dioxide (5i), which is used for the gap layer of a thin-film magnetic head.
Even if a non-magnetic material such as h) or alumina (Af, 0.) is used, the film formation rate will not decrease.
尚、他の実施例として、軟磁性部材を設置する代わりに
直接バッキングプレートを軟磁性体材料で形成しても同
様な効果が得られる。In addition, as another embodiment, the same effect can be obtained by directly forming the backing plate from a soft magnetic material instead of installing the soft magnetic member.
以上述べたように、本発明のスパッタ方法によれば、タ
ーゲットの材料が磁性体、或いは非磁性体の如何に係わ
らず被膜の成膜速度が向上し、本発明の方法を用いると
薄膜磁気ヘッドの製造コストが低下する効果がある。As described above, according to the sputtering method of the present invention, the film formation rate is improved regardless of whether the target material is magnetic or non-magnetic. This has the effect of reducing manufacturing costs.
【図面の簡単な説明】
第１図は本発明のスパッタ方法の説明図、第２図、およ
び第３図は従来のスパッタ方法の説明図である。
図に於いて、
１１は容器、１２は基板設置台、１３は磁石、１４は基
板、１５は電極、１６はバッキングプレート、１７は軟
磁性部材、１８はターゲット、１９は排気パルプ、２゜
はガス導入管、２１は磁場を示す。
本発明−／Ｔオリ技−図
第１図BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is an explanatory diagram of the sputtering method of the present invention, and FIGS. 2 and 3 are explanatory diagrams of the conventional sputtering method. In the figure, 11 is a container, 12 is a substrate installation stand, 13 is a magnet, 14 is a substrate, 15 is an electrode, 16 is a backing plate, 17 is a soft magnetic member, 18 is a target, 19 is an exhaust pulp, and 2° is A gas introduction pipe, 21 indicates a magnetic field. The present invention-/Tori technique-Fig. 1
Claims (1)
（１４）表面に対向配置したターゲット（１８）とを、
容器（１１）内に設置し、該容器（１１）内を排気後、
該容器（１１）内にスパッタ用ガスを導入し、基板（１
４）とターゲット（１８）間に電界を印加してターゲッ
ト（１８）の成分を基板（１４）上に被着する方法に於
いて、前記ターゲット（１８）の背面に軟磁性体部材（
１７）を設置し、この状態で該ターゲット（１８）をス
パッタすることを特徴とするスパッタ方法。A substrate (14) with a magnet (13) installed on the back side, and a target (18) placed opposite to the surface of the substrate (14),
After installing it in a container (11) and evacuating the inside of the container (11),
A sputtering gas is introduced into the container (11), and a sputtering gas is introduced into the container (11).
In the method of depositing the components of the target (18) onto the substrate (14) by applying an electric field between the target (18) and the target (18), a soft magnetic member (
17) and sputtering the target (18) in this state.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28982786A JPS63143257A (en) | 1986-12-04 | 1986-12-04 | Sputtering method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28982786A JPS63143257A (en) | 1986-12-04 | 1986-12-04 | Sputtering method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63143257A true JPS63143257A (en) | 1988-06-15 |
Family
ID=17748283
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28982786A Pending JPS63143257A (en) | 1986-12-04 | 1986-12-04 | Sputtering method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63143257A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103014632A (en) * | 2011-09-26 | 2013-04-03 | 中国科学院金属研究所 | Arc ion iron plating magnetic composite structural target and application thereof |
-
1986
- 1986-12-04 JP JP28982786A patent/JPS63143257A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103014632A (en) * | 2011-09-26 | 2013-04-03 | 中国科学院金属研究所 | Arc ion iron plating magnetic composite structural target and application thereof |
| CN103014632B (en) * | 2011-09-26 | 2015-12-09 | 中国科学院金属研究所 | A kind of arc ion plating ferromagnetic composite structure target material and application thereof |
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