JPH06116725A - Magnetron sputtering device - Google Patents

Abstract

PURPOSE:To prevent the eccentricity of the erosion regions of targets and to improve the film thickness distribution of thin films by preventing the interference of magnetic fields by magnetic devices with each other, thereby enabling uniform sputtering. CONSTITUTION:Plasma is generated by the discharge between an anode which is a substrate holder 5 and cathodes which are backing plates 2 and the targets 3. This plasma is confined by the magnetic fields formed in the spaces near the surfaces of the targets 3 and the density thereof is increased near the surfaces of the targets 3. The respective targets 3 are sputtered by the ions in the high-density plasma. The sputtered target particles stick to substrates by passing the target particle passage holes of deposition preventive plates 7 in common use as magnetic shields, by which the thin films are formed thereon.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetron sputtering apparatus having a plurality of cathodes.

[0002]

2. Description of the Related Art Generally, a magnetron sputtering apparatus has a principle structure in which a magnet device is arranged on the back surface of a backing plate having a target mounted on the front surface thereof, and the magnet device thus arranged is curved in a space near the surface of the target. While forming a magnetic field, a negative voltage is applied to the backing plate to make the backing plate and the target a cathode, and due to the action of the curved magnetic field, a high density plasma is generated in the space near the surface of the target. The target is sputtered with ions in a plasma of high density. The sputtered target particles adhere to the substrate and a thin film is formed on the substrate.

The principle configuration of the magnetron sputtering apparatus is as described above. However, when a thin film is simultaneously formed on a plurality of substrates arranged side by side at a predetermined interval on one substrate holder, the conventional magnetron sputtering apparatus is The same number of targets are arranged at positions facing the substrate. Therefore, the target and the magnet device are arranged in parallel at a predetermined interval like the substrate.

[0004]

In the conventional magnetron sputtering apparatus, as many targets as the plurality of substrates arranged side by side at a predetermined interval in one substrate holder as described above are arranged at positions facing the substrates, The magnet devices were also arranged in parallel at a predetermined interval. In that case, a magnetic field is formed in the space near the surface of the target by the magnet device, but the magnetic field interferes due to the influence of the magnetic field of the adjacent magnet device. As a result, uniform sputtering cannot be performed, the erosion region of the target is eccentric, and the film thickness distribution of the thin film formed on the substrate is disturbed.

An object of the present invention is to solve the above problems and
(EN) A magnetron sputtering apparatus capable of preventing magnetic field interference between magnet apparatuses to enable uniform sputtering, prevent eccentricity of an erosion region of a target, and improve a film thickness distribution of a thin film.

[0006]

In order to achieve the above object, the present invention arranges as many targets as a plurality of substrates arranged in parallel at a predetermined interval in one substrate holder at a position facing the substrate, Also, a magnet device is arranged for each target on the back surface of the backing plate with the target attached to the front surface, and a curved magnetic field is formed in the space near the surface of the target by the magnet device, and a negative voltage is applied to the backing plate. Is applied to form a cathode, a high-density plasma is generated in the space near the surface of the target by the action of the magnetic field, and the curved magnetron sputtering device is used to sputter the target with the ions in the high-density plasma. In the space near the surface of the target where the magnetic field is formed, the target particle passage hole is located at a position facing each target. The deposition preventing plate also serves as a magnetic shield having, is characterized in that it has arranged to face the target.

[0007]

In the present invention, since the deposition preventing plate which also serves as the magnetic shield is arranged in the space near the surface of the target where the curved magnetic field is formed so as to face each target, the backing plate The magnetic field generated by the magnet device arranged on the back surface for each target is prevented from spreading to the outside by the adhesion preventing plate that also serves as the magnetic shield, and the magnetic field interference between the magnet devices is prevented.

[0008]

Embodiments of the present invention will be described below with reference to the drawings. A magnetron sputtering apparatus according to an embodiment of the present invention is shown in FIGS. 1, 2 and 3, and in these figures, 1 is a sputtering chamber. The target 3 is attached to the front surface of the backing plate 2, but the magnet device 4 is attached to the back surface of the backing plate 2. Therefore, the magnet device 4 forms a curved magnetic field in the space near the surface of the target 3. Although not shown in the drawing, a negative voltage is applied to the backing plate 2 and the backing plate 2 and the target 3
Is the cathode. A plurality of substrates (not shown) are arranged side by side at a predetermined interval on one substrate holder 5 serving as an anode, and the same number of targets 3 as the substrates face this. In the space near the surface of the target 3 where a curved magnetic field is formed, there is a target particle passage hole 6 at a position facing each target 3 and also used as a magnetic shield formed of a magnetic material such as SUS430. The deposition prevention plate 7 is disposed so as to face each target 3. The anti-adhesion plate 7 is a partition plate 7 that partitions the adjacent targets 3 from each other.
a. The magnet device 4 is arranged for each target, and the targets 3 are arranged opposite to each other on both sides of the substrate holder 5.

In such an embodiment, plasma is generated by discharge between the anode, which is the substrate holder 5, and the cathode of the backing plate 2 and the target 3. The plasma is a space near the surface of the target 3. Is confined by the magnetic field formed in the target 3 and has a high density in the space near the surface of the target 3. Then, each target 3 is sputtered by the ions in the high-density plasma. The sputtered target particles pass through the target particle passage hole 6 of the deposition preventive plate 7 that also serves as a magnetic shield, and adhere to the substrate.
A thin film will be formed there.

In this case, in the embodiment, the deposition preventive plate 7 also serving as a magnetic shield is arranged in the space near the surface of the target 3 where a curved magnetic field is formed so as to face each target 3. Therefore, the magnetic field generated by the magnet device 4 arranged for each target 3 on the back surface of the backing plate 2 is prevented from spreading to the outside by the adhesion preventing plate 7 that also serves as the magnetic shield, and the magnetic field interference between the magnet devices 4 is prevented. Become so.

By the way, in the above-mentioned embodiment, the targets 3 are arranged facing both sides of the substrate holder 5, but instead, the targets 3 are arranged facing only one side of the substrate holder 5. May be In addition, the deposition prevention plate 7
May not include the partition plate 7a.

[0012]

According to the present invention, since the anti-adhesion plate also serving as the magnetic shield is disposed in the space near the surface of the target where the curved magnetic field is formed so as to face each target, the backing is performed. The magnetic field by the magnet device arranged for each target on the back surface of the plate does not spread to the outside due to the adhesion prevention plate that also serves as the magnetic shield,
Magnetic field interference between the magnet devices is prevented. Therefore, uniform sputtering is possible, eccentricity of the erosion region of the target is prevented, and the film thickness distribution of the thin film can be improved.

[Brief description of drawings]

FIG. 1 is a side view of an embodiment of the present invention.

FIG. 2 is a plan view of an embodiment of the present invention.

FIG. 3 is a view seen from the line AA of FIG.

[Explanation of symbols]

 1 ・ ・ Sputtering chamber 2 ・ ・ ・ ・ ・ ・ Backing plate 3 ・ ・ ・ ・ Target 4 ・ ・ ・ ・ Magnetic device 5 ・ ・ ・ ・ Substrate holder 6 ・ ・ ・ ・ ・・ Target particle passage hole 7 ・ ・ ・ Adhesion prevention plate 7a ・ ・ ・ Partition plate

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Hiroyuki Hirano 2500 Hagizono, Chigasaki City, Kanagawa Japan Vacuum Technology Co., Ltd.

Claims (1)

[Claims] 1. A magnet device is provided on a back surface of a backing plate having a plurality of substrates arranged in parallel on one substrate holder at a predetermined interval and having the same number of targets as opposed to the substrates and having the targets mounted on the front surface. Is arranged for each target, and the magnet device of the target forms a curved magnetic field in the space near the surface of the target, and a negative voltage is applied to the backing plate to form a cathode. In a space near the surface of the target in which a curved magnetic field is formed in a magnetron sputtering apparatus that generates a high-density plasma in the space near the surface of the target and sputters the target with the ions in the high-density plasma. Attach the anti-adhesion plate that has a target particle passage hole at a position facing Magnetron sputtering apparatus, characterized in that arranged so as to face the.