JPS53119671A - Ion implanting method - Google Patents

Ion implanting method

Info

Publication number
JPS53119671A
JPS53119671A JP3425077A JP3425077A JPS53119671A JP S53119671 A JPS53119671 A JP S53119671A JP 3425077 A JP3425077 A JP 3425077A JP 3425077 A JP3425077 A JP 3425077A JP S53119671 A JPS53119671 A JP S53119671A
Authority
JP
Japan
Prior art keywords
ion implanting
implanting method
ion beam
substrate
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3425077A
Other languages
Japanese (ja)
Inventor
Tomoyasu Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3425077A priority Critical patent/JPS53119671A/en
Publication of JPS53119671A publication Critical patent/JPS53119671A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To obtain an implanted ion distribution uniform in face and depth directions by rotating a single crystal substrate while tilting its crystal axis at 0.5 to 10 deg. with respect to an ion beam at the time of implanting ions to the substrate by radiating the ion beam thereto.
JP3425077A 1977-03-28 1977-03-28 Ion implanting method Pending JPS53119671A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3425077A JPS53119671A (en) 1977-03-28 1977-03-28 Ion implanting method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3425077A JPS53119671A (en) 1977-03-28 1977-03-28 Ion implanting method

Publications (1)

Publication Number Publication Date
JPS53119671A true JPS53119671A (en) 1978-10-19

Family

ID=12408911

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3425077A Pending JPS53119671A (en) 1977-03-28 1977-03-28 Ion implanting method

Country Status (1)

Country Link
JP (1) JPS53119671A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61142752A (en) * 1984-12-14 1986-06-30 Nec Corp Wafer holder of ion implanting apparatus
JPS61208738A (en) * 1985-03-11 1986-09-17 Sharp Corp Ion implanting apparatus
JPS62281247A (en) * 1986-05-28 1987-12-07 Tokyo Electron Ltd Ion implanter
JPS62281248A (en) * 1986-05-28 1987-12-07 Tokyo Electron Ltd Ion implantation method
JPS63218140A (en) * 1987-03-06 1988-09-12 Nec Yamagata Ltd Ion implanting apparatus
US5047359A (en) * 1985-12-17 1991-09-10 Mitsubishi Denki Kabushiki Kaisha Method of implanting into the sidewall of a trench by rotating the wafer
JP2000164525A (en) * 1998-11-30 2000-06-16 Denso Corp Silicon carbide semiconductor device and manufacture thereof

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61142752A (en) * 1984-12-14 1986-06-30 Nec Corp Wafer holder of ion implanting apparatus
JPS61208738A (en) * 1985-03-11 1986-09-17 Sharp Corp Ion implanting apparatus
US5047359A (en) * 1985-12-17 1991-09-10 Mitsubishi Denki Kabushiki Kaisha Method of implanting into the sidewall of a trench by rotating the wafer
JPS62281247A (en) * 1986-05-28 1987-12-07 Tokyo Electron Ltd Ion implanter
JPS62281248A (en) * 1986-05-28 1987-12-07 Tokyo Electron Ltd Ion implantation method
JPS63218140A (en) * 1987-03-06 1988-09-12 Nec Yamagata Ltd Ion implanting apparatus
JP2000164525A (en) * 1998-11-30 2000-06-16 Denso Corp Silicon carbide semiconductor device and manufacture thereof

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