JPS53119671A - Ion implanting method - Google Patents
Ion implanting methodInfo
- Publication number
- JPS53119671A JPS53119671A JP3425077A JP3425077A JPS53119671A JP S53119671 A JPS53119671 A JP S53119671A JP 3425077 A JP3425077 A JP 3425077A JP 3425077 A JP3425077 A JP 3425077A JP S53119671 A JPS53119671 A JP S53119671A
- Authority
- JP
- Japan
- Prior art keywords
- ion implanting
- implanting method
- ion beam
- substrate
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To obtain an implanted ion distribution uniform in face and depth directions by rotating a single crystal substrate while tilting its crystal axis at 0.5 to 10 deg. with respect to an ion beam at the time of implanting ions to the substrate by radiating the ion beam thereto.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3425077A JPS53119671A (en) | 1977-03-28 | 1977-03-28 | Ion implanting method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3425077A JPS53119671A (en) | 1977-03-28 | 1977-03-28 | Ion implanting method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS53119671A true JPS53119671A (en) | 1978-10-19 |
Family
ID=12408911
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3425077A Pending JPS53119671A (en) | 1977-03-28 | 1977-03-28 | Ion implanting method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53119671A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61142752A (en) * | 1984-12-14 | 1986-06-30 | Nec Corp | Wafer holder of ion implanting apparatus |
JPS61208738A (en) * | 1985-03-11 | 1986-09-17 | Sharp Corp | Ion implanting apparatus |
JPS62281247A (en) * | 1986-05-28 | 1987-12-07 | Tokyo Electron Ltd | Ion implanter |
JPS62281248A (en) * | 1986-05-28 | 1987-12-07 | Tokyo Electron Ltd | Ion implantation method |
JPS63218140A (en) * | 1987-03-06 | 1988-09-12 | Nec Yamagata Ltd | Ion implanting apparatus |
US5047359A (en) * | 1985-12-17 | 1991-09-10 | Mitsubishi Denki Kabushiki Kaisha | Method of implanting into the sidewall of a trench by rotating the wafer |
JP2000164525A (en) * | 1998-11-30 | 2000-06-16 | Denso Corp | Silicon carbide semiconductor device and manufacture thereof |
-
1977
- 1977-03-28 JP JP3425077A patent/JPS53119671A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61142752A (en) * | 1984-12-14 | 1986-06-30 | Nec Corp | Wafer holder of ion implanting apparatus |
JPS61208738A (en) * | 1985-03-11 | 1986-09-17 | Sharp Corp | Ion implanting apparatus |
US5047359A (en) * | 1985-12-17 | 1991-09-10 | Mitsubishi Denki Kabushiki Kaisha | Method of implanting into the sidewall of a trench by rotating the wafer |
JPS62281247A (en) * | 1986-05-28 | 1987-12-07 | Tokyo Electron Ltd | Ion implanter |
JPS62281248A (en) * | 1986-05-28 | 1987-12-07 | Tokyo Electron Ltd | Ion implantation method |
JPS63218140A (en) * | 1987-03-06 | 1988-09-12 | Nec Yamagata Ltd | Ion implanting apparatus |
JP2000164525A (en) * | 1998-11-30 | 2000-06-16 | Denso Corp | Silicon carbide semiconductor device and manufacture thereof |
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