DE3852979D1 - Verfahren und Vorrichtung zur Herstellung supraleitender Dünnschichten. - Google Patents
Verfahren und Vorrichtung zur Herstellung supraleitender Dünnschichten.Info
- Publication number
- DE3852979D1 DE3852979D1 DE3852979T DE3852979T DE3852979D1 DE 3852979 D1 DE3852979 D1 DE 3852979D1 DE 3852979 T DE3852979 T DE 3852979T DE 3852979 T DE3852979 T DE 3852979T DE 3852979 D1 DE3852979 D1 DE 3852979D1
- Authority
- DE
- Germany
- Prior art keywords
- thin films
- superconducting thin
- producing superconducting
- producing
- films
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0026—Activation or excitation of reactive gases outside the coating chamber
- C23C14/0031—Bombardment of substrates by reactive ion beams
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/087—Oxides of copper or solid solutions thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/408—Oxides of copper or solid solutions thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
- C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
- C23C4/11—Oxides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0492—Processes for depositing or forming copper oxide superconductor layers by thermal spraying, e.g. plasma deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0548—Processes for depositing or forming copper oxide superconductor layers by deposition and subsequent treatment, e.g. oxidation of pre-deposited material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
- Y10S505/73—Vacuum treating or coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
- Y10S505/73—Vacuum treating or coating
- Y10S505/732—Evaporative coating with superconducting material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/786—Manufacturing system or apparatus for making high temperature, i.e. tc greater than 30 k superconductor product, device, article or stock, i.e. which system or apparatus does not itself contain a superconducting component
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Oxygen, Ozone, And Oxides In General (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19618687 | 1987-08-07 | ||
JP62251497A JP2539458B2 (ja) | 1987-10-07 | 1987-10-07 | 超電導薄膜の製造方法及び装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3852979D1 true DE3852979D1 (de) | 1995-03-23 |
DE3852979T2 DE3852979T2 (de) | 1995-05-24 |
Family
ID=26509600
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3852979T Expired - Fee Related DE3852979T2 (de) | 1987-08-07 | 1988-08-04 | Verfahren und Vorrichtung zur Herstellung supraleitender Dünnschichten. |
Country Status (4)
Country | Link |
---|---|
US (2) | US4950642A (de) |
EP (1) | EP0302506B1 (de) |
KR (1) | KR910007382B1 (de) |
DE (1) | DE3852979T2 (de) |
Families Citing this family (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH075435B2 (ja) * | 1987-03-31 | 1995-01-25 | 住友電気工業株式会社 | 超電導薄膜の製造方法及び装置 |
EP0288711B1 (de) * | 1987-04-28 | 1995-02-22 | International Business Machines Corporation | Schnelle grossflächige Beschichtung aus Supraleitern mit hoher Sprungtemperatur |
JP2557486B2 (ja) * | 1987-08-20 | 1996-11-27 | 住友電気工業株式会社 | 超電導セラミックス長尺体の製造方法および超電導セラミックス長尺体 |
EP0431160B1 (de) * | 1988-03-16 | 1995-05-17 | Kabushiki Kaisha Toshiba | VERFAHREN ZUR HERSTELLUNG EINES DüNNSCHICHTOXYDSUPRALEITERS |
JPH04500198A (ja) * | 1988-08-19 | 1992-01-16 | リージェンツ・オブ・ザ・ユニバーシティ・オブ・ミネソタ | オゾンを用いた超電導セラミック酸化物の調製 |
DE68909395T2 (de) * | 1989-02-10 | 1994-02-17 | Toshiba Kawasaki Kk | Verfahren zur Ablagerung eines dünnen Oxydfilms. |
DE3923008A1 (de) * | 1989-07-12 | 1991-01-17 | Hoechst Ag | Verfahren zur herstellung oxidkeramischer formkoerper durch thermisches spritzen |
DE3927168A1 (de) * | 1989-08-17 | 1991-02-21 | Hoechst Ag | Verfahren zum thermischen spritzen von oxidkeramischen supraleitenden materialien |
US4987102A (en) * | 1989-12-04 | 1991-01-22 | Motorola, Inc. | Process for forming high purity thin films |
WO1991014028A1 (en) * | 1990-03-16 | 1991-09-19 | Conductus, Inc. | High temperature superconducting films on aluminum oxide substrates |
EP0456600A1 (de) * | 1990-05-11 | 1991-11-13 | Plasma-Invent Ag | Verfahren zum Herstellen von dünnen Schichten aus supraleitender Mischkeramik |
JPH04219301A (ja) * | 1990-07-25 | 1992-08-10 | Semiconductor Energy Lab Co Ltd | 酸化物超伝導薄膜の作製方法 |
EP0553295A1 (de) * | 1990-10-16 | 1993-08-04 | Superconductor Technologies Inc. | In situ wachstum supraleitender filme |
US5707692A (en) * | 1990-10-23 | 1998-01-13 | Canon Kabushiki Kaisha | Apparatus and method for processing a base substance using plasma and a magnetic field |
US5779802A (en) * | 1990-12-10 | 1998-07-14 | Imec V.Z.W. | Thin film deposition chamber with ECR-plasma source |
DE4108001C1 (de) * | 1991-03-13 | 1992-07-09 | Forschungszentrum Juelich Gmbh, 5170 Juelich, De | |
US5633192A (en) * | 1991-03-18 | 1997-05-27 | Boston University | Method for epitaxially growing gallium nitride layers |
US7235819B2 (en) * | 1991-03-18 | 2007-06-26 | The Trustees Of Boston University | Semiconductor device having group III nitride buffer layer and growth layers |
JPH0788578B2 (ja) * | 1991-07-10 | 1995-09-27 | 財団法人国際超電導産業技術研究センター | 酸化物薄膜の製造方法および装置 |
JPH0570931A (ja) * | 1991-09-11 | 1993-03-23 | Canon Inc | 真空蒸着装置および防着板 |
JPH069297A (ja) * | 1991-12-09 | 1994-01-18 | Sumitomo Electric Ind Ltd | 成膜装置 |
WO1993013240A1 (en) * | 1991-12-23 | 1993-07-08 | Prince John H | System for depositing superconducting films |
ATE171732T1 (de) * | 1992-07-02 | 1998-10-15 | Balzers Hochvakuum | Verfahren zur herstellung einer metalloxidschicht, vakuumbehandlungsanlage hierfür sowie mit mindestens einer metalloxidschicht beschichteter teil |
JP3008970B2 (ja) * | 1993-07-27 | 2000-02-14 | 財団法人国際超電導産業技術研究センター | Y123型結晶構造を有する酸化物結晶膜 |
FR2695944B1 (fr) * | 1992-09-24 | 1994-11-18 | Onera (Off Nat Aerospatiale) | Appareil de dépôt chimique en phase vapeur activé par un plasma micro-ondes. |
AU8070294A (en) * | 1993-07-15 | 1995-02-13 | President And Fellows Of Harvard College | Extended nitride material comprising beta -c3n4 |
JPH07133192A (ja) * | 1993-11-04 | 1995-05-23 | Sumitomo Electric Ind Ltd | 成膜装置および成膜方法 |
US5399388A (en) * | 1994-02-28 | 1995-03-21 | The United States Of America As Represented By The Secretary Of The Navy | Method of forming thin films on substrates at low temperatures |
US6270861B1 (en) * | 1994-07-21 | 2001-08-07 | Ut, Battelle Llc | Individually controlled environments for pulsed addition and crystallization |
US5458686A (en) * | 1995-03-03 | 1995-10-17 | Neocera, Inc. | Pulsed laser passive filter deposition system |
US5637146A (en) * | 1995-03-30 | 1997-06-10 | Saturn Cosmos Co., Ltd. | Method for the growth of nitride based semiconductors and its apparatus |
DE19540543A1 (de) * | 1995-10-31 | 1997-05-07 | Leybold Ag | Vorrichtung zum Beschichten eines Substrats mit Hilfe des Chemical-Vapor-Deposition-Verfahrens |
IL117657A0 (en) * | 1996-03-26 | 1996-07-23 | Technion Res & Dev Foundation | Ceramic target for thin film deposition |
EP0816292B1 (de) * | 1996-06-27 | 2000-01-05 | The Honjo Chemical Corporation | Verfahren zur Herstellung von Lithium-Mangan-Oxid mit Spinelstruktur |
US5849371A (en) * | 1996-07-22 | 1998-12-15 | Beesley; Dwayne | Laser and laser-assisted free electron beam deposition apparatus and method |
JP2003158308A (ja) * | 2001-11-22 | 2003-05-30 | Communication Research Laboratory | 超伝導材料の製造方法 |
FR2840925B1 (fr) * | 2002-06-18 | 2005-04-01 | Riber | Chambre d'evaporation de materiaux sous vide a pompage differentiel |
JP4474506B2 (ja) * | 2004-04-12 | 2010-06-09 | 財団法人北九州産業学術推進機構 | マイクロ波を用いた減圧乾燥方法及びその装置 |
US9343289B2 (en) | 2012-07-27 | 2016-05-17 | Applied Materials, Inc. | Chemistry compatible coating material for advanced device on-wafer particle performance |
US10060048B2 (en) * | 2012-10-25 | 2018-08-28 | Wetling Ip Ccg Ltd | Method for preparing high quality crystals by directing ionized gas molecules through and/or over a saturated solution comprising a protein |
KR102270772B1 (ko) | 2020-06-23 | 2021-06-28 | 김의택 | 근력강화 운동기구 |
KR102455185B1 (ko) | 2021-06-21 | 2022-10-17 | 김의택 | 근력강화 운동기구 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4268711A (en) * | 1979-04-26 | 1981-05-19 | Optical Coating Laboratory, Inc. | Method and apparatus for forming films from vapors using a contained plasma source |
US4336277A (en) * | 1980-09-29 | 1982-06-22 | The Regents Of The University Of California | Transparent electrical conducting films by activated reactive evaporation |
GB2085482B (en) * | 1980-10-06 | 1985-03-06 | Optical Coating Laboratory Inc | Forming thin film oxide layers using reactive evaporation techniques |
US4483725A (en) * | 1982-09-30 | 1984-11-20 | At&T Bell Laboratories | Reactive vapor deposition of multiconstituent material |
US4514437A (en) * | 1984-05-02 | 1985-04-30 | Energy Conversion Devices, Inc. | Apparatus for plasma assisted evaporation of thin films and corresponding method of deposition |
US4888202A (en) * | 1986-07-31 | 1989-12-19 | Nippon Telegraph And Telephone Corporation | Method of manufacturing thin compound oxide film and apparatus for manufacturing thin oxide film |
US4793908A (en) * | 1986-12-29 | 1988-12-27 | Rockwell International Corporation | Multiple ion source method and apparatus for fabricating multilayer optical films |
JP2711253B2 (ja) * | 1987-03-18 | 1998-02-10 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 超伝導膜及びその形成方法 |
EP0292382B1 (de) * | 1987-05-18 | 1994-09-14 | Sumitomo Electric Industries Limited | Verfahren zur Herstellung eines supraleitenden Materials des Oxydverbundtyps |
EP0292958B1 (de) * | 1987-05-26 | 1993-12-29 | Sumitomo Electric Industries Limited | Verfahren zur Herstellung einer dünnen Schicht aus supraleitendem Mischoxid |
EP0365533A1 (de) * | 1987-06-12 | 1990-05-02 | Siemens Aktiengesellschaft | Verfahren zur herstellung von leiterbereichen aus einem oxidkeramischen supraleitermaterial hoher sprungtemperatur |
FR2617645B1 (fr) * | 1987-07-03 | 1989-10-20 | Thomson Csf | Dispositif en materiau supraconducteur et procede de realisation |
-
1988
- 1988-08-01 KR KR1019880009830A patent/KR910007382B1/ko not_active IP Right Cessation
- 1988-08-04 EP EP88112744A patent/EP0302506B1/de not_active Expired - Lifetime
- 1988-08-04 DE DE3852979T patent/DE3852979T2/de not_active Expired - Fee Related
- 1988-08-05 US US07/228,750 patent/US4950642A/en not_active Expired - Fee Related
-
1990
- 1990-07-24 US US07/560,844 patent/US5316585A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5316585A (en) | 1994-05-31 |
EP0302506A2 (de) | 1989-02-08 |
US4950642A (en) | 1990-08-21 |
KR910007382B1 (ko) | 1991-09-25 |
DE3852979T2 (de) | 1995-05-24 |
EP0302506B1 (de) | 1995-02-08 |
EP0302506A3 (en) | 1990-05-16 |
KR890004447A (ko) | 1989-04-22 |
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