DE68909395T2 - Verfahren zur Ablagerung eines dünnen Oxydfilms. - Google Patents
Verfahren zur Ablagerung eines dünnen Oxydfilms.Info
- Publication number
- DE68909395T2 DE68909395T2 DE89313578T DE68909395T DE68909395T2 DE 68909395 T2 DE68909395 T2 DE 68909395T2 DE 89313578 T DE89313578 T DE 89313578T DE 68909395 T DE68909395 T DE 68909395T DE 68909395 T2 DE68909395 T2 DE 68909395T2
- Authority
- DE
- Germany
- Prior art keywords
- deposition
- oxide film
- thin oxide
- thin
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000008021 deposition Effects 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/408—Oxides of copper or solid solutions thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0436—Processes for depositing or forming copper oxide superconductor layers by chemical vapour deposition [CVD]
- H10N60/0464—Processes for depositing or forming copper oxide superconductor layers by chemical vapour deposition [CVD] by metalloorganic chemical vapour deposition [MOCVD]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
- Y10S505/73—Vacuum treating or coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
- Y10S505/734—From organometallic precursors, e.g. acetylacetonates
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1031329A JPH02210718A (ja) | 1989-02-10 | 1989-02-10 | 酸化物超伝導体の気相成長方法 |
JP3132889A JPH02210822A (ja) | 1989-02-10 | 1989-02-10 | 気相成長装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68909395D1 DE68909395D1 (de) | 1993-10-28 |
DE68909395T2 true DE68909395T2 (de) | 1994-02-17 |
Family
ID=26369777
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE89313578T Expired - Fee Related DE68909395T2 (de) | 1989-02-10 | 1989-12-22 | Verfahren zur Ablagerung eines dünnen Oxydfilms. |
Country Status (3)
Country | Link |
---|---|
US (1) | US5164363A (de) |
EP (1) | EP0387456B1 (de) |
DE (1) | DE68909395T2 (de) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3124376B2 (ja) * | 1992-06-17 | 2001-01-15 | 株式会社東芝 | 化合物半導体の気相成長装置 |
US5458086A (en) * | 1993-10-13 | 1995-10-17 | Superconductor Technologies, Inc. | Apparatus for growing metal oxides using organometallic vapor phase epitaxy |
JP3152859B2 (ja) * | 1994-09-16 | 2001-04-03 | 株式会社東芝 | 半導体装置の製造方法 |
US6071572A (en) * | 1996-10-15 | 2000-06-06 | Applied Materials, Inc. | Forming tin thin films using remote activated specie generation |
NL1004867C2 (nl) * | 1996-12-20 | 1998-06-23 | Tno | Met vezels versterkt bio-keramisch composietmateriaal. |
US6248392B1 (en) | 1996-12-20 | 2001-06-19 | Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Ondersoek Tno | Method for manufacturing a fiber-reinforced bioactive ceramic implant |
DE19730119A1 (de) * | 1997-07-14 | 1999-01-21 | Siemens Ag | Verfahren zur Herstellung von Dünnfilmen aus oxidischer Keramik |
US6943392B2 (en) * | 1999-08-30 | 2005-09-13 | Micron Technology, Inc. | Capacitors having a capacitor dielectric layer comprising a metal oxide having multiple different metals bonded with oxygen |
US6558517B2 (en) * | 2000-05-26 | 2003-05-06 | Micron Technology, Inc. | Physical vapor deposition methods |
US6838122B2 (en) * | 2001-07-13 | 2005-01-04 | Micron Technology, Inc. | Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers |
US20030017266A1 (en) * | 2001-07-13 | 2003-01-23 | Cem Basceri | Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers, including such layers having a varied concentration of barium and strontium within the layer |
US7011978B2 (en) | 2001-08-17 | 2006-03-14 | Micron Technology, Inc. | Methods of forming capacitor constructions comprising perovskite-type dielectric materials with different amount of crystallinity regions |
TWI236505B (en) * | 2002-01-14 | 2005-07-21 | Nat Science Council | Thermal cracking chemical vapor deposition process for nanocarbonaceous material |
JP4690246B2 (ja) * | 2006-05-19 | 2011-06-01 | 住友電気工業株式会社 | 超電導薄膜材料およびその製造方法 |
US7879401B2 (en) * | 2006-12-22 | 2011-02-01 | The Regents Of The University Of Michigan | Organic vapor jet deposition using an exhaust |
US8741158B2 (en) | 2010-10-08 | 2014-06-03 | Ut-Battelle, Llc | Superhydrophobic transparent glass (STG) thin film articles |
US20110034338A1 (en) * | 2009-08-04 | 2011-02-10 | Amit Goyal | CRITICAL CURRENT DENSITY ENHANCEMENT VIA INCORPORATION OF NANOSCALE Ba2(Y,RE)TaO6 IN REBCO FILMS |
WO2011017439A1 (en) * | 2009-08-04 | 2011-02-10 | Ut-Battelle, Llc | Critical current density enhancement via incorporation of nanoscale ba2renbo6 in rebco films |
US8685549B2 (en) | 2010-08-04 | 2014-04-01 | Ut-Battelle, Llc | Nanocomposites for ultra high density information storage, devices including the same, and methods of making the same |
US11292919B2 (en) | 2010-10-08 | 2022-04-05 | Ut-Battelle, Llc | Anti-fingerprint coatings |
US9221076B2 (en) | 2010-11-02 | 2015-12-29 | Ut-Battelle, Llc | Composition for forming an optically transparent, superhydrophobic coating |
US8748350B2 (en) | 2011-04-15 | 2014-06-10 | Ut-Battelle | Chemical solution seed layer for rabits tapes |
US8748349B2 (en) | 2011-04-15 | 2014-06-10 | Ut-Battelle, Llc | Buffer layers for REBCO films for use in superconducting devices |
US20150239773A1 (en) | 2014-02-21 | 2015-08-27 | Ut-Battelle, Llc | Transparent omniphobic thin film articles |
FR3018825B1 (fr) * | 2014-03-21 | 2017-09-01 | Altatech Semiconductor | Procede de depot en phase gazeuse |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2162862B (en) * | 1984-07-26 | 1988-10-19 | Japan Res Dev Corp | A method of growing a thin film single crystalline semiconductor |
JPH0651909B2 (ja) * | 1985-12-28 | 1994-07-06 | キヤノン株式会社 | 薄膜多層構造の形成方法 |
US4761269A (en) * | 1986-06-12 | 1988-08-02 | Crystal Specialties, Inc. | Apparatus for depositing material on a substrate |
JPS63292524A (ja) * | 1987-05-25 | 1988-11-29 | Matsushita Electric Ind Co Ltd | 超電導薄膜の製造方法 |
JPS63307275A (ja) * | 1987-06-05 | 1988-12-14 | Kawasaki Steel Corp | 高温超伝導体薄膜作製用のmocvd装置 |
KR910007382B1 (ko) * | 1987-08-07 | 1991-09-25 | 가부시기가이샤 히다찌세이사꾸쇼 | 초전도 재료 및 초전도 박막의 제조방법 |
-
1989
- 1989-12-22 DE DE89313578T patent/DE68909395T2/de not_active Expired - Fee Related
- 1989-12-22 EP EP89313578A patent/EP0387456B1/de not_active Expired - Lifetime
-
1991
- 1991-05-15 US US07/701,587 patent/US5164363A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0387456A2 (de) | 1990-09-19 |
US5164363A (en) | 1992-11-17 |
EP0387456B1 (de) | 1993-09-22 |
EP0387456A3 (en) | 1990-11-28 |
DE68909395D1 (de) | 1993-10-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) | ||
8339 | Ceased/non-payment of the annual fee |