EP0387456A3 - Method and apparatus for vapor-phase growth of an oxide thin film - Google Patents

Method and apparatus for vapor-phase growth of an oxide thin film Download PDF

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Publication number
EP0387456A3
EP0387456A3 EP19890313578 EP89313578A EP0387456A3 EP 0387456 A3 EP0387456 A3 EP 0387456A3 EP 19890313578 EP19890313578 EP 19890313578 EP 89313578 A EP89313578 A EP 89313578A EP 0387456 A3 EP0387456 A3 EP 0387456A3
Authority
EP
European Patent Office
Prior art keywords
vapor
thin film
oxide thin
phase growth
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP19890313578
Other versions
EP0387456B1 (en
EP0387456A2 (en
Inventor
Kazuhiro C/O Intellectual Property Div. Eguchi
Takatosi C/O Intellectual Property Div. Nakanisi
Rie C/O Intellectual Property Division Satoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1031329A external-priority patent/JPH02210718A/en
Priority claimed from JP3132889A external-priority patent/JPH02210822A/en
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of EP0387456A2 publication Critical patent/EP0387456A2/en
Publication of EP0387456A3 publication Critical patent/EP0387456A3/en
Application granted granted Critical
Publication of EP0387456B1 publication Critical patent/EP0387456B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/408—Oxides of copper or solid solutions thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0436—Processes for depositing or forming copper oxide superconductor layers by chemical vapour deposition [CVD]
    • H10N60/0464—Processes for depositing or forming copper oxide superconductor layers by chemical vapour deposition [CVD] by metalloorganic chemical vapour deposition [MOCVD]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73—Vacuum treating or coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/734—From organometallic precursors, e.g. acetylacetonates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Vapour Deposition (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
EP89313578A 1989-02-10 1989-12-22 Method for vapor-phase growth of an oxide thin film Expired - Lifetime EP0387456B1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP1031329A JPH02210718A (en) 1989-02-10 1989-02-10 Gaseous phase growing method for oxide superconductor
JP31329/89 1989-02-10
JP31328/89 1989-02-10
JP3132889A JPH02210822A (en) 1989-02-10 1989-02-10 Vapor growth apparatus

Publications (3)

Publication Number Publication Date
EP0387456A2 EP0387456A2 (en) 1990-09-19
EP0387456A3 true EP0387456A3 (en) 1990-11-28
EP0387456B1 EP0387456B1 (en) 1993-09-22

Family

ID=26369777

Family Applications (1)

Application Number Title Priority Date Filing Date
EP89313578A Expired - Lifetime EP0387456B1 (en) 1989-02-10 1989-12-22 Method for vapor-phase growth of an oxide thin film

Country Status (3)

Country Link
US (1) US5164363A (en)
EP (1) EP0387456B1 (en)
DE (1) DE68909395T2 (en)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3124376B2 (en) * 1992-06-17 2001-01-15 株式会社東芝 Compound semiconductor vapor deposition equipment
US5458086A (en) * 1993-10-13 1995-10-17 Superconductor Technologies, Inc. Apparatus for growing metal oxides using organometallic vapor phase epitaxy
JP3152859B2 (en) * 1994-09-16 2001-04-03 株式会社東芝 Method for manufacturing semiconductor device
US6071572A (en) * 1996-10-15 2000-06-06 Applied Materials, Inc. Forming tin thin films using remote activated specie generation
NL1004867C2 (en) * 1996-12-20 1998-06-23 Tno Fiber-reinforced bio-ceramic composite material.
US6248392B1 (en) 1996-12-20 2001-06-19 Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Ondersoek Tno Method for manufacturing a fiber-reinforced bioactive ceramic implant
DE19730119A1 (en) * 1997-07-14 1999-01-21 Siemens Ag Process for the production of thin films from oxidic ceramics
US6943392B2 (en) * 1999-08-30 2005-09-13 Micron Technology, Inc. Capacitors having a capacitor dielectric layer comprising a metal oxide having multiple different metals bonded with oxygen
US6558517B2 (en) 2000-05-26 2003-05-06 Micron Technology, Inc. Physical vapor deposition methods
US6838122B2 (en) * 2001-07-13 2005-01-04 Micron Technology, Inc. Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers
US20030017266A1 (en) * 2001-07-13 2003-01-23 Cem Basceri Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers, including such layers having a varied concentration of barium and strontium within the layer
US7011978B2 (en) 2001-08-17 2006-03-14 Micron Technology, Inc. Methods of forming capacitor constructions comprising perovskite-type dielectric materials with different amount of crystallinity regions
TWI236505B (en) * 2002-01-14 2005-07-21 Nat Science Council Thermal cracking chemical vapor deposition process for nanocarbonaceous material
JP4690246B2 (en) * 2006-05-19 2011-06-01 住友電気工業株式会社 Superconducting thin film material and manufacturing method thereof
US7879401B2 (en) * 2006-12-22 2011-02-01 The Regents Of The University Of Michigan Organic vapor jet deposition using an exhaust
US8741158B2 (en) 2010-10-08 2014-06-03 Ut-Battelle, Llc Superhydrophobic transparent glass (STG) thin film articles
WO2011017454A1 (en) * 2009-08-04 2011-02-10 Ut-Battelle, Llc Critical current density enhancement via incorporation of nanoscale ba2(y,re) tao6 in rebco films
WO2011017439A1 (en) * 2009-08-04 2011-02-10 Ut-Battelle, Llc Critical current density enhancement via incorporation of nanoscale ba2renbo6 in rebco films
US8685549B2 (en) 2010-08-04 2014-04-01 Ut-Battelle, Llc Nanocomposites for ultra high density information storage, devices including the same, and methods of making the same
US11292919B2 (en) 2010-10-08 2022-04-05 Ut-Battelle, Llc Anti-fingerprint coatings
US9221076B2 (en) 2010-11-02 2015-12-29 Ut-Battelle, Llc Composition for forming an optically transparent, superhydrophobic coating
US8748350B2 (en) 2011-04-15 2014-06-10 Ut-Battelle Chemical solution seed layer for rabits tapes
US8748349B2 (en) 2011-04-15 2014-06-10 Ut-Battelle, Llc Buffer layers for REBCO films for use in superconducting devices
US20150239773A1 (en) 2014-02-21 2015-08-27 Ut-Battelle, Llc Transparent omniphobic thin film articles
FR3018825B1 (en) * 2014-03-21 2017-09-01 Altatech Semiconductor GAS PHASE DEPOSITION METHOD

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2162862A (en) * 1984-07-26 1986-02-12 Japan Res Dev Corp Process for forming monocrystalline thin film of compound semiconductor

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0651909B2 (en) * 1985-12-28 1994-07-06 キヤノン株式会社 Method of forming thin film multilayer structure
US4761269A (en) * 1986-06-12 1988-08-02 Crystal Specialties, Inc. Apparatus for depositing material on a substrate
JPS63292524A (en) * 1987-05-25 1988-11-29 Matsushita Electric Ind Co Ltd Manufacture of superconductive film
JPS63307275A (en) * 1987-06-05 1988-12-14 Kawasaki Steel Corp Mocvd device for preparing thin film of high-temperature superconductor
KR910007382B1 (en) * 1987-08-07 1991-09-25 가부시기가이샤 히다찌세이사꾸쇼 Superconductor material and method of manufacturing super-conductor film

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2162862A (en) * 1984-07-26 1986-02-12 Japan Res Dev Corp Process for forming monocrystalline thin film of compound semiconductor

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
APPLIED PHYSICS LETTERS, vol. 52, no. 2, 16th May 1988, pages 1743-1745, New York, US; A.D. BERRY et al.: "Formation of high Tc superconducting films by organometallic chemical vapor deposition" *
APPLIED PHYSICS LETTERS, vol. 53, no. 18, 31st October 1988, pages 1756-1758, American Institute of Physics, New York, US; A.J. PANSON et al.: "Chemical vapor deposition of YBa2CU3O7 using metalorganic chelate precursors" *

Also Published As

Publication number Publication date
EP0387456B1 (en) 1993-09-22
DE68909395D1 (en) 1993-10-28
DE68909395T2 (en) 1994-02-17
EP0387456A2 (en) 1990-09-19
US5164363A (en) 1992-11-17

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