FR3018825B1 - Procede de depot en phase gazeuse - Google Patents

Procede de depot en phase gazeuse

Info

Publication number
FR3018825B1
FR3018825B1 FR1452385A FR1452385A FR3018825B1 FR 3018825 B1 FR3018825 B1 FR 3018825B1 FR 1452385 A FR1452385 A FR 1452385A FR 1452385 A FR1452385 A FR 1452385A FR 3018825 B1 FR3018825 B1 FR 3018825B1
Authority
FR
France
Prior art keywords
gas phase
deposition method
phase deposition
gas
phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1452385A
Other languages
English (en)
Other versions
FR3018825A1 (fr
Inventor
Julien Vitiello
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kobus SAS
Original Assignee
Altatech Semiconductor
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1452385A priority Critical patent/FR3018825B1/fr
Application filed by Altatech Semiconductor filed Critical Altatech Semiconductor
Priority to PCT/EP2015/055821 priority patent/WO2015140261A1/fr
Priority to KR1020167027417A priority patent/KR20160135232A/ko
Priority to US15/127,218 priority patent/US20170107615A1/en
Priority to CN201580015091.9A priority patent/CN106170583A/zh
Priority to JP2017500419A priority patent/JP2017512914A/ja
Priority to EP15711152.7A priority patent/EP3119921A1/fr
Priority to SG11201607862TA priority patent/SG11201607862TA/en
Publication of FR3018825A1 publication Critical patent/FR3018825A1/fr
Application granted granted Critical
Publication of FR3018825B1 publication Critical patent/FR3018825B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Micromachines (AREA)
FR1452385A 2014-03-21 2014-03-21 Procede de depot en phase gazeuse Active FR3018825B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR1452385A FR3018825B1 (fr) 2014-03-21 2014-03-21 Procede de depot en phase gazeuse
KR1020167027417A KR20160135232A (ko) 2014-03-21 2015-03-19 기상 증착 방법
US15/127,218 US20170107615A1 (en) 2014-03-21 2015-03-19 Gas-phase deposition process
CN201580015091.9A CN106170583A (zh) 2014-03-21 2015-03-19 气相沉积方法
PCT/EP2015/055821 WO2015140261A1 (fr) 2014-03-21 2015-03-19 Procédé de dépôt en phase gazeuse
JP2017500419A JP2017512914A (ja) 2014-03-21 2015-03-19 気相堆積プロセス
EP15711152.7A EP3119921A1 (fr) 2014-03-21 2015-03-19 Procédé de dépôt en phase gazeuse
SG11201607862TA SG11201607862TA (en) 2014-03-21 2015-03-19 Gas-phase deposition process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1452385A FR3018825B1 (fr) 2014-03-21 2014-03-21 Procede de depot en phase gazeuse

Publications (2)

Publication Number Publication Date
FR3018825A1 FR3018825A1 (fr) 2015-09-25
FR3018825B1 true FR3018825B1 (fr) 2017-09-01

Family

ID=50877465

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1452385A Active FR3018825B1 (fr) 2014-03-21 2014-03-21 Procede de depot en phase gazeuse

Country Status (8)

Country Link
US (1) US20170107615A1 (fr)
EP (1) EP3119921A1 (fr)
JP (1) JP2017512914A (fr)
KR (1) KR20160135232A (fr)
CN (1) CN106170583A (fr)
FR (1) FR3018825B1 (fr)
SG (1) SG11201607862TA (fr)
WO (1) WO2015140261A1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3046878B1 (fr) 2016-01-19 2018-05-18 Kobus Sas Procede de fabrication d'une interconnexion comprenant un via s'etendant au travers d'un substrat
FR3056992B1 (fr) * 2016-10-04 2022-03-11 Unity Semiconductor Procede d'injection d'especes chimiques en phase gazeuse sous forme pulsee avec plasma
FR3061914B1 (fr) * 2017-01-16 2019-05-31 Kobus Sas Chambre de traitement pour un reacteur de depot chimique en phase vapeur (cvd) et procede de thermalisation mis en œuvre dans cette chambre
FR3064283B1 (fr) 2017-03-22 2022-04-29 Kobus Sas Procede et dispositif reacteur pour la realisation de couches minces mettant en œuvre une succession d'etapes de depots, et applications de ce procede
FR3070399B1 (fr) 2017-08-29 2020-09-25 Kobus Sas Procede pour le depot d'un materiau isolant dans un via, etreacteur de cvd pulse mettant en oeuvre ce procede
CN112090602B (zh) * 2020-09-24 2021-11-16 北京北方华创微电子装备有限公司 半导体工艺设备及其进气结构

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02210718A (ja) * 1989-02-10 1990-08-22 Toshiba Corp 酸化物超伝導体の気相成長方法
EP0387456B1 (fr) * 1989-02-10 1993-09-22 Kabushiki Kaisha Toshiba Procécé de déposition en phase vapeur d'une couche mince d'oxyde
JP4178776B2 (ja) * 2001-09-03 2008-11-12 東京エレクトロン株式会社 成膜方法
US7081271B2 (en) * 2001-12-07 2006-07-25 Applied Materials, Inc. Cyclical deposition of refractory metal silicon nitride
US20040040502A1 (en) * 2002-08-29 2004-03-04 Micron Technology, Inc. Micromachines for delivering precursors and gases for film deposition
US20040178175A1 (en) * 2003-03-12 2004-09-16 Pellin Michael J. Atomic layer deposition for high temperature superconductor material synthesis
CN1777697B (zh) * 2003-04-23 2011-06-22 集勒思公司 瞬时增强原子层沉积
US7740704B2 (en) * 2004-06-25 2010-06-22 Tokyo Electron Limited High rate atomic layer deposition apparatus and method of using
JP5045000B2 (ja) * 2006-06-20 2012-10-10 東京エレクトロン株式会社 成膜装置、ガス供給装置、成膜方法及び記憶媒体
JP2010084156A (ja) * 2008-09-29 2010-04-15 Tokyo Electron Ltd 処理ガス供給系及び成膜装置

Also Published As

Publication number Publication date
SG11201607862TA (en) 2016-11-29
FR3018825A1 (fr) 2015-09-25
US20170107615A1 (en) 2017-04-20
CN106170583A (zh) 2016-11-30
JP2017512914A (ja) 2017-05-25
KR20160135232A (ko) 2016-11-25
EP3119921A1 (fr) 2017-01-25
WO2015140261A1 (fr) 2015-09-24

Similar Documents

Publication Publication Date Title
DK3258193T3 (da) Køleapparat til containere
DK3196572T3 (da) Køleindretning til container
GB201517879D0 (en) Method of deposition
EP3005144A4 (fr) Élément de classement de résultats de recherche
FR3028872B1 (fr) Procede de fractionnement
DK3102263T3 (da) Mekanisme til kappefjernelse
DK3125898T3 (da) Farmakofor til trail-induktion
SG11201609350XA (en) Methods for inhibiting necroptosis
EP3206137A4 (fr) Système de recherche
FR3018825B1 (fr) Procede de depot en phase gazeuse
GB201515985D0 (en) Deposition process
EP3120268A4 (fr) Recherche par l'exemple
IL248936A0 (en) Small molecule lfa-1 inhibitors
SG11201606347XA (en) Deposition apparatus
PL3122823T3 (pl) Sposób powlekania segmentów rury
FR3019431B1 (fr) Procede de suivi de presence
DK3313453T3 (da) Metode til billeddannelse af gigt
SG11201704822WA (en) Target molecule capture from crude solutions
DK2947176T3 (da) Fremgangsmåde til at gennemføre en plasmapådampningsproces
ZA201607196B (en) Continuous coating method
FR3030308B1 (fr) Distillation reactive photocatalytique.
GB201404992D0 (en) Coating method
GB201402786D0 (en) Expansion method
GB201402787D0 (en) Expansion method
GB201712756D0 (en) Search method

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 3

PLFP Fee payment

Year of fee payment: 4

PLFP Fee payment

Year of fee payment: 5

CA Change of address

Effective date: 20180330

CD Change of name or company name

Owner name: UNITY SEMICONDUCTOR, FR

Effective date: 20180330

TP Transmission of property

Owner name: KOBUS SAS, FR

Effective date: 20180719

PLFP Fee payment

Year of fee payment: 7

PLFP Fee payment

Year of fee payment: 8

PLFP Fee payment

Year of fee payment: 9

PLFP Fee payment

Year of fee payment: 10

PLFP Fee payment

Year of fee payment: 11