FR3056992B1 - Procede d'injection d'especes chimiques en phase gazeuse sous forme pulsee avec plasma - Google Patents

Procede d'injection d'especes chimiques en phase gazeuse sous forme pulsee avec plasma Download PDF

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Publication number
FR3056992B1
FR3056992B1 FR1659558A FR1659558A FR3056992B1 FR 3056992 B1 FR3056992 B1 FR 3056992B1 FR 1659558 A FR1659558 A FR 1659558A FR 1659558 A FR1659558 A FR 1659558A FR 3056992 B1 FR3056992 B1 FR 3056992B1
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France
Prior art keywords
chemical species
plasma
injection
gaseous phase
injecting
Prior art date
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Active
Application number
FR1659558A
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English (en)
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FR3056992A1 (fr
Inventor
Fabien Piallat
Patrice Nal
Julien Vitiello
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kobus SAS
Original Assignee
Unity Semiconductor SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Unity Semiconductor SAS filed Critical Unity Semiconductor SAS
Priority to FR1659558A priority Critical patent/FR3056992B1/fr
Priority to PCT/EP2017/074837 priority patent/WO2018065321A1/fr
Publication of FR3056992A1 publication Critical patent/FR3056992A1/fr
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

La présente invention concerne un procédé d'injection d'espèces chimiques en phase gazeuse dans une chambre (30) de dépôt d'un réacteur de dépôt chimique en phase vapeur, comprenant : A) l'injection d'une première espèce chimique en phase gazeuse dans la chambre de dépôt par une première voie d'injection (40) selon une première séquence d'impulsions ; B) l'injection d'une seconde espèce chimique en phase gazeuse dans la chambre de dépôt par une seconde voie d'injection (50) selon une seconde séquence d'impulsions déphasée par rapport à la première séquence d'impulsions ; ledit procédé étant caractérisé par la génération, de manière séquentielle, d'un plasma de la première espèce chimique et/ou de la seconde espèce chimique pendant au moins une impulsion d'au moins une des séquences A) et B).
FR1659558A 2016-10-04 2016-10-04 Procede d'injection d'especes chimiques en phase gazeuse sous forme pulsee avec plasma Active FR3056992B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1659558A FR3056992B1 (fr) 2016-10-04 2016-10-04 Procede d'injection d'especes chimiques en phase gazeuse sous forme pulsee avec plasma
PCT/EP2017/074837 WO2018065321A1 (fr) 2016-10-04 2017-09-29 Procede d'injection d'especes chimiques en phase gazeuse sous forme pulsee avec plasma

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1659558 2016-10-04
FR1659558A FR3056992B1 (fr) 2016-10-04 2016-10-04 Procede d'injection d'especes chimiques en phase gazeuse sous forme pulsee avec plasma

Publications (2)

Publication Number Publication Date
FR3056992A1 FR3056992A1 (fr) 2018-04-06
FR3056992B1 true FR3056992B1 (fr) 2022-03-11

Family

ID=57796501

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1659558A Active FR3056992B1 (fr) 2016-10-04 2016-10-04 Procede d'injection d'especes chimiques en phase gazeuse sous forme pulsee avec plasma

Country Status (2)

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FR (1) FR3056992B1 (fr)
WO (1) WO2018065321A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110863189A (zh) * 2019-11-11 2020-03-06 中国科学院上海技术物理研究所 一种脉冲式注入反应物生长单层碲化物掺杂结构的方法
CN111850520A (zh) * 2020-06-18 2020-10-30 同济大学 一种含等离子体的气相沉积装置及其应用

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2930561B1 (fr) 2008-04-28 2011-01-14 Altatech Semiconductor Dispositif et procede de traitement chimique en phase vapeur.
DE102009026249B4 (de) * 2009-07-24 2012-11-15 Q-Cells Se Plasma unterstütztes Abscheideverfahren, Halbleitervorrichtung und Abscheidevorrichtung
KR20150061179A (ko) * 2013-11-26 2015-06-04 에스케이하이닉스 주식회사 플라즈마 강화 기상 증착
FR3018825B1 (fr) 2014-03-21 2017-09-01 Altatech Semiconductor Procede de depot en phase gazeuse
FR3024161B1 (fr) * 2014-07-24 2016-08-12 Altatech Semiconductor Procede de nettoyage d'une chambre de depot

Also Published As

Publication number Publication date
WO2018065321A1 (fr) 2018-04-12
FR3056992A1 (fr) 2018-04-06

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