DE3787556T2 - Verfahren zur Bildung eines abgeschiedenen Filmes. - Google Patents
Verfahren zur Bildung eines abgeschiedenen Filmes.Info
- Publication number
- DE3787556T2 DE3787556T2 DE87302782T DE3787556T DE3787556T2 DE 3787556 T2 DE3787556 T2 DE 3787556T2 DE 87302782 T DE87302782 T DE 87302782T DE 3787556 T DE3787556 T DE 3787556T DE 3787556 T2 DE3787556 T2 DE 3787556T2
- Authority
- DE
- Germany
- Prior art keywords
- forming
- deposited film
- deposited
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/0245—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61073094A JPS62228472A (ja) | 1986-03-31 | 1986-03-31 | 堆積膜形成法 |
JP61073091A JPH0647735B2 (ja) | 1986-03-31 | 1986-03-31 | 堆積膜形成法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3787556D1 DE3787556D1 (de) | 1993-11-04 |
DE3787556T2 true DE3787556T2 (de) | 1994-02-17 |
Family
ID=26414222
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE87302782T Expired - Fee Related DE3787556T2 (de) | 1986-03-31 | 1987-03-31 | Verfahren zur Bildung eines abgeschiedenen Filmes. |
Country Status (3)
Country | Link |
---|---|
US (1) | US4877650A (de) |
EP (1) | EP0240306B1 (de) |
DE (1) | DE3787556T2 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU7077087A (en) * | 1986-03-31 | 1987-10-08 | Canon Kabushiki Kaisha | Forming a deposited film |
EP0304337B1 (de) * | 1987-08-20 | 1994-10-05 | Canon Kabushiki Kaisha | Hybrid-Substrat |
US5232766A (en) * | 1987-08-20 | 1993-08-03 | Canon Kabushiki Kaisha | Hybrid substrate |
JPH02258689A (ja) * | 1989-03-31 | 1990-10-19 | Canon Inc | 結晶質薄膜の形成方法 |
JP3124376B2 (ja) * | 1992-06-17 | 2001-01-15 | 株式会社東芝 | 化合物半導体の気相成長装置 |
US5783492A (en) * | 1994-03-04 | 1998-07-21 | Tokyo Electron Limited | Plasma processing method, plasma processing apparatus, and plasma generating apparatus |
JP2929005B1 (ja) * | 1998-07-01 | 1999-08-03 | 科学技術庁金属材料技術研究所長 | Si微結晶構造の製造方法 |
JP4067858B2 (ja) * | 2002-04-16 | 2008-03-26 | 東京エレクトロン株式会社 | Ald成膜装置およびald成膜方法 |
US9481567B2 (en) * | 2014-06-12 | 2016-11-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | MEMS structure, cap substrate and method of fabricating the same |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4217374A (en) * | 1978-03-08 | 1980-08-12 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors |
US4226898A (en) * | 1978-03-16 | 1980-10-07 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process |
US4522663A (en) * | 1980-09-09 | 1985-06-11 | Sovonics Solar Systems | Method for optimizing photoresponsive amorphous alloys and devices |
DE3208494C2 (de) * | 1981-03-09 | 1993-09-30 | Canon Kk | Verfahren zur Herstellung eines fotoleitfähigen Elements |
US4504518A (en) * | 1982-09-24 | 1985-03-12 | Energy Conversion Devices, Inc. | Method of making amorphous semiconductor alloys and devices using microwave energy |
JPS59200248A (ja) * | 1983-04-28 | 1984-11-13 | Canon Inc | 像形成部材の製造法 |
DE3429899A1 (de) * | 1983-08-16 | 1985-03-07 | Canon K.K., Tokio/Tokyo | Verfahren zur bildung eines abscheidungsfilms |
JPH0719749B2 (ja) * | 1984-05-15 | 1995-03-06 | キヤノン株式会社 | 堆積膜の形成方法 |
JPS6126774A (ja) * | 1984-07-16 | 1986-02-06 | Canon Inc | 非晶質シリコン膜形成装置 |
JPH0766909B2 (ja) * | 1984-07-26 | 1995-07-19 | 新技術事業団 | 元素半導体単結晶薄膜の成長法 |
US4657777A (en) * | 1984-12-17 | 1987-04-14 | Canon Kabushiki Kaisha | Formation of deposited film |
AU7077087A (en) * | 1986-03-31 | 1987-10-08 | Canon Kabushiki Kaisha | Forming a deposited film |
JPS62228471A (ja) * | 1986-03-31 | 1987-10-07 | Canon Inc | 堆積膜形成法 |
-
1987
- 1987-03-30 US US07/031,133 patent/US4877650A/en not_active Expired - Lifetime
- 1987-03-31 EP EP87302782A patent/EP0240306B1/de not_active Expired - Lifetime
- 1987-03-31 DE DE87302782T patent/DE3787556T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0240306B1 (de) | 1993-09-29 |
EP0240306A1 (de) | 1987-10-07 |
DE3787556D1 (de) | 1993-11-04 |
US4877650A (en) | 1989-10-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |