DE69022898D1 - Verfahren zur Erzeugung einer Dünnschicht TIN. - Google Patents

Verfahren zur Erzeugung einer Dünnschicht TIN.

Info

Publication number
DE69022898D1
DE69022898D1 DE69022898T DE69022898T DE69022898D1 DE 69022898 D1 DE69022898 D1 DE 69022898D1 DE 69022898 T DE69022898 T DE 69022898T DE 69022898 T DE69022898 T DE 69022898T DE 69022898 D1 DE69022898 D1 DE 69022898D1
Authority
DE
Germany
Prior art keywords
producing
thin film
film tin
tin
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69022898T
Other languages
English (en)
Other versions
DE69022898T2 (de
Inventor
Koichi Ikeda
Yoshinobu Arita
Masahiko Maeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Publication of DE69022898D1 publication Critical patent/DE69022898D1/de
Application granted granted Critical
Publication of DE69022898T2 publication Critical patent/DE69022898T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
DE69022898T 1989-07-07 1990-07-07 Verfahren zur Erzeugung einer Dünnschicht TIN. Expired - Fee Related DE69022898T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1174129A JP2747036B2 (ja) 1989-07-07 1989-07-07 薄膜形成方法

Publications (2)

Publication Number Publication Date
DE69022898D1 true DE69022898D1 (de) 1995-11-16
DE69022898T2 DE69022898T2 (de) 1996-05-30

Family

ID=15973165

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69022898T Expired - Fee Related DE69022898T2 (de) 1989-07-07 1990-07-07 Verfahren zur Erzeugung einer Dünnschicht TIN.

Country Status (5)

Country Link
US (1) US5080927A (de)
EP (1) EP0406995B1 (de)
JP (1) JP2747036B2 (de)
KR (2) KR930010711B1 (de)
DE (1) DE69022898T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5171610A (en) * 1990-08-28 1992-12-15 The Regents Of The University Of Calif. Low temperature photochemical vapor deposition of alloy and mixed metal oxide films
KR100228259B1 (ko) * 1990-10-24 1999-11-01 고지마 마따오 박막의 형성방법 및 반도체장치
US5312774A (en) * 1991-12-05 1994-05-17 Sharp Kabushiki Kaisha Method for manufacturing a semiconductor device comprising titanium
JPH05311445A (ja) * 1992-05-12 1993-11-22 Kawasaki Steel Corp ＴｉＮ膜の製造方法
US5240739A (en) * 1992-08-07 1993-08-31 Micron Technology Chemical vapor deposition technique for depositing titanium silicide on semiconductor wafers
US5693377A (en) * 1996-01-08 1997-12-02 Micron Technology, Inc. Method of reducing carbon incorporation into films produced by chemical vapor deposition involving titanium organometallic and metal-organic precursor compounds
DE19806013C2 (de) * 1998-02-16 2003-10-30 Forschungszentrum Juelich Gmbh Verfahren zur Herstellung einer kristallisierten keramischen Dünnschicht
JP4011870B2 (ja) * 2001-08-09 2007-11-21 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP5045000B2 (ja) * 2006-06-20 2012-10-10 東京エレクトロン株式会社 成膜装置、ガス供給装置、成膜方法及び記憶媒体

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4434189A (en) * 1982-03-15 1984-02-28 The United States Of America As Represented By The Adminstrator Of The National Aeronautics And Space Administration Method and apparatus for coating substrates using a laser
US4446242A (en) * 1983-02-28 1984-05-01 The United States Of America As Represented By The United States Department Of Energy Synthesis of refractory materials
US4570328A (en) * 1983-03-07 1986-02-18 Motorola, Inc. Method of producing titanium nitride MOS device gate electrode
EP0174743A3 (de) * 1984-09-05 1988-06-08 Morton Thiokol, Inc. Verfahren zur Abscheidung von Dünnfilmen aus Nitriden der Übergangsmetalle
US4812301A (en) * 1986-04-24 1989-03-14 The United States Of America As Represented By The Secretary Of The Interior Production of titanium nitride, carbide, and carbonitride powders
US4889745A (en) * 1986-11-28 1989-12-26 Japan As Represented By Director General Of Agency Of Industrial Science And Technology Method for reactive preparation of a shaped body of inorganic compound of metal
DE3837442A1 (de) * 1987-11-13 1989-05-24 Matsushita Electric Works Ltd Verfahren und vorrichtung zum herstellen eines metallblattes mit einer profilierten oberflaeche durch chemische gasphasenabscheidung

Also Published As

Publication number Publication date
EP0406995A1 (de) 1991-01-09
DE69022898T2 (de) 1996-05-30
JPH0339474A (ja) 1991-02-20
US5080927A (en) 1992-01-14
KR910003754A (ko) 1991-02-28
KR930010711Y1 (en) 1993-11-08
KR930010711B1 (ko) 1993-11-08
EP0406995B1 (de) 1995-10-11
JP2747036B2 (ja) 1998-05-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee