DE69031880D1 - Verfahren zur Herstellung eines halbleitenden kristallinen Filmes - Google Patents

Verfahren zur Herstellung eines halbleitenden kristallinen Filmes

Info

Publication number
DE69031880D1
DE69031880D1 DE69031880T DE69031880T DE69031880D1 DE 69031880 D1 DE69031880 D1 DE 69031880D1 DE 69031880 T DE69031880 T DE 69031880T DE 69031880 T DE69031880 T DE 69031880T DE 69031880 D1 DE69031880 D1 DE 69031880D1
Authority
DE
Germany
Prior art keywords
production
crystalline film
semiconducting crystalline
semiconducting
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69031880T
Other languages
English (en)
Other versions
DE69031880T2 (de
Inventor
Nobuhiko Sato
Takao Yonehara
Hideya Kumomi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP8110389A external-priority patent/JP2680114B2/ja
Priority claimed from JP1110386A external-priority patent/JP2695466B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69031880D1 publication Critical patent/DE69031880D1/de
Publication of DE69031880T2 publication Critical patent/DE69031880T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02595—Microstructure polycrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
DE69031880T 1989-03-31 1990-03-30 Verfahren zur Herstellung eines halbleitenden kristallinen Filmes Expired - Fee Related DE69031880T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP8110389A JP2680114B2 (ja) 1989-03-31 1989-03-31 結晶性半導体薄膜の形成方法
JP1110386A JP2695466B2 (ja) 1989-04-28 1989-04-28 結晶成長方法

Publications (2)

Publication Number Publication Date
DE69031880D1 true DE69031880D1 (de) 1998-02-12
DE69031880T2 DE69031880T2 (de) 1998-05-20

Family

ID=26422144

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69031880T Expired - Fee Related DE69031880T2 (de) 1989-03-31 1990-03-30 Verfahren zur Herstellung eines halbleitenden kristallinen Filmes

Country Status (2)

Country Link
EP (1) EP0390607B1 (de)
DE (1) DE69031880T2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4114162A1 (de) * 1990-05-02 1991-11-07 Nippon Sheet Glass Co Ltd Verfahren zur herstellung eines polykristallinen halbleiterfilms
US5318919A (en) * 1990-07-31 1994-06-07 Sanyo Electric Co., Ltd. Manufacturing method of thin film transistor
US5192708A (en) * 1991-04-29 1993-03-09 International Business Machines Corporation Sub-layer contact technique using in situ doped amorphous silicon and solid phase recrystallization

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5885520A (ja) * 1981-11-17 1983-05-21 Sharp Corp 半導体装置の製造方法
JPS58169905A (ja) * 1982-03-31 1983-10-06 Hitachi Ltd 単結晶薄膜の製造方法
JP2595525B2 (ja) * 1987-04-10 1997-04-02 ソニー株式会社 半導体薄膜の形成方法
JP2746606B2 (ja) * 1987-09-18 1998-05-06 ゼロックス コーポレーション 大粒子多結晶質膜の製造方法

Also Published As

Publication number Publication date
EP0390607A2 (de) 1990-10-03
DE69031880T2 (de) 1998-05-20
EP0390607A3 (de) 1991-01-30
EP0390607B1 (de) 1998-01-07

Similar Documents

Publication Publication Date Title
DE69304252D1 (de) Verfahren zur Herstellung eines chemisch adsorbierten Filmes
DE69120326D1 (de) Verfahren zur Herstellung eines Siliziumeinkristalles
DE69204386D1 (de) Verfahren zur Herstellung eines polykristallinen Siliziumfilmes.
DE69032568T2 (de) Verfahren zur Herstellung einer dekorativen Folie
DE69324633D1 (de) Verfahren zur Herstellung eines einkristallinen Dünnfilmes
DE69217810D1 (de) Verfahren zur Herstellung eines warmleitenden Materials
DE69422666T2 (de) Verfahren zur Herstellung eines hochkristallinen, dünnen SrTiO3 Oxidfilms
DE68920417D1 (de) Verfahren zur Herstellung eines kohlenstoffhaltigen Films.
DE3752094T2 (de) Verfahren zur Herstellung eines ferroelektrischen Film
DE3887907D1 (de) Verfahren zur Herstellung eines hochmodularen Films.
DE3854977T2 (de) Verfahren zur Abscheidung eines supraleitenden dünnen Filmes
DE59107767D1 (de) Verfahren zur Herstellung eines wasserexpandierten Polyacrylatforkörpers
DE69032340T2 (de) Verfahren zur Herstellung einer Halbleiterdünnschicht
DE69013948D1 (de) Verfahren zur Herstellung eines dünnen Filmes.
DE69209337D1 (de) Verfahren zur Herstellung eines supraleitenden Materials
DE3787556T2 (de) Verfahren zur Bildung eines abgeschiedenen Filmes.
DE69031880D1 (de) Verfahren zur Herstellung eines halbleitenden kristallinen Filmes
DE69417805T2 (de) Verfahren zur Herstellung eines Halbleitermaterials
DE69026313T2 (de) Verfahren zur Herstellung eines wärmeempfindlichen Aufzeichnungsmaterials
DE69123906D1 (de) Verfahren zur Herstellung eines molekularen Schichtmaterials
DE69030542T2 (de) Prozess zur Herstellung eines Zweischichtenfilmträgers
DE69027901D1 (de) Verfahren zur Herstellung einer Halbleiterdünnschicht
DE69421007T2 (de) Verfahren zur Herstellung eines Halbleitermaterials
DE69303408D1 (de) Verfahren zur Herstellung eines Karbonates
DE69213379D1 (de) Verfahren zur Herstellung eines Hochtemperatur supraleitenden Stoffs

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee