DE69422666T2 - Verfahren zur Herstellung eines hochkristallinen, dünnen SrTiO3 Oxidfilms - Google Patents

Verfahren zur Herstellung eines hochkristallinen, dünnen SrTiO3 Oxidfilms

Info

Publication number
DE69422666T2
DE69422666T2 DE69422666T DE69422666T DE69422666T2 DE 69422666 T2 DE69422666 T2 DE 69422666T2 DE 69422666 T DE69422666 T DE 69422666T DE 69422666 T DE69422666 T DE 69422666T DE 69422666 T2 DE69422666 T2 DE 69422666T2
Authority
DE
Germany
Prior art keywords
srtio3
thin
production
oxide film
highly crystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69422666T
Other languages
English (en)
Other versions
DE69422666D1 (de
Inventor
So Tanaka
Michitomo Iiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP19085493A external-priority patent/JP3413888B2/ja
Priority claimed from JP5200016A external-priority patent/JPH0738164A/ja
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of DE69422666D1 publication Critical patent/DE69422666D1/de
Publication of DE69422666T2 publication Critical patent/DE69422666T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/225—Complex oxides based on rare earth copper oxides, e.g. high T-superconductors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/32—Titanates; Germanates; Molybdates; Tungstates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming superconductor layers
    • H10N60/0381—Processes for depositing or forming superconductor layers by evaporation independent of heat source, e.g. MBE
DE69422666T 1993-07-02 1994-07-01 Verfahren zur Herstellung eines hochkristallinen, dünnen SrTiO3 Oxidfilms Expired - Fee Related DE69422666T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP19085493A JP3413888B2 (ja) 1993-07-02 1993-07-02 酸化物薄膜の成膜方法
JP5200016A JPH0738164A (ja) 1993-07-19 1993-07-19 酸化物超電導薄膜上に上層の薄膜を積層する方法

Publications (2)

Publication Number Publication Date
DE69422666D1 DE69422666D1 (de) 2000-02-24
DE69422666T2 true DE69422666T2 (de) 2000-07-27

Family

ID=26506345

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69422666T Expired - Fee Related DE69422666T2 (de) 1993-07-02 1994-07-01 Verfahren zur Herstellung eines hochkristallinen, dünnen SrTiO3 Oxidfilms

Country Status (4)

Country Link
US (1) US5501175A (de)
EP (1) EP0633331B1 (de)
CA (1) CA2127323C (de)
DE (1) DE69422666T2 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2152718A1 (en) * 1994-07-04 1996-01-05 Takao Nakamura Process for preparing high crystallinity oxide thin film
JPH0867968A (ja) * 1994-08-26 1996-03-12 Sumitomo Electric Ind Ltd 酸化物薄膜の作製方法
GB2323209A (en) * 1997-03-13 1998-09-16 Sharp Kk Molecular beam epitaxy apparatus and method
EP1038996B1 (de) * 1998-09-11 2007-09-05 Japan Science and Technology Agency Kombinatorische vorrichtung für epitaktische molekularschicht
US6541079B1 (en) * 1999-10-25 2003-04-01 International Business Machines Corporation Engineered high dielectric constant oxide and oxynitride heterostructure gate dielectrics by an atomic beam deposition technique
AU5095601A (en) * 2000-03-24 2001-10-08 Cymbet Corp Thin-film battery having ultra-thin electrolyte and associated method
EP1369499A3 (de) * 2002-04-15 2004-10-20 Semiconductor Energy Laboratory Co., Ltd. Verfahren und Vorrichtung zur Herstellung eines lichtemittierenden Bauteils
US6906436B2 (en) * 2003-01-02 2005-06-14 Cymbet Corporation Solid state activity-activated battery device and method
US7294209B2 (en) * 2003-01-02 2007-11-13 Cymbet Corporation Apparatus and method for depositing material onto a substrate using a roll-to-roll mask
US20040131760A1 (en) * 2003-01-02 2004-07-08 Stuart Shakespeare Apparatus and method for depositing material onto multiple independently moving substrates in a chamber
US7603144B2 (en) * 2003-01-02 2009-10-13 Cymbet Corporation Active wireless tagging system on peel and stick substrate
US7211351B2 (en) 2003-10-16 2007-05-01 Cymbet Corporation Lithium/air batteries with LiPON as separator and protective barrier and method
KR20070024473A (ko) * 2004-01-06 2007-03-02 사임베트 코퍼레이션 층상 배리어구조와 그 형성방법
US7776478B2 (en) * 2005-07-15 2010-08-17 Cymbet Corporation Thin-film batteries with polymer and LiPON electrolyte layers and method
US20070012244A1 (en) * 2005-07-15 2007-01-18 Cymbet Corporation Apparatus and method for making thin-film batteries with soft and hard electrolyte layers
WO2007011899A2 (en) * 2005-07-15 2007-01-25 Cymbet Corporation Thin-film batteries with polymer and lipon electrolyte layers and method
US20080232761A1 (en) * 2006-09-20 2008-09-25 Raveen Kumaran Methods of making optical waveguide structures by way of molecular beam epitaxy
US9853325B2 (en) 2011-06-29 2017-12-26 Space Charge, LLC Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices
US11527774B2 (en) 2011-06-29 2022-12-13 Space Charge, LLC Electrochemical energy storage devices
US10601074B2 (en) 2011-06-29 2020-03-24 Space Charge, LLC Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices
US20140272346A1 (en) * 2013-03-15 2014-09-18 Rubicon Technology, Inc. Method of growing aluminum oxide onto substrates by use of an aluminum source in an oxygen environment to create transparent, scratch resistant windows
WO2019173626A1 (en) 2018-03-07 2019-09-12 Space Charge, LLC Thin-film solid-state energy-storage devices
US20220162741A1 (en) * 2020-01-28 2022-05-26 Ulvac, Inc. Evaporator and deposition apparatus
CN111349963A (zh) * 2020-04-21 2020-06-30 中国工程物理研究院材料研究所 六角相三氧化二铈单晶薄膜及其制备方法与应用

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1332324C (en) * 1987-03-30 1994-10-11 Jun Shioya Method for producing thin film of oxide superconductor
JPH075435B2 (ja) * 1987-03-31 1995-01-25 住友電気工業株式会社 超電導薄膜の製造方法及び装置
US4981714A (en) * 1987-12-14 1991-01-01 Sharp Kabushiki Kaisha Method of producing ferroelectric LiNb1-31 x Tax O3 0<x<1) thin film by activated evaporation
US5361720A (en) * 1988-04-22 1994-11-08 British Technology Group Ltd. Epitaxial deposition
EP0429536A4 (en) * 1988-08-19 1993-12-15 Regents Of The University Of Minnesota Preparation of superconductive ceramic oxides using ozone
US5236895A (en) * 1988-11-24 1993-08-17 Kawasaki Jukogyo Kabushiki Kaisha Production of oxide superconducting films by laser sputtering using N22
US5260267A (en) * 1989-07-24 1993-11-09 Sumitomo Electric Industries, Ltd. Method for forming a Bi-containing superconducting oxide film on a substrate with a buffer layer of Bi2 O3
JPH0354116A (ja) * 1989-07-24 1991-03-08 Sumitomo Electric Ind Ltd 複合酸化物超電導薄膜および作製方法
CA2029038C (en) * 1989-10-31 1993-12-14 Keizo Harada Process and system for preparing a superconducting thin film of oxide
JPH03150218A (ja) * 1989-11-07 1991-06-26 Sumitomo Electric Ind Ltd 超電導薄膜の作製方法
US5264413A (en) * 1990-03-07 1993-11-23 Ivan Bozovic Bi-Sr-Ca-Cu-O compounds and methods
DE69132972T2 (de) * 1991-01-07 2003-03-13 Ibm Supraleitender Feldeffekttransistor mit inverser MISFET-Struktur und Verfahren zu dessen Herstellung
JPH04357198A (ja) * 1991-02-20 1992-12-10 Sanyo Electric Co Ltd 酸化物超電導薄膜の製造方法
FR2675951B1 (fr) * 1991-04-23 1997-08-29 Thomson Csf Structure de jonction josephson.

Also Published As

Publication number Publication date
EP0633331A1 (de) 1995-01-11
EP0633331B1 (de) 2000-01-19
US5501175A (en) 1996-03-26
CA2127323A1 (en) 1995-01-03
DE69422666D1 (de) 2000-02-24
CA2127323C (en) 1998-08-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee