DE69132972T2 - Supraleitender Feldeffekttransistor mit inverser MISFET-Struktur und Verfahren zu dessen Herstellung - Google Patents

Supraleitender Feldeffekttransistor mit inverser MISFET-Struktur und Verfahren zu dessen Herstellung

Info

Publication number
DE69132972T2
DE69132972T2 DE69132972T DE69132972T DE69132972T2 DE 69132972 T2 DE69132972 T2 DE 69132972T2 DE 69132972 T DE69132972 T DE 69132972T DE 69132972 T DE69132972 T DE 69132972T DE 69132972 T2 DE69132972 T2 DE 69132972T2
Authority
DE
Germany
Prior art keywords
inverse
production
field effect
effect transistor
superconducting field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69132972T
Other languages
English (en)
Other versions
DE69132972D1 (de
Inventor
Dr Bednorz
Dr Mannhart
Prof Dr Mueller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE69132972D1 publication Critical patent/DE69132972D1/de
Application granted granted Critical
Publication of DE69132972T2 publication Critical patent/DE69132972T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/10—Junction-based devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/20—Permanent superconducting devices
    • H10N60/205—Permanent superconducting devices having three or more electrodes, e.g. transistor-like structures 
    • H10N60/207—Field effect devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/701—Coated or thin film device, i.e. active or passive
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/706—Contact pads or leads bonded to superconductor
DE69132972T 1991-01-07 1991-01-07 Supraleitender Feldeffekttransistor mit inverser MISFET-Struktur und Verfahren zu dessen Herstellung Expired - Fee Related DE69132972T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP91810006A EP0494580B1 (de) 1991-01-07 1991-01-07 Supraleitender Feldeffekttransistor mit inverser MISFET-Struktur und Verfahren zu dessen Herstellung

Publications (2)

Publication Number Publication Date
DE69132972D1 DE69132972D1 (de) 2002-05-08
DE69132972T2 true DE69132972T2 (de) 2003-03-13

Family

ID=8208808

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69132972T Expired - Fee Related DE69132972T2 (de) 1991-01-07 1991-01-07 Supraleitender Feldeffekttransistor mit inverser MISFET-Struktur und Verfahren zu dessen Herstellung

Country Status (10)

Country Link
US (3) US5278136A (de)
EP (1) EP0494580B1 (de)
JP (1) JPH0834321B2 (de)
KR (1) KR960002292B1 (de)
CN (3) CN1099138C (de)
CA (1) CA2058780A1 (de)
DE (1) DE69132972T2 (de)
MY (1) MY109375A (de)
SG (1) SG46182A1 (de)
TW (1) TW238399B (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2674374A1 (fr) * 1991-03-22 1992-09-25 Bull Sa Transistor supraconducteur a effet de champ et procede de fabrication d'une structure multicouche telle que celle utilisee dans le transistor.
DE69218348T2 (de) * 1991-11-30 1997-10-16 Sumitomo Electric Industries Supraleitendes Bauelement mit extrem dünnen supraleitenden Kanal und Herstellungsverfahren
US5501175A (en) * 1993-07-02 1996-03-26 Sumitomo Electric Industries, Ltd. Process for preparing high crystallinity oxide thin film
KR0148598B1 (ko) * 1994-11-21 1998-10-15 정선종 두꺼운 초전도채널층을 구비한 고온초전도 전계효과 트랜지스터의 제조방법
KR0148596B1 (ko) * 1994-11-28 1998-10-15 양승택 결정 입계 채널을 갖는 초전도 전계효과 소자와 그 제조방법
JPH08227743A (ja) * 1995-02-20 1996-09-03 Sumitomo Electric Ind Ltd 酸化物超電導体用金属電極
KR100194621B1 (ko) * 1995-12-21 1999-07-01 정선종 고온초전도 전계효과 소자 및 그 제조방법
US6890766B2 (en) * 1999-03-17 2005-05-10 International Business Machines Corporation Dual-type thin-film field-effect transistors and applications
SG95620A1 (en) * 1999-05-18 2003-04-23 Ibm Dual-type thin-film field-effect transistors and applications
AU7062200A (en) * 1999-08-19 2001-03-13 Manufacturing And Technology Conversion International, Inc. Gas turbine with indirectly heated steam reforming system
CN100431190C (zh) * 2004-09-01 2008-11-05 复旦大学 一种有机场效应管取向层及其制备方法和应用
GB0423343D0 (en) * 2004-10-21 2004-11-24 Koninkl Philips Electronics Nv Metal-oxide-semiconductor device
US7601165B2 (en) * 2006-09-29 2009-10-13 Biomet Sports Medicine, Llc Method and apparatus for forming a self-locking adjustable suture loop
WO2008109564A1 (en) * 2007-03-02 2008-09-12 The Regents Of The University Of California Complex oxides useful for thermoelectric energy conversion
US8204564B2 (en) * 2007-11-07 2012-06-19 Brookhaven Science Associates, Llc High temperature interfacial superconductivity
KR20130129674A (ko) 2012-05-21 2013-11-29 삼성디스플레이 주식회사 박막 트랜지스터 및 이를 포함하는 박막 트랜지스터 표시판
KR102376508B1 (ko) * 2017-11-16 2022-03-18 삼성전자주식회사 집적회로 장치 및 그 제조 방법

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH069262B2 (ja) * 1984-09-21 1994-02-02 株式会社日立製作所 超電導デバイス
EP0257474A3 (de) * 1986-08-13 1989-02-15 Hitachi, Ltd. Supraleitendes Bauelement
JPS6346786A (ja) * 1986-08-15 1988-02-27 Hitachi Ltd 超電導トランジスタ
KR910002311B1 (ko) * 1987-02-27 1991-04-11 가부시기가이샤 히다찌세이사꾸쇼 초전도 디바이스
JPS63239990A (ja) * 1987-03-27 1988-10-05 Toshiba Corp 超電導トランジスタ
EP0293836B1 (de) * 1987-05-31 1993-10-27 Sumitomo Electric Industries Limited Methode zur Herstellung einer supraleitenden Dünnschicht
JPS63308977A (ja) * 1987-06-11 1988-12-16 Toshiba Corp 超電導素子
DE3889024T2 (de) * 1987-07-13 1994-10-13 Sumitomo Electric Industries Verfahren zum Herstellen einer supraleitenden Dünnschicht.
JPS6431475A (en) * 1987-07-28 1989-02-01 Univ Tokyo Superconducting device and forming method thereof
NL8701779A (nl) * 1987-07-28 1989-02-16 Philips Nv Supergeleidende dunne laag.
US4980339A (en) * 1987-07-29 1990-12-25 Matsushita Electric Industrial Co., Ltd. Superconductor structure
JPH01101676A (ja) * 1987-10-15 1989-04-19 Mitsubishi Electric Corp 超伝導トランジスタ
AU610260B2 (en) * 1987-10-16 1991-05-16 Furukawa Electric Co. Ltd., The Oxide superconductor shaped body and method of manufacturing the same
GB2213839B (en) * 1987-12-23 1992-06-17 Plessey Co Plc Semiconducting thin films
US5221660A (en) * 1987-12-25 1993-06-22 Sumitomo Electric Industries, Ltd. Semiconductor substrate having a superconducting thin film
EP0324044B1 (de) * 1988-01-15 1992-11-25 International Business Machines Corporation Feldeffektanordnung mit supraleitendem Kanal
EP0329103B2 (de) * 1988-02-17 1999-03-17 Kabushiki Kaisha Riken Verfahren zur Herstellung von dünnen Schichten aus Hochtemperatur-Supraleiteroxyd
US5084438A (en) * 1988-03-23 1992-01-28 Nec Corporation Electronic device substrate using silicon semiconductor substrate
IT1217585B (it) * 1988-05-13 1990-03-30 Enichem Spa Film sottili superconduttori ad elevata densita' di corrente e loro metodo di preparazione
EP0343649A1 (de) * 1988-05-24 1989-11-29 Siemens Aktiengesellschaft Verfahren zur Herstellung von dünnen Schichten eines Hochtemperatur-Supraleiters und damit hergestellte Schichten
JP2646683B2 (ja) * 1988-08-02 1997-08-27 日本電気株式会社 電子デバイス用基板
JP2862137B2 (ja) * 1988-08-11 1999-02-24 古河電気工業株式会社 超電導トランジスタ
JPH0262082A (ja) * 1988-08-29 1990-03-01 Fujitsu Ltd 超伝導トランジスタ
JP3020524B2 (ja) * 1988-11-28 2000-03-15 株式会社日立製作所 酸化物超電導素子
JPH02181482A (ja) * 1989-01-06 1990-07-16 Sumitomo Electric Ind Ltd 超電導体層を有する半導体基板
US5075283A (en) * 1989-03-09 1991-12-24 International Superconductor Corp. High-Tc superconductor quantum interference devices
US5130294A (en) * 1990-08-13 1992-07-14 Kookrin Char High temperature superconductor-calcium titanate structures
US5132282A (en) * 1990-03-16 1992-07-21 Nathan Newman High temperature superconductor-strontium titanate sapphire structures
US5173474A (en) * 1990-04-18 1992-12-22 Xerox Corporation Silicon substrate having an epitaxial superconducting layer thereon and method of making same
US5128316A (en) * 1990-06-04 1992-07-07 Eastman Kodak Company Articles containing a cubic perovskite crystal structure
EP0523275B1 (de) * 1991-07-19 1996-02-28 International Business Machines Corporation Verbesserter supraleitender Feldeffekt-Transistor mit inverser MISFET-Struktur und Verfahren zu dessen Herstellung

Also Published As

Publication number Publication date
CN1138301C (zh) 2004-02-11
CA2058780A1 (en) 1992-07-08
JPH0834321B2 (ja) 1996-03-29
US5278136A (en) 1994-01-11
CN1173418C (zh) 2004-10-27
CN1099138C (zh) 2003-01-15
JPH05235426A (ja) 1993-09-10
KR960002292B1 (ko) 1996-02-14
CN1323070A (zh) 2001-11-21
MY109375A (en) 1997-01-31
KR920015626A (ko) 1992-08-27
EP0494580B1 (de) 2002-04-03
EP0494580A1 (de) 1992-07-15
DE69132972D1 (de) 2002-05-08
US5382565A (en) 1995-01-17
US5376569A (en) 1994-12-27
SG46182A1 (en) 1998-02-20
CN1073045A (zh) 1993-06-09
TW238399B (de) 1995-01-11
CN1269603A (zh) 2000-10-11

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Legal Events

Date Code Title Description
8332 No legal effect for de
8370 Indication related to discontinuation of the patent is to be deleted
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee