SG95620A1 - Dual-type thin-film field-effect transistors and applications - Google Patents
Dual-type thin-film field-effect transistors and applicationsInfo
- Publication number
- SG95620A1 SG95620A1 SG200001956A SG200001956A SG95620A1 SG 95620 A1 SG95620 A1 SG 95620A1 SG 200001956 A SG200001956 A SG 200001956A SG 200001956 A SG200001956 A SG 200001956A SG 95620 A1 SG95620 A1 SG 95620A1
- Authority
- SG
- Singapore
- Prior art keywords
- dual
- applications
- effect transistors
- type thin
- film field
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N99/00—Subject matter not provided for in other groups of this subclass
- H10N99/03—Devices using Mott metal-insulator transition, e.g. field-effect transistor-like devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US31443699A | 1999-05-18 | 1999-05-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG95620A1 true SG95620A1 (en) | 2003-04-23 |
Family
ID=23219942
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG200001956A SG95620A1 (en) | 1999-05-18 | 2000-04-06 | Dual-type thin-film field-effect transistors and applications |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR20010014877A (en) |
| CN (1) | CN1279517A (en) |
| SG (1) | SG95620A1 (en) |
| TW (1) | TW503581B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101200825B1 (en) * | 2009-12-21 | 2012-11-22 | 서울대학교산학협력단 | System and method for reducing reception error of data on audio frequency baseband-based sound communication, apparatus applied to the same |
| CN106252362B (en) * | 2016-08-31 | 2019-07-12 | 深圳市华星光电技术有限公司 | A kind of array substrate and preparation method thereof |
| CN110767646B (en) | 2019-10-31 | 2021-02-09 | 京东方科技集团股份有限公司 | Display substrate, manufacturing method thereof and display device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5382565A (en) * | 1991-01-07 | 1995-01-17 | International Business Machines Corporation | Superconducting field-effect transistors with inverted MISFET structure |
| US5418389A (en) * | 1992-11-09 | 1995-05-23 | Mitsubishi Chemical Corporation | Field-effect transistor with perovskite oxide channel |
-
2000
- 2000-04-06 SG SG200001956A patent/SG95620A1/en unknown
- 2000-04-30 CN CN00108220A patent/CN1279517A/en active Pending
- 2000-05-08 KR KR1020000024319A patent/KR20010014877A/en not_active Application Discontinuation
- 2000-05-12 TW TW089109150A patent/TW503581B/en not_active IP Right Cessation
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5382565A (en) * | 1991-01-07 | 1995-01-17 | International Business Machines Corporation | Superconducting field-effect transistors with inverted MISFET structure |
| US5418389A (en) * | 1992-11-09 | 1995-05-23 | Mitsubishi Chemical Corporation | Field-effect transistor with perovskite oxide channel |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20010014877A (en) | 2001-02-26 |
| CN1279517A (en) | 2001-01-10 |
| TW503581B (en) | 2002-09-21 |
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