DE68925150D1 - Bipolartransistor und Verfahren zu dessen Herstellung - Google Patents

Bipolartransistor und Verfahren zu dessen Herstellung

Info

Publication number
DE68925150D1
DE68925150D1 DE68925150T DE68925150T DE68925150D1 DE 68925150 D1 DE68925150 D1 DE 68925150D1 DE 68925150 T DE68925150 T DE 68925150T DE 68925150 T DE68925150 T DE 68925150T DE 68925150 D1 DE68925150 D1 DE 68925150D1
Authority
DE
Germany
Prior art keywords
production
bipolar transistor
bipolar
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68925150T
Other languages
English (en)
Other versions
DE68925150T2 (de
Inventor
Otto Heinrich Schade
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Harris Corp
Original Assignee
Harris Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Harris Corp filed Critical Harris Corp
Application granted granted Critical
Publication of DE68925150D1 publication Critical patent/DE68925150D1/de
Publication of DE68925150T2 publication Critical patent/DE68925150T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H01L29/0813—Non-interconnected multi-emitter structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7302—Bipolar junction transistors structurally associated with other devices
    • H01L29/7304—Bipolar junction transistors structurally associated with other devices the device being a resistive element, e.g. ballasting resistor
DE68925150T 1988-05-20 1989-05-19 Bipolartransistor und Verfahren zu dessen Herstellung Expired - Fee Related DE68925150T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/197,098 US4864379A (en) 1988-05-20 1988-05-20 Bipolar transistor with field shields

Publications (2)

Publication Number Publication Date
DE68925150D1 true DE68925150D1 (de) 1996-02-01
DE68925150T2 DE68925150T2 (de) 1996-08-01

Family

ID=22728047

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68925150T Expired - Fee Related DE68925150T2 (de) 1988-05-20 1989-05-19 Bipolartransistor und Verfahren zu dessen Herstellung

Country Status (4)

Country Link
US (1) US4864379A (de)
EP (1) EP0343879B1 (de)
JP (1) JPH0231426A (de)
DE (1) DE68925150T2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02168666A (ja) * 1988-09-29 1990-06-28 Mitsubishi Electric Corp 相補型半導体装置とその製造方法
US5223735A (en) * 1988-09-30 1993-06-29 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit device in which circuit functions can be remedied or changed and the method for producing the same
IT1236797B (it) * 1989-11-17 1993-04-02 St Microelectronics Srl Dispositivo monolitico di potenza a semiconduttore di tipo verticale con una protezione contro le correnti parassite.
US5374844A (en) * 1993-03-25 1994-12-20 Micrel, Inc. Bipolar transistor structure using ballast resistor
US5684326A (en) * 1995-02-24 1997-11-04 Telefonaktiebolaget L.M. Ericsson Emitter ballast bypass for radio frequency power transistors
SE509780C2 (sv) * 1997-07-04 1999-03-08 Ericsson Telefon Ab L M Bipolär effekttransistor och framställningsförfarande
US7029981B2 (en) * 2004-06-25 2006-04-18 Intersil Americas, Inc. Radiation hardened bipolar junction transistor

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3911473A (en) * 1968-10-12 1975-10-07 Philips Corp Improved surface breakdown protection for semiconductor devices
JPS5811750B2 (ja) * 1979-06-04 1983-03-04 株式会社日立製作所 高耐圧抵抗素子
JPS5633876A (en) * 1979-08-29 1981-04-04 Fujitsu Ltd Transistor
US4298402A (en) * 1980-02-04 1981-11-03 Fairchild Camera & Instrument Corp. Method of fabricating self-aligned lateral bipolar transistor utilizing special masking techniques
SE423946B (sv) * 1980-10-08 1982-06-14 Asea Ab Tyristor anordnad for sjelvtendning
US4430663A (en) * 1981-03-25 1984-02-07 Bell Telephone Laboratories, Incorporated Prevention of surface channels in silicon semiconductor devices
JPS5818964A (ja) * 1981-07-28 1983-02-03 Fujitsu Ltd 半導体装置
KR890004495B1 (ko) * 1984-11-29 1989-11-06 가부시끼가이샤 도오시바 반도체 장치
US4656496A (en) * 1985-02-04 1987-04-07 National Semiconductor Corporation Power transistor emitter ballasting
JPS62229975A (ja) * 1986-03-31 1987-10-08 Toshiba Corp 電力用トランジスタ

Also Published As

Publication number Publication date
EP0343879A2 (de) 1989-11-29
EP0343879A3 (en) 1990-08-16
EP0343879B1 (de) 1995-12-20
DE68925150T2 (de) 1996-08-01
US4864379A (en) 1989-09-05
JPH0231426A (ja) 1990-02-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee