DE69127949D1 - Thyristor und Verfahren zu dessen Herstellung - Google Patents

Thyristor und Verfahren zu dessen Herstellung

Info

Publication number
DE69127949D1
DE69127949D1 DE69127949T DE69127949T DE69127949D1 DE 69127949 D1 DE69127949 D1 DE 69127949D1 DE 69127949 T DE69127949 T DE 69127949T DE 69127949 T DE69127949 T DE 69127949T DE 69127949 D1 DE69127949 D1 DE 69127949D1
Authority
DE
Germany
Prior art keywords
thyristor
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69127949T
Other languages
English (en)
Other versions
DE69127949T2 (de
Inventor
Tomohide Terashima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE69127949D1 publication Critical patent/DE69127949D1/de
Publication of DE69127949T2 publication Critical patent/DE69127949T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66363—Thyristors
    • H01L29/66371—Thyristors structurally associated with another device, e.g. built-in diode
    • H01L29/66378—Thyristors structurally associated with another device, e.g. built-in diode the other device being a controlling field-effect device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H01L29/745—Gate-turn-off devices with turn-off by field effect
    • H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure
DE69127949T 1990-08-18 1991-08-01 Thyristor und Verfahren zu dessen Herstellung Expired - Fee Related DE69127949T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2217605A JPH0795597B2 (ja) 1990-08-18 1990-08-18 サイリスタおよびその製造方法

Publications (2)

Publication Number Publication Date
DE69127949D1 true DE69127949D1 (de) 1997-11-20
DE69127949T2 DE69127949T2 (de) 1998-03-19

Family

ID=16706910

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69127949T Expired - Fee Related DE69127949T2 (de) 1990-08-18 1991-08-01 Thyristor und Verfahren zu dessen Herstellung

Country Status (4)

Country Link
US (2) US5155569A (de)
EP (1) EP0476815B1 (de)
JP (1) JPH0795597B2 (de)
DE (1) DE69127949T2 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5151762A (en) * 1990-04-12 1992-09-29 Mitsubishi Denki Kabushiki Kaisha Semiconductor device, fabricating method thereof and flash control device using the semiconductor device
JPH04284669A (ja) * 1991-03-14 1992-10-09 Fuji Electric Co Ltd 絶縁ゲート制御サイリスタ
DE4135411A1 (de) * 1991-10-26 1993-04-29 Asea Brown Boveri Abschaltbares leistungshalbleiter-bauelement
KR930009112A (ko) * 1991-10-31 1993-05-22 사토 후미오 반도체장치
DE4210071A1 (de) * 1992-03-27 1993-09-30 Asea Brown Boveri MOS-gesteuerter Thyristor MCT
JP2810821B2 (ja) * 1992-03-30 1998-10-15 三菱電機株式会社 半導体装置及びその製造方法
JP2948985B2 (ja) * 1992-06-12 1999-09-13 三菱電機株式会社 半導体装置
US5426314A (en) * 1992-07-29 1995-06-20 Zaidan Hojin Handotai Kenkyu Shinkokai Insulated gate control static induction thyristor
JP2818348B2 (ja) * 1993-03-01 1998-10-30 株式会社東芝 半導体装置
DE4343900A1 (de) * 1993-12-22 1995-07-06 Abb Management Ag Halbleiterbauelement
US5412228A (en) * 1994-02-10 1995-05-02 North Carolina State University Multifunctional semiconductor switching device having gate-controlled regenerative and non-regenerative conduction modes, and method of operating same
US5471075A (en) * 1994-05-26 1995-11-28 North Carolina State University Dual-channel emitter switched thyristor with trench gate
US5488236A (en) * 1994-05-26 1996-01-30 North Carolina State University Latch-up resistant bipolar transistor with trench IGFET and buried collector
JP3249891B2 (ja) * 1994-09-19 2002-01-21 三菱電機株式会社 半導体装置およびその使用方法
US20040061170A1 (en) * 1995-07-31 2004-04-01 Ixys Corporation Reverse blocking IGBT
US6727527B1 (en) 1995-07-31 2004-04-27 Ixys Corporation Reverse blocking IGBT
US5698454A (en) * 1995-07-31 1997-12-16 Ixys Corporation Method of making a reverse blocking IGBT
JPH09246523A (ja) * 1996-03-13 1997-09-19 Mitsubishi Electric Corp 半導体装置
US5844259A (en) * 1996-03-19 1998-12-01 International Rectifier Corporation Vertical conduction MOS controlled thyristor with increased IGBT area and current limiting
US6936908B2 (en) 2001-05-03 2005-08-30 Ixys Corporation Forward and reverse blocking devices
JP3825765B2 (ja) * 2003-06-30 2006-09-27 株式会社東芝 半導体素子
CN103325679B (zh) * 2012-03-23 2017-05-10 立新半导体有限公司 一种半导体功率器件背面的制备方法
CN108417571A (zh) * 2018-05-18 2018-08-17 北京时代华诺科技有限公司 一种mos控制晶闸管芯片
CN112382568B (zh) * 2020-10-26 2023-10-10 西安理工大学 一种mos控制晶闸管的制造方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5824007B2 (ja) * 1979-07-16 1983-05-18 株式会社日立製作所 半導体装置の製造方法
JPS5784173A (en) * 1980-11-14 1982-05-26 Oki Electric Ind Co Ltd Manufacture of semicondcutor switch
DE3118365A1 (de) * 1981-05-08 1982-11-25 Siemens AG, 1000 Berlin und 8000 München Thyristor mit in den emitter eingefuegten steuerbaren emitter-kurzschlusspfaden
US5014102A (en) * 1982-04-01 1991-05-07 General Electric Company MOSFET-gated bipolar transistors and thyristors with both turn-on and turn-off capability having single-polarity gate input signal
GB2164790A (en) * 1984-09-19 1986-03-26 Philips Electronic Associated Merged bipolar and field effect transistors
JPS6221273A (ja) * 1985-07-20 1987-01-29 Matsushita Electric Works Ltd 絶縁ゲ−ト型サイリスタ
JPS62252168A (ja) * 1986-04-24 1987-11-02 Toshiba Corp 絶縁ゲ−ト型自己タ−ンオフサイリスタ
JPS63190384A (ja) * 1987-02-02 1988-08-05 Mitsubishi Electric Corp 半導体装置
JP2633545B2 (ja) * 1987-02-09 1997-07-23 株式会社東芝 高耐圧プレーナ型半導体素子
JPH0821713B2 (ja) * 1987-02-26 1996-03-04 株式会社東芝 導電変調型ｍｏｓｆｅｔ
JP2557367B2 (ja) * 1987-02-26 1996-11-27 株式会社東芝 絶縁ゲ−ト型自己タ−ンオフサイリスタ
US4857983A (en) * 1987-05-19 1989-08-15 General Electric Company Monolithically integrated semiconductor device having bidirectional conducting capability and method of fabrication
US5055417A (en) * 1987-06-11 1991-10-08 National Semiconductor Corporation Process for fabricating self-aligned high performance lateral action silicon-controlled rectifier and static random access memory cells
JPH0624244B2 (ja) * 1987-06-12 1994-03-30 株式会社日立製作所 複合半導体装置
ATE93654T1 (de) * 1988-04-22 1993-09-15 Asea Brown Boveri Abschaltbares leistungshalbleiterbauelement.
US4958211A (en) * 1988-09-01 1990-09-18 General Electric Company MCT providing turn-off control of arbitrarily large currents
CH679962A5 (de) * 1989-08-10 1992-05-15 Asea Brown Boveri
WO1991003078A1 (en) * 1989-08-17 1991-03-07 Ixys Corporation Insulated gate thyristor with gate turn on and turn off
JPH0795596B2 (ja) * 1989-10-23 1995-10-11 三菱電機株式会社 サイリスタ及びその製造方法
EP0438700A1 (de) * 1990-01-25 1991-07-31 Asea Brown Boveri Ag Abschaltbares, MOS-gesteuertes Leistungshalbleiter-Bauelement sowie Verfahren zu dessen Herstellung
IT1244239B (it) * 1990-05-31 1994-07-08 Sgs Thomson Microelectronics Terminazione dello stadio di potenza di un dispositivo monolitico a semicondutture e relativo processo di fabbricazione

Also Published As

Publication number Publication date
JPH0795597B2 (ja) 1995-10-11
EP0476815B1 (de) 1997-10-15
US5155569A (en) 1992-10-13
JPH0499384A (ja) 1992-03-31
EP0476815A2 (de) 1992-03-25
DE69127949T2 (de) 1998-03-19
US5324670A (en) 1994-06-28
EP0476815A3 (en) 1992-11-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee