DE69530633D1 - Thyristor und Verfahren zu seiner Herstellung - Google Patents

Thyristor und Verfahren zu seiner Herstellung

Info

Publication number
DE69530633D1
DE69530633D1 DE69530633T DE69530633T DE69530633D1 DE 69530633 D1 DE69530633 D1 DE 69530633D1 DE 69530633 T DE69530633 T DE 69530633T DE 69530633 T DE69530633 T DE 69530633T DE 69530633 D1 DE69530633 D1 DE 69530633D1
Authority
DE
Germany
Prior art keywords
thyristor
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69530633T
Other languages
English (en)
Other versions
DE69530633T2 (de
Inventor
Katsumi Satoh
Kenichi Honda
Kazuhiko Niwayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE69530633D1 publication Critical patent/DE69530633D1/de
Publication of DE69530633T2 publication Critical patent/DE69530633T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristor
    • H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristor the device being a photothyristor
DE69530633T 1994-02-24 1995-02-20 Thyristor und Verfahren zu seiner Herstellung Expired - Lifetime DE69530633T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2687194 1994-02-24
JP02687194A JP3299374B2 (ja) 1994-02-24 1994-02-24 サイリスタ及びその製造方法

Publications (2)

Publication Number Publication Date
DE69530633D1 true DE69530633D1 (de) 2003-06-12
DE69530633T2 DE69530633T2 (de) 2004-02-26

Family

ID=12205363

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69530633T Expired - Lifetime DE69530633T2 (de) 1994-02-24 1995-02-20 Thyristor und Verfahren zu seiner Herstellung
DE69533996T Expired - Lifetime DE69533996T2 (de) 1994-02-24 1995-02-20 Thyristor und Verfahren zur Herstellung

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69533996T Expired - Lifetime DE69533996T2 (de) 1994-02-24 1995-02-20 Thyristor und Verfahren zur Herstellung

Country Status (4)

Country Link
US (1) US5637886A (de)
EP (2) EP0669659B1 (de)
JP (1) JP3299374B2 (de)
DE (2) DE69530633T2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10300577B4 (de) 2003-01-10 2012-01-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Halbleiterbauelement mit vertikalem Leistungsbauelement aufweisend einen Trenngraben und Verfahren zu dessen Herstellung
US7057214B2 (en) * 2003-07-01 2006-06-06 Optiswitch Technology Corporation Light-activated semiconductor switches
DE102004025082B4 (de) * 2004-05-21 2006-12-28 Infineon Technologies Ag Elektrisch und durch Strahlung zündbarer Thyristor und Verfahren zu dessen Kontaktierung
DE102004062183B3 (de) * 2004-12-23 2006-06-08 eupec Europäische Gesellschaft für Leistungshalbleiter mbH Thyristoranordnung mit integriertem Schutzwiderstand und Verfahren zu deren Herstellung
DE102009045178A1 (de) * 2009-09-30 2011-04-07 Infineon Technologies Bipolar Gmbh & Co. Kg Zündstufenthyristor mit entkoppelter Zündstufe
US8536617B2 (en) * 2011-12-16 2013-09-17 General Electric Company Optically triggered semiconductor device and method for making the same
US9633998B2 (en) * 2012-09-13 2017-04-25 General Electric Company Semiconductor device and method for making the same

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE311701B (de) * 1966-07-07 1969-06-23 Asea Ab
JPS584467B2 (ja) * 1975-05-23 1983-01-26 三菱電機株式会社 ハンドウタイソウチ
US4261001A (en) * 1980-05-23 1981-04-07 General Electric Company Partially isolated amplifying gate thyristor with controllable dv/dt compensation, high di/dt capability, and high sensitivity
DE3268107D1 (en) * 1981-06-30 1986-02-06 Toshiba Kk Thyristor
JPS5914671A (ja) * 1982-07-16 1984-01-25 Nec Corp 増巾ゲ−トサイリスタ装置
US4595939A (en) * 1982-11-15 1986-06-17 Tokyo Shibaura Denki Kabushiki Kaisha Radiation-controllable thyristor with multiple, non-concentric amplified stages
JPS5989462A (ja) * 1982-11-15 1984-05-23 Toshiba Corp サイリスタ
IT1212799B (it) * 1983-12-15 1989-11-30 Ates Componenti Elettron Dispositivo elettronico ad interruttore comandato per la soppressione di transitori.
JPS618945A (ja) * 1984-06-25 1986-01-16 Nec Corp 半導体集積回路装置
FR2574594B1 (fr) * 1984-12-11 1987-01-16 Silicium Semiconducteur Ssc Structure integree de triac a commande par diac
JP2673694B2 (ja) * 1988-03-09 1997-11-05 株式会社日立製作所 サイリスタ

Also Published As

Publication number Publication date
EP0669659A2 (de) 1995-08-30
EP1267414B1 (de) 2005-02-02
JP3299374B2 (ja) 2002-07-08
JPH07235664A (ja) 1995-09-05
EP1267414A3 (de) 2003-04-23
DE69533996D1 (de) 2005-03-10
EP1267414A2 (de) 2002-12-18
DE69533996T2 (de) 2006-01-05
EP0669659A3 (de) 1999-05-26
DE69530633T2 (de) 2004-02-26
EP0669659B1 (de) 2003-05-07
US5637886A (en) 1997-06-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)