DE69030205T2 - Bipolarer Transistor und Verfahren zu dessen Herstellung - Google Patents

Bipolarer Transistor und Verfahren zu dessen Herstellung

Info

Publication number
DE69030205T2
DE69030205T2 DE1990630205 DE69030205T DE69030205T2 DE 69030205 T2 DE69030205 T2 DE 69030205T2 DE 1990630205 DE1990630205 DE 1990630205 DE 69030205 T DE69030205 T DE 69030205T DE 69030205 T2 DE69030205 T2 DE 69030205T2
Authority
DE
Germany
Prior art keywords
production
bipolar transistor
bipolar
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE1990630205
Other languages
English (en)
Other versions
DE69030205D1 (de
Inventor
Hisayo Momose
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69030205D1 publication Critical patent/DE69030205D1/de
Publication of DE69030205T2 publication Critical patent/DE69030205T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8248—Combination of bipolar and field-effect technology
    • H01L21/8249—Bipolar and MOS technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
DE1990630205 1989-01-09 1990-01-09 Bipolarer Transistor und Verfahren zu dessen Herstellung Expired - Fee Related DE69030205T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1002460A JP2504553B2 (ja) 1989-01-09 1989-01-09 バイポ―ラトランジスタを有する半導体装置の製造方法

Publications (2)

Publication Number Publication Date
DE69030205D1 DE69030205D1 (de) 1997-04-24
DE69030205T2 true DE69030205T2 (de) 1997-08-07

Family

ID=11529913

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1990630205 Expired - Fee Related DE69030205T2 (de) 1989-01-09 1990-01-09 Bipolarer Transistor und Verfahren zu dessen Herstellung

Country Status (3)

Country Link
EP (1) EP0378164B1 (de)
JP (1) JP2504553B2 (de)
DE (1) DE69030205T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2663156A1 (fr) * 1990-06-11 1991-12-13 Sgs Thomson Microelectronics Transistor bipolaire supportant des polarisations inverses et procede de fabrication.
JP2707161B2 (ja) * 1991-03-18 1998-01-28 三菱電機株式会社 半導体装置
FR2703831A1 (fr) * 1993-04-07 1994-10-14 Philips Composants Dispositif semiconducteur comprenant un transistor latéral.
DE19511251A1 (de) * 1995-03-27 1996-10-02 Siemens Ag Bipolarer Siliziumtransistor
DE102018112378A1 (de) * 2018-05-23 2019-11-28 Infineon Technologies Ag Halbleiterbauelemente und Verfahren zum Bilden von Halbleiterbauelementen

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2911726C2 (de) * 1978-03-27 1985-08-01 Ncr Corp., Dayton, Ohio Verfahren zur Herstellung eines Feldeffekttransistors
JPS6245065A (ja) * 1985-08-22 1987-02-27 Nec Corp 半導体装置の製造方法
JPS62210667A (ja) * 1986-03-11 1987-09-16 Fujitsu Ltd 半導体記憶装置
JPH0834214B2 (ja) * 1986-05-21 1996-03-29 株式会社日立製作所 半導体装置の製造方法
DE3784974T2 (de) * 1986-07-16 1993-08-26 Texas Instruments Inc Selbstjustierter vlsi bipolarer transistor.

Also Published As

Publication number Publication date
EP0378164B1 (de) 1997-03-19
JP2504553B2 (ja) 1996-06-05
EP0378164A2 (de) 1990-07-18
DE69030205D1 (de) 1997-04-24
EP0378164A3 (de) 1990-12-12
JPH02181933A (ja) 1990-07-16

Similar Documents

Publication Publication Date Title
DE3780560D1 (de) Fuehler und verfahren zu dessen herstellung.
DE68924132T2 (de) Halbleiterbauteil und Verfahren zur dessen Herstellung.
DE68907057T2 (de) Nährstoffzusammensetzung und verfahren zu deren herstellung.
DE3650552D1 (de) Statistisches Copolymer und Verfahren zu dessen Herstellung
DE69107949D1 (de) MOS-gesteuerter Thyristor und Verfahren zu dessen Herstellung.
DE3580206D1 (de) Bipolarer transistor und verfahren zu seiner herstellung.
DE69127949D1 (de) Thyristor und Verfahren zu dessen Herstellung
DE69017348D1 (de) Thyristor und Verfahren zu dessen Herstellung.
DE3581417D1 (de) Lateraler bipolarer transistor und verfahren zu seiner herstellung.
DE69032446D1 (de) Halbleiterbauelement und Verfahren zu dessen Herstellung
DE69111327T2 (de) Block von Mikroverbindungsstiften und Verfahren zu dessen Herstellung.
DE3582036D1 (de) Integrierbarer mikrowellenbipolartransistor und verfahren zu dessen herstellung.
DE3751753D1 (de) Kreuzstrom-filtrationsapparat und verfahren zu dessen herstellung
DE68925150D1 (de) Bipolartransistor und Verfahren zu dessen Herstellung
DE69030205D1 (de) Bipolarer Transistor und Verfahren zu dessen Herstellung
DE3787691T2 (de) MOS-Feldeffekttransistor und Verfahren zu dessen Herstellung.
ATA257387A (de) Antibiotikum a42125 und verfahren zu seiner herstellung
DE3678112D1 (de) Hochfrequenz-transistor und verfahren zu dessen herstellung.
DE3867957D1 (de) Modifiziertes polytetrafluoraethylen und verfahren zu seiner herstellung.
DE69131093D1 (de) Bipolartransistor und Verfahren zu dessen Herstellung
DE69030980D1 (de) Halbleiteranordnung mit CCD und dessen peripheren Bipolartransistoren und Verfahren zu dessen Herstellung
DE3765796D1 (de) Halbleiterbauelement und verfahren zu dessen herstellung.
AT399879B (de) Dihydro-pyrimido-thiazin-derivate und verfahren zu ihrer herstellung
DE3777245D1 (de) Protein und verfahren zu dessen herstellung.
DE3770732D1 (de) Cyclohexandionderivat und verfahren zu seiner herstellung.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee