DE69030980D1 - Halbleiteranordnung mit CCD und dessen peripheren Bipolartransistoren und Verfahren zu dessen Herstellung - Google Patents

Halbleiteranordnung mit CCD und dessen peripheren Bipolartransistoren und Verfahren zu dessen Herstellung

Info

Publication number
DE69030980D1
DE69030980D1 DE69030980T DE69030980T DE69030980D1 DE 69030980 D1 DE69030980 D1 DE 69030980D1 DE 69030980 T DE69030980 T DE 69030980T DE 69030980 T DE69030980 T DE 69030980T DE 69030980 D1 DE69030980 D1 DE 69030980D1
Authority
DE
Germany
Prior art keywords
ccd
peripheral
production
bipolar transistors
semiconductor arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69030980T
Other languages
English (en)
Other versions
DE69030980T2 (de
Inventor
Kazuo Kihara
Minoru Taguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69030980D1 publication Critical patent/DE69030980D1/de
Publication of DE69030980T2 publication Critical patent/DE69030980T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE1990630980 1989-04-13 1990-04-12 Halbleiteranordnung mit CCD und dessen peripheren Bipolartransistoren und Verfahren zu dessen Herstellung Expired - Fee Related DE69030980T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1093607A JPH0770615B2 (ja) 1989-04-13 1989-04-13 電荷転送デバイスを含む半導体装置の製造方法

Publications (2)

Publication Number Publication Date
DE69030980D1 true DE69030980D1 (de) 1997-08-07
DE69030980T2 DE69030980T2 (de) 1997-11-27

Family

ID=14087017

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1990630980 Expired - Fee Related DE69030980T2 (de) 1989-04-13 1990-04-12 Halbleiteranordnung mit CCD und dessen peripheren Bipolartransistoren und Verfahren zu dessen Herstellung

Country Status (3)

Country Link
EP (1) EP0392536B1 (de)
JP (1) JPH0770615B2 (de)
DE (1) DE69030980T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0770703B2 (ja) * 1989-05-22 1995-07-31 株式会社東芝 電荷転送デバイスを含む半導体装置およびその製造方法
JPH07109860B2 (ja) * 1990-01-19 1995-11-22 株式会社東芝 電荷転送デバイスを含む半導体装置およびその製造方法
JPH07109861B2 (ja) * 1990-01-19 1995-11-22 株式会社東芝 電荷転送デバイスを含む半導体装置およびその製造方法
US5260228A (en) * 1990-01-19 1993-11-09 Kabushiki Kaisha Toshiba Method of making a semiconductor device having a charge transfer device, MOSFETs, and bipolar transistors
JP2642523B2 (ja) * 1991-03-19 1997-08-20 株式会社東芝 電荷結合素子を持つ半導体集積回路装置の製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2541510A1 (de) * 1974-09-17 1976-03-25 Westinghouse Electric Corp Verarbeitungssystem fuer diskrete analogsignale
US4152715A (en) * 1977-11-28 1979-05-01 The United States Of America As Represented By The Secretary Of The Army Silicon base CCD-bipolar transistor compatible methods and products
US4253168A (en) * 1978-10-23 1981-02-24 Westinghouse Electric Corp. CCD Signal processor
EP0067661A1 (de) * 1981-06-15 1982-12-22 Kabushiki Kaisha Toshiba Halbleiteranordnung und Verfahren zu seiner Herstellung
JPS60132367A (ja) * 1983-12-20 1985-07-15 Nec Corp 電荷転送装置
JPS60141157U (ja) * 1984-02-25 1985-09-18 ソニー株式会社 電荷結合素子
JPS6153762A (ja) * 1984-08-24 1986-03-17 Hitachi Ltd 半導体集積回路装置
US4642877A (en) * 1985-07-01 1987-02-17 Texas Instruments Incorporated Method for making charge coupled device (CCD)-complementary metal oxide semiconductor (CMOS) devices
JPS6442165A (en) * 1987-08-07 1989-02-14 Fujitsu Ltd Coms semiconductor ic device

Also Published As

Publication number Publication date
JPH02271661A (ja) 1990-11-06
EP0392536B1 (de) 1997-07-02
EP0392536A3 (de) 1991-09-04
JPH0770615B2 (ja) 1995-07-31
DE69030980T2 (de) 1997-11-27
EP0392536A2 (de) 1990-10-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee