DE3681723D1 - Transistor mit permeabler basis und verfahren zu seiner herstellung. - Google Patents

Transistor mit permeabler basis und verfahren zu seiner herstellung.

Info

Publication number
DE3681723D1
DE3681723D1 DE8686420263T DE3681723T DE3681723D1 DE 3681723 D1 DE3681723 D1 DE 3681723D1 DE 8686420263 T DE8686420263 T DE 8686420263T DE 3681723 T DE3681723 T DE 3681723T DE 3681723 D1 DE3681723 D1 DE 3681723D1
Authority
DE
Germany
Prior art keywords
transistor
production
permeable base
permeable
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686420263T
Other languages
English (en)
Inventor
Emmanuel Rosencher
Sylvain Delage
Gilbert Vincent
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
INST NAT SCIENCES APPLIQ
Etat Francais
Original Assignee
INST NAT SCIENCES APPLIQ
Etat Francais
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by INST NAT SCIENCES APPLIQ, Etat Francais filed Critical INST NAT SCIENCES APPLIQ
Application granted granted Critical
Publication of DE3681723D1 publication Critical patent/DE3681723D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66416—Static induction transistors [SIT]
    • H01L29/66424—Permeable base transistors [PBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/7722—Field effect transistors using static field induced regions, e.g. SIT, PBT

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
DE8686420263T 1985-10-29 1986-10-27 Transistor mit permeabler basis und verfahren zu seiner herstellung. Expired - Lifetime DE3681723D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8516329A FR2589280B1 (fr) 1985-10-29 1985-10-29 Transistor a base permeable et procedes de fabrication

Publications (1)

Publication Number Publication Date
DE3681723D1 true DE3681723D1 (de) 1991-10-31

Family

ID=9324473

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686420263T Expired - Lifetime DE3681723D1 (de) 1985-10-29 1986-10-27 Transistor mit permeabler basis und verfahren zu seiner herstellung.

Country Status (3)

Country Link
EP (1) EP0230840B1 (de)
DE (1) DE3681723D1 (de)
FR (1) FR2589280B1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2613537B1 (fr) * 1987-03-30 1990-03-09 Pfister Jean Claude Transistor a base permeable et procede de fabrication
FR2624307B1 (fr) * 1987-12-02 1990-05-18 Rosencher Emmanuel Transistor a base permeable
GB2237929A (en) * 1989-10-23 1991-05-15 Philips Electronic Associated A method of manufacturing a semiconductor device
FR2658952A1 (fr) * 1990-02-27 1991-08-30 Thomson Csf Procede de realisation de memoires haute densite.
FR2663466A1 (fr) * 1990-06-15 1991-12-20 Thomson Csf Composant semiconducteur a jonction schottky pour amplification hyperfrequence et circuits logiques rapides, et procede de realisation d'un tel composant.
DE4437016C1 (de) * 1994-10-17 1996-01-18 Forschungszentrum Juelich Gmbh Permeable Base Transistor und Verfahren zu seiner Herstellung

Also Published As

Publication number Publication date
EP0230840B1 (de) 1991-09-25
FR2589280B1 (fr) 1988-12-02
FR2589280A1 (fr) 1987-04-30
EP0230840A1 (de) 1987-08-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee