FR2624307B1 - Transistor a base permeable - Google Patents
Transistor a base permeableInfo
- Publication number
- FR2624307B1 FR2624307B1 FR8716726A FR8716726A FR2624307B1 FR 2624307 B1 FR2624307 B1 FR 2624307B1 FR 8716726 A FR8716726 A FR 8716726A FR 8716726 A FR8716726 A FR 8716726A FR 2624307 B1 FR2624307 B1 FR 2624307B1
- Authority
- FR
- France
- Prior art keywords
- permeable
- based transistor
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66416—Static induction transistors [SIT]
- H01L29/66424—Permeable base transistors [PBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/7722—Field effect transistors using static field induced regions, e.g. SIT, PBT
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8716726A FR2624307B1 (fr) | 1987-12-02 | 1987-12-02 | Transistor a base permeable |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8716726A FR2624307B1 (fr) | 1987-12-02 | 1987-12-02 | Transistor a base permeable |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2624307A1 FR2624307A1 (fr) | 1989-06-09 |
| FR2624307B1 true FR2624307B1 (fr) | 1990-05-18 |
Family
ID=9357392
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8716726A Expired - Lifetime FR2624307B1 (fr) | 1987-12-02 | 1987-12-02 | Transistor a base permeable |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2624307B1 (fr) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2480501A1 (fr) * | 1980-04-14 | 1981-10-16 | Thomson Csf | Dispositif semi-conducteur a grille profonde accessible par la surface et procede de fabrication |
| US4521952A (en) * | 1982-12-02 | 1985-06-11 | International Business Machines Corporation | Method of making integrated circuits using metal silicide contacts |
| US4611384A (en) * | 1985-04-30 | 1986-09-16 | Gte Laboratories Incorporated | Method of making junction field effect transistor of static induction type |
| FR2589280B1 (fr) * | 1985-10-29 | 1988-12-02 | France Etat | Transistor a base permeable et procedes de fabrication |
-
1987
- 1987-12-02 FR FR8716726A patent/FR2624307B1/fr not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| FR2624307A1 (fr) | 1989-06-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| TP | Transmission of property | ||
| TP | Transmission of property | ||
| ST | Notification of lapse |