DE68917197D1 - Bipolarer Leistungshalbleiteranordnung und Verfahren zur ihrer Herstellung. - Google Patents

Bipolarer Leistungshalbleiteranordnung und Verfahren zur ihrer Herstellung.

Info

Publication number
DE68917197D1
DE68917197D1 DE68917197T DE68917197T DE68917197D1 DE 68917197 D1 DE68917197 D1 DE 68917197D1 DE 68917197 T DE68917197 T DE 68917197T DE 68917197 T DE68917197 T DE 68917197T DE 68917197 D1 DE68917197 D1 DE 68917197D1
Authority
DE
Germany
Prior art keywords
production
semiconductor device
power semiconductor
bipolar power
bipolar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68917197T
Other languages
English (en)
Other versions
DE68917197T2 (de
Inventor
Carmelo Oliveri
Alfonso Patti
Sergio Fleres
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
SGS Thomson Microelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SRL filed Critical SGS Thomson Microelectronics SRL
Publication of DE68917197D1 publication Critical patent/DE68917197D1/de
Application granted granted Critical
Publication of DE68917197T2 publication Critical patent/DE68917197T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H01L29/66295—Silicon vertical transistors with main current going through the whole silicon substrate, e.g. power bipolar transistor
    • H01L29/66303—Silicon vertical transistors with main current going through the whole silicon substrate, e.g. power bipolar transistor with multi-emitter, e.g. interdigitated, multi-cellular or distributed emitter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H01L29/0813—Non-interconnected multi-emitter structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41708—Emitter or collector electrodes for bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42304—Base electrodes for bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
DE68917197T 1988-05-05 1989-05-03 Bipolarer Leistungshalbleiteranordnung und Verfahren zur ihrer Herstellung. Expired - Fee Related DE68917197T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8806611A IT1234517B (it) 1988-05-05 1988-05-05 Dispositivo a semiconduttore bipolare di potenza e procedimento per la sua fabbricazione

Publications (2)

Publication Number Publication Date
DE68917197D1 true DE68917197D1 (de) 1994-09-08
DE68917197T2 DE68917197T2 (de) 1995-03-16

Family

ID=11121393

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68917197T Expired - Fee Related DE68917197T2 (de) 1988-05-05 1989-05-03 Bipolarer Leistungshalbleiteranordnung und Verfahren zur ihrer Herstellung.

Country Status (5)

Country Link
US (1) US5032887A (de)
EP (1) EP0341221B1 (de)
JP (1) JPH0216740A (de)
DE (1) DE68917197T2 (de)
IT (1) IT1234517B (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0490514A (ja) * 1990-08-02 1992-03-24 Semiconductor Energy Lab Co Ltd 半導体装置
FR2687843A1 (fr) * 1992-02-24 1993-08-27 Motorola Semiconducteurs Transistor bipolaire lateral pnp et procede de fabrication.
EP0666600B1 (de) * 1994-02-02 1999-09-15 ROHM Co., Ltd. Leistungs-Bipolartransistor
SE516226C2 (sv) * 1995-04-10 2001-12-03 Forskarpatent I Linkoeping Ab Bipolära transistorer med extra bas-kollektor- och bas- emitterstrukturer
GB0318146D0 (en) 2003-08-02 2003-09-03 Zetex Plc Bipolar transistor with a low saturation voltage
US7598521B2 (en) * 2004-03-29 2009-10-06 Sanyo Electric Co., Ltd. Semiconductor device in which the emitter resistance is reduced
US9331186B2 (en) 2009-12-21 2016-05-03 Nxp B.V. Semiconductor device with multilayer contact and method of manufacturing the same

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3381183A (en) * 1965-06-21 1968-04-30 Rca Corp High power multi-emitter transistor
US4008484A (en) * 1968-04-04 1977-02-15 Fujitsu Ltd. Semiconductor device having multilayered electrode structure
US3843425A (en) * 1971-04-05 1974-10-22 Rca Corp Overlay transistor employing highly conductive semiconductor grid and method for making
US4291319A (en) * 1976-05-19 1981-09-22 National Semiconductor Corporation Open base bipolar transistor protective device
JPS5397379A (en) * 1977-02-07 1978-08-25 Fujitsu Ltd Transistor
US4581626A (en) * 1977-10-25 1986-04-08 General Electric Company Thyristor cathode and transistor emitter structures with insulator islands
US4417265A (en) * 1981-03-26 1983-11-22 National Semiconductor Corporation Lateral PNP power transistor
JPS57160160A (en) * 1981-03-27 1982-10-02 Nippon Denso Co Ltd Semiconductor device
JPS5943830B2 (ja) * 1981-10-23 1984-10-24 株式会社東芝 圧接型半導体装置
FR2545654B1 (fr) * 1983-05-03 1985-09-13 Fairchild Camera Instr Co Composant semi-conducteur de puissance, et procede pour la fabrication
JPS601846A (ja) * 1983-06-18 1985-01-08 Toshiba Corp 多層配線構造の半導体装置とその製造方法
JPS60132366A (ja) * 1983-12-21 1985-07-15 Toshiba Corp 半導体装置
EP0186140B1 (de) * 1984-12-27 1989-09-27 Siemens Aktiengesellschaft Halbleiter-Leistungsschalter
US4656496A (en) * 1985-02-04 1987-04-07 National Semiconductor Corporation Power transistor emitter ballasting
JPS6236305U (de) * 1985-08-20 1987-03-04

Also Published As

Publication number Publication date
IT1234517B (it) 1992-05-19
EP0341221A3 (en) 1990-08-22
EP0341221B1 (de) 1994-08-03
EP0341221A2 (de) 1989-11-08
IT8806611A0 (it) 1988-05-05
DE68917197T2 (de) 1995-03-16
US5032887A (en) 1991-07-16
JPH0216740A (ja) 1990-01-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee