DE68918967D1 - Bipolare Transistorstruktur und Verfahren zu ihrer Herstellung. - Google Patents

Bipolare Transistorstruktur und Verfahren zu ihrer Herstellung.

Info

Publication number
DE68918967D1
DE68918967D1 DE68918967T DE68918967T DE68918967D1 DE 68918967 D1 DE68918967 D1 DE 68918967D1 DE 68918967 T DE68918967 T DE 68918967T DE 68918967 T DE68918967 T DE 68918967T DE 68918967 D1 DE68918967 D1 DE 68918967D1
Authority
DE
Germany
Prior art keywords
making
bipolar transistor
transistor structure
bipolar
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68918967T
Other languages
English (en)
Other versions
DE68918967T2 (de
Inventor
Yoshihisa Okita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Application granted granted Critical
Publication of DE68918967D1 publication Critical patent/DE68918967D1/de
Publication of DE68918967T2 publication Critical patent/DE68918967T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H01L29/66287—Silicon vertical transistors with a single crystalline emitter, collector or base including extrinsic, link or graft base formed on the silicon substrate, e.g. by epitaxy, recrystallisation, after insulating device isolation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7317—Bipolar thin film transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
DE68918967T 1988-03-10 1989-03-06 Bipolare Transistorstruktur und Verfahren zu ihrer Herstellung. Expired - Fee Related DE68918967T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63055023A JPH01230270A (ja) 1988-03-10 1988-03-10 バイポーラ型トランジスタ及びその製造方法

Publications (2)

Publication Number Publication Date
DE68918967D1 true DE68918967D1 (de) 1994-12-01
DE68918967T2 DE68918967T2 (de) 1995-03-02

Family

ID=12987073

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68918967T Expired - Fee Related DE68918967T2 (de) 1988-03-10 1989-03-06 Bipolare Transistorstruktur und Verfahren zu ihrer Herstellung.

Country Status (4)

Country Link
US (1) US4974045A (de)
EP (1) EP0332106B1 (de)
JP (1) JPH01230270A (de)
DE (1) DE68918967T2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5234844A (en) * 1988-03-10 1993-08-10 Oki Electric Industry Co., Inc. Process for forming bipolar transistor structure
US5227317A (en) * 1989-04-21 1993-07-13 Hitachi, Ltd. Method of manufacturing semiconductor integrated circuit bipolar transistor device
JPH02280340A (ja) * 1989-04-21 1990-11-16 Hitachi Ltd 半導体集積回路装置の製造方法
US5177582A (en) * 1989-09-22 1993-01-05 Siemens Aktiengesellschaft CMOS-compatible bipolar transistor with reduced collector/substrate capacitance and process for producing the same
US5017990A (en) * 1989-12-01 1991-05-21 International Business Machines Corporation Raised base bipolar transistor structure and its method of fabrication
JPH0785476B2 (ja) * 1991-06-14 1995-09-13 インターナショナル・ビジネス・マシーンズ・コーポレイション エミッタ埋め込み型バイポーラ・トランジスタ構造
US5286996A (en) * 1991-12-31 1994-02-15 Purdue Research Foundation Triple self-aligned bipolar junction transistor
JP3172031B2 (ja) * 1994-03-15 2001-06-04 株式会社東芝 半導体装置の製造方法
US5481126A (en) * 1994-09-27 1996-01-02 Purdue Research Foundation Semiconductor-on-insulator electronic devices having trench isolated monocrystalline active regions
US5494837A (en) * 1994-09-27 1996-02-27 Purdue Research Foundation Method of forming semiconductor-on-insulator electronic devices by growing monocrystalline semiconducting regions from trench sidewalls
JP2630275B2 (ja) * 1994-10-12 1997-07-16 日本電気株式会社 半導体装置の製造方法
KR100191270B1 (ko) * 1995-09-29 1999-06-15 윤종용 바이폴라 반도체장치 및 그의 제조방법
KR100190029B1 (ko) * 1996-03-19 1999-06-01 윤종용 바이씨모스 에스램 소자의 제조방법
KR100248504B1 (ko) * 1997-04-01 2000-03-15 윤종용 바이폴라 트랜지스터 및 그의 제조 방법
US6060388A (en) * 1997-10-29 2000-05-09 International Business Machines Corporation Conductors for microelectronic circuits and method of manufacture
KR100660722B1 (ko) * 2005-12-30 2006-12-21 동부일렉트로닉스 주식회사 바이폴라 접합 트랜지스터 및 그 제조 방법
EP2740149B1 (de) * 2011-08-05 2020-05-20 IMEC vzw Verfahren zur bildung von mustern mit unterschiedlich dotierten regionen

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3600651A (en) * 1969-12-08 1971-08-17 Fairchild Camera Instr Co Bipolar and field-effect transistor using polycrystalline epitaxial deposited silicon
US4425574A (en) * 1979-06-29 1984-01-10 International Business Machines Corporation Buried injector memory cell formed from vertical complementary bipolar transistor circuits and method of fabrication therefor
JPS59126671A (ja) * 1983-01-10 1984-07-21 Mitsubishi Electric Corp 半導体装置
JPS60117664A (ja) * 1983-11-30 1985-06-25 Fujitsu Ltd バイポ−ラ半導体装置
US4686763A (en) * 1985-10-02 1987-08-18 Advanced Micro Devices, Inc. Method of making a planar polysilicon bipolar device
US4663831A (en) * 1985-10-08 1987-05-12 Motorola, Inc. Method of forming transistors with poly-sidewall contacts utilizing deposition of polycrystalline and insulating layers combined with selective etching and oxidation of said layers
US4764801A (en) * 1985-10-08 1988-08-16 Motorola Inc. Poly-sidewall contact transistors
US4696097A (en) * 1985-10-08 1987-09-29 Motorola, Inc. Poly-sidewall contact semiconductor device method
US4849371A (en) * 1986-12-22 1989-07-18 Motorola Inc. Monocrystalline semiconductor buried layers for electrical contacts to semiconductor devices

Also Published As

Publication number Publication date
JPH01230270A (ja) 1989-09-13
DE68918967T2 (de) 1995-03-02
EP0332106A2 (de) 1989-09-13
US4974045A (en) 1990-11-27
EP0332106A3 (de) 1991-08-28
EP0332106B1 (de) 1994-10-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee