DE69131093D1 - Bipolartransistor und Verfahren zu dessen Herstellung - Google Patents

Bipolartransistor und Verfahren zu dessen Herstellung

Info

Publication number
DE69131093D1
DE69131093D1 DE69131093T DE69131093T DE69131093D1 DE 69131093 D1 DE69131093 D1 DE 69131093D1 DE 69131093 T DE69131093 T DE 69131093T DE 69131093 T DE69131093 T DE 69131093T DE 69131093 D1 DE69131093 D1 DE 69131093D1
Authority
DE
Germany
Prior art keywords
production
bipolar transistor
bipolar
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69131093T
Other languages
English (en)
Other versions
DE69131093T2 (de
Inventor
Richard Henry Lane
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of DE69131093D1 publication Critical patent/DE69131093D1/de
Application granted granted Critical
Publication of DE69131093T2 publication Critical patent/DE69131093T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System the conductive layers comprising semiconducting material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41708—Emitter or collector electrodes for bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/01—Bipolar transistors-ion implantation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/123—Polycrystalline diffuse anneal
DE69131093T 1990-12-26 1991-12-18 Bipolartransistor und Verfahren zu dessen Herstellung Expired - Fee Related DE69131093T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/633,906 US5204275A (en) 1990-12-26 1990-12-26 Method for fabricating compact bipolar transistor

Publications (2)

Publication Number Publication Date
DE69131093D1 true DE69131093D1 (de) 1999-05-12
DE69131093T2 DE69131093T2 (de) 1999-10-14

Family

ID=24541622

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69131093T Expired - Fee Related DE69131093T2 (de) 1990-12-26 1991-12-18 Bipolartransistor und Verfahren zu dessen Herstellung

Country Status (4)

Country Link
US (1) US5204275A (de)
EP (1) EP0493853B1 (de)
JP (1) JP2622047B2 (de)
DE (1) DE69131093T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100292330B1 (ko) * 1992-05-01 2001-09-17 이데이 노부유끼 반도체장치와그제조방법및실리콘절연기판의제조방법
BE1007670A3 (nl) * 1993-10-25 1995-09-12 Philips Electronics Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij een halfgeleiderzone wordt gevormd door diffusie vanuit een strook polykristallijn silicium.
FR2716294B1 (fr) 1994-01-28 1996-05-31 Sgs Thomson Microelectronics Procédé de réalisation d'un transistor bipolaire pour protection d'un circuit intégré contre les décharges électrostatiques.
US6528861B1 (en) 2001-06-15 2003-03-04 National Semiconductor Corporation High performance bipolar transistor architecture

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4712125A (en) * 1982-08-06 1987-12-08 International Business Machines Corporation Structure for contacting a narrow width PN junction region
JPS59220968A (ja) * 1983-05-31 1984-12-12 Fujitsu Ltd 半導体装置の製造方法
US4641170A (en) * 1983-12-12 1987-02-03 International Business Machines Corporation Self-aligned lateral bipolar transistors
JPS60216580A (ja) * 1984-04-12 1985-10-30 Fujitsu Ltd 半導体装置の製造方法
JPS60216581A (ja) * 1984-04-12 1985-10-30 Fujitsu Ltd 半導体装置の製造方法
JPS61237466A (ja) * 1985-04-15 1986-10-22 Canon Inc バイポ−ラトランジスタの製造方法
US4678537A (en) * 1985-05-23 1987-07-07 Sony Corporation Method of manufacturing semiconductor devices
US4722909A (en) * 1985-09-26 1988-02-02 Motorola, Inc. Removable sidewall spacer for lightly doped drain formation using two mask levels
DE3787110D1 (de) * 1986-03-21 1993-09-30 Siemens Ag Verfahren zur Herstellung einer Bipolartransistorstruktur für Höchstgeschwindigkeitsschaltung.
JPS62243361A (ja) * 1986-04-15 1987-10-23 Matsushita Electronics Corp 半導体装置の製造方法
US4722908A (en) * 1986-08-28 1988-02-02 Fairchild Semiconductor Corporation Fabrication of a bipolar transistor with a polysilicon ribbon
DE3882251T2 (de) * 1987-01-30 1993-10-28 Texas Instruments Inc Verfahren zum Herstellen eines bipolaren Transistors unter Verwendung von CMOS-Techniken.
JPS6445164A (en) * 1987-08-13 1989-02-17 Hitachi Ltd Semiconductor device
JPH01291461A (ja) * 1988-05-18 1989-11-24 Mitsubishi Electric Corp 半導体装置，およびその製造方法
JPH02126642A (ja) * 1988-11-07 1990-05-15 Hitachi Ltd 半導体装置及びその製造方法

Also Published As

Publication number Publication date
EP0493853A1 (de) 1992-07-08
EP0493853B1 (de) 1999-04-07
JP2622047B2 (ja) 1997-06-18
US5204275A (en) 1993-04-20
DE69131093T2 (de) 1999-10-14
JPH04294545A (ja) 1992-10-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8328 Change in the person/name/address of the agent

Representative=s name: VOLMER, G., DIPL.-ING., PAT.-ANW., 52066 AACHEN

8339 Ceased/non-payment of the annual fee