DE69132972D1 - Supraleitender Feldeffekttransistor mit inverser MISFET-Struktur und Verfahren zu dessen Herstellung - Google Patents
Supraleitender Feldeffekttransistor mit inverser MISFET-Struktur und Verfahren zu dessen HerstellungInfo
- Publication number
- DE69132972D1 DE69132972D1 DE69132972T DE69132972T DE69132972D1 DE 69132972 D1 DE69132972 D1 DE 69132972D1 DE 69132972 T DE69132972 T DE 69132972T DE 69132972 T DE69132972 T DE 69132972T DE 69132972 D1 DE69132972 D1 DE 69132972D1
- Authority
- DE
- Germany
- Prior art keywords
- inverse
- production
- field effect
- effect transistor
- superconducting field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/20—Permanent superconducting devices
- H10N60/205—Permanent superconducting devices having three or more electrodes, e.g. transistor-like structures
- H10N60/207—Field effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
- H10N60/0604—Monocrystalline substrates, e.g. epitaxial growth
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
- Y10S505/701—Coated or thin film device, i.e. active or passive
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
- Y10S505/706—Contact pads or leads bonded to superconductor
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP91810006A EP0494580B1 (de) | 1991-01-07 | 1991-01-07 | Supraleitender Feldeffekttransistor mit inverser MISFET-Struktur und Verfahren zu dessen Herstellung |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69132972D1 true DE69132972D1 (de) | 2002-05-08 |
DE69132972T2 DE69132972T2 (de) | 2003-03-13 |
Family
ID=8208808
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69132972T Expired - Fee Related DE69132972T2 (de) | 1991-01-07 | 1991-01-07 | Supraleitender Feldeffekttransistor mit inverser MISFET-Struktur und Verfahren zu dessen Herstellung |
Country Status (10)
Country | Link |
---|---|
US (3) | US5278136A (de) |
EP (1) | EP0494580B1 (de) |
JP (1) | JPH0834321B2 (de) |
KR (1) | KR960002292B1 (de) |
CN (3) | CN1099138C (de) |
CA (1) | CA2058780A1 (de) |
DE (1) | DE69132972T2 (de) |
MY (1) | MY109375A (de) |
SG (1) | SG46182A1 (de) |
TW (1) | TW238399B (de) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2674374A1 (fr) * | 1991-03-22 | 1992-09-25 | Bull Sa | Transistor supraconducteur a effet de champ et procede de fabrication d'une structure multicouche telle que celle utilisee dans le transistor. |
CA2084174C (en) * | 1991-11-30 | 1997-07-29 | Takao Nakamura | Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material and method for manufacturing thesame |
EP0633331B1 (de) * | 1993-07-02 | 2000-01-19 | Sumitomo Electric Industries, Limited | Verfahren zur Herstellung eines hochkristallinen, dünnen SrTiO3 Oxidfilms |
KR0148598B1 (ko) * | 1994-11-21 | 1998-10-15 | 정선종 | 두꺼운 초전도채널층을 구비한 고온초전도 전계효과 트랜지스터의 제조방법 |
KR0148596B1 (ko) * | 1994-11-28 | 1998-10-15 | 양승택 | 결정 입계 채널을 갖는 초전도 전계효과 소자와 그 제조방법 |
JPH08227743A (ja) * | 1995-02-20 | 1996-09-03 | Sumitomo Electric Ind Ltd | 酸化物超電導体用金属電極 |
KR100194621B1 (ko) * | 1995-12-21 | 1999-07-01 | 정선종 | 고온초전도 전계효과 소자 및 그 제조방법 |
US6890766B2 (en) * | 1999-03-17 | 2005-05-10 | International Business Machines Corporation | Dual-type thin-film field-effect transistors and applications |
SG95620A1 (en) * | 1999-05-18 | 2003-04-23 | Ibm | Dual-type thin-film field-effect transistors and applications |
EP1210399A1 (de) * | 1999-08-19 | 2002-06-05 | Manufacturing And Technology Conversion International, Inc. | Gasturbine mit einem indirekt erhitztem dampfreformprozess |
CN100431190C (zh) * | 2004-09-01 | 2008-11-05 | 复旦大学 | 一种有机场效应管取向层及其制备方法和应用 |
GB0423343D0 (en) * | 2004-10-21 | 2004-11-24 | Koninkl Philips Electronics Nv | Metal-oxide-semiconductor device |
US7601165B2 (en) * | 2006-09-29 | 2009-10-13 | Biomet Sports Medicine, Llc | Method and apparatus for forming a self-locking adjustable suture loop |
WO2008109564A1 (en) * | 2007-03-02 | 2008-09-12 | The Regents Of The University Of California | Complex oxides useful for thermoelectric energy conversion |
US8204564B2 (en) * | 2007-11-07 | 2012-06-19 | Brookhaven Science Associates, Llc | High temperature interfacial superconductivity |
KR20130129674A (ko) | 2012-05-21 | 2013-11-29 | 삼성디스플레이 주식회사 | 박막 트랜지스터 및 이를 포함하는 박막 트랜지스터 표시판 |
KR102376508B1 (ko) * | 2017-11-16 | 2022-03-18 | 삼성전자주식회사 | 집적회로 장치 및 그 제조 방법 |
Family Cites Families (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH069262B2 (ja) * | 1984-09-21 | 1994-02-02 | 株式会社日立製作所 | 超電導デバイス |
EP0257474A3 (de) * | 1986-08-13 | 1989-02-15 | Hitachi, Ltd. | Supraleitendes Bauelement |
JPS6346786A (ja) * | 1986-08-15 | 1988-02-27 | Hitachi Ltd | 超電導トランジスタ |
KR910002311B1 (ko) * | 1987-02-27 | 1991-04-11 | 가부시기가이샤 히다찌세이사꾸쇼 | 초전도 디바이스 |
JPS64779A (en) * | 1987-03-13 | 1989-01-05 | Toshiba Corp | Superconducting transistor and manufacture thereof |
JPS63239990A (ja) * | 1987-03-27 | 1988-10-05 | Toshiba Corp | 超電導トランジスタ |
DE3885153T2 (de) * | 1987-05-31 | 1994-05-19 | Sumitomo Electric Industries | Methode zur Herstellung einer supraleitenden Dünnschicht. |
JPS63308977A (ja) * | 1987-06-11 | 1988-12-16 | Toshiba Corp | 超電導素子 |
DE3889024T2 (de) * | 1987-07-13 | 1994-10-13 | Sumitomo Electric Industries | Verfahren zum Herstellen einer supraleitenden Dünnschicht. |
JPS6431475A (en) * | 1987-07-28 | 1989-02-01 | Univ Tokyo | Superconducting device and forming method thereof |
NL8701779A (nl) * | 1987-07-28 | 1989-02-16 | Philips Nv | Supergeleidende dunne laag. |
US4980339A (en) * | 1987-07-29 | 1990-12-25 | Matsushita Electric Industrial Co., Ltd. | Superconductor structure |
JPH01101676A (ja) * | 1987-10-15 | 1989-04-19 | Mitsubishi Electric Corp | 超伝導トランジスタ |
US4994435A (en) * | 1987-10-16 | 1991-02-19 | The Furukawa Electric Co., Ltd. | Laminated layers of a substrate, noble metal, and interlayer underneath an oxide superconductor |
GB2213839B (en) * | 1987-12-23 | 1992-06-17 | Plessey Co Plc | Semiconducting thin films |
US5221660A (en) * | 1987-12-25 | 1993-06-22 | Sumitomo Electric Industries, Ltd. | Semiconductor substrate having a superconducting thin film |
DE3876228T2 (de) * | 1988-01-15 | 1993-06-03 | Ibm | Feldeffektanordnung mit supraleitendem kanal. |
DE68922919T3 (de) * | 1988-02-17 | 1999-09-30 | Toshio Hirai | Verfahren zur Herstellung von dünnen Schichten aus Hochtemperatur-Supraleiteroxyd. |
US5084438A (en) * | 1988-03-23 | 1992-01-28 | Nec Corporation | Electronic device substrate using silicon semiconductor substrate |
IT1217585B (it) * | 1988-05-13 | 1990-03-30 | Enichem Spa | Film sottili superconduttori ad elevata densita' di corrente e loro metodo di preparazione |
WO1989011736A1 (en) * | 1988-05-24 | 1989-11-30 | Siemens Aktiengesellschaft | Process for producing thin films of a high-temperature superconductor and films thus produced |
JP2646683B2 (ja) * | 1988-08-02 | 1997-08-27 | 日本電気株式会社 | 電子デバイス用基板 |
JP2862137B2 (ja) * | 1988-08-11 | 1999-02-24 | 古河電気工業株式会社 | 超電導トランジスタ |
JPH0262082A (ja) * | 1988-08-29 | 1990-03-01 | Fujitsu Ltd | 超伝導トランジスタ |
JP3020524B2 (ja) * | 1988-11-28 | 2000-03-15 | 株式会社日立製作所 | 酸化物超電導素子 |
JPH02181482A (ja) * | 1989-01-06 | 1990-07-16 | Sumitomo Electric Ind Ltd | 超電導体層を有する半導体基板 |
US5075283A (en) * | 1989-03-09 | 1991-12-24 | International Superconductor Corp. | High-Tc superconductor quantum interference devices |
US5130294A (en) * | 1990-08-13 | 1992-07-14 | Kookrin Char | High temperature superconductor-calcium titanate structures |
US5132282A (en) * | 1990-03-16 | 1992-07-21 | Nathan Newman | High temperature superconductor-strontium titanate sapphire structures |
US5173474A (en) * | 1990-04-18 | 1992-12-22 | Xerox Corporation | Silicon substrate having an epitaxial superconducting layer thereon and method of making same |
US5128316A (en) * | 1990-06-04 | 1992-07-07 | Eastman Kodak Company | Articles containing a cubic perovskite crystal structure |
DE69117503T2 (de) * | 1991-07-19 | 1996-09-19 | Ibm | Verbesserter supraleitender Feldeffekt-Transistor mit inverser MISFET-Struktur und Verfahren zu dessen Herstellung |
-
1991
- 1991-01-07 SG SG1996000248A patent/SG46182A1/en unknown
- 1991-01-07 DE DE69132972T patent/DE69132972T2/de not_active Expired - Fee Related
- 1991-01-07 EP EP91810006A patent/EP0494580B1/de not_active Expired - Lifetime
- 1991-07-16 US US07/731,821 patent/US5278136A/en not_active Expired - Fee Related
- 1991-10-24 TW TW080108386A patent/TW238399B/zh active
- 1991-12-06 CN CN91111456A patent/CN1099138C/zh not_active Expired - Fee Related
- 1991-12-06 KR KR1019910022272A patent/KR960002292B1/ko not_active IP Right Cessation
- 1991-12-06 MY MYPI91002268A patent/MY109375A/en unknown
- 1991-12-16 JP JP3331796A patent/JPH0834321B2/ja not_active Expired - Fee Related
-
1992
- 1992-01-06 CA CA002058780A patent/CA2058780A1/en not_active Abandoned
-
1993
- 1993-10-20 US US08/139,958 patent/US5382565A/en not_active Expired - Fee Related
- 1993-11-19 US US08/155,042 patent/US5376569A/en not_active Expired - Fee Related
-
2000
- 2000-02-28 CN CNB001036076A patent/CN1138301C/zh not_active Expired - Fee Related
- 2000-07-31 CN CNB001222333A patent/CN1173418C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
TW238399B (de) | 1995-01-11 |
CN1323070A (zh) | 2001-11-21 |
SG46182A1 (en) | 1998-02-20 |
JPH0834321B2 (ja) | 1996-03-29 |
MY109375A (en) | 1997-01-31 |
CA2058780A1 (en) | 1992-07-08 |
KR920015626A (ko) | 1992-08-27 |
CN1099138C (zh) | 2003-01-15 |
KR960002292B1 (ko) | 1996-02-14 |
US5278136A (en) | 1994-01-11 |
DE69132972T2 (de) | 2003-03-13 |
CN1138301C (zh) | 2004-02-11 |
US5382565A (en) | 1995-01-17 |
US5376569A (en) | 1994-12-27 |
EP0494580B1 (de) | 2002-04-03 |
CN1073045A (zh) | 1993-06-09 |
JPH05235426A (ja) | 1993-09-10 |
EP0494580A1 (de) | 1992-07-15 |
CN1269603A (zh) | 2000-10-11 |
CN1173418C (zh) | 2004-10-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8332 | No legal effect for de | ||
8370 | Indication related to discontinuation of the patent is to be deleted | ||
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |