DE69212383D1 - Dünnfilmtransistor und Verfahren zu seiner Herstellung - Google Patents
Dünnfilmtransistor und Verfahren zu seiner HerstellungInfo
- Publication number
- DE69212383D1 DE69212383D1 DE69212383T DE69212383T DE69212383D1 DE 69212383 D1 DE69212383 D1 DE 69212383D1 DE 69212383 T DE69212383 T DE 69212383T DE 69212383 T DE69212383 T DE 69212383T DE 69212383 D1 DE69212383 D1 DE 69212383D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacture
- thin film
- film transistor
- transistor
- thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28079—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a single metal, e.g. Ta, W, Mo, Al
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/90—MOSFET type gate sidewall insulating spacer
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10266891 | 1991-05-08 | ||
JP26967591 | 1991-10-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69212383D1 true DE69212383D1 (de) | 1996-08-29 |
DE69212383T2 DE69212383T2 (de) | 1997-01-16 |
Family
ID=26443350
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69212383T Expired - Lifetime DE69212383T2 (de) | 1991-05-08 | 1992-04-29 | Dünnfilmtransistor und Verfahren zu seiner Herstellung |
Country Status (6)
Country | Link |
---|---|
US (4) | US5583366A (de) |
EP (1) | EP0513590B1 (de) |
JP (4) | JP3277548B2 (de) |
KR (3) | KR100260668B1 (de) |
DE (1) | DE69212383T2 (de) |
SG (1) | SG72617A1 (de) |
Families Citing this family (76)
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US5289030A (en) | 1991-03-06 | 1994-02-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with oxide layer |
JP2794678B2 (ja) | 1991-08-26 | 1998-09-10 | 株式会社 半導体エネルギー研究所 | 絶縁ゲイト型半導体装置およびその作製方法 |
JP3277548B2 (ja) * | 1991-05-08 | 2002-04-22 | セイコーエプソン株式会社 | ディスプレイ基板 |
US6979840B1 (en) | 1991-09-25 | 2005-12-27 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistors having anodized metal film between the gate wiring and drain wiring |
JPH06132303A (ja) * | 1991-11-29 | 1994-05-13 | Semiconductor Energy Lab Co Ltd | 薄膜トランジスタおよびその作製方法 |
US5485019A (en) | 1992-02-05 | 1996-01-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
US6624450B1 (en) * | 1992-03-27 | 2003-09-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
TW223178B (en) * | 1992-03-27 | 1994-05-01 | Semiconductor Energy Res Co Ltd | Semiconductor device and its production method |
JPH06124913A (ja) * | 1992-06-26 | 1994-05-06 | Semiconductor Energy Lab Co Ltd | レーザー処理方法 |
EP0588370A3 (en) * | 1992-09-18 | 1994-06-08 | Matsushita Electric Ind Co Ltd | Manufacturing method of thin film transistor and semiconductor device utilized for liquid crystal display |
US5728592A (en) * | 1992-10-09 | 1998-03-17 | Fujitsu Ltd. | Method for fabricating a thin film transistor matrix device |
JP3318384B2 (ja) * | 1993-02-05 | 2002-08-26 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタ及びその作製方法 |
US6683350B1 (en) | 1993-02-05 | 2004-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and method for manufacturing the same |
US5563427A (en) * | 1993-02-10 | 1996-10-08 | Seiko Epson Corporation | Active matrix panel and manufacturing method including TFTs having variable impurity concentration levels |
JPH06275640A (ja) * | 1993-03-22 | 1994-09-30 | Semiconductor Energy Lab Co Ltd | 薄膜トランジスタおよびその作製方法 |
US5747355A (en) * | 1993-03-30 | 1998-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing a transistor using anodic oxidation |
US6190933B1 (en) * | 1993-06-30 | 2001-02-20 | The United States Of America As Represented By The Secretary Of The Navy | Ultra-high resolution liquid crystal display on silicon-on-sapphire |
US5589406A (en) * | 1993-07-30 | 1996-12-31 | Ag Technology Co., Ltd. | Method of making TFT display |
TW297142B (de) | 1993-09-20 | 1997-02-01 | Handotai Energy Kenkyusho Kk | |
JP2000150907A (ja) * | 1993-09-20 | 2000-05-30 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
US5576231A (en) * | 1993-11-05 | 1996-11-19 | Semiconductor Energy Laboratory Co., Ltd. | Process for fabricating an insulated gate field effect transistor with an anodic oxidized gate electrode |
JP3330736B2 (ja) * | 1994-07-14 | 2002-09-30 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JPH08148430A (ja) * | 1994-11-24 | 1996-06-07 | Sony Corp | 多結晶半導体薄膜の作成方法 |
FR2728390A1 (fr) * | 1994-12-19 | 1996-06-21 | Korea Electronics Telecomm | Procede de formation d'un transistor a film mince |
TW345654B (en) | 1995-02-15 | 1998-11-21 | Handotai Energy Kenkyusho Kk | Active matrix display device |
US7271410B2 (en) * | 1995-03-28 | 2007-09-18 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix circuit |
JPH08264802A (ja) * | 1995-03-28 | 1996-10-11 | Semiconductor Energy Lab Co Ltd | 半導体作製方法、薄膜トランジスタ作製方法および薄膜トランジスタ |
JP3176527B2 (ja) * | 1995-03-30 | 2001-06-18 | シャープ株式会社 | 半導体装置の製造方法 |
JPH09148266A (ja) * | 1995-11-24 | 1997-06-06 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
KR100192593B1 (ko) * | 1996-02-21 | 1999-07-01 | 윤종용 | 폴리 실리콘 박막 트랜지스터의 제조방법 |
EP0801427A3 (de) * | 1996-04-11 | 1999-05-06 | Matsushita Electric Industrial Co., Ltd. | Feldeffekttransistor, Halbleiter-Speicheranordnung, Verfahren zur Herstellung und Verfahren zum Steuern der Halbleiter-Speicheranordnung |
KR100219117B1 (ko) * | 1996-08-24 | 1999-09-01 | 구자홍 | 박막트랜지스터 액정표시장치 및 그 제조방법 |
JP3634089B2 (ja) | 1996-09-04 | 2005-03-30 | 株式会社半導体エネルギー研究所 | 表示装置 |
JP3795606B2 (ja) * | 1996-12-30 | 2006-07-12 | 株式会社半導体エネルギー研究所 | 回路およびそれを用いた液晶表示装置 |
JP3883641B2 (ja) * | 1997-03-27 | 2007-02-21 | 株式会社半導体エネルギー研究所 | コンタクト構造およびアクティブマトリクス型表示装置 |
JP4831850B2 (ja) | 1997-07-08 | 2011-12-07 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタの作製方法 |
KR100386003B1 (ko) * | 1998-12-15 | 2003-10-17 | 엘지.필립스 엘시디 주식회사 | 반사형 액정 표시장치 및 그 제조방법_ |
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JP5415001B2 (ja) * | 2007-02-22 | 2014-02-12 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US7569886B2 (en) * | 2007-03-08 | 2009-08-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacture method thereof |
KR101453829B1 (ko) * | 2007-03-23 | 2014-10-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 및 그 제조 방법 |
JP5512931B2 (ja) * | 2007-03-26 | 2014-06-04 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP5512930B2 (ja) | 2007-03-26 | 2014-06-04 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
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WO2014121469A1 (zh) * | 2013-02-06 | 2014-08-14 | 深圳市柔宇科技有限公司 | 一种薄膜晶体管及其像素单元的制造方法 |
KR102461212B1 (ko) * | 2016-02-17 | 2022-11-01 | 티씨엘 차이나 스타 옵토일렉트로닉스 테크놀로지 컴퍼니 리미티드 | 표시 장치 및 이의 제조 방법 |
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US10276677B2 (en) * | 2016-11-28 | 2019-04-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device structure and method for forming the same |
EP3676876A4 (de) * | 2017-08-31 | 2021-04-07 | BOE Technology Group Co., Ltd. | Dünnfilmtransistor, arraysubstrat, anzeigevorrichtung und verfahren zur herstellung eines dünnfilmtransistors |
US10431689B2 (en) * | 2017-11-07 | 2019-10-01 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Thin film transistor and display device |
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JPH0285826A (ja) * | 1988-09-22 | 1990-03-27 | Hitachi Ltd | 表示パネル |
JPH0290683A (ja) * | 1988-09-28 | 1990-03-30 | Seiko Epson Corp | 薄膜トランジスタ及びその製造方法 |
JP2880175B2 (ja) * | 1988-11-30 | 1999-04-05 | 株式会社日立製作所 | レーザアニール方法及び薄膜半導体装置 |
JP2827277B2 (ja) * | 1989-05-22 | 1998-11-25 | セイコーエプソン株式会社 | 薄膜トランジスタの製造方法 |
JPH02307273A (ja) * | 1989-05-23 | 1990-12-20 | Seiko Epson Corp | 薄膜トランジスタ |
JPH03108319A (ja) * | 1989-09-21 | 1991-05-08 | Seiko Epson Corp | 半導体装置の製造方法 |
JP2999271B2 (ja) * | 1990-12-10 | 2000-01-17 | 株式会社半導体エネルギー研究所 | 表示装置 |
US5521107A (en) * | 1991-02-16 | 1996-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming a field-effect transistor including anodic oxidation of the gate |
US5289030A (en) * | 1991-03-06 | 1994-02-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with oxide layer |
JP3277548B2 (ja) * | 1991-05-08 | 2002-04-22 | セイコーエプソン株式会社 | ディスプレイ基板 |
JP3430422B2 (ja) * | 1992-12-14 | 2003-07-28 | 財団法人石油産業活性化センター | 窒素酸化物接触還元用触媒 |
US5796116A (en) * | 1994-07-27 | 1998-08-18 | Sharp Kabushiki Kaisha | Thin-film semiconductor device including a semiconductor film with high field-effect mobility |
KR0169356B1 (ko) * | 1995-01-06 | 1999-03-20 | 김광호 | 박막트랜지스터 액정 디스플레이 소자 및 그 제조방법 |
JPH09107102A (ja) * | 1995-10-09 | 1997-04-22 | Sharp Corp | 薄膜トランジスタ及びその製造方法 |
-
1992
- 1992-04-27 JP JP10803192A patent/JP3277548B2/ja not_active Expired - Lifetime
- 1992-04-29 EP EP92107317A patent/EP0513590B1/de not_active Expired - Lifetime
- 1992-04-29 SG SG1996002143A patent/SG72617A1/en unknown
- 1992-04-29 DE DE69212383T patent/DE69212383T2/de not_active Expired - Lifetime
- 1992-05-02 KR KR1019920007527A patent/KR100260668B1/ko not_active IP Right Cessation
-
1995
- 1995-01-26 US US08/378,906 patent/US5583366A/en not_active Expired - Lifetime
- 1995-05-09 US US08/439,180 patent/US5561075A/en not_active Expired - Lifetime
-
1996
- 1996-07-10 US US08/678,029 patent/US5814539A/en not_active Expired - Lifetime
-
1997
- 1997-02-06 KR KR1019970003729A patent/KR100260667B1/ko not_active IP Right Cessation
- 1997-02-06 KR KR1019970003728A patent/KR100260666B1/ko not_active IP Right Cessation
-
1998
- 1998-07-07 US US09/111,551 patent/US6136625A/en not_active Expired - Fee Related
- 1998-07-16 JP JP20234098A patent/JP3277892B2/ja not_active Expired - Lifetime
- 1998-07-16 JP JP10202339A patent/JPH1197711A/ja active Pending
- 1998-08-10 JP JP22630098A patent/JP3277895B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP3277548B2 (ja) | 2002-04-22 |
JPH05166837A (ja) | 1993-07-02 |
EP0513590A2 (de) | 1992-11-19 |
JPH1174541A (ja) | 1999-03-16 |
JP3277892B2 (ja) | 2002-04-22 |
DE69212383T2 (de) | 1997-01-16 |
KR100260668B1 (ko) | 2000-07-01 |
EP0513590A3 (en) | 1993-07-21 |
JP3277895B2 (ja) | 2002-04-22 |
JPH1197711A (ja) | 1999-04-09 |
SG72617A1 (en) | 2000-05-23 |
US5561075A (en) | 1996-10-01 |
KR100260667B1 (en) | 2000-07-01 |
US5814539A (en) | 1998-09-29 |
KR920022580A (ko) | 1992-12-19 |
EP0513590B1 (de) | 1996-07-24 |
US5583366A (en) | 1996-12-10 |
JPH11112004A (ja) | 1999-04-23 |
KR100260666B1 (en) | 2000-07-01 |
US6136625A (en) | 2000-10-24 |
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