DE69226220T2 - Transistor mit hoher Elektronenbeweglichkeit und Verfahren zu seiner Herstellung - Google Patents
Transistor mit hoher Elektronenbeweglichkeit und Verfahren zu seiner HerstellungInfo
- Publication number
- DE69226220T2 DE69226220T2 DE69226220T DE69226220T DE69226220T2 DE 69226220 T2 DE69226220 T2 DE 69226220T2 DE 69226220 T DE69226220 T DE 69226220T DE 69226220 T DE69226220 T DE 69226220T DE 69226220 T2 DE69226220 T2 DE 69226220T2
- Authority
- DE
- Germany
- Prior art keywords
- manufacture
- electron mobility
- high electron
- mobility transistor
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0891—Source or drain regions of field-effect devices of field-effect transistors with Schottky gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/697,830 US5140386A (en) | 1991-05-09 | 1991-05-09 | High electron mobility transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69226220D1 DE69226220D1 (de) | 1998-08-20 |
DE69226220T2 true DE69226220T2 (de) | 1999-02-04 |
Family
ID=24802749
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69226220T Expired - Lifetime DE69226220T2 (de) | 1991-05-09 | 1992-05-07 | Transistor mit hoher Elektronenbeweglichkeit und Verfahren zu seiner Herstellung |
Country Status (4)
Country | Link |
---|---|
US (1) | US5140386A (de) |
EP (1) | EP0514079B1 (de) |
JP (1) | JP3602150B2 (de) |
DE (1) | DE69226220T2 (de) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010008288A1 (en) * | 1988-01-08 | 2001-07-19 | Hitachi, Ltd. | Semiconductor integrated circuit device having memory cells |
JP2924239B2 (ja) * | 1991-03-26 | 1999-07-26 | 三菱電機株式会社 | 電界効果トランジスタ |
FR2679071B1 (fr) * | 1991-07-08 | 1997-04-11 | France Telecom | Transistor a effet de champ, a couches minces de bande d'energie controlee. |
US5304825A (en) * | 1992-08-20 | 1994-04-19 | Motorola, Inc. | Linear heterojunction field effect transistor |
US5408111A (en) * | 1993-02-26 | 1995-04-18 | Sumitomo Electric Industries, Ltd. | Field-effect transistor having a double pulse-doped structure |
JP3631506B2 (ja) * | 1994-02-18 | 2005-03-23 | 三菱電機株式会社 | 電界効果トランジスタの製造方法 |
JPH07283237A (ja) * | 1994-04-07 | 1995-10-27 | Toyota Central Res & Dev Lab Inc | 電界効果トランジスタ |
JP2643859B2 (ja) * | 1994-09-29 | 1997-08-20 | 日本電気株式会社 | 化合物半導体電界効果トランジスタ |
US5668387A (en) * | 1995-10-26 | 1997-09-16 | Trw Inc. | Relaxed channel high electron mobility transistor |
JP3604502B2 (ja) * | 1996-04-18 | 2004-12-22 | 本田技研工業株式会社 | 高電子移動度トランジスタ |
JP3077599B2 (ja) * | 1996-09-20 | 2000-08-14 | 日本電気株式会社 | 電界効果トランジスタ |
JP3416532B2 (ja) | 1998-06-15 | 2003-06-16 | 富士通カンタムデバイス株式会社 | 化合物半導体装置及びその製造方法 |
US6242293B1 (en) * | 1998-06-30 | 2001-06-05 | The Whitaker Corporation | Process for fabricating double recess pseudomorphic high electron mobility transistor structures |
US6307221B1 (en) * | 1998-11-18 | 2001-10-23 | The Whitaker Corporation | InxGa1-xP etch stop layer for double recess pseudomorphic high electron mobility transistor structures |
US6271547B1 (en) * | 1999-08-06 | 2001-08-07 | Raytheon Company | Double recessed transistor with resistive layer |
US6797994B1 (en) | 2000-02-14 | 2004-09-28 | Raytheon Company | Double recessed transistor |
US6703638B2 (en) | 2001-05-21 | 2004-03-09 | Tyco Electronics Corporation | Enhancement and depletion-mode phemt device having two ingap etch-stop layers |
JP2003133334A (ja) * | 2001-10-25 | 2003-05-09 | Murata Mfg Co Ltd | ヘテロ接合電界効果トランジスタ |
US6838325B2 (en) * | 2002-10-24 | 2005-01-04 | Raytheon Company | Method of forming a self-aligned, selectively etched, double recess high electron mobility transistor |
US7432142B2 (en) * | 2004-05-20 | 2008-10-07 | Cree, Inc. | Methods of fabricating nitride-based transistors having regrown ohmic contact regions |
US7842972B2 (en) * | 2004-12-01 | 2010-11-30 | Retro Reflective Optics, Llc | Low-temperature-grown (LTG) insulated-gate PHEMT device and method |
US7550785B1 (en) | 2005-12-02 | 2009-06-23 | Skyworks Solutions, Inc. | PHEMT structure having recessed ohmic contact and method for fabricating same |
JP2007227884A (ja) * | 2006-01-30 | 2007-09-06 | Matsushita Electric Ind Co Ltd | 電界効果トランジスタ |
EP2080228B1 (de) | 2006-10-04 | 2020-12-02 | LEONARDO S.p.A. | Leistungsbauelement mit einem pseudomorphen transistor mit hoher elektronenmobilität (phemt) mit einzelspannungsversorgung und herstellungsprozess dafür |
WO2011005444A1 (en) | 2009-06-22 | 2011-01-13 | Raytheon Company | Gallium nitride for liquid crystal electrodes |
US9876082B2 (en) | 2015-04-30 | 2018-01-23 | Macom Technology Solutions Holdings, Inc. | Transistor with hole barrier layer |
US11876128B2 (en) * | 2021-09-13 | 2024-01-16 | Walter Tony WOHLMUTH | Field effect transistor |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5381086A (en) * | 1976-12-27 | 1978-07-18 | Fujitsu Ltd | Gallium aresenide field effect transistor |
JPS5726472A (en) * | 1980-07-24 | 1982-02-12 | Fujitsu Ltd | Semiconductor device |
JPS594085A (ja) * | 1982-06-30 | 1984-01-10 | Fujitsu Ltd | 半導体装置 |
JPS59119768A (ja) * | 1982-12-24 | 1984-07-11 | Fujitsu Ltd | 半導体装置 |
US4600932A (en) * | 1984-10-12 | 1986-07-15 | Gte Laboratories Incorporated | Enhanced mobility buried channel transistor structure |
US4652896A (en) * | 1985-06-27 | 1987-03-24 | The United States Of America As Represented By The Secretary Of The Air Force | Modulation doped GaAs/AlGaAs field effect transistor |
US4916498A (en) * | 1985-09-15 | 1990-04-10 | Trw Inc. | High electron mobility power transistor |
US4821093A (en) * | 1986-08-18 | 1989-04-11 | The United States Of America As Represented By The Secretary Of The Army | Dual channel high electron mobility field effect transistor |
JP2559412B2 (ja) * | 1987-06-22 | 1996-12-04 | 株式会社日立製作所 | 半導体装置 |
JPH0194674A (ja) * | 1987-10-06 | 1989-04-13 | Sanyo Electric Co Ltd | ヘテロ接合電界効果トランジスタ |
JPH0682691B2 (ja) * | 1987-11-12 | 1994-10-19 | 松下電器産業株式会社 | 電界効果型トランジスタ |
JPH01199475A (ja) * | 1988-02-03 | 1989-08-10 | Sanyo Electric Co Ltd | ヘテロ接合電界効果トランジスタ |
JP2630446B2 (ja) * | 1988-10-12 | 1997-07-16 | 富士通株式会社 | 半導体装置及びその製造方法 |
US5008717A (en) * | 1989-03-03 | 1991-04-16 | At&T Bell Laboratories | Semiconductor device including cascaded modulation-doped quantum well heterostructures |
-
1991
- 1991-05-09 US US07/697,830 patent/US5140386A/en not_active Expired - Lifetime
-
1992
- 1992-05-07 EP EP92304094A patent/EP0514079B1/de not_active Expired - Lifetime
- 1992-05-07 DE DE69226220T patent/DE69226220T2/de not_active Expired - Lifetime
- 1992-05-11 JP JP11731892A patent/JP3602150B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69226220D1 (de) | 1998-08-20 |
EP0514079A3 (en) | 1993-07-21 |
JPH05129341A (ja) | 1993-05-25 |
JP3602150B2 (ja) | 2004-12-15 |
EP0514079B1 (de) | 1998-07-15 |
EP0514079A2 (de) | 1992-11-19 |
US5140386A (en) | 1992-08-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69226220T2 (de) | Transistor mit hoher Elektronenbeweglichkeit und Verfahren zu seiner Herstellung | |
DE69212383D1 (de) | Dünnfilmtransistor und Verfahren zu seiner Herstellung | |
DE69332231D1 (de) | Halbleitersubstrat und Verfahren zu seiner Herstellung | |
DE69129746T2 (de) | Modifiziertes Polysilazan und Verfahren zu seiner Herstellung | |
DE69333294D1 (de) | Halbleiteranordnung und Verfahren zu seiner Herstellung | |
DE69331176T2 (de) | Knochenzement und Verfahren zu seiner Herstellung | |
DE69231787T2 (de) | Medizinischer Artikel und Verfahren zu seiner Herstellung | |
DE69225439D1 (de) | Verdichter und Verfahren zu seiner Herstellung | |
DE69216692D1 (de) | Kondensator und Verfahren zu seiner Herstellung | |
DE69118941T2 (de) | Zusammengesetztes Halbleitersubstrat und Verfahren zu seiner Herstellung | |
DE69324630D1 (de) | Dotierungsverfahren, Halbleiterbauelement und Verfahren zu seiner Herstellung | |
DE69218477D1 (de) | Medizinisches Material, Verfahren zu seiner Herstellung und medizinisches Gerät | |
DE59209470D1 (de) | Halbleiterbauelement und Verfahren zu seiner Herstellung | |
DE69209856T2 (de) | Supraleitendes Oxidmaterial und Verfahren zu seiner Herstellung | |
DE69128963D1 (de) | Halbleitervorrichtung und Verfahren zu seiner Herstellung | |
DE69209336D1 (de) | Mikroelektronischer ballistischer Transistor und Verfahren zu seiner Herstellung | |
DE69316187T2 (de) | Matratze und Verfahren zur deren Herstellung | |
DE69314282D1 (de) | Dünnfilmtransistor und Verfahren zur seiner Herstellung | |
DE68923574D1 (de) | Bipolartransistor und Verfahren zu seiner Herstellung. | |
DE69310279D1 (de) | Gleitfilm und Verfahren zu seiner Herstellung | |
DE69128829T2 (de) | Feldeffekttransistor und Verfahren zur Herstellung | |
DE69131093D1 (de) | Bipolartransistor und Verfahren zu dessen Herstellung | |
DE69705990T2 (de) | Transistor mit hoher Elektronenbeweglichkeit und Verfahren zur Herstellung | |
DE69300932T2 (de) | Supraleitender Film und Verfahren zu seiner Herstellung. | |
DE69103692D1 (de) | Supraleitfähiges Oxyd und Verfahren zu seiner Herstellung. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
R071 | Expiry of right |
Ref document number: 514079 Country of ref document: EP |