DE69129746T2 - Modifiziertes Polysilazan und Verfahren zu seiner Herstellung - Google Patents

Modifiziertes Polysilazan und Verfahren zu seiner Herstellung

Info

Publication number
DE69129746T2
DE69129746T2 DE69129746T DE69129746T DE69129746T2 DE 69129746 T2 DE69129746 T2 DE 69129746T2 DE 69129746 T DE69129746 T DE 69129746T DE 69129746 T DE69129746 T DE 69129746T DE 69129746 T2 DE69129746 T2 DE 69129746T2
Authority
DE
Germany
Prior art keywords
manufacture
modified polysilazane
polysilazane
modified
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69129746T
Other languages
English (en)
Other versions
DE69129746D1 (de
Inventor
Yasuo Shimizu
Yuuji Tashiro
Hiroyuki Aoki
Masaaki Ichiyama
Hayato Nishii
Toshihide Kishi
Kouji Okuda
Takeshi Isoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EMD Performance Materials Corp
Original Assignee
Tonen Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tonen Corp filed Critical Tonen Corp
Application granted granted Critical
Publication of DE69129746D1 publication Critical patent/DE69129746D1/de
Publication of DE69129746T2 publication Critical patent/DE69129746T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/60—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which all the silicon atoms are connected by linkages other than oxygen atoms
    • C08G77/62—Nitrogen atoms
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
    • C04B35/589—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride obtained from Si-containing polymer precursors or organosilicon monomers
DE69129746T 1991-12-04 1991-12-30 Modifiziertes Polysilazan und Verfahren zu seiner Herstellung Expired - Lifetime DE69129746T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32016791A JP3283276B2 (ja) 1991-12-04 1991-12-04 改質ポリシラザン及びその製造方法

Publications (2)

Publication Number Publication Date
DE69129746D1 DE69129746D1 (de) 1998-08-13
DE69129746T2 true DE69129746T2 (de) 1999-03-04

Family

ID=18118451

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69129746T Expired - Lifetime DE69129746T2 (de) 1991-12-04 1991-12-30 Modifiziertes Polysilazan und Verfahren zu seiner Herstellung

Country Status (4)

Country Link
US (1) US5494978A (de)
EP (1) EP0544959B1 (de)
JP (1) JP3283276B2 (de)
DE (1) DE69129746T2 (de)

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US5612414A (en) * 1993-11-05 1997-03-18 Lanxide Technology Company, Lp Organic/inorganic polymers
US5616650A (en) * 1993-11-05 1997-04-01 Lanxide Technology Company, Lp Metal-nitrogen polymer compositions comprising organic electrophiles
US5747623A (en) * 1994-10-14 1998-05-05 Tonen Corporation Method and composition for forming ceramics and article coated with the ceramics
JPH09157544A (ja) * 1995-12-05 1997-06-17 Tonen Corp シリカ系被膜付き基材の製造方法及び本方法で製造されたシリカ系被膜付き基材
JPH09183663A (ja) * 1995-10-30 1997-07-15 Tonen Corp プラスチックフィルムにＳｉＯ２系セラミックスを被覆する方法
DE69703770T2 (de) * 1996-08-14 2001-07-12 Tokyo Ohka Kogyo Co Ltd Besichtigungslösung auf Polysilazan-Basis für die Isolierung mit einer Zwischenschicht
KR100362834B1 (ko) 2000-05-02 2002-11-29 삼성전자 주식회사 반도체 장치의 산화막 형성 방법 및 이에 의하여 제조된 반도체 장치
US7053005B2 (en) * 2000-05-02 2006-05-30 Samsung Electronics Co., Ltd. Method of forming a silicon oxide layer in a semiconductor manufacturing process
ATE354818T1 (de) 2000-08-31 2007-03-15 Az Electronic Materials Usa Strahlungsempfindliche polysilazan- zusammensetzung, daraus erzeugte muster sowie ein verfahren zur veraschung eines entsprechenden beschichtungsfilms
US6479405B2 (en) * 2000-10-12 2002-11-12 Samsung Electronics Co., Ltd. Method of forming silicon oxide layer in semiconductor manufacturing process using spin-on glass composition and isolation method using the same method
KR100364026B1 (ko) * 2001-02-22 2002-12-11 삼성전자 주식회사 층간 절연막 형성방법
JP3479648B2 (ja) * 2001-12-27 2003-12-15 クラリアント インターナショナル リミテッド ポリシラザン処理溶剤およびこの溶剤を用いるポリシラザンの処理方法
DE10232993A1 (de) * 2002-07-19 2004-02-05 Wacker Polymer Systems Gmbh & Co. Kg Silicon-haltige Polymerisate von ehtylenisch ungesättigten Monomeren
KR100499171B1 (ko) * 2003-07-21 2005-07-01 삼성전자주식회사 스핀온글래스에 의한 산화실리콘막의 형성방법
US7192891B2 (en) * 2003-08-01 2007-03-20 Samsung Electronics, Co., Ltd. Method for forming a silicon oxide layer using spin-on glass
JP4578993B2 (ja) * 2005-02-02 2010-11-10 Ａｚエレクトロニックマテリアルズ株式会社 ポリシラザン処理溶剤およびこの溶剤を用いるポリシラザンの処理方法
US20070270625A1 (en) * 2006-05-18 2007-11-22 Joshua Gurman Treatment of Polysilazane Waste
JP4965953B2 (ja) * 2006-09-29 2012-07-04 株式会社東芝 ポリシラザンまたはポリシラザン溶液の取り扱い方法、ポリシラザン溶液、半導体装置の製造方法
JP5160189B2 (ja) 2007-10-26 2013-03-13 ＡｚエレクトロニックマテリアルズＩｐ株式会社 緻密なシリカ質膜を得ることができるポリシラザン化合物含有組成物
DE102009013410A1 (de) * 2009-03-16 2010-09-23 Clariant International Ltd. Hybridpolymere aus Cyanaten und Silazanen, Verfahren zur ihrer Herstellung sowie deren Verwendung
TWI461292B (zh) 2009-03-17 2014-11-21 Lintec Corp A molded body, a manufacturing method thereof, an electronic device member, and an electronic device
JP5697230B2 (ja) 2010-03-31 2015-04-08 リンテック株式会社 成形体、その製造方法、電子デバイス用部材及び電子デバイス
CN102811853B (zh) 2010-03-31 2015-05-20 琳得科株式会社 透明导电性膜及其制造方法以及使用透明导电性膜的电子器件
WO2012023389A1 (ja) 2010-08-20 2012-02-23 リンテック株式会社 成形体、その製造方法、電子デバイス用部材及び電子デバイス
JP5422055B2 (ja) 2010-09-07 2014-02-19 リンテック株式会社 粘着シート、及び電子デバイス
KR101056838B1 (ko) * 2010-10-15 2011-08-12 테크노세미켐 주식회사 폴리실라잔 용액 및 이의 제조방법
KR101243339B1 (ko) * 2010-12-14 2013-03-13 솔브레인 주식회사 폴리실라잔 용액의 제조방법 및 이를 이용하여 제조된 폴리실라잔 용액
TWI552883B (zh) 2011-07-25 2016-10-11 Lintec Corp Gas barrier film laminates and electronic components
WO2013065812A1 (ja) 2011-11-04 2013-05-10 リンテック株式会社 ガスバリアフィルム及びその製造方法、ガスバリアフィルム積層体、電子デバイス用部材、並びに電子デバイス
EP2786808A4 (de) 2011-11-30 2016-05-25 Lintec Corp Herstellungsverfahren für eine gassperrfolie und elektronisches bauteil oder optische komponente mit dem gassperrfilm
US20150030829A1 (en) 2012-03-06 2015-01-29 Lintec Corporation Gas barrier film laminate, adhesive film, and electronic component
JP6304712B2 (ja) 2012-03-22 2018-04-04 リンテック株式会社 透明導電性積層体及び電子デバイス又はモジュール
CN104220254B (zh) 2012-03-30 2016-05-04 琳得科株式会社 阻气膜层叠体、电子装置用构件、及电子装置
JP6353828B2 (ja) 2013-03-29 2018-07-04 リンテック株式会社 ガスバリア性積層体、電子デバイス用部材及び電子デバイス
EP2982506B1 (de) 2013-03-29 2022-05-11 LINTEC Corporation Laminat, verfahren zur herstellung davon, teil für elektronische vorrichtung und elektronische vorrichtung
TW201533098A (zh) * 2013-12-25 2015-09-01 Toagosei Co Ltd 聚烷氧基矽氮烷及其製造方法，及，塗佈組成物及由其所得之矽系陶瓷被膜
CN106457755A (zh) 2014-03-31 2017-02-22 琳得科株式会社 长尺寸的阻气性层合体及其制造方法
TWI691412B (zh) 2014-06-04 2020-04-21 日商琳得科股份有限公司 氣阻性層積體及其製造方法、電子裝置用元件以及電子裝置
WO2017159787A1 (ja) 2016-03-18 2017-09-21 リンテック株式会社 プライマー層形成用硬化性組成物、ガスバリア性積層フィルムおよびガスバリア性積層体
EP3437855B1 (de) 2016-03-29 2022-07-20 LINTEC Corporation Gassperrfilmlaminatkörper, element für eine elektronische vorrichtung und elektronische vorrichtung
JP2017200861A (ja) 2016-05-02 2017-11-09 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ 緻密なシリカ質膜形成用組成物
WO2018181004A1 (ja) 2017-03-28 2018-10-04 リンテック株式会社 ガスバリア性積層体
KR102194975B1 (ko) * 2017-10-13 2020-12-24 삼성에스디아이 주식회사 실리카 막 형성용 조성물, 실리카 막의 제조방법 및 실리카 막
CN111212732A (zh) 2017-10-20 2020-05-29 琳得科株式会社 阻气膜用基材、阻气膜、电子器件用部件和电子器件
WO2020138206A1 (ja) 2018-12-27 2020-07-02 リンテック株式会社 ガスバリア性積層体

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JPS60145903A (ja) * 1983-12-29 1985-08-01 Toa Nenryo Kogyo Kk 無機ポリシラザン及びその合成方法
FR2616436B1 (fr) * 1987-06-10 1989-12-29 Europ Propulsion Copolymeres a liaisons si-n et si-si, polycarbosilazanes obtenus par pyrolyse desdits copolymeres et utilisation desdits polycarbosilazanes pour la preparation de carbonitrure de silicium
JP2544928B2 (ja) * 1987-06-12 1996-10-16 チッソ株式会社 新規ポリシラザン及びその製造方法
US4861569A (en) * 1987-08-13 1989-08-29 Petroleum Energy Center Reformed, inorganic polysilazane and method of producing same
US4975512A (en) * 1987-08-13 1990-12-04 Petroleum Energy Center Reformed polysilazane and method of producing same
DE3743825A1 (de) * 1987-12-23 1989-07-06 Hoechst Ag Polymere hydridosilazane, verfahren zu ihrer herstellung, aus ihnen herstellbare, siliziumnitrid enthaltende keramische materialien, sowie deren herstellung
US5032551A (en) * 1988-03-05 1991-07-16 Toa Nenryo Kogyo Kabushiki Kaisha Silicon nitride based ceramic fibers, process of preparing same and composite material containing same
US4929704A (en) * 1988-12-20 1990-05-29 Hercules Incorporated Isocyanate- and isothiocyanate-modified polysilazane ceramic precursors
US4975712A (en) * 1989-01-23 1990-12-04 Trw Inc. Two-dimensional scanning antenna
US5032649A (en) * 1989-11-27 1991-07-16 Hercules Incorporated Organic amide-modified polysilazane ceramic precursors
US5086126A (en) * 1990-12-24 1992-02-04 Dow Corning Corporation Method for producing functional silazane polymers

Also Published As

Publication number Publication date
JPH05345826A (ja) 1993-12-27
EP0544959A1 (de) 1993-06-09
EP0544959B1 (de) 1998-07-08
US5494978A (en) 1996-02-27
JP3283276B2 (ja) 2002-05-20
DE69129746D1 (de) 1998-08-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: TONENGENERAL SEKIYU K.K., TOKIO/TOKYO, JP

8327 Change in the person/name/address of the patent owner

Owner name: CLARIANT INTERNATIONAL LIMITED, MUTTENZ, CH

8327 Change in the person/name/address of the patent owner

Owner name: AZ ELECTRONIC MATERIALS USA CORP., SOMERVILLE, N.J

8328 Change in the person/name/address of the agent

Representative=s name: PATENTANWAELTE ISENBRUCK BOESL HOERSCHLER WICHMANN HU