DE69705990T2 - Transistor mit hoher Elektronenbeweglichkeit und Verfahren zur Herstellung - Google Patents

Transistor mit hoher Elektronenbeweglichkeit und Verfahren zur Herstellung

Info

Publication number
DE69705990T2
DE69705990T2 DE1997605990 DE69705990T DE69705990T2 DE 69705990 T2 DE69705990 T2 DE 69705990T2 DE 1997605990 DE1997605990 DE 1997605990 DE 69705990 T DE69705990 T DE 69705990T DE 69705990 T2 DE69705990 T2 DE 69705990T2
Authority
DE
Germany
Prior art keywords
manufacturing
electron mobility
high electron
mobility transistor
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE1997605990
Other languages
English (en)
Other versions
DE69705990D1 (de
Inventor
Tomoyuki Kamiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honda Motor Co Ltd
Original Assignee
Honda Motor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honda Motor Co Ltd filed Critical Honda Motor Co Ltd
Publication of DE69705990D1 publication Critical patent/DE69705990D1/de
Application granted granted Critical
Publication of DE69705990T2 publication Critical patent/DE69705990T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
DE1997605990 1996-05-02 1997-04-28 Transistor mit hoher Elektronenbeweglichkeit und Verfahren zur Herstellung Expired - Fee Related DE69705990T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13590296A JPH09298295A (ja) 1996-05-02 1996-05-02 高電子移動度トランジスタ及びその製造方法

Publications (2)

Publication Number Publication Date
DE69705990D1 DE69705990D1 (de) 2001-09-13
DE69705990T2 true DE69705990T2 (de) 2001-11-22

Family

ID=15162502

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1997605990 Expired - Fee Related DE69705990T2 (de) 1996-05-02 1997-04-28 Transistor mit hoher Elektronenbeweglichkeit und Verfahren zur Herstellung

Country Status (3)

Country Link
EP (1) EP0805498B1 (de)
JP (1) JPH09298295A (de)
DE (1) DE69705990T2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4822667B2 (ja) * 2004-01-23 2011-11-24 Ｏｋｉセミコンダクタ株式会社 半導体素子及びその製造方法
KR100782941B1 (ko) * 2006-12-29 2007-12-07 한국과학기술연구원 Ω 형상의 채널을 갖는 고이동도 트랜지스터

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1184723B (it) * 1985-01-28 1987-10-28 Telettra Lab Telefon Transistore mesfet con strato d'aria tra le connessioni dell'elettrodo di gate al supporto e relativo procedimento difabbricazione
EP0469768A1 (de) * 1990-07-31 1992-02-05 AT&T Corp. Ein im wesentlichen linearer Feldeffekttransistor und dessen Herstellungsverfahren
JPH04115555A (ja) * 1990-09-05 1992-04-16 Mitsubishi Electric Corp 半導体装置及びその製造方法
JPH04365333A (ja) * 1991-06-13 1992-12-17 Matsushita Electric Ind Co Ltd ヘテロ接合電界効果トランジスタ及びその製造方法
FR2679071B1 (fr) * 1991-07-08 1997-04-11 France Telecom Transistor a effet de champ, a couches minces de bande d'energie controlee.

Also Published As

Publication number Publication date
EP0805498B1 (de) 2001-08-08
DE69705990D1 (de) 2001-09-13
JPH09298295A (ja) 1997-11-18
EP0805498A1 (de) 1997-11-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee