DE69327559D1 - Dünnfilm aus polysilizium und verfahren zu seiner herstellung - Google Patents

Dünnfilm aus polysilizium und verfahren zu seiner herstellung

Info

Publication number
DE69327559D1
DE69327559D1 DE69327559T DE69327559T DE69327559D1 DE 69327559 D1 DE69327559 D1 DE 69327559D1 DE 69327559 T DE69327559 T DE 69327559T DE 69327559 T DE69327559 T DE 69327559T DE 69327559 D1 DE69327559 D1 DE 69327559D1
Authority
DE
Germany
Prior art keywords
polysilizium
production
thin film
film made
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69327559T
Other languages
English (en)
Other versions
DE69327559T2 (de
Inventor
Kenji Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kanegafuchi Chemical Industry Co Ltd
Original Assignee
Kanegafuchi Chemical Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP10056792A external-priority patent/JPH05271951A/ja
Priority claimed from JP10056692A external-priority patent/JP3205037B2/ja
Priority claimed from JP10189892A external-priority patent/JP3209789B2/ja
Priority claimed from JP04109259A external-priority patent/JP3078101B2/ja
Application filed by Kanegafuchi Chemical Industry Co Ltd filed Critical Kanegafuchi Chemical Industry Co Ltd
Application granted granted Critical
Publication of DE69327559D1 publication Critical patent/DE69327559D1/de
Publication of DE69327559T2 publication Critical patent/DE69327559T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/28—Other inorganic materials
    • C03C2217/282—Carbides, silicides
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/15—Deposition methods from the vapour phase
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/17—Deposition methods from a solid phase
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/903—Dendrite or web or cage technique
    • Y10S117/904—Laser beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/093—Laser beam treatment in general
DE69327559T 1992-03-25 1993-03-23 Dünnfilm aus polysilizium und verfahren zu seiner herstellung Expired - Fee Related DE69327559T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP10056792A JPH05271951A (ja) 1992-03-25 1992-03-25 大面積ラジカルソース
JP10056692A JP3205037B2 (ja) 1992-03-25 1992-03-25 ポリシリコン薄膜形成用基板およびその製法
JP10189892A JP3209789B2 (ja) 1992-03-28 1992-03-28 ポリシリコン薄膜堆積物およびその製法
JP04109259A JP3078101B2 (ja) 1992-04-01 1992-04-01 大面積ポリシリコン薄膜およびその低温形成法
PCT/JP1993/000338 WO1993019022A1 (fr) 1992-03-25 1993-03-23 Couche mince de polysilicium et sa fabrication

Publications (2)

Publication Number Publication Date
DE69327559D1 true DE69327559D1 (de) 2000-02-17
DE69327559T2 DE69327559T2 (de) 2000-07-06

Family

ID=27468843

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69327559T Expired - Fee Related DE69327559T2 (de) 1992-03-25 1993-03-23 Dünnfilm aus polysilizium und verfahren zu seiner herstellung

Country Status (4)

Country Link
US (2) US5517037A (de)
EP (1) EP0589049B1 (de)
DE (1) DE69327559T2 (de)
WO (1) WO1993019022A1 (de)

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JP3358328B2 (ja) * 1994-10-27 2002-12-16 ソニー株式会社 高融点金属膜の成膜方法
JP2762968B2 (ja) * 1995-09-28 1998-06-11 日本電気株式会社 電界効果型薄膜トランジスタの製造方法
US5972782A (en) * 1995-10-10 1999-10-26 Ostapenko; Serguei Ultrasound treatment of polycrystalline silicon thin films to enhance hydrogenation
CN1529350A (zh) * 1996-05-15 2004-09-15 精工爱普生株式会社 薄膜场效应晶体管的制造方法
CN100485904C (zh) 1996-09-19 2009-05-06 精工爱普生株式会社 矩阵式显示元件及其制造方法
JP3899566B2 (ja) 1996-11-25 2007-03-28 セイコーエプソン株式会社 有機ｅｌ表示装置の製造方法
US6413789B2 (en) * 2000-01-24 2002-07-02 University Of South Florida Method of detecting and monitoring stresses in a semiconductor wafer
WO2002041363A2 (en) * 2000-11-16 2002-05-23 Solarflex Technologies, Inc. System and methods for laser assisted deposition
US6861339B2 (en) * 2002-10-21 2005-03-01 Taiwan Semiconductor Manufacturing Co., Ltd Method for fabricating laminated silicon gate electrode
KR100624427B1 (ko) * 2004-07-08 2006-09-19 삼성전자주식회사 다결정 실리콘 제조방법 및 이를 이용하는 반도체 소자의제조방법
EP1918967B1 (de) * 2006-11-02 2013-12-25 Dow Corning Corporation Verfahren zur Herstellung einer Schicht durch Abscheidung aus einem Plasma
US8203071B2 (en) 2007-01-18 2012-06-19 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
US20090130827A1 (en) * 2007-11-02 2009-05-21 Soo Young Choi Intrinsic amorphous silicon layer
JP2011503848A (ja) 2007-11-02 2011-01-27 アプライド マテリアルズ インコーポレイテッド 堆積プロセス間のプラズマ処置
US7989325B2 (en) * 2009-01-13 2011-08-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing crystalline semiconductor film and method for manufacturing thin film transistor
KR101041141B1 (ko) * 2009-03-03 2011-06-13 삼성모바일디스플레이주식회사 유기전계발광표시장치 및 그의 제조방법
KR101015849B1 (ko) * 2009-03-03 2011-02-23 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법 및 이를 포함하는 유기전계발광표시장치
KR101049799B1 (ko) * 2009-03-03 2011-07-15 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법 및 이를 포함하는 유기전계발광표시장치
KR20100100187A (ko) * 2009-03-05 2010-09-15 삼성모바일디스플레이주식회사 다결정 실리콘층의 제조방법
KR101049801B1 (ko) 2009-03-05 2011-07-15 삼성모바일디스플레이주식회사 다결정 실리콘층의 제조방법 및 이에 이용되는 원자층 증착장치
KR101056428B1 (ko) * 2009-03-27 2011-08-11 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 포함하는 유기전계발광표시장치
DE102009050680B4 (de) 2009-10-26 2019-02-07 Coherent Gmbh Verfahren und Vorrichtung zum Kristallisieren einer amorphen Halbleiterschicht mit einem Laserstrahl
KR101094295B1 (ko) * 2009-11-13 2011-12-19 삼성모바일디스플레이주식회사 다결정 실리콘층의 제조방법, 박막트랜지스터의 제조방법, 및 유기전계발광표시장치의 제조방법
KR102365963B1 (ko) * 2015-06-23 2022-02-23 삼성디스플레이 주식회사 박막 트랜지스터, 이의 제조 방법 및 이를 갖는 액정 표시 장치

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FR2394173A1 (fr) * 1977-06-06 1979-01-05 Thomson Csf Procede de fabrication de dispositifs electroniques qui comportent une couche mince de silicium amorphe et dispositif electronique obtenu par un tel procede
JPS588128B2 (ja) * 1979-08-05 1983-02-14 山崎 舜平 半導体装置作製方法
JPS5643734A (en) * 1979-09-18 1981-04-22 Seiko Epson Corp Anneal method of polycrystalline silicon thin film
JPS5835916A (ja) * 1981-08-28 1983-03-02 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPS5893243A (ja) * 1981-11-30 1983-06-02 Toshiba Corp ポリシリコン薄膜半導体の改善方法
DE3300400A1 (de) * 1982-01-06 1983-07-14 Canon K.K., Tokyo Halbleiterbauelement
JPS5954218A (ja) * 1982-09-21 1984-03-29 Nec Corp 半導体基板の製造方法
JPH0773094B2 (ja) * 1985-08-01 1995-08-02 ソニー株式会社 結晶性半導体薄膜の製造方法
US4789883A (en) * 1985-12-17 1988-12-06 Advanced Micro Devices, Inc. Integrated circuit structure having gate electrode and underlying oxide and method of making same
JPS62292695A (ja) * 1986-06-12 1987-12-19 Ricoh Co Ltd ポリシリコン薄膜の溶融再結晶化方法
JPS6355929A (ja) * 1986-08-26 1988-03-10 Sumitomo Electric Ind Ltd 半導体薄膜の製造方法
US4947219A (en) * 1987-01-06 1990-08-07 Chronar Corp. Particulate semiconductor devices and methods
JPH0682643B2 (ja) * 1987-03-13 1994-10-19 科学技術庁長官官房会計課長 表面処理方法
JPS6435960A (en) * 1987-07-30 1989-02-07 Ricoh Kk Thin film transistor
US5164338A (en) * 1988-04-28 1992-11-17 U.S. Philips Corporation Method of manufacturing a polycrystalline semiconductor resistance layer of silicon on a silicon body and silicon pressure sensor having such a resistance layer
JPH02192771A (ja) * 1989-01-21 1990-07-30 Canon Inc 光起電力素子
US5200630A (en) * 1989-04-13 1993-04-06 Sanyo Electric Co., Ltd. Semiconductor device
JP3186077B2 (ja) * 1991-03-08 2001-07-11 日本電気株式会社 多結晶シリコン膜の形成方法
US5424230A (en) * 1992-02-19 1995-06-13 Casio Computer Co., Ltd. Method of manufacturing a polysilicon thin film transistor
JPH06252170A (ja) * 1993-02-23 1994-09-09 Toshiba Corp 薄膜トランジスタの製造方法
JPH06333823A (ja) * 1993-05-24 1994-12-02 Fuji Xerox Co Ltd 多結晶シリコン膜の製造方法、薄膜トランジスタの製造方法及びリモートプラズマ装置
US5354698A (en) * 1993-07-19 1994-10-11 Micron Technology, Inc. Hydrogen reduction method for removing contaminants in a semiconductor ion implantation process

Also Published As

Publication number Publication date
EP0589049B1 (de) 2000-01-12
DE69327559T2 (de) 2000-07-06
US5739043A (en) 1998-04-14
EP0589049A4 (en) 1997-08-20
US5517037A (en) 1996-05-14
WO1993019022A1 (fr) 1993-09-30
EP0589049A1 (de) 1994-03-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee