DE69401826D1 - Dünnschichtkondensator und Verfahren zu seiner Herstellung - Google Patents

Dünnschichtkondensator und Verfahren zu seiner Herstellung

Info

Publication number
DE69401826D1
DE69401826D1 DE69401826T DE69401826T DE69401826D1 DE 69401826 D1 DE69401826 D1 DE 69401826D1 DE 69401826 T DE69401826 T DE 69401826T DE 69401826 T DE69401826 T DE 69401826T DE 69401826 D1 DE69401826 D1 DE 69401826D1
Authority
DE
Germany
Prior art keywords
manufacture
thin film
film capacitor
capacitor
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69401826T
Other languages
English (en)
Other versions
DE69401826T2 (de
Inventor
Atsushi Tomozawa
Eiji Fujii
Hideo Torii
Masumi Hattori
Satoru Fujii
Ryoichi Takayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP25268393A external-priority patent/JPH07106198A/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE69401826D1 publication Critical patent/DE69401826D1/de
Publication of DE69401826T2 publication Critical patent/DE69401826T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/30—Stacked capacitors
    • H01G4/306—Stacked capacitors made by thin film techniques
DE69401826T 1993-03-25 1994-03-19 Dünnschichtkondensator und Verfahren zu seiner Herstellung Expired - Lifetime DE69401826T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP6631693 1993-03-25
JP25268393A JPH07106198A (ja) 1993-10-08 1993-10-08 積層薄膜コンデンサの製造方法

Publications (2)

Publication Number Publication Date
DE69401826D1 true DE69401826D1 (de) 1997-04-10
DE69401826T2 DE69401826T2 (de) 1997-06-12

Family

ID=26407515

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69401826T Expired - Lifetime DE69401826T2 (de) 1993-03-25 1994-03-19 Dünnschichtkondensator und Verfahren zu seiner Herstellung

Country Status (3)

Country Link
US (2) US5459635A (de)
EP (1) EP0617440B1 (de)
DE (1) DE69401826T2 (de)

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US5600533A (en) * 1994-06-23 1997-02-04 Murata Manufacturing Co., Ltd. Multilayer ceramic capacitor having an anti-reducing agent
JP3470830B2 (ja) * 1994-09-26 2003-11-25 株式会社村田製作所 積層コンデンサの製造方法
US5879812A (en) * 1995-06-06 1999-03-09 Murata Manufacturing Co., Ltd. Monolithic ceramic capacitor and method of producing the same
AUPN363595A0 (en) * 1995-06-19 1995-07-13 Intag International Limited Fabrication of capacitors
JP3094868B2 (ja) * 1995-09-07 2000-10-03 三菱マテリアル株式会社 高純度誘電体薄膜の作製方法
JPH09298289A (ja) * 1996-04-30 1997-11-18 Fujitsu Ltd 酸化物誘電体積層構造の製造方法及び電子回路装置
UA41477C2 (uk) * 1996-05-21 2001-09-17 Сіменс Акцієнгезельшафт Багатошаровий конденсатор тонкошарової конструкції і спосіб його виготовлення
US5912044A (en) * 1997-01-10 1999-06-15 International Business Machines Corporation Method for forming thin film capacitors
DE19737323A1 (de) * 1997-08-28 1999-03-11 Philips Patentverwaltung Dünnschichtkondensator mit Schichtelektrode
JP3092659B2 (ja) * 1997-12-10 2000-09-25 日本電気株式会社 薄膜キャパシタ及びその製造方法
JP3349092B2 (ja) * 1998-06-15 2002-11-20 松下電器産業株式会社 コンデンサの製造方法
US6943392B2 (en) * 1999-08-30 2005-09-13 Micron Technology, Inc. Capacitors having a capacitor dielectric layer comprising a metal oxide having multiple different metals bonded with oxygen
US6444478B1 (en) 1999-08-31 2002-09-03 Micron Technology, Inc. Dielectric films and methods of forming same
US6368514B1 (en) 1999-09-01 2002-04-09 Luminous Intent, Inc. Method and apparatus for batch processed capacitors using masking techniques
US6335049B1 (en) * 2000-01-03 2002-01-01 Micron Technology, Inc. Chemical vapor deposition methods of forming a high K dielectric layer and methods of forming a capacitor
US6558517B2 (en) * 2000-05-26 2003-05-06 Micron Technology, Inc. Physical vapor deposition methods
US6566147B2 (en) 2001-02-02 2003-05-20 Micron Technology, Inc. Method for controlling deposition of dielectric films
US6838122B2 (en) * 2001-07-13 2005-01-04 Micron Technology, Inc. Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers
US20030017266A1 (en) * 2001-07-13 2003-01-23 Cem Basceri Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers, including such layers having a varied concentration of barium and strontium within the layer
US7011978B2 (en) 2001-08-17 2006-03-14 Micron Technology, Inc. Methods of forming capacitor constructions comprising perovskite-type dielectric materials with different amount of crystallinity regions
TW200302296A (en) * 2001-11-12 2003-08-01 Toho Titanium Co Ltd Composite titanium oxide film and method for formation thereof and titanium electrolytic capacitor
KR100480500B1 (ko) * 2002-04-25 2005-04-06 학교법인 포항공과대학교 절연막의 저온 증착법
WO2004073971A1 (en) * 2003-02-20 2004-09-02 N.V. Bekaert S.A. A method of manufacturing a laminated structure
US6716692B1 (en) * 2003-05-20 2004-04-06 Via Technologies, Inc. Fabrication process and structure of laminated capacitor
US20060157792A1 (en) * 2005-01-19 2006-07-20 Kyocera Corporation Laminated thin film capacitor and semiconductor apparatus
KR101274953B1 (ko) * 2008-02-05 2013-06-13 가부시키가이샤 무라타 세이사쿠쇼 유전체 세라믹 및 적층 세라믹 콘덴서
KR101133327B1 (ko) * 2010-04-09 2012-04-05 삼성전기주식회사 적층 세라믹 커패시터의 제조방법
KR20140020473A (ko) * 2012-08-08 2014-02-19 삼성전기주식회사 적층 세라믹 전자부품 및 이의 제조방법
KR101537717B1 (ko) * 2013-09-17 2015-07-20 신유선 임베디드용 적층 세라믹 캐패시터 및 임베디드용 적층 세라믹 캐패시터의 제조 방법
US10109424B2 (en) * 2014-04-22 2018-10-23 Industry-Academic Cooperation Foundation Yonsei University Multilayer ceramic capacitor using poling process for reduction of vibration
US10847859B2 (en) * 2017-02-23 2020-11-24 Intel Corporation Single wire communication arrangement
US10608311B2 (en) 2017-02-23 2020-03-31 Intel Corporation Cable assembly comprising a single wire coupled to a signal launcher and housed in a first cover portion and in a second ferrite cover portion

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US3686591A (en) * 1970-07-24 1972-08-22 Us Army Anisotropic crystal circuit
US3740624A (en) * 1972-06-21 1973-06-19 Sprague Electric Co Monolithic capacitor having corner internal electrode terminations
US4017885A (en) * 1973-10-25 1977-04-12 Texas Instruments Incorporated Large value capacitor
US4297773A (en) * 1978-11-16 1981-11-03 Avx Corporation Method of manufacturing a monolithic ceramic capacitor
US4531268A (en) * 1981-02-27 1985-07-30 Illinois Tool Works Inc. Method of making capacitive structures
DE3472420D1 (en) * 1983-11-29 1988-08-04 Sony Corp Methods of manufacturing dielectric metal titanates
US4661884A (en) * 1986-03-10 1987-04-28 American Technical Ceramics Corp. Miniature, multiple layer, side mounting high frequency blocking capacitor
US5350606A (en) * 1989-03-30 1994-09-27 Kanegafuchi Chemical Industry Co., Ltd. Single crystal ferroelectric barium titanate films
JPH0334506A (ja) * 1989-06-30 1991-02-14 Matsushita Electric Ind Co Ltd コンデンサ
JPH03200308A (ja) * 1989-12-27 1991-09-02 Taiyo Yuden Co Ltd 積層薄膜誘電体素子およびその製法
JPH03284813A (ja) * 1990-03-14 1991-12-16 Fujikin Sofuto Kk コンデンサ
KR920006856B1 (ko) * 1990-04-07 1992-08-20 한국과학기술연구원 주입전극법에 의한 다층세라믹 축전기의 제조방법
US5204314A (en) * 1990-07-06 1993-04-20 Advanced Technology Materials, Inc. Method for delivering an involatile reagent in vapor form to a CVD reactor
JPH0789451B2 (ja) * 1990-11-30 1995-09-27 日本電気株式会社 誘電体の成膜方法
JPH04240197A (ja) * 1991-01-23 1992-08-27 Asahi Chem Ind Co Ltd 誘電体薄膜
DE69326944T2 (de) * 1992-04-13 2000-03-30 Virginia Tech Intell Prop Stapelelektroden für ferroelektrische vorrichtungen
US5326721A (en) * 1992-05-01 1994-07-05 Texas Instruments Incorporated Method of fabricating high-dielectric constant oxides on semiconductors using a GE buffer layer
JP3102139B2 (ja) * 1992-05-28 2000-10-23 株式会社村田製作所 積層型電子部品の製造方法
US5443688A (en) * 1993-12-02 1995-08-22 Raytheon Company Method of manufacturing a ferroelectric device using a plasma etching process

Also Published As

Publication number Publication date
EP0617440A3 (de) 1995-03-22
DE69401826T2 (de) 1997-06-12
US5459635A (en) 1995-10-17
US5663089A (en) 1997-09-02
EP0617440B1 (de) 1997-03-05
EP0617440A2 (de) 1994-09-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PANASONIC CORP., KADOMA, OSAKA, JP