JPS64779A - Superconducting transistor and manufacture thereof - Google Patents
Superconducting transistor and manufacture thereofInfo
- Publication number
- JPS64779A JPS64779A JP62117101A JP11710187A JPS64779A JP S64779 A JPS64779 A JP S64779A JP 62117101 A JP62117101 A JP 62117101A JP 11710187 A JP11710187 A JP 11710187A JP S64779 A JPS64779 A JP S64779A
- Authority
- JP
- Japan
- Prior art keywords
- channel layer
- film
- gate electrode
- semiconductor
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 abstract 4
- 238000004544 sputter deposition Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000007704 transition Effects 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 239000002887 superconductor Substances 0.000 abstract 1
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Junction Field-Effect Transistors (AREA)
- Thin Film Transistor (AREA)
Abstract
PURPOSE: To obtain a superconducting transistor overcoming the limits of the high density and the high speed of a semiconductor device by a method wherein an oxide film having a channel layer in which phase transition of superconductor-semiconductor-insulator is created is employed and source and drain electrodes and a gate electrode which controls the carrier concentration in the channel layer are provided.
CONSTITUTION: A silicon oxide film 2 is formed on the surface of a p-type Si substrate 1 doped with boron. (La0.95Sr0.05)2CuO4 is applied by sputtering to form an oxide semiconductor film 3. An oxide superconducting film made of (La0.85Sr0.15)2CuO3.9 is formed by sputtering in the same way and patterned to form sorce and drain main electrodes 41 and 51. The distance between the main electrodes 4 and 5 is 0.2μm. Terminal electrodes 42 and 52 composed of Au films are formed and a gate electrode 6 composed of an Au film is formed on the rear surface of the substrate 1. In this device, the surface part of the oxide semiconductor film 3 is used as a channel layer and phase transition between a high resistance semiconductor and a superconductor is created in the channel layer by controlling the carrier concentration in the channel layer by the gate electrode 6.
COPYRIGHT: (C)1989,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62117101A JPS64779A (en) | 1987-03-13 | 1987-05-15 | Superconducting transistor and manufacture thereof |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5810287 | 1987-03-13 | ||
| JP62-58102 | 1987-03-13 | ||
| JP62117101A JPS64779A (en) | 1987-03-13 | 1987-05-15 | Superconducting transistor and manufacture thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01779A JPH01779A (en) | 1989-01-05 |
| JPS64779A true JPS64779A (en) | 1989-01-05 |
Family
ID=26399180
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62117101A Pending JPS64779A (en) | 1987-03-13 | 1987-05-15 | Superconducting transistor and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS64779A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0341783A (en) * | 1989-07-10 | 1991-02-22 | Hitachi Ltd | Field-effect superconducting transistor device |
| JPH03191581A (en) * | 1989-12-21 | 1991-08-21 | Fuji Electric Co Ltd | Superconducting transistor |
| JPH03228381A (en) * | 1990-02-02 | 1991-10-09 | Hitachi Ltd | Superconducting element |
| US5382565A (en) * | 1991-01-07 | 1995-01-17 | International Business Machines Corporation | Superconducting field-effect transistors with inverted MISFET structure |
| US5418389A (en) * | 1992-11-09 | 1995-05-23 | Mitsubishi Chemical Corporation | Field-effect transistor with perovskite oxide channel |
| US5528052A (en) * | 1992-07-20 | 1996-06-18 | International Business Machines Corporation | Superconductive-channel electric field-effect drive |
| JP2005294782A (en) * | 2004-03-31 | 2005-10-20 | Takeshi Awaji | Semiconductor superconductivity element |
| JP2007227569A (en) * | 2006-02-22 | 2007-09-06 | Nippon Telegr & Teleph Corp <Ntt> | Superconductive three-terminal element |
-
1987
- 1987-05-15 JP JP62117101A patent/JPS64779A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0341783A (en) * | 1989-07-10 | 1991-02-22 | Hitachi Ltd | Field-effect superconducting transistor device |
| JPH03191581A (en) * | 1989-12-21 | 1991-08-21 | Fuji Electric Co Ltd | Superconducting transistor |
| JPH03228381A (en) * | 1990-02-02 | 1991-10-09 | Hitachi Ltd | Superconducting element |
| US5382565A (en) * | 1991-01-07 | 1995-01-17 | International Business Machines Corporation | Superconducting field-effect transistors with inverted MISFET structure |
| US5528052A (en) * | 1992-07-20 | 1996-06-18 | International Business Machines Corporation | Superconductive-channel electric field-effect drive |
| US5418389A (en) * | 1992-11-09 | 1995-05-23 | Mitsubishi Chemical Corporation | Field-effect transistor with perovskite oxide channel |
| JP2005294782A (en) * | 2004-03-31 | 2005-10-20 | Takeshi Awaji | Semiconductor superconductivity element |
| JP2007227569A (en) * | 2006-02-22 | 2007-09-06 | Nippon Telegr & Teleph Corp <Ntt> | Superconductive three-terminal element |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5748246A (en) | Manufacture of semiconductor device | |
| JPS64779A (en) | Superconducting transistor and manufacture thereof | |
| JPS5710268A (en) | Semiconductor device | |
| CA2054644A1 (en) | Superconducting device having an extremely short superconducting channel formed of extremely thin oxide superconductor film and method for manufacturing same | |
| JPS56165359A (en) | Semiconductor device | |
| JPS5522879A (en) | Insulation gate type field effect semiconductor device | |
| JPS572519A (en) | Manufacture of semiconductor device | |
| JPS54139488A (en) | Mos semiconductor element and its manufacture | |
| JPS5567166A (en) | Preparation of mos type semiconductor device | |
| JPS5717174A (en) | Semiconductor device | |
| JPS5475273A (en) | Manufacture of semiconductor device | |
| JPS54114984A (en) | Semiconductor device | |
| JPS6468959A (en) | Semiconductor device | |
| JPS6484670A (en) | Manufacture of mosfet | |
| JPS5577174A (en) | Insulating gate-type electric field-effective semiconductor device | |
| JPS5522878A (en) | Insulation gate type field effect semiconductor device | |
| JPS5513953A (en) | Complementary integrated circuit | |
| JPS55162270A (en) | Semiconductor device | |
| JPS54120588A (en) | Gate turn-off thyristor | |
| JPS56101758A (en) | Semiconductor device | |
| JPS558015A (en) | Mos type semiconductor device manufacturing method | |
| JPS577968A (en) | Semiconductor device | |
| JPS5490981A (en) | Semiconductor device | |
| JPS6465875A (en) | Thin film transistor and manufacture thereof | |
| JPS55103761A (en) | Semiconductor device |