DE68920417D1 - Verfahren zur Herstellung eines kohlenstoffhaltigen Films. - Google Patents

Verfahren zur Herstellung eines kohlenstoffhaltigen Films.

Info

Publication number
DE68920417D1
DE68920417D1 DE68920417T DE68920417T DE68920417D1 DE 68920417 D1 DE68920417 D1 DE 68920417D1 DE 68920417 T DE68920417 T DE 68920417T DE 68920417 T DE68920417 T DE 68920417T DE 68920417 D1 DE68920417 D1 DE 68920417D1
Authority
DE
Germany
Prior art keywords
carbon
producing
containing film
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68920417T
Other languages
English (en)
Other versions
DE68920417T2 (de
Inventor
Shunpei Yamazaki
Shigenori Hayashi
Noriya Ishida
Mari Sasaki
Junichi Takeyama
Kenji Itou
Masahiro Kojima
Masaya Kadono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP63255491A external-priority patent/JP2564627B2/ja
Priority claimed from JP1082015A external-priority patent/JP3025808B2/ja
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Application granted granted Critical
Publication of DE68920417D1 publication Critical patent/DE68920417D1/de
Publication of DE68920417T2 publication Critical patent/DE68920417T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
DE68920417T 1988-10-11 1989-10-10 Verfahren zur Herstellung eines kohlenstoffhaltigen Films. Expired - Fee Related DE68920417T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63255491A JP2564627B2 (ja) 1988-10-11 1988-10-11 炭素膜で覆われた部材およびその作製方法
JP1082015A JP3025808B2 (ja) 1989-03-31 1989-03-31 薄膜作製方法

Publications (2)

Publication Number Publication Date
DE68920417D1 true DE68920417D1 (de) 1995-02-16
DE68920417T2 DE68920417T2 (de) 1995-05-11

Family

ID=26423057

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68920417T Expired - Fee Related DE68920417T2 (de) 1988-10-11 1989-10-10 Verfahren zur Herstellung eines kohlenstoffhaltigen Films.

Country Status (5)

Country Link
US (1) US5185179A (de)
EP (1) EP0372696B1 (de)
KR (1) KR940011007B1 (de)
CN (1) CN1029991C (de)
DE (1) DE68920417T2 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5041201A (en) * 1988-09-16 1991-08-20 Semiconductor Energy Laboratory Co., Ltd. Plasma processing method and apparatus
GB9019219D0 (en) * 1990-09-01 1990-10-17 Atomic Energy Authority Uk Diamond-like carbon coatings
EP0555771A3 (en) * 1992-02-12 1993-12-01 Siemens Ag Window for a device for optical reading of codes on articles
US5645900A (en) * 1993-04-22 1997-07-08 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Diamond composite films for protective coatings on metals and method of formation
US6835523B1 (en) * 1993-05-09 2004-12-28 Semiconductor Energy Laboratory Co., Ltd. Apparatus for fabricating coating and method of fabricating the coating
US5425965A (en) * 1993-12-27 1995-06-20 Ford Motor Company Process for deposition of ultra-fine grained polycrystalline diamond films
FR2715976B1 (fr) * 1994-02-09 1996-05-31 Aser Sarl Rivets-clous et procédés de mise en Óoeuvre de ceux-ci.
JP2788412B2 (ja) * 1994-08-11 1998-08-20 麒麟麦酒株式会社 炭素膜コーティングプラスチック容器の製造装置および製造方法
US5464667A (en) * 1994-08-16 1995-11-07 Minnesota Mining And Manufacturing Company Jet plasma process and apparatus
US5897924A (en) * 1995-06-26 1999-04-27 Board Of Trustees Operating Michigan State University Process for depositing adherent diamond thin films
US6161499A (en) * 1997-07-07 2000-12-19 Cvd Diamond Corporation Apparatus and method for nucleation and deposition of diamond using hot-filament DC plasma
US6203898B1 (en) * 1997-08-29 2001-03-20 3M Innovatave Properties Company Article comprising a substrate having a silicone coating
US6509124B1 (en) * 1999-11-10 2003-01-21 Shin-Etsu Chemical Co., Ltd. Method of producing diamond film for lithography
KR100436565B1 (ko) * 2001-10-31 2004-06-19 한국과학기술연구원 실리콘을 함유한 초경질 다이아몬드상 탄소박막 및 그제조방법
US7866342B2 (en) * 2002-12-18 2011-01-11 Vapor Technologies, Inc. Valve component for faucet
US6904935B2 (en) * 2002-12-18 2005-06-14 Masco Corporation Of Indiana Valve component with multiple surface layers
US8555921B2 (en) 2002-12-18 2013-10-15 Vapor Technologies Inc. Faucet component with coating
US7866343B2 (en) * 2002-12-18 2011-01-11 Masco Corporation Of Indiana Faucet
US8220489B2 (en) 2002-12-18 2012-07-17 Vapor Technologies Inc. Faucet with wear-resistant valve component
US20040265371A1 (en) 2003-06-25 2004-12-30 Looney Dwayne Lee Hemostatic devices and methods of making same
CN101556948B (zh) * 2003-08-15 2012-09-19 东京毅力科创株式会社 半导体装置、半导体装置的制造方法及等离子体cvd用气体
JP4228150B2 (ja) * 2005-03-23 2009-02-25 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
US20070026205A1 (en) * 2005-08-01 2007-02-01 Vapor Technologies Inc. Article having patterned decorative coating
RU2016122547A (ru) * 2013-11-08 2017-12-13 Нестек С.А. Контейнер с покрытием
CN107587121B (zh) * 2017-08-03 2019-08-13 深圳市科益实业有限公司 类金刚石薄膜和镜片的制备方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2459551A1 (fr) * 1979-06-19 1981-01-09 Thomson Csf Procede et structure de passivation a autoalignement sur l'emplacement d'un masque
US4300989A (en) * 1979-10-03 1981-11-17 Bell Telephone Laboratories, Incorporated Fluorine enhanced plasma growth of native layers on silicon
JPS5692447A (en) * 1979-12-26 1981-07-27 Nissan Motor Co Ltd Production of film-structure oxygen sensor element
JPS5958819A (ja) * 1982-09-29 1984-04-04 Hitachi Ltd 薄膜形成方法
SE453474B (sv) * 1984-06-27 1988-02-08 Santrade Ltd Kompoundkropp belagd med skikt av polykristallin diamant
US4663183A (en) * 1984-09-10 1987-05-05 Energy Conversion Devices, Inc. Glow discharge method of applying a carbon coating onto a substrate
US4801474A (en) * 1986-01-14 1989-01-31 Canon Kabushiki Kaisha Method for forming thin film multi-layer structure member
US4777090A (en) * 1986-11-03 1988-10-11 Ovonic Synthetic Materials Company Coated article and method of manufacturing the article
US4925701A (en) * 1988-05-27 1990-05-15 Xerox Corporation Processes for the preparation of polycrystalline diamond films

Also Published As

Publication number Publication date
KR900006474A (ko) 1990-05-08
DE68920417T2 (de) 1995-05-11
KR940011007B1 (ko) 1994-11-22
EP0372696A2 (de) 1990-06-13
US5185179A (en) 1993-02-09
CN1041790A (zh) 1990-05-02
EP0372696A3 (en) 1990-07-18
EP0372696B1 (de) 1995-01-04
CN1029991C (zh) 1995-10-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee