DE3782683D1 - Verfahren zur herstellung eines duennfilmtransistors. - Google Patents

Verfahren zur herstellung eines duennfilmtransistors.

Info

Publication number
DE3782683D1
DE3782683D1 DE8787108382T DE3782683T DE3782683D1 DE 3782683 D1 DE3782683 D1 DE 3782683D1 DE 8787108382 T DE8787108382 T DE 8787108382T DE 3782683 T DE3782683 T DE 3782683T DE 3782683 D1 DE3782683 D1 DE 3782683D1
Authority
DE
Germany
Prior art keywords
producing
thin film
film transistor
transistor
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787108382T
Other languages
English (en)
Other versions
DE3782683T2 (de
Inventor
Osamu C O Nec Corpora Sukegawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE3782683D1 publication Critical patent/DE3782683D1/de
Application granted granted Critical
Publication of DE3782683T2 publication Critical patent/DE3782683T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78663—Amorphous silicon transistors
    • H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/949—Energy beam treating radiation resist on semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
DE8787108382T 1986-06-10 1987-06-10 Verfahren zur herstellung eines duennfilmtransistors. Expired - Fee Related DE3782683T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61135296A JPS62291067A (ja) 1986-06-10 1986-06-10 薄膜トランジスタの製造方法

Publications (2)

Publication Number Publication Date
DE3782683D1 true DE3782683D1 (de) 1992-12-24
DE3782683T2 DE3782683T2 (de) 1993-04-01

Family

ID=15148383

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787108382T Expired - Fee Related DE3782683T2 (de) 1986-06-10 1987-06-10 Verfahren zur herstellung eines duennfilmtransistors.

Country Status (4)

Country Link
US (1) US4778773A (de)
EP (1) EP0249211B1 (de)
JP (1) JPS62291067A (de)
DE (1) DE3782683T2 (de)

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US5229644A (en) * 1987-09-09 1993-07-20 Casio Computer Co., Ltd. Thin film transistor having a transparent electrode and substrate
US5327001A (en) * 1987-09-09 1994-07-05 Casio Computer Co., Ltd. Thin film transistor array having single light shield layer over transistors and gate and drain lines
US5166085A (en) * 1987-09-09 1992-11-24 Casio Computer Co., Ltd. Method of manufacturing a thin film transistor
JPH0634401B2 (ja) * 1987-12-29 1994-05-02 株式会社精工舎 遮光性薄膜のエッチング方法
US4888632A (en) * 1988-01-04 1989-12-19 International Business Machines Corporation Easily manufacturable thin film transistor structures
US4960719A (en) * 1988-02-04 1990-10-02 Seikosha Co., Ltd. Method for producing amorphous silicon thin film transistor array substrate
US4907041A (en) * 1988-09-16 1990-03-06 Xerox Corporation Intra-gate offset high voltage thin film transistor with misalignment immunity
US5202572A (en) * 1988-09-21 1993-04-13 Fuji Xerox Co., Ltd. Thin film transistor
KR930007096B1 (ko) * 1988-12-08 1993-07-29 후지쓰 가부시끼가이샤 세미콘덕터-온-인슐레이터(semiconductor-on-insulator)구조와 세미콘덕터-온-인슐레이터 구조를 가지는 반도체장치의 제조방법
US5231045A (en) * 1988-12-08 1993-07-27 Fujitsu Limited Method of producing semiconductor-on-insulator structure by besol process with charged insulating layers
US5010027A (en) * 1990-03-21 1991-04-23 General Electric Company Method for fabricating a self-aligned thin-film transistor utilizing planarization and back-side photoresist exposure
JPH04505833A (ja) * 1990-10-05 1992-10-08 ゼネラル・エレクトリック・カンパニイ 基準構造の地形の伝搬地形による装置の自己アライメント
JP3255942B2 (ja) 1991-06-19 2002-02-12 株式会社半導体エネルギー研究所 逆スタガ薄膜トランジスタの作製方法
US5254480A (en) * 1992-02-20 1993-10-19 Minnesota Mining And Manufacturing Company Process for producing a large area solid state radiation detector
US6693681B1 (en) 1992-04-28 2004-02-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
JP2814161B2 (ja) * 1992-04-28 1998-10-22 株式会社半導体エネルギー研究所 アクティブマトリクス表示装置およびその駆動方法
US5828082A (en) * 1992-04-29 1998-10-27 Industrial Technology Research Institute Thin film transistor having dual insulation layer with a window above gate electrode
JP3537854B2 (ja) * 1992-12-29 2004-06-14 エルジー フィリップス エルシーディー カンパニー リミテッド 薄膜トランジスタの製造方法
JPH07506703A (ja) * 1993-03-01 1995-07-20 ゼネラル・エレクトリック・カンパニイ 持ち上げ方法を用いて構成されたセルフアライン薄膜トランジスタ
GB2285334A (en) * 1993-12-30 1995-07-05 At & T Corp Thin film transistor having increased effective channel width
KR0135391B1 (ko) * 1994-05-28 1998-04-22 김광호 자기정렬된 액정표시장치용 박막트랜지스터 및 제조방법
KR100198556B1 (ko) * 1995-11-22 1999-07-01 구자홍 박막트랜지스터의 구조 및 제조방법
US6219114B1 (en) * 1995-12-01 2001-04-17 Lg Electronics Inc. Liquid crystal display device with reduced source/drain parasitic capacitance and method of fabricating same
JPH09270519A (ja) * 1996-03-31 1997-10-14 Furontetsuku:Kk 薄膜トランジスタの製造方法
KR100232677B1 (ko) * 1996-04-09 1999-12-01 구본준 박막 트랜지스터의 제조방법 및 그 방법에 의해 제조되는 박막 트랜지스터의 구조
US6834218B2 (en) 2001-11-05 2004-12-21 Ford Global Technologies, Llc Roll over stability control for an automotive vehicle
US7233236B2 (en) 2000-09-25 2007-06-19 Ford Global Technologies, Llc Passive wheel lift identification for an automotive vehicle using operating input torque to wheel
US7109856B2 (en) 2000-09-25 2006-09-19 Ford Global Technologies, Llc Wheel lifted and grounded identification for an automotive vehicle
US6356188B1 (en) 2000-09-25 2002-03-12 Ford Global Technologies, Inc. Wheel lift identification for an automotive vehicle
US7132937B2 (en) 2000-09-25 2006-11-07 Ford Global Technologies, Llc Wheel lift identification for an automotive vehicle using passive and active detection
US6904350B2 (en) 2000-09-25 2005-06-07 Ford Global Technologies, Llc System for dynamically determining the wheel grounding and wheel lifting conditions and their applications in roll stability control
JP2002141512A (ja) * 2000-11-06 2002-05-17 Advanced Display Inc 薄膜のパターニング方法およびそれを用いたｔｆｔアレイ基板およびその製造方法
JP5187994B2 (ja) * 2001-05-10 2013-04-24 ティーピーオー ホンコン ホールディング リミテッド 薄膜トランジスタの製造方法並びにそのような製造方法を用いて製造された薄膜トランジスタ及び液晶表示パネル
US6654674B2 (en) 2001-11-21 2003-11-25 Ford Global Technologies, Llc Enhanced system for yaw stability control system to include roll stability control function
US6556908B1 (en) 2002-03-04 2003-04-29 Ford Global Technologies, Inc. Attitude sensing system for an automotive vehicle relative to the road
US7085639B2 (en) 2002-08-01 2006-08-01 Ford Global Technologies, Llc System and method for characterizing the road bank for vehicle roll stability control
US7003389B2 (en) 2002-08-01 2006-02-21 Ford Global Technologies, Llc System and method for characterizing vehicle body to road angle for vehicle roll stability control
US6941205B2 (en) 2002-08-01 2005-09-06 Ford Global Technologies, Llc. System and method for deteching roll rate sensor fault
US7079928B2 (en) 2002-08-01 2006-07-18 Ford Global Technologies, Llc System and method for determining a wheel departure angle for a rollover control system with respect to road roll rate and loading misalignment
US7194351B2 (en) 2002-08-01 2007-03-20 Ford Global Technologies, Llc System and method for determining a wheel departure angle for a rollover control system
US6961648B2 (en) 2002-08-05 2005-11-01 Ford Motor Company System and method for desensitizing the activation criteria of a rollover control system
US6963797B2 (en) 2002-08-05 2005-11-08 Ford Global Technologies, Llc System and method for determining an amount of control for operating a rollover control system
US7085642B2 (en) 2002-08-05 2006-08-01 Ford Global Technologies, Llc Method and system for correcting sensor offsets
US20040024505A1 (en) 2002-08-05 2004-02-05 Salib Albert Chenouda System and method for operating a rollover control system in a transition to a rollover condition
US7430468B2 (en) 2002-08-05 2008-09-30 Ford Global Technologies, Llc System and method for sensitizing the activation criteria of a rollover control system
US9162656B2 (en) 2003-02-26 2015-10-20 Ford Global Technologies, Llc Active driven wheel lift identification for an automotive vehicle
US7653471B2 (en) 2003-02-26 2010-01-26 Ford Global Technologies, Llc Active driven wheel lift identification for an automotive vehicle
US7136731B2 (en) 2003-06-11 2006-11-14 Ford Global Technologies, Llc System for determining vehicular relative roll angle during a potential rollover event
TWI236153B (en) * 2004-01-05 2005-07-11 Quanta Display Inc Method for fabricating self-aligned TFT
US7308350B2 (en) 2004-05-20 2007-12-11 Ford Global Technologies, Llc Method and apparatus for determining adaptive brake gain parameters for use in a safety system of an automotive vehicle
US7451032B2 (en) 2004-06-02 2008-11-11 Ford Global Technologies, Llc System and method for determining desired yaw rate and lateral velocity for use in a vehicle dynamic control system
US7640081B2 (en) 2004-10-01 2009-12-29 Ford Global Technologies, Llc Roll stability control using four-wheel drive
US7668645B2 (en) 2004-10-15 2010-02-23 Ford Global Technologies System and method for dynamically determining vehicle loading and vertical loading distance for use in a vehicle dynamic control system
US7715965B2 (en) 2004-10-15 2010-05-11 Ford Global Technologies System and method for qualitatively determining vehicle loading conditions
US7660654B2 (en) 2004-12-13 2010-02-09 Ford Global Technologies, Llc System for dynamically determining vehicle rear/trunk loading for use in a vehicle control system
CN100565888C (zh) * 2005-03-16 2009-12-02 新南创新私人有限公司 用于接通薄膜半导体结构的光刻方法
US7480547B2 (en) 2005-04-14 2009-01-20 Ford Global Technologies, Llc Attitude sensing system for an automotive vehicle relative to the road
US7590481B2 (en) 2005-09-19 2009-09-15 Ford Global Technologies, Llc Integrated vehicle control system using dynamically determined vehicle conditions
US7600826B2 (en) 2005-11-09 2009-10-13 Ford Global Technologies, Llc System for dynamically determining axle loadings of a moving vehicle using integrated sensing system and its application in vehicle dynamics controls
US8121758B2 (en) 2005-11-09 2012-02-21 Ford Global Technologies System for determining torque and tire forces using integrated sensing system
JP5527966B2 (ja) * 2007-12-28 2014-06-25 株式会社半導体エネルギー研究所 薄膜トランジスタ
US8629445B2 (en) * 2011-02-21 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and electronic appliance
KR102012854B1 (ko) * 2012-11-12 2019-10-22 엘지디스플레이 주식회사 액정표시장치용 어레이기판 및 그 제조방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0071244B1 (de) * 1981-07-27 1988-11-23 Kabushiki Kaisha Toshiba Dünnschichttransistor und Verfahren zu dessen Herstellung
JPS58170067A (ja) * 1982-03-31 1983-10-06 Fujitsu Ltd 薄膜トランジスタの製造方法
JPS59113666A (ja) * 1982-12-20 1984-06-30 Fujitsu Ltd 薄膜トランジスタの製造方法
JPS59189676A (ja) * 1983-04-12 1984-10-27 Sony Corp 半導体装置
FR2553579B1 (fr) * 1983-10-12 1985-12-27 Commissariat Energie Atomique Procede de fabrication d'un transistor en film mince a grille auto-alignee
JPH0691257B2 (ja) * 1984-04-20 1994-11-14 富士通株式会社 アモルファスシリコン薄膜トランジスタ
FR2566186B1 (fr) * 1984-06-14 1986-08-29 Thomson Csf Procede de fabrication d'au moins un transistor a effet de champ en couche mince et transistor obtenu par ce procede

Also Published As

Publication number Publication date
US4778773A (en) 1988-10-18
EP0249211A2 (de) 1987-12-16
EP0249211A3 (en) 1988-07-06
JPS62291067A (ja) 1987-12-17
EP0249211B1 (de) 1992-11-19
DE3782683T2 (de) 1993-04-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

8339 Ceased/non-payment of the annual fee