DE3752301D1 - Verfahren zur Herstellung eines Dünnschichttransistors - Google Patents
Verfahren zur Herstellung eines DünnschichttransistorsInfo
- Publication number
- DE3752301D1 DE3752301D1 DE3752301T DE3752301T DE3752301D1 DE 3752301 D1 DE3752301 D1 DE 3752301D1 DE 3752301 T DE3752301 T DE 3752301T DE 3752301 T DE3752301 T DE 3752301T DE 3752301 D1 DE3752301 D1 DE 3752301D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- thin film
- film transistor
- transistor
- thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78663—Amorphous silicon transistors
- H01L29/78666—Amorphous silicon transistors with normal-type structure, e.g. with top gate
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28495086A JPS63137479A (ja) | 1986-11-29 | 1986-11-29 | 薄膜トランジスタ |
JP29122286A JPS63142868A (ja) | 1986-12-05 | 1986-12-05 | 薄膜トランジスタ |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3752301D1 true DE3752301D1 (de) | 1999-12-09 |
DE3752301T2 DE3752301T2 (de) | 2000-03-23 |
Family
ID=26555680
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3752301T Expired - Fee Related DE3752301T2 (de) | 1986-11-29 | 1987-11-27 | Verfahren zur Herstellung eines Dünnschichttransistors |
Country Status (3)
Country | Link |
---|---|
US (1) | US4862234A (de) |
EP (1) | EP0270323B1 (de) |
DE (1) | DE3752301T2 (de) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5166086A (en) * | 1985-03-29 | 1992-11-24 | Matsushita Electric Industrial Co., Ltd. | Thin film transistor array and method of manufacturing same |
DE3680806D1 (de) * | 1985-03-29 | 1991-09-19 | Matsushita Electric Ind Co Ltd | Duennschicht-transistorenanordnung und methode zu deren herstellung. |
US4888632A (en) * | 1988-01-04 | 1989-12-19 | International Business Machines Corporation | Easily manufacturable thin film transistor structures |
US4960719A (en) * | 1988-02-04 | 1990-10-02 | Seikosha Co., Ltd. | Method for producing amorphous silicon thin film transistor array substrate |
JPH01302769A (ja) * | 1988-05-30 | 1989-12-06 | Seikosha Co Ltd | 逆スタガー型シリコン薄膜トランジスタの製造方法 |
US5122849A (en) * | 1988-07-13 | 1992-06-16 | Seikosha Co., Ltd. | Silicon thin film transistor |
GB2220792B (en) * | 1988-07-13 | 1991-12-18 | Seikosha Kk | Silicon thin film transistor and method for producing the same |
JPH0283941A (ja) * | 1988-09-21 | 1990-03-26 | Fuji Xerox Co Ltd | 薄膜トランジスタの製造方法 |
US5892244A (en) * | 1989-01-10 | 1999-04-06 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor including πconjugate polymer and liquid crystal display including the field effect transistor |
JPH0734467B2 (ja) * | 1989-11-16 | 1995-04-12 | 富士ゼロックス株式会社 | イメージセンサ製造方法 |
US5058995A (en) * | 1990-03-15 | 1991-10-22 | Thomson Consumer Electronics, Inc. | Pixel electrode structure for liquid crystal display devices |
US5010027A (en) * | 1990-03-21 | 1991-04-23 | General Electric Company | Method for fabricating a self-aligned thin-film transistor utilizing planarization and back-side photoresist exposure |
JP2938121B2 (ja) * | 1990-03-30 | 1999-08-23 | 株式会社東芝 | 薄膜半導体装置の製造方法 |
US5156986A (en) * | 1990-10-05 | 1992-10-20 | General Electric Company | Positive control of the source/drain-gate overlap in self-aligned TFTS via a top hat gate electrode configuration |
DE4192351T (de) * | 1990-10-05 | 1992-10-08 | ||
DE4192352T (de) * | 1990-10-05 | 1992-10-08 | ||
US5352907A (en) * | 1991-03-29 | 1994-10-04 | Casio Computer Co., Ltd. | Thin-film transistor |
JP3255942B2 (ja) * | 1991-06-19 | 2002-02-12 | 株式会社半導体エネルギー研究所 | 逆スタガ薄膜トランジスタの作製方法 |
EP0619601A2 (de) * | 1993-04-05 | 1994-10-12 | General Electric Company | Selbstausrichtender Dünnschicht-Transistor mittels s.g. Lift-off Technik hergestellt |
US5391507A (en) * | 1993-09-03 | 1995-02-21 | General Electric Company | Lift-off fabrication method for self-aligned thin film transistors |
US5414283A (en) * | 1993-11-19 | 1995-05-09 | Ois Optical Imaging Systems, Inc. | TFT with reduced parasitic capacitance |
US5539219A (en) * | 1995-05-19 | 1996-07-23 | Ois Optical Imaging Systems, Inc. | Thin film transistor with reduced channel length for liquid crystal displays |
US5532180A (en) * | 1995-06-02 | 1996-07-02 | Ois Optical Imaging Systems, Inc. | Method of fabricating a TFT with reduced channel length |
JP2882319B2 (ja) * | 1995-08-24 | 1999-04-12 | 日本電気株式会社 | 液晶パネル |
US5650358A (en) * | 1995-08-28 | 1997-07-22 | Ois Optical Imaging Systems, Inc. | Method of making a TFT having a reduced channel length |
US5637519A (en) * | 1996-03-21 | 1997-06-10 | Industrial Technology Research Institute | Method of fabricating a lightly doped drain thin-film transistor |
US7071037B2 (en) | 2001-03-06 | 2006-07-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
KR20080001181A (ko) * | 2006-06-29 | 2008-01-03 | 엘지.필립스 엘시디 주식회사 | 액정표시장치용 어레이 기판과 그 제조방법 |
US8278657B2 (en) | 2009-02-13 | 2012-10-02 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device |
US8247812B2 (en) * | 2009-02-13 | 2012-08-21 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device |
CN101840936B (zh) * | 2009-02-13 | 2014-10-08 | 株式会社半导体能源研究所 | 包括晶体管的半导体装置及其制造方法 |
WO2011027649A1 (en) | 2009-09-02 | 2011-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including a transistor, and manufacturing method of semiconductor device |
CN102466937B (zh) | 2010-10-29 | 2014-10-22 | 北京京东方光电科技有限公司 | Tft-lcd、驱动器件及其制造方法 |
CN105895534B (zh) | 2016-06-15 | 2018-10-19 | 武汉华星光电技术有限公司 | 薄膜晶体管的制备方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56161676A (en) * | 1980-05-16 | 1981-12-12 | Japan Electronic Ind Dev Assoc<Jeida> | Electrode structure for thin film transistor |
JPS59204274A (ja) * | 1983-05-06 | 1984-11-19 | Seiko Instr & Electronics Ltd | 薄膜トランジスタ |
JPH0693509B2 (ja) * | 1983-08-26 | 1994-11-16 | シャープ株式会社 | 薄膜トランジスタ |
FR2553579B1 (fr) * | 1983-10-12 | 1985-12-27 | Commissariat Energie Atomique | Procede de fabrication d'un transistor en film mince a grille auto-alignee |
US4752814A (en) * | 1984-03-12 | 1988-06-21 | Xerox Corporation | High voltage thin film transistor |
DE3604368A1 (de) * | 1985-02-13 | 1986-08-14 | Sharp K.K., Osaka | Verfahren zur herstellung eines duennfilm-transistors |
FR2593327B1 (fr) * | 1986-01-23 | 1988-10-28 | Commissariat Energie Atomique | Procede de fabrication d'un transistor en couches minces utilisant deux ou trois niveaux de masquage |
JPS62291067A (ja) * | 1986-06-10 | 1987-12-17 | Nec Corp | 薄膜トランジスタの製造方法 |
US4757361A (en) * | 1986-07-23 | 1988-07-12 | International Business Machines Corporation | Amorphous thin film transistor device |
-
1987
- 1987-11-27 US US07/125,961 patent/US4862234A/en not_active Expired - Lifetime
- 1987-11-27 DE DE3752301T patent/DE3752301T2/de not_active Expired - Fee Related
- 1987-11-27 EP EP87310516A patent/EP0270323B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0270323A3 (de) | 1989-12-20 |
EP0270323B1 (de) | 1999-11-03 |
US4862234A (en) | 1989-08-29 |
EP0270323A2 (de) | 1988-06-08 |
DE3752301T2 (de) | 2000-03-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |