DE3771482D1 - Verfahren zur herstellung eines duennen halbleiterfilms. - Google Patents

Verfahren zur herstellung eines duennen halbleiterfilms.

Info

Publication number
DE3771482D1
DE3771482D1 DE8787301086T DE3771482T DE3771482D1 DE 3771482 D1 DE3771482 D1 DE 3771482D1 DE 8787301086 T DE8787301086 T DE 8787301086T DE 3771482 T DE3771482 T DE 3771482T DE 3771482 D1 DE3771482 D1 DE 3771482D1
Authority
DE
Germany
Prior art keywords
producing
semiconductor film
thin semiconductor
thin
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787301086T
Other languages
English (en)
Inventor
Jean Jules Achille Robillard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOC Group Ltd
Original Assignee
BOC Group Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOC Group Ltd filed Critical BOC Group Ltd
Application granted granted Critical
Publication of DE3771482D1 publication Critical patent/DE3771482D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/08—Downward pulling
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • C23C26/02—Coating not provided for in groups C23C2/00 - C23C24/00 applying molten material to the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007—Pulling on a substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
DE8787301086T 1987-02-06 1987-02-06 Verfahren zur herstellung eines duennen halbleiterfilms. Expired - Fee Related DE3771482D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP87301086A EP0278131B1 (de) 1987-02-06 1987-02-06 Verfahren zur Herstellung eines dünnen Halbleiterfilms

Publications (1)

Publication Number Publication Date
DE3771482D1 true DE3771482D1 (de) 1991-08-22

Family

ID=8197780

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787301086T Expired - Fee Related DE3771482D1 (de) 1987-02-06 1987-02-06 Verfahren zur herstellung eines duennen halbleiterfilms.

Country Status (3)

Country Link
EP (1) EP0278131B1 (de)
DE (1) DE3771482D1 (de)
ES (1) ES2022885B3 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4217677A1 (de) * 1992-05-27 1993-12-02 Schmidt Peter Dr Rer Nat Verfahren zum Herstellen von dünnen, bandförmigen Kristallen mit ebener Oberfläche und nach diesem Verfahren gewonnenes Kristallmaterial
DE10336110B4 (de) * 2003-08-06 2008-01-03 Proteros Biostructures Gmbh Vorrichtung und Verfahren zum Behandeln eines Proteinkristalls
WO2005017533A1 (de) * 2003-08-06 2005-02-24 Proteros Biostructures Gmbh Verfahren zur identifizierung von schwach bindenden molekülfragmenten mit ligandeneigenschaften, wobei die molekülfragmente als mikrotropfen einer entsprechenden lösung auf den kristall aufgebracht werden

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4264641A (en) * 1977-03-17 1981-04-28 Phrasor Technology Inc. Electrohydrodynamic spraying to produce ultrafine particles
FR2401696A1 (fr) * 1977-08-31 1979-03-30 Ugine Kuhlmann Methode de depot de silicium cristallin en films minces sur substrats graphites
US4365005A (en) * 1978-10-13 1982-12-21 Massachusetts Institute Of Technology Method of forming a laminated ribbon structure and a ribbon structure formed thereby
GB2057300B (en) * 1979-08-23 1982-11-17 Atomic Energy Authority Uk Sources for spraying liquid metals
DE3226931A1 (de) * 1982-07-19 1984-01-19 Siemens AG, 1000 Berlin und 8000 München Verfahren und vorrichtung zum herstellen von grossflaechigen, fuer die fertigung von solarzellen verwendbaren bandfoermigen siliziumkoerpern

Also Published As

Publication number Publication date
EP0278131B1 (de) 1991-07-17
ES2022885B3 (es) 1991-12-16
EP0278131A1 (de) 1988-08-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee