DE68907209T2 - Verfahren zur herstellung eines supraleitfähigen dünnfilmes. - Google Patents

Verfahren zur herstellung eines supraleitfähigen dünnfilmes.

Info

Publication number
DE68907209T2
DE68907209T2 DE89910178T DE68907209T DE68907209T2 DE 68907209 T2 DE68907209 T2 DE 68907209T2 DE 89910178 T DE89910178 T DE 89910178T DE 68907209 T DE68907209 T DE 68907209T DE 68907209 T2 DE68907209 T2 DE 68907209T2
Authority
DE
Germany
Prior art keywords
supral
producing
thin film
conductive thin
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE89910178T
Other languages
English (en)
Other versions
DE68907209D1 (de
Inventor
Hitoshi Abe
Tomohiro Nakamori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Publication of DE68907209D1 publication Critical patent/DE68907209D1/de
Application granted granted Critical
Publication of DE68907209T2 publication Critical patent/DE68907209T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C23C16/0281—Deposition of sub-layers, e.g. to promote the adhesion of the main coating of metallic sub-layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/408—Oxides of copper or solid solutions thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0436—Processes for depositing or forming copper oxide superconductor layers by chemical vapour deposition [CVD]
    • H10N60/0464—Processes for depositing or forming copper oxide superconductor layers by chemical vapour deposition [CVD] by metalloorganic chemical vapour deposition [MOCVD]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/734—From organometallic precursors, e.g. acetylacetonates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
DE89910178T 1988-09-28 1989-09-14 Verfahren zur herstellung eines supraleitfähigen dünnfilmes. Expired - Fee Related DE68907209T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24269688 1988-09-28

Publications (2)

Publication Number Publication Date
DE68907209D1 DE68907209D1 (de) 1993-07-22
DE68907209T2 true DE68907209T2 (de) 1994-02-03

Family

ID=17092883

Family Applications (1)

Application Number Title Priority Date Filing Date
DE89910178T Expired - Fee Related DE68907209T2 (de) 1988-09-28 1989-09-14 Verfahren zur herstellung eines supraleitfähigen dünnfilmes.

Country Status (4)

Country Link
US (1) US5116811A (de)
EP (1) EP0408753B1 (de)
DE (1) DE68907209T2 (de)
WO (1) WO1990003453A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5260267A (en) * 1989-07-24 1993-11-09 Sumitomo Electric Industries, Ltd. Method for forming a Bi-containing superconducting oxide film on a substrate with a buffer layer of Bi2 O3
JPH04295089A (ja) * 1991-03-26 1992-10-20 Kokusai Chodendo Sangyo Gijutsu Kenkyu Center 酸化物超電導膜製造装置
JP3144104B2 (ja) * 1992-11-17 2001-03-12 住友電気工業株式会社 高品質な酸化物超電導薄膜の作製方法
KR970006723B1 (ko) * 1993-09-07 1997-04-29 한국과학기술원 입자 크기가 큰 다결정 규소 박막의 제조방법
JP2907111B2 (ja) * 1996-04-22 1999-06-21 日本電気株式会社 気相成長方法及びその装置
US6986705B2 (en) * 2004-04-05 2006-01-17 Rimpad Tech Ltd. Polishing pad and method of making same
US7615385B2 (en) 2006-09-20 2009-11-10 Hypres, Inc Double-masking technique for increasing fabrication yield in superconducting electronics
CN104513970B (zh) * 2014-12-25 2017-02-22 贵州大学 一种制备硼化镁超导薄膜的方法
US11495724B2 (en) 2020-07-21 2022-11-08 International Business Machines Corporation Superconducting structure and device surface termination with alloy
CN115233302A (zh) * 2022-06-14 2022-10-25 沈阳大学 一种半金属Bi超薄薄膜表面具有透明导电性和疏水性的制备方法
CN115787094A (zh) * 2022-08-10 2023-03-14 哈尔滨工业大学 一种辅助生长硒氧化铋薄膜的方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59139688A (ja) * 1983-01-31 1984-08-10 Nippon Telegr & Teleph Corp <Ntt> 酸化物薄膜の熱処理方法
JPS6424319A (en) * 1987-07-21 1989-01-26 Oki Electric Ind Co Ltd Formation of superconductor thin film
JPH01208327A (ja) * 1988-02-15 1989-08-22 Matsushita Electric Ind Co Ltd 薄膜超電導体の製造方法

Also Published As

Publication number Publication date
EP0408753A4 (en) 1991-08-28
DE68907209D1 (de) 1993-07-22
US5116811A (en) 1992-05-26
EP0408753B1 (de) 1993-06-16
WO1990003453A1 (en) 1990-04-05
EP0408753A1 (de) 1991-01-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee