DE3787038D1 - Verfahren zur ausbildung eines abgeschiedenen films. - Google Patents

Verfahren zur ausbildung eines abgeschiedenen films.

Info

Publication number
DE3787038D1
DE3787038D1 DE8787302793T DE3787038T DE3787038D1 DE 3787038 D1 DE3787038 D1 DE 3787038D1 DE 8787302793 T DE8787302793 T DE 8787302793T DE 3787038 T DE3787038 T DE 3787038T DE 3787038 D1 DE3787038 D1 DE 3787038D1
Authority
DE
Germany
Prior art keywords
training
deposited film
deposited
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8787302793T
Other languages
English (en)
Other versions
DE3787038T2 (de
Inventor
Jinso Matsuyam
Yutaka Hirai
Masao Ueki
Akira Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE3787038D1 publication Critical patent/DE3787038D1/de
Publication of DE3787038T2 publication Critical patent/DE3787038T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Light Receiving Elements (AREA)
DE87302793T 1986-03-31 1987-03-31 Verfahren zur Ausbildung eines abgeschiedenen Films. Expired - Lifetime DE3787038T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61073092A JPS62228471A (ja) 1986-03-31 1986-03-31 堆積膜形成法

Publications (2)

Publication Number Publication Date
DE3787038D1 true DE3787038D1 (de) 1993-09-23
DE3787038T2 DE3787038T2 (de) 1993-12-16

Family

ID=13508346

Family Applications (1)

Application Number Title Priority Date Filing Date
DE87302793T Expired - Lifetime DE3787038T2 (de) 1986-03-31 1987-03-31 Verfahren zur Ausbildung eines abgeschiedenen Films.

Country Status (4)

Country Link
US (1) US4873125A (de)
EP (1) EP0240314B1 (de)
JP (1) JPS62228471A (de)
DE (1) DE3787038T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4877650A (en) * 1986-03-31 1989-10-31 Canon Kabushiki Kaisha Method for forming deposited film
EP0241317B1 (de) * 1986-04-11 1993-03-10 Canon Kabushiki Kaisha Herstellungsverfahren einer niedergeschlagenen Schicht
JP3073327B2 (ja) * 1992-06-30 2000-08-07 キヤノン株式会社 堆積膜形成方法
US5946587A (en) * 1992-08-06 1999-08-31 Canon Kabushiki Kaisha Continuous forming method for functional deposited films
JP3529989B2 (ja) * 1997-09-12 2004-05-24 株式会社東芝 成膜方法及び半導体装置の製造方法
KR101028416B1 (ko) * 2007-08-20 2011-04-13 재단법인서울대학교산학협력재단 박막 제조 방법 및 박막 제조 장치

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4217374A (en) * 1978-03-08 1980-08-12 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors
US4226898A (en) * 1978-03-16 1980-10-07 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process
US4522663A (en) * 1980-09-09 1985-06-11 Sovonics Solar Systems Method for optimizing photoresponsive amorphous alloys and devices
US4504518A (en) * 1982-09-24 1985-03-12 Energy Conversion Devices, Inc. Method of making amorphous semiconductor alloys and devices using microwave energy
JPS59200248A (ja) * 1983-04-28 1984-11-13 Canon Inc 像形成部材の製造法
DE3429899A1 (de) * 1983-08-16 1985-03-07 Canon K.K., Tokio/Tokyo Verfahren zur bildung eines abscheidungsfilms
FR2555206B1 (fr) * 1983-11-22 1986-05-09 Thomson Csf Procede de depot de silicium amorphe par decomposition thermique a basse temperature et dispositif de mise en oeuvre du procede
JPS60200523A (ja) * 1984-03-26 1985-10-11 Agency Of Ind Science & Technol シリコン薄膜の製造法
JPH0719749B2 (ja) * 1984-05-15 1995-03-06 キヤノン株式会社 堆積膜の形成方法
JPH0766909B2 (ja) * 1984-07-26 1995-07-19 新技術事業団 元素半導体単結晶薄膜の成長法
US4657777A (en) * 1984-12-17 1987-04-14 Canon Kabushiki Kaisha Formation of deposited film
GB8611454D0 (en) * 1986-05-10 1986-06-18 Autotype Int Ltd Manufacture of polymeric materials
AU7077087A (en) * 1986-03-31 1987-10-08 Canon Kabushiki Kaisha Forming a deposited film

Also Published As

Publication number Publication date
EP0240314B1 (de) 1993-08-18
US4873125A (en) 1989-10-10
EP0240314A1 (de) 1987-10-07
DE3787038T2 (de) 1993-12-16
JPS62228471A (ja) 1987-10-07

Similar Documents

Publication Publication Date Title
DE3782683D1 (de) Verfahren zur herstellung eines duennfilmtransistors.
DE3881077D1 (de) Verfahren zur herstellung eines diamantfilms.
DE3775076D1 (de) Verfahren zur herstellung eines kohlenstoffilmes.
DE3677951D1 (de) Verfahren zur herstellung eines vielschichtigen strukturierten films.
DE3776240D1 (de) Verfahren zur herstellung eines ferritfilmes.
DE69018717D1 (de) Verfahren zur Herstellung eines Polyimidfilms.
DE68920417D1 (de) Verfahren zur Herstellung eines kohlenstoffhaltigen Films.
DE3682493D1 (de) Verfahren zur herstellung eines sputter-targets.
DE3868128D1 (de) Verfahren zur herstellung eines supraleitenden gegenstandes.
DE3683067D1 (de) Verfahren zur herstellung eines laminats.
AT389273B (de) Verfahren zur herstellung eines behaelters
DE69204538D1 (de) Verfahren zur Herstellung eines Beschichtungsfilms.
DE3574740D1 (de) Verfahren zur herstellung eines keramischen films.
DE3785683D1 (de) Verfahren zum herstellen eines polymerfilms.
DE69110286D1 (de) Verfahren zur herstellung eines überzuges.
DE69013948D1 (de) Verfahren zur Herstellung eines dünnen Filmes.
DE3882881D1 (de) Verfahren zur herstellung eines polyacetylen- oder polydiacetylenfilms.
DE68907209D1 (de) Verfahren zur herstellung eines supraleitfaehigen duennfilmes.
DE3864056D1 (de) Verfahren zur herstellung eines supraleitenden duennen films und vorrichtung hierfuer.
DE3680887D1 (de) Verfahren zur herstellung eines farbbildes.
DE3787556D1 (de) Verfahren zur bildung eines abgeschiedenen filmes.
DE3787038D1 (de) Verfahren zur ausbildung eines abgeschiedenen films.
DE69114395D1 (de) Verfahren zur Herstellung eines Verbundfilms.
DE3687954D1 (de) Verfahren zur herstellung eines tetraalkoxysilans.
DE3579601D1 (de) Verfahren zur herstellung eines duennfilmmessstreifensystems.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition