JPS6424319A - Formation of superconductor thin film - Google Patents
Formation of superconductor thin filmInfo
- Publication number
- JPS6424319A JPS6424319A JP62181655A JP18165587A JPS6424319A JP S6424319 A JPS6424319 A JP S6424319A JP 62181655 A JP62181655 A JP 62181655A JP 18165587 A JP18165587 A JP 18165587A JP S6424319 A JPS6424319 A JP S6424319A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- superconductor thin
- gas
- formation
- cvd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
PURPOSE:To form a ceramic superconductor thin film with excellent quality by forming an oxide superconductor thin film by the CVD method. CONSTITUTION:An oxide superconductor thin film is formed by the CVD (chemical vapor phase deposition) method. A compound containing the component element of a superconductor is formed into gas, this gas (raw material gas) is fed to a deposition tank with the carrier gas, for example, and a thin film is deposited on the substrate in the deposition tank. The surface of an insulating layer constituting the weak junction section of a Josephson element is thereby damaged very rarely, and a junction face with little damage can be formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62181655A JPS6424319A (en) | 1987-07-21 | 1987-07-21 | Formation of superconductor thin film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62181655A JPS6424319A (en) | 1987-07-21 | 1987-07-21 | Formation of superconductor thin film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6424319A true JPS6424319A (en) | 1989-01-26 |
Family
ID=16104545
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62181655A Pending JPS6424319A (en) | 1987-07-21 | 1987-07-21 | Formation of superconductor thin film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6424319A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1990003453A1 (en) * | 1988-09-28 | 1990-04-05 | Oki Electric Industry Co., Ltd. | Process for forming superconducting thin film |
JPH04119923A (en) * | 1990-09-10 | 1992-04-21 | Kokusai Chodendo Sangyo Gijutsu Kenkyu Center | Bi-sr-ca-cu-o superconducting ultrathin film and its production |
-
1987
- 1987-07-21 JP JP62181655A patent/JPS6424319A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1990003453A1 (en) * | 1988-09-28 | 1990-04-05 | Oki Electric Industry Co., Ltd. | Process for forming superconducting thin film |
EP0408753A1 (en) * | 1988-09-28 | 1991-01-23 | Oki Electric Industry Company, Limited | Process for forming superconducting thin film |
EP0408753B1 (en) * | 1988-09-28 | 1993-06-16 | Oki Electric Industry Company, Limited | Process for forming superconducting thin film |
JPH04119923A (en) * | 1990-09-10 | 1992-04-21 | Kokusai Chodendo Sangyo Gijutsu Kenkyu Center | Bi-sr-ca-cu-o superconducting ultrathin film and its production |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW325601B (en) | Process of manufacturing thin film semiconductor | |
GB1131153A (en) | Multilayer semiconductor structure | |
DE3274470D1 (en) | Multiple chamber deposition and isolation system and method | |
GB1379414A (en) | Forming an epitaxial layer on a semiconductor substrate | |
EP0250603A4 (en) | Process for forming thin film of compound semiconductor. | |
EP0328333A3 (en) | Process for producing ceramic superconductors | |
EP0310043A3 (en) | Oxidation resistant, high temperature thermal cycling resistant coating on silicon-based substrates and process for the production thereof | |
JPS6424319A (en) | Formation of superconductor thin film | |
JPS57167655A (en) | Manufacture of insulating isolation substrate | |
CA2064169A1 (en) | Method of Forming Compound Oxide Superconducting Thin Film | |
EP0193298A3 (en) | Method for the formation of epitaxial layers for integrated circuits | |
JPS54157779A (en) | Production of silicon single crystal | |
CA2022359A1 (en) | Process for Preparing Superconducting Thin Films | |
GB1409340A (en) | Superconducting niobium-gallium alloy | |
CA2045890A1 (en) | Process for Preparing Thin Film of Oxide Superconductor | |
JPS6463215A (en) | High temperature superconductive material | |
JPS55149195A (en) | Manufacture of silicon carbide substrate | |
JPS55100299A (en) | Production of silicon carbide crystal layer | |
FR2443137A1 (en) | Mfr. technique for epitaxial layers of semiconductor material - includes using homogenising chamber for carrier gas and deposited material to improve uniformity of deposition | |
JPS6463214A (en) | High temperature superconductive material | |
JPS642218A (en) | Manufacture of thin film superconductor | |
JPS6438916A (en) | Oxide superconductor | |
Kashiwagi et al. | Effects of ionized particles on the growth processes of films formed by ion plating | |
JPS5526681A (en) | Semiconductor device and its manufacturing method | |
JPS6452324A (en) | Superconductor |