FR2401696A1 - Methode de depot de silicium cristallin en films minces sur substrats graphites - Google Patents

Methode de depot de silicium cristallin en films minces sur substrats graphites

Info

Publication number
FR2401696A1
FR2401696A1 FR7726402A FR7726402A FR2401696A1 FR 2401696 A1 FR2401696 A1 FR 2401696A1 FR 7726402 A FR7726402 A FR 7726402A FR 7726402 A FR7726402 A FR 7726402A FR 2401696 A1 FR2401696 A1 FR 2401696A1
Authority
FR
France
Prior art keywords
crystalline silicon
substrate
thin films
bringing
graphitized
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7726402A
Other languages
English (en)
Other versions
FR2401696B1 (fr
Inventor
Jean Ricard
Charles Excoffon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Produits Chimiques Ugine Kuhlmann
Ugine Kuhlmann SA
Original Assignee
Produits Chimiques Ugine Kuhlmann
Ugine Kuhlmann SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Produits Chimiques Ugine Kuhlmann, Ugine Kuhlmann SA filed Critical Produits Chimiques Ugine Kuhlmann
Priority to FR7726402A priority Critical patent/FR2401696A1/fr
Priority to US05/926,879 priority patent/US4233338A/en
Priority to IT68866/78A priority patent/IT1160579B/it
Priority to DE2837775A priority patent/DE2837775C2/de
Priority to JP10568278A priority patent/JPS5460291A/ja
Priority to GB7835225A priority patent/GB2003400B/en
Priority to CH917678A priority patent/CH626746A5/fr
Publication of FR2401696A1 publication Critical patent/FR2401696A1/fr
Application granted granted Critical
Publication of FR2401696B1 publication Critical patent/FR2401696B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007—Pulling on a substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/06—Non-vertical pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/914—Crystallization on a continuous moving substrate or cooling surface, e.g. wheel, cylinder, belt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/925—Fluid growth doping control, e.g. delta doping

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Photovoltaic Devices (AREA)
  • Ceramic Products (AREA)

Abstract

Procédé de dépôt en continu de silicium cristallin, dopé N ou P ou non, en film mince sur un substrat graphité consistant à : a. placer la matière de silicium cristallin dans un creuset comportant à sa partie inférieure un orifice capillaire d'axe vertical; b. porter la matière à une température supérieur à son point de fusion; c. amener le substrat préchauffé au contact de la goutte pendante formée à la partie inférieure de l'orifice capillaire, d. déplacer le substrat à vitesse convenable dans une direction constante déterminée ; e. enlever à intervalles de temps choisis le substrat revêtu du corps cristallin. Les dépôts de silicium cristallin sur des substrats graphités obtenus selon l'invention constituent le principal constituant des cellules photovoltaïques.
FR7726402A 1977-08-31 1977-08-31 Methode de depot de silicium cristallin en films minces sur substrats graphites Granted FR2401696A1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR7726402A FR2401696A1 (fr) 1977-08-31 1977-08-31 Methode de depot de silicium cristallin en films minces sur substrats graphites
US05/926,879 US4233338A (en) 1977-08-31 1978-07-24 Processes for deposition of thin films of crystalline silicon on graphite
IT68866/78A IT1160579B (it) 1977-08-31 1978-08-07 Procedimento per il deposito del silicio cristallino in pellicola sottile su un substrato grafitato
DE2837775A DE2837775C2 (de) 1977-08-31 1978-08-30 Verfahren zur Herstellung von kristallinem Silicium
JP10568278A JPS5460291A (en) 1977-08-31 1978-08-31 Process for depositing thin film of crystalline silicon on graphite basee material
GB7835225A GB2003400B (en) 1977-08-31 1978-08-31 Process for deposition of thin films of crystalline silicon on graphite
CH917678A CH626746A5 (fr) 1977-08-31 1978-08-31

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7726402A FR2401696A1 (fr) 1977-08-31 1977-08-31 Methode de depot de silicium cristallin en films minces sur substrats graphites

Publications (2)

Publication Number Publication Date
FR2401696A1 true FR2401696A1 (fr) 1979-03-30
FR2401696B1 FR2401696B1 (fr) 1980-02-01

Family

ID=9194902

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7726402A Granted FR2401696A1 (fr) 1977-08-31 1977-08-31 Methode de depot de silicium cristallin en films minces sur substrats graphites

Country Status (7)

Country Link
US (1) US4233338A (fr)
JP (1) JPS5460291A (fr)
CH (1) CH626746A5 (fr)
DE (1) DE2837775C2 (fr)
FR (1) FR2401696A1 (fr)
GB (1) GB2003400B (fr)
IT (1) IT1160579B (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3231326A1 (de) * 1982-08-23 1984-02-23 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum herstellen von grossflaechigen, bandfoermigen siliziumkoerpern fuer solarzellen
DE3306135A1 (de) * 1983-02-22 1984-08-23 Siemens AG, 1000 Berlin und 8000 München Verfahren und vorrichtung zum herstellen von polykirstallinen, grossflaechigen siliziumkristallkoerpern fuer solarzellen
US4495155A (en) * 1982-06-11 1985-01-22 Circeram Modified crucible for the pendant drop method of crystallization

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4525223A (en) * 1978-09-19 1985-06-25 Noboru Tsuya Method of manufacturing a thin ribbon wafer of semiconductor material
GB2059292A (en) * 1979-09-28 1981-04-23 Honeywell Inc Growing silicon films on substrates
US4323419A (en) * 1980-05-08 1982-04-06 Atlantic Richfield Company Method for ribbon solar cell fabrication
DE3019653A1 (de) * 1980-05-22 1981-11-26 SIEMENS AG AAAAA, 1000 Berlin und 8000 München Verbesserung eines verfahres zur herstellung von platten-, band- oder folienfoermigen siliziumkristallkoerpern fuer solarzellen
DE3132776A1 (de) * 1981-08-19 1983-03-03 Heliotronic Gmbh Verfahren zur herstellung grob- bis einkristalliner folien aus halbleitermaterial
FR2529189B1 (fr) * 1982-06-25 1985-08-09 Comp Generale Electricite Procede de fabrication d'une bande de silicium polycristallin pour photophiles
US4584181A (en) * 1982-12-27 1986-04-22 Sri International Process and apparatus for obtaining silicon from fluosilicic acid
US4781565A (en) * 1982-12-27 1988-11-01 Sri International Apparatus for obtaining silicon from fluosilicic acid
US4748014A (en) * 1982-12-27 1988-05-31 Sri International Process and apparatus for obtaining silicon from fluosilicic acid
DE3404818A1 (de) * 1984-02-10 1985-08-14 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum erzeugen eines pn- ueberganges in einem nach dem durchlaufverfahren hergestellten siliziumband
DE3419137A1 (de) * 1984-05-23 1985-11-28 Bayer Ag, 5090 Leverkusen Verfahren und vorrichtung zur herstellung von halbleiterfolien
EP0278131B1 (fr) * 1987-02-06 1991-07-17 The BOC Group plc Procédé pour fabriquer une couche mince semi-conductrice
WO1988005835A1 (fr) * 1987-02-06 1988-08-11 The Boc Group Plc Procede de preparation d'une pellicule semi-conductrice mince
US5075257A (en) * 1990-11-09 1991-12-24 The Board Of Trustees Of The University Of Arkansas Aerosol deposition and film formation of silicon
US5688324A (en) * 1994-07-15 1997-11-18 Dainippon Screen Mfg. Co., Ltd. Apparatus for coating substrate
JP3875314B2 (ja) * 1996-07-29 2007-01-31 日本碍子株式会社 シリコン結晶プレートの育成方法、シリコン結晶プレートの育成装置、シリコン結晶プレートおよび太陽電池素子の製造方法
US7344594B2 (en) * 2004-06-18 2008-03-18 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
US7691199B2 (en) * 2004-06-18 2010-04-06 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
US7465351B2 (en) * 2004-06-18 2008-12-16 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
US20110303290A1 (en) * 2010-06-14 2011-12-15 Korea Institute Of Energy Research Method and apparatus for manufacturing silicon substrate with excellent surface quality using inert gas blowing
WO2014117840A1 (fr) * 2013-01-31 2014-08-07 European Space Agency Procédé et système de production d'un composant d'alliage allongé présentant une variation de composition longitudinale contrôlée, et composant d'alliage allongé correspondant

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL270516A (fr) * 1960-11-30
NL7004876A (fr) * 1970-04-04 1971-10-06
IT1055104B (it) * 1975-02-07 1981-12-21 Philips Nv Metodo di fabbricazione di dispositivi semiconduttori comportante la formazione di uno strato di materiale semiconduuttore su di un substrato apparato per l'attuazione di tale metodo e dispositivo semiconduttore fabbricato con l'ausilio di detto metodo
US4119744A (en) * 1975-02-07 1978-10-10 U.S. Philips Corporation Method of manufacturing semiconductor devices in which a layer of semiconductor material is provided on a substrate
US3961997A (en) * 1975-05-12 1976-06-08 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Fabrication of polycrystalline solar cells on low-cost substrates
FR2321326A1 (fr) * 1975-08-08 1977-03-18 Ugine Kuhlmann Procede de fabrication en continu de monocristaux preformes
US4124411A (en) * 1976-09-02 1978-11-07 U.S. Philips Corporation Method of providing a layer of solid material on a substrate in which liquid from which the solid material can be formed, is spread over the substrate surface
US4090851A (en) * 1976-10-15 1978-05-23 Rca Corporation Si3 N4 Coated crucible and die means for growing single crystalline silicon sheets
US4099924A (en) * 1977-03-16 1978-07-11 Rca Corporation Apparatus improvements for growing single crystalline silicon sheets

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4495155A (en) * 1982-06-11 1985-01-22 Circeram Modified crucible for the pendant drop method of crystallization
DE3231326A1 (de) * 1982-08-23 1984-02-23 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum herstellen von grossflaechigen, bandfoermigen siliziumkoerpern fuer solarzellen
DE3306135A1 (de) * 1983-02-22 1984-08-23 Siemens AG, 1000 Berlin und 8000 München Verfahren und vorrichtung zum herstellen von polykirstallinen, grossflaechigen siliziumkristallkoerpern fuer solarzellen

Also Published As

Publication number Publication date
GB2003400B (en) 1982-03-03
DE2837775C2 (de) 1984-03-15
IT1160579B (it) 1987-03-11
DE2837775A1 (de) 1979-03-08
US4233338A (en) 1980-11-11
FR2401696B1 (fr) 1980-02-01
IT7868866A0 (it) 1978-08-07
GB2003400A (en) 1979-03-14
CH626746A5 (fr) 1981-11-30
JPS5460291A (en) 1979-05-15

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