FR2529189B1 - Procede de fabrication d'une bande de silicium polycristallin pour photophiles - Google Patents

Procede de fabrication d'une bande de silicium polycristallin pour photophiles

Info

Publication number
FR2529189B1
FR2529189B1 FR8211171A FR8211171A FR2529189B1 FR 2529189 B1 FR2529189 B1 FR 2529189B1 FR 8211171 A FR8211171 A FR 8211171A FR 8211171 A FR8211171 A FR 8211171A FR 2529189 B1 FR2529189 B1 FR 2529189B1
Authority
FR
France
Prior art keywords
photophiles
producing
polycrystalline silicon
silicon strip
strip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8211171A
Other languages
English (en)
Other versions
FR2529189A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel Lucent SAS
Original Assignee
Compagnie Generale dElectricite SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Compagnie Generale dElectricite SA filed Critical Compagnie Generale dElectricite SA
Priority to FR8211171A priority Critical patent/FR2529189B1/fr
Priority to DE19833322685 priority patent/DE3322685A1/de
Priority to JP58114140A priority patent/JPS598612A/ja
Priority to US06/507,651 priority patent/US4478880A/en
Publication of FR2529189A1 publication Critical patent/FR2529189A1/fr
Application granted granted Critical
Publication of FR2529189B1 publication Critical patent/FR2529189B1/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007—Pulling on a substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/914—Crystallization on a continuous moving substrate or cooling surface, e.g. wheel, cylinder, belt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/915—Separating from substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Photovoltaic Devices (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR8211171A 1982-06-25 1982-06-25 Procede de fabrication d'une bande de silicium polycristallin pour photophiles Expired FR2529189B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR8211171A FR2529189B1 (fr) 1982-06-25 1982-06-25 Procede de fabrication d'une bande de silicium polycristallin pour photophiles
DE19833322685 DE3322685A1 (de) 1982-06-25 1983-06-23 Verfahren zur herstellung eines bandes aus polykristallinem silizium
JP58114140A JPS598612A (ja) 1982-06-25 1983-06-24 多結晶質シリコン・ストリツプの製法
US06/507,651 US4478880A (en) 1982-06-25 1983-06-27 Method of fabricating polycrystalline silicon strips

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8211171A FR2529189B1 (fr) 1982-06-25 1982-06-25 Procede de fabrication d'une bande de silicium polycristallin pour photophiles

Publications (2)

Publication Number Publication Date
FR2529189A1 FR2529189A1 (fr) 1983-12-30
FR2529189B1 true FR2529189B1 (fr) 1985-08-09

Family

ID=9275405

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8211171A Expired FR2529189B1 (fr) 1982-06-25 1982-06-25 Procede de fabrication d'une bande de silicium polycristallin pour photophiles

Country Status (4)

Country Link
US (1) US4478880A (fr)
JP (1) JPS598612A (fr)
DE (1) DE3322685A1 (fr)
FR (1) FR2529189B1 (fr)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3306515A1 (de) * 1983-02-24 1984-08-30 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum herstellen von grossflaechigen, bandfoermigen siliziumkoerpern fuer solarzellen
DE3560643D1 (en) * 1984-04-09 1987-10-22 Siemens Ag Process for producing large-surface silicon crystal bodies for solar cells
DE3727826A1 (de) * 1987-08-20 1989-03-02 Siemens Ag Serienverschaltetes duennschicht-solarmodul aus kristallinem silizium
DE3727823A1 (de) * 1987-08-20 1989-03-02 Siemens Ag Tandem-solarmodul
DE3727825A1 (de) * 1987-08-20 1989-03-02 Siemens Ag Serienverschaltetes duennschichtsolarmodul aus kristallinem silizium
DE3736339A1 (de) * 1987-10-27 1989-05-11 Siemens Ag Anordnung zum kontinuierlichen aufschmelzen von siliziumgranulat fuer das bandziehverfahren
JPH0244021A (ja) * 1988-07-07 1990-02-14 Hoxan Corp 多結晶シリコンシートの製造方法
US5273911A (en) * 1991-03-07 1993-12-28 Mitsubishi Denki Kabushiki Kaisha Method of producing a thin-film solar cell
US5563095A (en) * 1994-12-01 1996-10-08 Frey; Jeffrey Method for manufacturing semiconductor devices
US5556791A (en) * 1995-01-03 1996-09-17 Texas Instruments Incorporated Method of making optically fused semiconductor powder for solar cells
US5993540A (en) * 1995-06-16 1999-11-30 Optoscint, Inc. Continuous crystal plate growth process and apparatus
US6800137B2 (en) 1995-06-16 2004-10-05 Phoenix Scientific Corporation Binary and ternary crystal purification and growth method and apparatus
WO1997049132A1 (fr) * 1996-06-20 1997-12-24 Jeffrey Frey Dispositif semi-conducteur electroluminescent
US6402840B1 (en) 1999-08-10 2002-06-11 Optoscint, Inc. Crystal growth employing embedded purification chamber
FR2879821B1 (fr) * 2004-12-21 2007-06-08 Solaforce Soc Par Actions Simp Procede de fabrication de cellules photovoltaiques

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2253410C3 (de) * 1972-10-31 1979-05-03 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung von Rohren für Diffusionsprozesse in der Halbleitertechnik
DE2638270C2 (de) * 1976-08-25 1983-01-27 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung großflächiger, freitragender Platten aus Silicium
FR2386359A1 (fr) * 1977-04-07 1978-11-03 Labo Electronique Physique Procede de depot par immersion en continu, dispositif et produits obtenus
FR2401696A1 (fr) * 1977-08-31 1979-03-30 Ugine Kuhlmann Methode de depot de silicium cristallin en films minces sur substrats graphites
US4250148A (en) * 1978-07-18 1981-02-10 Motorola, Inc. Apparatus and method for producing polycrystalline ribbon
DE2850805C2 (de) * 1978-11-23 1986-08-28 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von scheiben- oder bandförmigen Siliziumkristallen mit Kolumnarstruktur für Solarzellen
US4238436A (en) * 1979-05-10 1980-12-09 General Instrument Corporation Method of obtaining polycrystalline silicon
US4252861A (en) * 1979-09-28 1981-02-24 Honeywell Inc. Growth technique for silicon-on-ceramic
US4323419A (en) * 1980-05-08 1982-04-06 Atlantic Richfield Company Method for ribbon solar cell fabrication
DE3019635A1 (de) * 1980-05-22 1981-11-26 SIEMENS AG AAAAA, 1000 Berlin und 8000 München Verbesserung eines verfahrens zur herstellung von platten-, band- oder folienfoermigen siliziumkristallkoerpern fuer solarzellen
DE3019653A1 (de) * 1980-05-22 1981-11-26 SIEMENS AG AAAAA, 1000 Berlin und 8000 München Verbesserung eines verfahres zur herstellung von platten-, band- oder folienfoermigen siliziumkristallkoerpern fuer solarzellen
US4370288A (en) * 1980-11-18 1983-01-25 Motorola, Inc. Process for forming self-supporting semiconductor film

Also Published As

Publication number Publication date
US4478880A (en) 1984-10-23
DE3322685A1 (de) 1983-12-29
FR2529189A1 (fr) 1983-12-30
JPS598612A (ja) 1984-01-17

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Legal Events

Date Code Title Description
ST Notification of lapse